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Sensors & Transducers

Volume 89 www.sensorsportal.com ISSN 1726-5479


Issue 3
March 2008
Editor-in-Chief: professor Sergey Y. Yurish, phone: +34 696067716, fax: +34 93 4011989,
e-mail: editor@sensorsportal.com
Editors for Western Europe Editor South America
Meijer, Gerard C.M., Delft University of Technology, The Netherlands Costa-Felix, Rodrigo, Inmetro, Brazil
Ferrari, Vitorio, Universitá di Brescia, Italy
Editor for Eastern Europe
Editors for North America Sachenko, Anatoly, Ternopil State Economic University, Ukraine
Datskos, Panos G., Oak Ridge National Laboratory, USA
Fabien, J. Josse, Marquette University, USA Editor for Asia
Katz, Evgeny, Clarkson University, USA Ohyama, Shinji, Tokyo Institute of Technology, Japan

Editorial Advisory Board


Abdul Rahim, Ruzairi, Universiti Teknologi, Malaysia Dickert, Franz L., Vienna University, Austria
Ahmad, Mohd Noor, Nothern University of Engineering, Malaysia Dieguez, Angel, University of Barcelona, Spain
Annamalai, Karthigeyan, National Institute of Advanced Industrial Dimitropoulos, Panos, University of Thessaly, Greece
Science and Technology, Japan Ding Jian, Ning, Jiangsu University, China
Arcega, Francisco, University of Zaragoza, Spain Djordjevich, Alexandar, City University of Hong Kong, Hong Kong
Arguel, Philippe, CNRS, France Donato, Nicola, University of Messina, Italy
Ahn, Jae-Pyoung, Korea Institute of Science and Technology, Korea Donato, Patricio, Universidad de Mar del Plata, Argentina
Arndt, Michael, Robert Bosch GmbH, Germany Dong, Feng, Tianjin University, China
Ascoli, Giorgio, George Mason University, USA Drljaca, Predrag, Instersema Sensoric SA, Switzerland
Atalay, Selcuk, Inonu University, Turkey Dubey, Venketesh, Bournemouth University, UK
Atghiaee, Ahmad, University of Tehran, Iran Enderle, Stefan, University of Ulm and KTB mechatronics GmbH,
Augutis, Vygantas, Kaunas University of Technology, Lithuania Germany
Avachit, Patil Lalchand, North Maharashtra University, India Erdem, Gursan K. Arzum, Ege University, Turkey
Ayesh, Aladdin, De Montfort University, UK Erkmen, Aydan M., Middle East Technical University, Turkey
Bahreyni, Behraad, University of Manitoba, Canada Estelle, Patrice, Insa Rennes, France
Baoxian, Ye, Zhengzhou University, China Estrada, Horacio, University of North Carolina, USA
Barford, Lee, Agilent Laboratories, USA Faiz, Adil, INSA Lyon, France
Barlingay, Ravindra, RF Arrays Systems, India Fericean, Sorin, Balluff GmbH, Germany
Basu, Sukumar, Jadavpur University, India Fernandes, Joana M., University of Porto, Portugal
Beck, Stephen, University of Sheffield, UK Francioso, Luca, CNR-IMM Institute for Microelectronics and
Ben Bouzid, Sihem, Institut National de Recherche Scientifique, Tunisia Microsystems, Italy
Binnie, T. David, Napier University, UK Francis, Laurent, University Catholique de Louvain, Belgium
Bischoff, Gerlinde, Inst. Analytical Chemistry, Germany Fu, Weiling, South-Western Hospital, Chongqing, China
Bodas, Dhananjay, IMTEK, Germany Gaura, Elena, Coventry University, UK
Borges Carval, Nuno, Universidade de Aveiro, Portugal Geng, Yanfeng, China University of Petroleum, China
Bousbia-Salah, Mounir, University of Annaba, Algeria Gole, James, Georgia Institute of Technology, USA
Bouvet, Marcel, CNRS – UPMC, France Gong, Hao, National University of Singapore, Singapore
Brudzewski, Kazimierz, Warsaw University of Technology, Poland Gonzalez de la Rosa, Juan Jose, University of Cadiz, Spain
Cai, Chenxin, Nanjing Normal University, China Granel, Annette, Goteborg University, Sweden
Cai, Qingyun, Hunan University, China Graff, Mason, The University of Texas at Arlington, USA
Campanella, Luigi, University La Sapienza, Italy Guan, Shan, Eastman Kodak, USA
Carvalho, Vitor, Minho University, Portugal Guillet, Bruno, University of Caen, France
Cecelja, Franjo, Brunel University, London, UK Guo, Zhen, New Jersey Institute of Technology, USA
Cerda Belmonte, Judith, Imperial College London, UK Gupta, Narendra Kumar, Napier University, UK
Chakrabarty, Chandan Kumar, Universiti Tenaga Nasional, Malaysia Hadjiloucas, Sillas, The University of Reading, UK
Chakravorty, Dipankar, Association for the Cultivation of Science, India Hashsham, Syed, Michigan State University, USA
Changhai, Ru, Harbin Engineering University, China Hernandez, Alvaro, University of Alcala, Spain
Chaudhari, Gajanan, Shri Shivaji Science College, India Hernandez, Wilmar, Universidad Politecnica de Madrid, Spain
Chen, Rongshun, National Tsing Hua University, Taiwan Homentcovschi, Dorel, SUNY Binghamton, USA
Cheng, Kuo-Sheng, National Cheng Kung University, Taiwan Horstman, Tom, U.S. Automation Group, LLC, USA
Chiriac, Horia, National Institute of Research and Development, Romania Hsiai, Tzung (John), University of Southern California, USA
Chowdhuri, Arijit, University of Delhi, India Huang, Jeng-Sheng, Chung Yuan Christian University, Taiwan
