Code No: R1621023 R16 SET - 1

II B. Tech I Semester Regular Examinations, October/November - 2017

BASIC ELECTRONICS AND DEVICES
(Electrical and Electronics Engineering)
Time: 3 hours Max. Marks: 70
Note: 1. Question Paper consists of two parts (Part-A and Part-B)
2. Answer ALL the question in Part-A
3. Answer any FOUR Questions from Part-B
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~
PART –A
1. a) State the continuity equation (2M)
b) List the applications of Light Emitting Diode. (2M)
c) Define peak inverse voltage of a rectifier. (2M)
d) Draw the h parameter model of a common collector amplifier (3M)
e) Compare BJT and FET (2M)
f) List different topologies in negative feedback amplifiers? (3M)
PART -B
2. a) Discuss about the charge densities and Fermi level in a semiconductor having (7M)
impurities
b) Describe the generation and recombination of charges in semiconductor (7M)
devices

3. a) Discuss about the V-I characteristics of a p-n junction diode, and its (7M)
temperature dependence
b) What is photo diode? Explain its construction and operation (7M)

4. a) Draw the circuit diagram for full-wave bridge rectifier and explain its (7M)
principle of operation
b) Calculate the percentage ripple for the voltage developed across a 120 µF (7M)
capacitor when providing a load current of 80 mA. The full-wave rectifier
operating from the 50Hz supply develops a peak rectified voltage of 24 V

5. a) Prove that the transistor acts an amplifier with suitable circuit diagram (7M)

b) What are the important parameters one can obtain from the input, and output (7M)
characteristics of CE configuration? Discuss about them

6. a) (7M)
Explain the importance of FET as an amplifier
b) Describe the operation of an enhancement type MOSFET (7M)

7. a) (7M)
Explain the effects of negative feedback on amplifier characteristics?
b) Draw the circuit diagram of Colpitt’s oscillator and explain its operation? (7M)

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Code No: R1621023 R16 SET - 2

II B. Tech I Semester Regular Examinations, October/November - 2017

BASIC ELECTRONICS AND DEVICES
(Electrical and Electronics Engineering)
Time: 3 hours Max. Marks: 70
Note: 1. Question Paper consists of two parts (Part-A and Part-B)
2. Answer ALL the question in Part-A
3. Answer any FOUR Questions from Part-B
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~

PART –A
1. a) Define the terms Mobility and Conductivity (2M)
b) Describe how diffusion and transition capacitances differ (2M)
c) Define Load and Line Regulation (2M)

d) Compare CE, CB and CC amplifiers (3M)

e) Write the applications of Silicon control rectifiers (3M)
f) What is Barkhausen Criterion? (2M)
PART -B
2. a) Discuss about Fermi level in intrinsic and extrinsic semiconductor materials (7M)
b) Determine the concentration of free electrons and holes in a sample of Ge at (7M)
3000K which has a concentration of donor atoms equal to 2 × 1014 atoms/cm3
and a concentration of acceptor atoms equal to 3 × 1014 atoms/ cm3. Is this p –
or n –type Germanium? Justify your answer.

3. a) Explain principle of operation of LED, and PIN diodes (7M)

b) Give the quantitative theory of p-n diode currents and hence deduce the diode (7M)
equation.

4. a) Explain the operation of a π- section filter, and derive expression for the ripple (7M)
factor.
b) A dc power supply circuit is to be designed for the given specifications: Vdc = (7M)
5V, Idc = 200 mA. Use Si diodes and a centre tapped transformer. Assume
necessary data.

5. a) Give the analytical expressions for transistor characteristics (7M)

b) What is thermal Runaway? How do you avoid it in amplifier circuits using (7M)
BJT? Derive suitable expression to avoid it

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Code No: R1621023 R16 SET - 2

6. a) Discuss about the transfer characteristics of JFET, and give the importance of (7M)
Shockley’s equation
b) Give the construction details and characteristics of depletion type MOSFET (7M)

7. a) With the help of a suitable BJT based voltage series feedback amplifier (7M)
diagram, explain the features and benefits of negative feedback in amplifiers
b) Derive the expression for frequency of oscillation in a Hartley Oscillator. (7M)

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Code No: R1621023 R16 SET - 3

