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2SD965 (D965)
Silicon NPN epitaxial planar type
5.1±0.2
■ Features
• Low collector-emitter saturation voltage VCE(sat)
0.7±0.2
• Satisfactory operation performances at high efficiency with the low- 0.7±0.1
voltage power supply.
12.9±0.5
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit 0.45+0.15
–0.1 0.45+0.15
–0.1
2.3±0.2
1: Emitter
Collector current IC 5 A 2: Collector
3: Base
Peak collector current ICP 8 A TO-92 Package
Collector power dissipation PC 750 mW
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
PC Ta IC VCE IC VBE
1 000 2.4 6
Ta = 25°C VCE = 2 V 25°C
IB = 7 mA
Collector power dissipation PC (mW)
2.0 5
800 Ta = 75°C −25°C
6 mA
400 3 mA
0.8 2
2 mA
200
0.4 1
1 mA
0 0 0
0 20 40 60 80 100 120 140 160 0 0.4 0.8 1.2 1.6 2.0 2.4 0 0.4 0.8 1.2 1.6 2.0
Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V)
VCE = 2 V
Base-emitter saturation voltage VBE(sat) (V)
Ta = 25°C
500
200
0.01 0.1
100
0.001 0.01 0
0.01 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10
Collector current IC (A) Collector current IC (A) Collector current IC (A)
Ta = 25°C
Transition frequency fT (MHz)
80
300 10 ICP
Collector current IC (A)
IC
60 t = 10 ms
Collector output capacitance
t=1s
200 1
40
100 0.1
20
0 0 0.01
− 0.01 − 0.1 −1 −10 1 10 100 0.1 1 10 100
Emitter current IE (A) Collector-base voltage VCB (V) Collector-emitter voltage VCE (V)