Chung, Wen-Yaw, Chung Yuan Christian University, Taiwan Huang, Star, National Tsing Hua University, Taiwan
Corres, Jesus, Universidad Publica de Navarra, Spain Huang, Wei, PSG Design Center, USA
Cortes, Camilo A., Universidad Nacional de Colombia, Colombia Hui, David, University of New Orleans, USA
Courtois, Christian, Universite de Valenciennes, France Jaffrezic-Renault, Nicole, Ecole Centrale de Lyon, France
Cusano, Andrea, University of Sannio, Italy Jaime Calvo-Galleg, Jaime, Universidad de Salamanca, Spain
D'Amico, Arnaldo, Università di Tor Vergata, Italy James, Daniel, Griffith University, Australia
De Stefano, Luca, Institute for Microelectronics and Microsystem, Italy Janting, Jakob, DELTA Danish Electronics, Denmark
Deshmukh, Kiran, Shri Shivaji Mahavidyalaya, Barshi, India Jiang, Liudi, University of Southampton, UK
Kang, Moonho, Sunmoon University, Korea South Jiao, Zheng, Shanghai University, China
Kaniusas, Eugenijus, Vienna University of Technology, Austria John, Joachim, IMEC, Belgium
Katake, Anup, Texas A&M University, USA Kalach, Andrew, Voronezh Institute of Ministry of Interior, Russia
Kausel, Wilfried, University of Music, Vienna, Austria Rodriguez, Angel, Universidad Politecnica de Cataluna, Spain
Kavasoglu, Nese, Mugla University, Turkey Rothberg, Steve, Loughborough University, UK
Ke, Cathy, Tyndall National Institute, Ireland Sadana, Ajit, University of Mississippi, USA
Khan, Asif, Aligarh Muslim University, Aligarh, India Sadeghian Marnani, Hamed, TU Delft, The Netherlands
Kim, Min Young, Koh Young Technology, Inc., Korea South Sandacci, Serghei, Sensor Technology Ltd., UK
Ko, Sang Choon, Electronics and Telecommunications Research Institute, Sapozhnikova, Ksenia, D.I.Mendeleyev Institute for Metrology, Russia
Korea South Saxena, Vibha, Bhbha Atomic Research Centre, Mumbai, India
Kockar, Hakan, Balikesir University, Turkey Schneider, John K., Ultra-Scan Corporation, USA
Kotulska, Malgorzata, Wroclaw University of Technology, Poland Seif, Selemani, Alabama A & M University, USA
Kratz, Henrik, Uppsala University, Sweden Seifter, Achim, Los Alamos National Laboratory, USA
Kumar, Arun, University of South Florida, USA Sengupta, Deepak, Advance Bio-Photonics, India
Kumar, Subodh, National Physical Laboratory, India Shearwood, Christopher, Nanyang Technological University, Singapore
Kung, Chih-Hsien, Chang-Jung Christian University, Taiwan Shin, Kyuho, Samsung Advanced Institute of Technology, Korea
Lacnjevac, Caslav, University of Belgrade, Serbia Shmaliy, Yuriy, Kharkiv National University of Radio Electronics,
Lay-Ekuakille, Aime, University of Lecce, Italy Ukraine
Lee, Jang Myung, Pusan National University, Korea South Silva Girao, Pedro, Technical University of Lisbon Portugal
Lee, Jun Su, Amkor Technology, Inc. South Korea Singh, V. R., National Physical Laboratory, India
Lei, Hua, National Starch and Chemical Company, USA Slomovitz, Daniel, UTE, Uruguay
Li, Genxi, Nanjing University, China Smith, Martin, Open University, UK
Li, Hui, Shanghai Jiaotong University, China Soleymanpour, Ahmad, Damghan Basic Science University, Iran
Li, Xian-Fang, Central South University, China Somani, Prakash R., Centre for Materials for Electronics Technol., India
Liang, Yuanchang, University of Washington, USA Srinivas, Talabattula, Indian Institute of Science, Bangalore, India
Liawruangrath, Saisunee, Chiang Mai University, Thailand Srivastava, Arvind K., Northwestern University
Liew, Kim Meow, City University of Hong Kong, Hong Kong Stefan-van Staden, Raluca-Ioana, University of Pretoria, South Africa
Lin, Hermann, National Kaohsiung University, Taiwan Sumriddetchka, Sarun, National Electronics and Computer Technology
Lin, Paul, Cleveland State University, USA Center, Thailand
Linderholm, Pontus, EPFL - Microsystems Laboratory, Switzerland Sun, Chengliang, Polytechnic University, Hong-Kong
Liu, Aihua, University of Oklahoma, USA Sun, Dongming, Jilin University, China
Liu Changgeng, Louisiana State University, USA Sun, Junhua, Beijing University of Aeronautics and Astronautics, China
Liu, Cheng-Hsien, National Tsing Hua University, Taiwan Sun, Zhiqiang, Central South University, China
Liu, Songqin, Southeast University, China Suri, C. Raman, Institute of Microbial Technology, India
Lodeiro, Carlos, Universidade NOVA de Lisboa, Portugal Sysoev, Victor, Saratov State Technical University, Russia
Lorenzo, Maria Encarnacio, Universidad Autonoma de Madrid, Spain Szewczyk, Roman, Industrial Research Institute for Automation and
Lukaszewicz, Jerzy Pawel, Nicholas Copernicus University, Poland Measurement, Poland
Ma, Zhanfang, Northeast Normal University, China Tan, Ooi Kiang, Nanyang Technological University, Singapore,
Majstorovic, Vidosav, University of Belgrade, Serbia Tang, Dianping, Southwest University, China
Marquez, Alfredo, Centro de Investigacion en Materiales Avanzados, Tang, Jaw-Luen, National Chung Cheng University, Taiwan