II B. Tech I Semester Regular Examinations, October/November - 2017

BASIC ELECTRONICS AND DEVICES
(Electrical and Electronics Engineering)
Time: 3 hours Max. Marks: 70
Note: 1. Question Paper consists of two parts (Part-A and Part-B)
2. Answer ALL the question in Part-A
3. Answer any FOUR Questions from Part-B
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~

PART –A
1. a) What is the importance of Law of Junction (2M)
b) Differentiate between Avalanche and Zener breakdowns. (3M)
c) State the advantages of a bridge rectifier. (2M)
d) Distinguish cascade and cascode amplifiers. (3M)
e) Draw the low frequency model of a FET. (2M)
f) Show that gain reduces with negative feedback (2M)
PART -B
2. a) State and explain the Hall Effect. Mention its applications. (7M)
b) A sample of Ge is doped to the extent of 1014 donor atoms/cm3 and 7 × 1013 (7M)
acceptor atoms/cm3. At the temperature of the sample, the resistivity of pure
Ge is 60 ohm – cm. If the applied electric field is 2 V/cm, find the total
conduction current density.

3. a) Explain the terms ‘Avalanche breakdown’ and ‘Zener breakdown and give (7M)
examples.
b) Discuss about working principle of Varactor diode and photo diode with neat (7M)
sketches

4. a) (7M)
Discuss about L –section filter and derive the expression for the ripple factor.
b) A full-wave single phase rectifier employs π- section filter consisting of two (7M)
10 µF capacitances and a 20 H choke. The transformer voltage to center tap is
300 V. The load current is 50 mA. Calculate the dc output voltage and the
ripple voltage. Assume that the resistance of the choke is 200 ohms.

5. a) Derive the expression for current gain in CE configuration in terms of current (7M)
gain of CB configuration
b) With suitable sketches, explain input and output characteristics of CC (7M)
configuration in detail

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Code No: R1621023 R16 SET - 3

6. a) What is the significant difference between the construction of an enhancement (7M)

type MOSFET and a depletion type MOSFET?
b) Given a depletion type MOSFET with IDSS = 6 mA and Vp = - 3V, determine (7M)
the drain current at VGS = - 1 V, 0 V, 1V, and 2 V. Compare the difference in
current levels between -1 and 0 V with the difference between 1 and 2 V. In
the positive VGS region, does the drain current increase at a significantly
higher rate than for negative values? Is there a linear or nonlinear relationship
between ID and VGS? Explain

7. a) The total harmonic distortion of an amplifier is reduced from 15% to 3% (7M)

when 4% negative feedback is used. Find (i) voltage gain without feedback
(ii) voltage gain with feedback
b) Describe the crystal oscillator. What is the advantage of a crystal oscillator (7M)
over an LC oscillator?

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Code No: R1621023 R16 SET - 4

II B. Tech I Semester Regular Examinations, October/November - 2017

BASIC ELECTRONICS AND DEVICES
(Electrical and Electronics Engineering)
Time: 3 hours Max. Marks: 70
Note: 1. Question Paper consists of two parts (Part-A and Part-B)
2. Answer ALL the question in Part-A
3. Answer any FOUR Questions from Part-B
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~
PART –A
1. a) Draw the energy band diagram of an Insulator, Semiconductor and a metal. (3M)
b) Write the applications of Varactor diode (2M)
c) What are the different types of Regulators (2M)
d) What is thermal run away? (2M)
e) Show that µ = gm rd in a Field Effect Transistor. (3M)
f) Differentiate between an oscillator and an amplifier (2M)
PART -B
2. a) Describe the terms intrinsic and extrinsic semiconductors of both P type and N (7M)
type
b) Describe the differences between n - type and p - type semiconductor materials (7M)
with suitable examples.

3. a) What are the current components in a p-n diode? Deduce the expression for (7M)
diode equation.
b) With suitable sketches explain the principle of operation of Tunnel Diode. (7M)

4. a) With suitable sketches, explain the operation of a full-wave rectifier with (7M)
capacitive filter. Derive the expression for the ripple factor.
b) A full-wave rectifier has an output dc voltage of 150 V along with unwanted (7M)
ripple voltage Vr,rms = 15 V. If a C-R-C filter is used between the rectifier and a
load of 5000 ohms, calculate the ripple factor at load. Assume that filter has the
component values in the same order as 15 µF, 500 ohms, and 10 µF.

