^^mi-donductoi Lpioauati, Ona.

20 STERN AVE. TELEPHONE: (973) 376-2922

SPRINGFIELD, NEW JERSEY 07081 (212)227-6005
U.S.A. FAX: (973) 376-8960

RFH45N05, RFH45N06

Power MOS Field-Effect Transistors

TERMINAL DIAGRAM
N-Channel Enhancement-Mode
Power Field-Effect Transistors
45 A, 50 V - 60 V
rostoni = 0.040 n
Features:
SOA is power-dissipation limited
Nanosecond switching speeds
Linear transfer characteristics
High input impedance
Majority carrier device
High-current, low-inductance package N-CHANNEL ENHANCEMENT MODE

TERMINAL DESIGNATIONS
The RFH45N05 and RFH45N06' are n-channel enhance-
ment-mode silicon-gate power field-effect transistors
designed for applications such as switching regulators, RFH45N05
switching converters, motor drivers, relay drivers, and RFH45N06
drivers for high-power bipolar switching transistors
requiring high speed and low gate-drive power. These types
can be operated directly from Integrated circuits.
The RFH-types are supplied in the JEDEC TO-218AC
plastic package.

JEDEC TO 218AC

MAXIMUM RATINGS, Absolute-Maximum Values (To = 25" C):

RFH45NOS RFH4SN06

DRAIN-SOURCE VOLTAGE VDSS so 60 V

DRAIN-GATE VOLTAGE. R,. " 1 MO VOOB so 60 V
GATE-SOURCE VOLTAGE Vos ±20 V
DRAIN CURRENT. RMS Continuous ID 45 A
PulfiSd IDU 100 A
POWER DISSIPATION @ Tc = 25'C PT 150 W
Derate above Tc - 25° C 1.2 W/'C
OPERATING AND STORAGE TEMPERATURE. .T..T., .-55(0+150.

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors
 RFH45N05, RFH45N06
ELECTRICAL CHARACTERISTICS, at Case Temperature (Tc) = 25°C unless otherwise speciried.

LIMITS
TEST
CHARACTERISTIC SYMBOL CONDITIONS RFH45NOS RFH45N06 UNITS

Mln. Max. Mln. Max.

Drain-Source Breakdown BVoss ID = 1 mA 50 60 — V

Voltage Vos = 0
Gate Threshold Voltage Vos(th) Vas = VDS 2 4 2 4 V
ID s 1 mA
Zero Gate Voltage Drain loss VDS * 40 V 1
Current Vos = 50 V 1
Tc"125*C M
VM = 40 V - 50 -
Vos = 50 V 50
Gate-Source Leakage loss Vos = ± 20 V — 100 100 nA
Current VM = 0
Drain-Source On Voltage VD8(on)« ID * 22.5 A ^~ 0.9 ~ 0.9
Vos = 10 V
V
ID = 45 A — 3.6 3.6
Vos = 10 V
Static Drain-Source On ros(on)» ID = 22.5 A — .04 .04 0
Resistance Vos = 10 V
Forward Transconductance g>," Vos = 10V 10 — 10 — mho
ID =• 22.5 A
Input Capacitance C,» Vos = 25 V - 3000 - 3000
Output Capacitance COM Vos = 0 V — 1800 — 1800 PF
Reverse Transfer Capacitance c™ f=1MHz — 750 — 750
Turn-On Delay Time td(on) Vos * 30 V 40(typ) 80 40(typ) 80
Rise Time t, ID = 22.5 A 310(typ) 475 310(typ) 475
ns
Turn-Ofl Delay Time Wolf) R(w"R<j«-50n 220(typ) 350 220(typ) 350
Fall Time t. Vos = 10 V 240(typ) 376 240(typ) 375
Thermal Resistance R«ic RFH45N05,
Junction-to-Case RFH45N06 - 0.83 - 0.83 "C/W
Series

•Pulsed: Pulse duration = 300 //s max.. duty cycle = 2%.

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

LIMITS

CHARACTERISTIC TEST CONDITIONS RFH4SN05 RFH4SN06 UNITS

Mln. Max. Mln. Max.

Diode Forward Voltage V80 ' ISD = 22.5A - 1.4 - 1.4 V

Reverse Recovery Time . tr. IF « 4A. a,r/a, = 100 MUS 150 (typ.) 150 (typ.) ns

' Pulse Test: Width < 300 //a, Duty cycle < 2%.