Mexico Teker, Kasif, Frostburg State University, USA
Matay, Ladislav, Slovak Academy of Sciences, Slovakia Thumbavanam Pad, Kartik, Carnegie Mellon University, USA
Mathur, Prafull, National Physical Laboratory, India Tsiantos, Vassilios, Technological Educational Institute of Kaval, Greece
Maurya, D.K., Institute of Materials Research and Engineering, Singapore Tsigara, Anna, National Hellenic Research Foundation, Greece
Mekid, Samir, University of Manchester, UK Twomey, Karen, University College Cork, Ireland
Melnyk, Ivan, Photon Control Inc., Canada Valente, Antonio, University, Vila Real, - U.T.A.D., Portugal
Mendes, Paulo, University of Minho, Portugal Vaseashta, Ashok, Marshall University, USA
Mennell, Julie, Northumbria University, UK Vazques, Carmen, Carlos III University in Madrid, Spain
Mi, Bin, Boston Scientific Corporation, USA Vieira, Manuela, Instituto Superior de Engenharia de Lisboa, Portugal
Minas, Graca, University of Minho, Portugal Vigna, Benedetto, STMicroelectronics, Italy
Moghavvemi, Mahmoud, University of Malaya, Malaysia Vrba, Radimir, Brno University of Technology, Czech Republic
Mohammadi, Mohammad-Reza, University of Cambridge, UK Wandelt, Barbara, Technical University of Lodz, Poland
Molina Flores, Esteban, Benemérita Universidad Autónoma de Puebla, Wang, Jiangping, Xi'an Shiyou University, China
Mexico Wang, Kedong, Beihang University, China
Moradi, Majid, University of Kerman, Iran Wang, Liang, Advanced Micro Devices, USA
Morello, Rosario, DIMET, University "Mediterranea" of Reggio Calabria, Wang, Mi, University of Leeds, UK
Italy Wang, Shinn-Fwu, Ching Yun University, Taiwan
Mounir, Ben Ali, University of Sousse, Tunisia Wang, Wei-Chih, University of Washington, USA
Mukhopadhyay, Subhas, Massey University, New Zealand Wang, Wensheng, University of Pennsylvania, USA
Neelamegam, Periasamy, Sastra Deemed University, India Watson, Steven, Center for NanoSpace Technologies Inc., USA
Neshkova, Milka, Bulgarian Academy of Sciences, Bulgaria Weiping, Yan, Dalian University of Technology, China
Oberhammer, Joachim, Royal Institute of Technology, Sweden Wells, Stephen, Southern Company Services, USA
Ould Lahoucin, University of Guelma, Algeria Wolkenberg, Andrzej, Institute of Electron Technology, Poland
Pamidighanta, Sayanu, Bharat Electronics Limited (BEL), India Woods, R. Clive, Louisiana State University, USA
Pan, Jisheng, Institute of Materials Research & Engineering, Singapore Wu, DerHo, National Pingtung University of Science and Technology,
Park, Joon-Shik, Korea Electronics Technology Institute, Korea South Taiwan
Penza, Michele, ENEA C.R., Italy Wu, Zhaoyang, Hunan University, China
Pereira, Jose Miguel, Instituto Politecnico de Setebal, Portugal Xiu Tao, Ge, Chuzhou University, China
Petsev, Dimiter, University of New Mexico, USA Xu, Lisheng, The Chinese University of Hong Kong
Pogacnik, Lea, University of Ljubljana, Slovenia Xu, Tao, University of California, Irvine, USA
Post, Michael, National Research Council, Canada Yang, Dongfang, National Research Council, Canada
Prance, Robert, University of Sussex, UK Yang, Wuqiang, The University of Manchester, UK
Prasad, Ambika, Gulbarga University, India Ymeti, Aurel, University of Twente, Netherland
Prateepasen, Asa, Kingmoungut's University of Technology, Thailand Yu, Haihu, Wuhan University of Technology, China
Pullini, Daniele, Centro Ricerche FIAT, Italy Yufera Garcia, Alberto, Seville University, Spain
Pumera, Martin, National Institute for Materials Science, Japan Zagnoni, Michele, University of Southampton, UK
Radhakrishnan, S. National Chemical Laboratory, Pune, India Zeni, Luigi, Second University of Naples, Italy
Rajanna, K., Indian Institute of Science, India Zhong, Haoxiang, Henan Normal University, China
Ramadan, Qasem, Institute of Microelectronics, Singapore Zhang, Minglong, Shanghai University, China
Rao, Basuthkar, Tata Inst. of Fundamental Research, India Zhang, Qintao, University of California at Berkeley, USA
Raoof, Kosai, Joseph Fourier University of Grenoble, France Zhang, Weiping, Shanghai Jiao Tong University, China
Reig, Candid, University of Valencia, Spain Zhang, Wenming, Shanghai Jiao Tong University, China
Restivo, Maria Teresa, University of Porto, Portugal Zhou, Zhi-Gang, Tsinghua University, China
Robert, Michel, University Henri Poincare, France Zorzano, Luis, Universidad de La Rioja, Spain
Rezazadeh, Ghader, Urmia University, Iran Zourob, Mohammed, University of Cambridge, UK
Royo, Santiago, Universitat Politecnica de Catalunya, Spain
Sensors & Transducers Journal (ISSN 1726-5479) is a peer review international journal published monthly online by International Frequency Sensor Association (IFSA).
Available in electronic and CD-ROM. Copyright © 2007 by International Frequency Sensor Association. All rights reserved.
Sensors & Transducers Journal