5. a) With the help of the CE configuration circuit, explain input, output (7M)
characteristics and various regions of the configuration in detail.
b) Discuss about the CB configuration and its input, output characteristics in (7M)
detail.

6. a) Sketch a p-channel enhancement type MOSFET with proper biasing applied (7M)
and indicates the channel, the direction of electron, and the resulting depletion
region.
b) Discuss the Principle of operation and characteristics of Thyristors (7M)

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Code No: R1621023 R16 SET - 4

7. a) Explain the nature of feedback in an emitter follower circuit. State the (7M)
advantages of this circuit and mention its use. Can this circuit be used as a
voltage amplifier?
b) With the help of suitable schematic and description, show that both positive (7M)
and negative feedback are used in a Wien Bridge oscillator. Establish the
condition for oscillations

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Code No: R1621041 R16 SET - 1
II B. Tech I Semester Regular Examinations, October/November - 2017
ELECTRONIC DEVICES AND CIRCUITS
(Com to ECE, EIE and ECC)
Time: 3 hours Max. Marks: 70
Note: 1. Question Paper consists of two parts (Part-A and Part-B)
2. Answer ALL the question in Part-A
3. Answer any FOUR Questions from Part-B
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~

PART –A
1. a) What is intrinsic semiconductor? (2M)
b) Write the disadvantages of LED (2M)
c) Define Ripple factor and peak inverse voltage (3M)
d) Write the applications of JFET (2M)
e) What are the advantages of self-biasing circuit? (3M)
f) What is emitter follower? (2M)
PART –B
2. a) Explain in detail about Hall effect (7M)
b) Calculate the resistivity of intrinsic germanium at 300  .Assume  = (7M)
2
10   ,  = 3800 / −   = 1800 / − 

3. a) Explain the formation of depletion region in a PN junction (7M)

b) A P-N junction silicon diode has a reverse saturation current of 50nA at room (7M)
temperature 27  . If the new reverse saturation current is observed to be
160nA , calculate the value of new temperature.

4. a) Draw and explain the circuit diagram of full wave rectifier with L-section filter (7M)
b) In half-wave rectifier an ac voltage of peak value 24V is connected in series (7M)
with silicon diode and load resistance of 480Ω. If the forward resistance of the
diode is 20Ω, find average load current and rms value of load current.

5. a) Explain input and output characteristics of a transistor in CB configuration (7M)

b) A certain JFET operates in the linear region with a constant drain voltage of (7M)
1V. When the gate voltage is 2V, a drain current of 10mA flows, but when gate
voltage is changed to 1V, the drain current becomes 22.8mA. Find (a) the
pinch-off voltage (b)the channel resistance for zero gate voltage

6. a) Explain any two bias compensation techniques (7M)

b) An npn transistor if β=50 is used in CE circuit with  = 10,  = 2!Ω. (7M)
The bias is obtained by connecting 100kΩ resistor from collector to base. Find
the quiescent point and stability factor.
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Code No: R1621041 R16 SET - 1

7. a) Draw the h-parameters equivalent circuit for a common emitter amplifier and (7M)
derive the Expression for Ai ,RI, Av.
b) Compare the performance of BJT as an amplifier in CE, CB, CC configuration (7M)

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Code No: R1621041 R16 SET - 2

II B. Tech I Semester Regular Examinations, October/November - 2017

ELECTRONIC DEVICES AND CIRCUITS
(Com to ECE, EIE and ECC)
Time: 3 hours Max. Marks: 70
Note: 1. Question Paper consists of two parts (Part-A and Part-B)
2. AnswerALL the question in Part-A
3. Answer any FOUR Questions from Part-B
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~

PART –A
1. a) What is meant by doping in semiconductor? (2M)
b) Write the advantages of photo diode (2M)
c) Define Transformer utilization factor (2M)
d) Why are n-channel MOSFETs preferred over P-channel MOSFET? (3M)
e) What are the advantages of fixed biasing circuit? (2M)
f) What is an amplifier ?What are the various types of amplifiers (3M)
PART -B
2. a) Derive continuity equation and state its special cases (7M)
b) The mobility of free electrons and holes in pure silicon are 0.13 and 0.05" / (7M)
 − and the corresponding values for pure germanium are 0.38 and 0.18" /
 −  respectively .Determine the values intrinsic conductivity for both silicon
and germanium. Given that  = 2.5
10% / for geranium and  =
2.5
10% / for silicon at room temperature.