Contents
Volume 89 www.sensorsportal.com ISSN 1726-5479
Issue 3
March 2008

Research Articles

Use of Smart Sensors in the Measurement of Power Quality


A. Moreno-Muñoz, and J. J. G. de la Rosa ........................................................................................ 1

A Multi-Channel, High-Precision Sensor Interface for Low-Power Applications – ZMD21013


Marko Mailand .................................................................................................................................... 10

Studying of a Tunneling Accelerometer with Piezoelectric Actuation and Fuzzy Controller


Ahmadali Tahmasebi Moradi, Yousef Kanani, Behrouz Tousi, Asadollah Motalebi,
and Ghader Rezazadeh ..................................................................................................................... 17

Control of Neutralization Process Using Soft Computing


G. Balasubramanian, N. Sivakumaran and T. K. Radhakrishnan ...................................................... 30

Artificially Controlling the Limb Movement of Robotic Arm Using Machine Interface with
EMG Sensor
Govind Singh Patel, Amrita Rai and Dr. S. Prasad ............................................................................ 39

Active Vibration Control of a Flexible Structure Using Piezoceramic Actuators


J. Fei ................................................................................................................................................... 52

Analysis and Implementation of Nonlinear Transducer Response over a Wider Response


Range
Sheroz Khan, AHM Zahirul Alam, Syed Masrur Ahmmad, TIJANI I. B., Muhammad Asraful Hasan,
Lawal Wahab Adetunji, Salami Femi Abdulazeez, Siti Hana Mohammad Zaini, Siti Aminah
Othman, Saman S. Khan.................................................................................................................... 61

Leak Detection and Model Analysis for Nonlinear Spherical Tank Process Using
Conductivity Sensor
P. Madhavasarma, S. Sundaram ....................................................................................................... 71

Analytical and Fundamental Study of EMATs System


A. Doniavi, M. Eskandarzade, J. Malekani......................................................................................... 77

A Modified Design of an Anemometric Flow Transducer


S. C. Bera and N. Mandal................................................................................................................... 83

A Novel Hybrid Binary Reconstruction Algorithm for Ultrasonic Tomography


M. H. Fazalul Rahiman and R. Abdul Rahim...................................................................................... 93

Authors are encouraged to submit article in MS Word (doc) and Acrobat (pdf) formats by e-mail: editor@sensorsportal.com
Please visit journal’s webpage with preparation instructions: http://www.sensorsportal.com/HTML/DIGEST/Submition.htm

International Frequency Sensor Association (IFSA).


Sensors & Transducers Journal, Vol. 89, Issue 3, March 2008, pp. 17-29

Sensors & Transducers


ISSN 1726-5479
© 2008 by IFSA
http://www.sensorsportal.com

Studying of a Tunneling Accelerometer with Piezoelectric


Actuation and Fuzzy Controller
1
Ahmadali Tahmasebi Moradi, 2Yousef Kanani, 3Behrouz Tousi,
4
Asadollah Motalebi, and 5Ghader Rezazadeh
1,2,5
Mech. Eng. Dept. Urmia University, Urmia, Iran
4
Mech. Eng. Dept. Khoy Azad University, Khoy, Iran
3
Elec. Eng. Dept. Urmia University, Urmia, Iran
5
E-mail: g.rezazadeh@mail.urmia.ac.ir

Received: 10 February 2008 /Accepted: 17 March 2008 /Published: 24 March 2008

Abstract: This report demonstrates the design of closed-loop micro accelerometer sensor. Proposed
sensor consists of a polysilicon cantilever micro beam as a proof mass and uses the extreme sensitivity
of electron tunneling to variations in electrode separation as sensing element of the sensor. The model
uses piezoelectric forces as an actuating element to control the separation between the tunneling
electrodes with a low voltage due to large piezoelectric constant. In order to have a proper response
time a Fuzzy controller is considered which can be very useful, fast, and reliable. The inputs for the
mentioned controller are tunneling current error, gradient of the tunneling current and the summation
of errors. And the output is the piezoelectric voltage. Due to the simulation and its results, it is seen
that the proposed micro accelerometer have high linearity and dynamic range and also have good
respond to the step and sinusoidal acceleration. Copyright © 2008 IFSA.

Keywords: Micro acceleration, Piezoelectric, Tunneling current, Fuzzy controller

1. Introduction
Miniaturization has been one of the most important technological trends in the last decades.
Microminiaturization of mechanical components was started from the microfabricated sensors and was
followed by microfabricated parts, such as beams and membranes, and microactuators. In recent years
the integration of microelectronics, micromechanisms, microsensors and microactuators into
microsystems has become one of the most prominent research areas all over the world.

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Sensors & Transducers Journal, Vol. 89, Issue 3, March 2008, pp. 17-29

One kind of micro sensors is micro accelerometers. Accelerometers measure acceleration, vibration
and shock. Commonly there is a proof mass in accelerometers that acceleration affects it, and with
respect to its movement and its mass, acceleration will be measured. The difference between
accelerometers comes from its structure and method of sensing and actuating corresponding with
acceleration. At the heart of MEMS accelerometer is the micro-mechanical structure which, due to the
acceleration, alters its stiffness, mass or shape. Micro-mechanical elements are typically attached to the
substrate, e.g. with supporting beams or tethers [1, 2].

There are various kinds of measurement mechanisms of the accelerometers, like capacitive,
piezoelectric, piezoresistive, tunneling current and so on. One of the most sensitive and recent
accelerometers are based on the variation of tunneling current. Tunneling accelerometer has three
advantages: one is the super sensitivity caused by the exponential relation between the tunneling
current and the distance. The second is that its sensitivity reduction due to the volume reduction is less
than capacitive devices because the sensitive area is smaller than 1µ m 2 . The third is that the feedback
circuit is simpler than that of a capacitive accelerometer [3-14].

MEMS accelerometers are founded in open-loop and close-loop mode. For static/low frequency
applications, which do not require a high degree of accuracy, they can be used in open-loop
(compensated or uncompensated) but for higher precision applications, negative feedback must be
used to increase linearity, bandwidth and dynamic range. Nowadays researches in close-loop
accelerometer are focused on increasing the dynamic range and bandwidth and decreasing noise
effects, and designing better controller that have good response to different external accelerations such
as step and sinusoidal acceleration. For the closed-loop accelerometer, it has to be noted that an
actuation mechanism is needed. These mechanisms are mainly based on electrostatic, magnetic,
thermal or piezoelectric actuation.

The preponderance of MEMS literature utilizes electrostatic actuation of flexural structures.


Electrostatics is relatively easy to implement, and offers the possibility of large amplitude actuation,
though typically at the cost of large driving voltages and substantial hysteresis. Current-based
actuation approaches, such as those utilized in many thermal and magnetically driven devices,
typically require high power to operate, and in some cases are inherently slow (e.g. due to thermal time
constants). In contrast, the piezoelectric effect can be utilized to drive large displacements in MEMS
structures at modest voltages, low powers, and with low hysteresis. Piezoelectricity shows good
scaling with size. That is, the energy density available for actuation remains high, even as device sizes
drop. The piezoelectric materials have ability to provide electrical signals to drive or sense the device.
However, the researches on using piezoelectric materials to enhance the controlling or improvement of
MEMS structures behaviors such as pull-in voltage are considered recently [15].

Closed loop accelerometers are mostly based on the PID controllers, since using of Fuzzy controllers
or combination of common controllers corresponding with Fuzzy controller aren’t attracted much
attention from the scientific community. The Fuzzy Logic Control uses the qualitative aspects of the
human decision process to construct the control algorithm. The Fuzzy Logic Control achieved all the
goals that the PID and sliding mode control are normally used to achieve. For the last 20 years, Fuzzy
Control Theory has emerged as a fruitful approach to a wide variety of control problems. Fuzzy logic
was first proposed by Lotfi A. Zadeh of the University of California at Berkeley in a 1965 paper[16] ;
he elaborated on his ideas in a 1973 paper that introduced the concept of "linguistic variables" [17]. In
his approach, a Fuzzy implication is defined as a Fuzzy Cartesian product. Based on Zadeh's definition
of implication, Mamdani built the first fuzzy logic controller [18]. Such controller may be used in
various mechanisms, for instance it can be used in micro accelerometer.

Fuzzy controllers use the linguistic rules for controlling systems, so it is quite suitable for the unknown
or non-linear systems that could not be controlled easily with classical control approach like PID
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Sensors & Transducers Journal, Vol. 89, Issue 3, March 2008, pp. 17-29

controller to achieving desired purpose. Fuzzy controllers also have better performance from other
control methods, if well designed. Combining Fuzzy controllers with other classical method lead to
robustness controller such as PID-Fuzzy controller.

In this paper a new closed-loop micro accelerometer with a pair of piezoelectric layers is presented
which has the characteristic of low actuation voltage to the piezoelectric layers, high sensitivity due to
the tunneling measurement, and high linear range to measure the acceleration by means of the closed-
loop mechanism. The accelerometer is modeled into a lump model. Piezoelectric layers is used to
apply a oppose moment to control the displacement of the micro accelerometer which cause to
increase the range of the measurement corresponding to low actuation voltage. The PID-Fuzzy
controller is applied in order to control the actuation voltage to the piezoelectric layers. The obtained
results prove the characteristics of the proposed micro accelerometer are highly acceptable.

2. Electromechanical Behavior of Micro accelerometer

2.1. Model Description and Assumptions

As it is shown in the Fig. 1, assume a beam with thickness h , width w , length L , density ρ and
isotropic with Young’s modulus E that has piezoelectric layers bonded on its top and bottom surfaces.
The piezoelectric layers are located throughout the beam length. And have thickness h1 , density ρ 0 ,

Young’s modulus E P and equivalent piezoelectric coefficient for one-dimensional problem e31 .
Suppose that y is the coordinate along the length of the beam with its origin at the left end, and u ( y ) is
the deflection of the beam, defined to be positive downward.

Fig.1. Schematic of the micro accelerometer.

Microbeams are usually modeled as continuous and prismatic straight beams, made of elastic and
homogeneous material [19], with principal axes of elasticity equally directed for all sections. The
above assumption allows uncoupling flexural, torsional and axial behaviors. Since the flexural
behavior is here mainly considered, transverse displacement and rotation are suitable to write
equilibrium equations.

2.2. Mathematical Model for Micro Accelerometer

For preliminary analysis, as it is shown in Fig. 2 a low-order model is considered by assimilating the
micro accelerometer to a system with lumped parameters.

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Sensors & Transducers Journal, Vol. 89, Issue 3, March 2008, pp. 17-29

Fig. 2. Lumped electromechanical model.

The dynamic equation for the micro accelerometer can be written as:

m&x& + bx& + kx = Fa − F p with Fa = ma , (1)

whereas m is the proof mass, b is the damping coefficient, k is the equivalent stiffness, a is the
external acceleration impose to the system and F p is the equivalent force of the piezoelectric layers.

2.2.1. Equivalent Stiffness

Without considering shear strain of the beam, based on the Euler-Bernoulli beam theory, the
equivalent stiffness for a cantilever beam can be written as:

3EI
k= , (2)
L3
wh 3
where I = is the moment of inertia of the cross-sectional area. For a wide beam, for which
12
~ E ~
w ≥ 5h , the effective modulus E can be approximated by the plate modulus , otherwise E is
(1 − υ )
2

the Young's modulus E where υ is the Poisson’s Ratio.

2.2.2. Equivalent Mass

With considering the first mode for the vibration of the micro cantilever beam, the equivalent mass can
be expressed as:

m ϕ& 2 ( L) L 1
=∫ ρ Aϕ& 2 ( y ) dy , (3)
2 0 2

where ϕ is the first mode shape of a cantilever beam, A is the cross sectional area and ρ is the beam
density.

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Sensors & Transducers Journal, Vol. 89, Issue 3, March 2008, pp. 17-29

2.2.3. Damping Coefficient

There are two sources of mechanical damping: the structural damping: and the viscous damping by gas
flow. The damping in the high Q materials (i.e. CMOS MEMS) is very low. Thus, damping in mainly
MEMS devices caused by viscous flow gas of surrounding the micro structures.

Damping coefficient can be varies with mechanical properties and dominate pressure in accelerometer.
The dominant damping mechanism in lateral accelerometer is squeeze-film damping. For rectangular
plate, the damping coefficient is based on the evaluations by [20], namely:

96 µ L w 3
b= ,
π 4 (g 0 − x )
3 (4)

where g 0 is the initial Gap or initial distance between plate and the ground and µ is the viscosity of
the gas.

2.2.4. Equivalent Piezoelectric Force

The stress in the piezoelectric layer accounting for electro-mechanical effects can be expressed as [21]:

d 2u
σ y = −EP z − e31 E e , (5)
dy 2

where the over-bar represents the parameters in the piezoelectric layer and E e is the electric field in
the piezoelectric layer which is E e = VP / hP . In this model, two piezoelectric layers are bounded top
and bottom through out the length of the beam. The forces in the piezoelectric layers are opposed to
each other direction due to the difference direction of applied voltage to the each piezoelectric layers
V p . The applied force by piezoelectric layers as pointed out by [21] can be written as:

⎛ d 2u ⎞ h / 2+ h p ⎛ d 2u ⎞
⎜ − EP z − e31 (−VP / hP ) ⎟bdz
h/2
P=∫ ⎜⎜ − Ez 2 ⎟⎟bdz + ∫
−h / 2
⎝ dy ⎠ h/2 ⎜ dy 2 ⎟
⎝ ⎠
, (6)
−h / 2 ⎛ d 2u ⎞
+∫ ⎜ − E P z 2 − e31 (VP / hP ) ⎟bdz = 0
−h / 2−h p ⎜ dy ⎟
⎝ ⎠

⎛ d 2u ⎞ h / 2+ h p ⎛ d 2u ⎞
z − E P z 2 − e31 (−VP / hP ) ⎟bdz ,

h/2
M y = 2∫ z ⎜⎜ − Ez 2 ⎟⎟bdz + 2∫ (7)
0
⎝ dy ⎠ h/2 ⎜ dy ⎟
⎝ ⎠

By integrating of the Eq. (7), we have:

2
~ d u d 2u
M y = − EI 2 − E P I P 2 + M p , (8)
dy dy

21
Sensors & Transducers Journal, Vol. 89, Issue 3, March 2008, pp. 17-29

bhP3 h + hP 2
whereas M P = e31VP b(h + h p ) and I P = 2( + bhP ( ) ) . Therefore, the bending moment can be
12 2
written as follow:

d 2 u( y)
M y = −η +Mp, (9)
dy 2

~
whereas η = EI + E P I P . To determine the equivalent piezoelectric force, the other forces on the beam
are neglected. This can be written as: M y = 0 . Thus the equivalent piezoelectric force which is
accounted for the lump model can be expressed as:

F p = k u (L) , (10)

where u (L) is the tip displacement of the micro accelerometer due to the piezoelectric moment.

2.3. Sensing Approach and Operating Principle

Tunneling current ( I t ) is a reference for sensing beam deflection. The relationship between I t and
distance between tunneling tip and conductive surface is given by:

(
I t = Vb exp − α I s )
Φ , with s = g 0 − x (11)

where Vb is tunneling bias across electrode gap, α I = 1.025(A o −1eV −0.5 ) is a constant, s is tunneling gap
and Φ is the effective height of the tunneling barrier. According to experimental results, the effective
barrier height is considered as: Φ = 0.1685 [22].

Sensor measures acceleration with respect to variation of tunneling current. A Controller has been
designed to make beam position zero, this can be achieved with applying voltage to piezoelectric
layers. This voltage is the sensor output which is used to calculate input acceleration. The gain that
must be multiplied to piezoelectric voltage to calculate the input acceleration can be obtained from
sensor simulation and tests. The block diagram of the closed-loop system is shown in the Fig. 3:

Fig. 3. Block diagram of the closed-loop system.

2.4. Design of Fuzzy Controller

Fuzzy controller is developed to control the beam deflection about its static position, and increase the
sensor measuring range. The fuzzy control system generates the control action from a set of rules
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Sensors & Transducers Journal, Vol. 89, Issue 3, March 2008, pp. 17-29

representing the heuristic knowledge about the plant to be controlled [23]. Fuzzy controller consists off
three steps:

1- Fuzzification
2- Rule base decision
3- Defuzzification

A crisp data as input is converted to degree of membership for any linguistic condition by a look up in
one or several membership functions. Decision makes by rule base part that includes IF-THEN rule
created by expert knowledge. And defuzzification gives a crisp data for output from fuzzy outputs.

The input of the designed controller is based on tunneling current, gradient of tunneling current and
summation of errors and the piezoelectric voltage is the output. The input and output membership
functions are shown in Fig. 4. and Fig. 5, respectively. Tunneling current changes exponentially due to
the tunneling gap, so this sensor has different behavior for positive and negative acceleration. For the
equal negative and positive acceleration, if the controller rules are the same for those accelerations,
larger deflection would be obtained for the negative acceleration than the positive one. Therefore, in
this design has been tried to have a better performance for the negative acceleration, so current
memberships designed exact symmetric to beam deflection not to tunneling current.

NL NS ZO PS PL NL NS ZO PS PL
1 1

0.8 0.8
Degree of membership

Degree of membership

0.6 0.6

0.4 0.4

0.2 0.2

0 0

-1 0 1 2 -2.5 -2 -1.5 -1 -0.5 0 0.5 1 1.5 2 2.5


10 10 10 10
current (nA) current's derivate *107

NL NS ZO PS PL
1

0.8
Degree of membership

0.6

0.4

0.2

-2 -1 0 1 2 3 4 5
integral of current errors

Fig. 4. Input membership functions.

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Sensors & Transducers Journal, Vol. 89, Issue 3, March 2008, pp. 17-29

NH NL NS ZO PS PL PH NL NS ZO PS PL
1 1

0.8 0.8

Degree of membership
Degree of membership

0.6
0.6

0.4
0.4

0.2
0.2

0
0
-0.01 -0.008 -0.006 -0.004 -0.002 0 0.002 0.004 0.006 0.008 0.01
-6 -4 -2 0 2 4 6 piezoelectric's voltage
piezoelectric's voltage -3
x 10

(a) (b)

Fig. 5. Output membership functions, a) for PD controller Output, b) for D and I controllers.

Labels NH, NL, NS, ZO, PS, PL and PH represent the negative huge, negative large, negative small,
zero, positive small, positive large and positive huge respectively.

The fuzzy logic rules are similar the below example:

IF (P, D) THEN V,

where P and D are fuzzy sets for current and gradient of the current as inputs and V is output fuzzy set
to determine output voltage.

PID Fuzzy controller designed as three separate controllers, that output voltage for piezoelectric comes
from summation of this controllers. It has been in this way to have a good adjustment for the fuzzy
controller to achieve best performance. First is a D controller for removing oscillation, second is PD
controller, cause to minimizing deflection and third is I controller to make deflection about zero.

To achieve desired voltage, the rules of D, PD, and I controller are shown in Table 1, 2 and 3. PD
controller uses the min intersection operator and all controllers use centroid method for
defuzzification.

Table 1. D FUZZY Control Rules.

dI NL NS ZO PS PL
V NL NS ZO PS PL

Table 2. PD FUZZY Control Rules.

I
NL NS ZO PS PL
dI
NL PL PL ZO ZO ZO
NS PL PS ZO NS NS
ZO PS PS ZO NS NS
PS PS PS ZO NS NL
PL ZO ZO ZO NL NL
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Sensors & Transducers Journal, Vol. 89, Issue 3, March 2008, pp. 17-29

Table 3. I FUZZY Control Rules.

∑ (I − I 0 ) NL NS ZO PS PL
V NL NS ZO PS PL

Defuzzifier factors, KD, KPD and KI were used to easily tune the effect of each controller.

4. Numerical Results and Discussion


For this simulation, quality factor is considered 1. The geometrical and material properties of used
model and defuzzifier factors are listed in Table 4 as:

Table 4. Geometrical and material properties of the MEM actuator and piezoelectric layers.

MEM Actuator Piezoelectric layer (PZT-4)


Length 270 µm 270 µm
Width 60 µm 60 µm
Height 2 µm 0.01 µm
Young’s modulus 190 (GPa) 78.6 (GPa)
Poisson’s ratio 0.06 0.3
Mass density 2331 (Kg/m3) 7500 (Kg/m3)
e31 - (
-9.29 N
volt.m
)
g 0 (initial gap) 1.5 µm
ε (Permittivity of air) 8.854187×10-12 (F/m)
Defuzzifier
factors
KD = 0.9 KPD = 0.3 KI = 0.5

Step response of sensor for applied acceleration 5 g and -5 g shows in Fig. 6. As it can be seen, sensor
responses are different for the positive and negative acceleration, although have a robust behavior in
negative acceleration. Deflection is very small (about 1 A o ) and Response time is about 25 µs.

Controller's outputs are shown in Fig. 7 for applied acceleration 5g, and -5g, respectively.

Behavior of system due to harmonic accelerations simulated with maximum acceleration of 5 g for
30 KHz and 50 g for 1 KHz. As can be seen, this sensor has good results in harmonic acceleration with
considering its relative lower deflection (Fig.8-11).

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Sensors & Transducers Journal, Vol. 89, Issue 3, March 2008, pp. 17-29
-11 deflection of beam for step acceleration input
x 10
10
+5g
-5g
8

deflection
2

-2

-4
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
time x 10
-4

Fig. 6. Step response for applied acceleration 5g and -5g.

-4
x 10 pizoeelectric voltage
1.5

1 5g
-5g

0.5
pizeoelectric voltage [V]

-0.5

-1

-1.5

-2
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
time x 10
-4

Fig. 7. Piezoelectric voltage for applied acceleration 5g and -5g.

-11
x 10 deflection of beam for step acceleration input
8

2
deflection

-2

-4

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1


time x 10
-4

Fig. 8. Deflection vs. time for 5g 30 KHz.

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Sensors & Transducers Journal, Vol. 89, Issue 3, March 2008, pp. 17-29
-4
x 10 pizoeelectric voltage
1.5

pizeoelectric voltage [V]


0.5

-0.5

-1

-1.5
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
time -4
x 10

Fig. 9. Piezoelectric voltage vs. time for 5 g 30 KHz.

-11 deflection of beam for step acceleration input


x 10
6

0
deflection

-2

-4

-6

-8
0 0.5 1 1.5 2 2.5
time x 10
-3

Fig. 10. Deflection vs. time for 50g 1 KHz.

-3
x 10 pizoeelectric voltage
1.5

1
pizeoelectric voltage [V]

0.5

-0.5

-1

-1.5
0 0.5 1 1.5 2 2.5
time x 10
-3

Fig. 11. Piezoelectric voltage vs. time for 50 g 1 KHz.

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Sensors & Transducers Journal, Vol. 89, Issue 3, March 2008, pp. 17-29

As it is shown in Fig. 12, the Linearity of the designed sensor is about << 1%.
-4
x 10
2

voltage [V] 0

-1

-2
-6 -4 -2 0 2 4 6
input acceleration [g]

Fig. 12. Piezoelectric voltage vs. acceleration.

Conclusion
The primary of this work was to demonstrate a micro accelerometer with high sensitivity due to
exponential relationship between tunneling electrodes and tunneling current. And use very low
controlling voltage due to large piezoelectric constant. Because of a highly fast, reliable and precise
controller was needed, the Fuzzy controller was implemented. The simulation results showed that the
proposed micro accelerometer can be used for a 5g and -5g step acceleration with a 25 µs response
time without contacting the tunneling electrodes. And also can be used for measuring a harmonic
acceleration with 5 g, 30 KHz and 50 g, 1 KHz.

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