3. a) Derive the expression for diffusion capacitance in PN junction (7M)

b) Explain in detail about V-I characteristics of a zener diode. (7M)

4. a) Draw and explain the circuit diagram of full wave rectifier with inductor filter (7M)
b) A zener diode shunt regulator circuit is to be designed to maintain a constant (7M)
load current 400mA and voltage 40V. The input voltage is 90±5V. The zener
voltage is 40V and its dynamic resistance is 2.5Ω.Find the following quantities
for regulator: (a) the series dropping resistance (b) zener power dissipation (c)
load resistance .assume the zener current to be10% of load current.

5. a) Explain input and output characteristics of a transistor in CE configuration (7M)

b) Explain the four distinct regions of the output characteristics of JFET (7M)

6. a) What is thermal runaway? Explain how it can be avoided. (6M)

b) A silicon transistor with β=80 is use in self-biasing arrangement with = (8M)
15,  = 4.7!Ω. The operating point Q is at ' = 8.2, ( = 1.2) . find
values  , "  ' .
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Code No: R1621041 R16 SET - 2

7. a) For a common source amplifier as shown in Figure 2, operating point is (7M)

defined byVGSQ= -2.5V, VP= -6V & IDQ=2.5mA with IDSS=8mA.
Calculate gm, rd , Zi , Zo &Voltage gain Av

.
b) Derive the expressions for Z i, Zo and Av for common drain J-FET amplifier (7M)

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Code No: R1621041 R16 SET - 3

II B. Tech I Semester Regular Examinations, October/November - 2017

ELECTRONIC DEVICES AND CIRCUITS
(Com to ECE, EIE and ECC)
Time: 3 hours Max. Marks: 70
Note: 1. Question Paper consists of two parts (Part-A and Part-B)
2. AnswerALL the question in Part-A
3. Answer any FOUR Questions from Part-B
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~
PART –A
1. a) What is diffusion current? (2M)
b) Write the Application of PN junction diode (2M)
c) What is need for filters in power supplies? (2M)
d) Compare JFET with BJT (3M)
e) What is need for biasing a transistor? (2M)
f) What is h-parameter for a transistor? (3M)
PART -B
2. a) Prove that Fermi level lies in the Centre of forbidden band for intrinsic (7M)
semiconductor
b) The resistivity of pure silicon is 2.3
10* Ω −  + 27 , . Calculate intrinsic (7M)
concentration at 127 ,

3. a) Derive the expression for Transition capacitance in PN junction (7M)

b) Explain the tunneling effect with the help neat diagrams (7M)

4. a) Derive expression for ripple factor and rms value of voltage of full wave (7M)
rectifier with resistive load
b) An L-C filter is to be used to provide a dc output with1% ripple filter from a (7M)
full-wave rectifier operating at 50Hz.AssumeL/C =0.01, determine the required
values of L and C

5. a) Calculate the collector current and emitter current for a transistor with -./ = (7M)
0.99  (12 = 50) 3ℎ +ℎ 5 6+ 7 20 A
b) Explain construction of n channel JFET with neat diagram (7M)

6. a) determine the stability factor for a CB amplifier circuit (7M)

b) In voltage divider bias circuit, if  = 10, ' = 5, ( = 1.2), " = (7M)
10!Ω, 8 = 100  ' = 270Ω, 969+   . 6 1'(;/<) =
0.6

7. a) Draw the hybrid parameter equivalent circuit for an NPN common (7M)
emittertransistor and explain.
b) For common source amplifier VGSQ=-2V, IDSS=8mA, Vp=-8V, Yos=20µs, (7M)
RG=1MΩ, RD=5.1KΩ, calculate gm, rd, Zi, Zo and Av
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Code No: R1621041 R16 SET - 4

II B. Tech I Semester Regular Examinations, October/November - 2017

ELECTRONIC DEVICES AND CIRCUITS
(Com to ECE, EIE and ECC)
Time: 3 hours Max. Marks: 70
Note: 1. Question Paper consists of two parts (Part-A and Part-B)
2. AnswerALL the question in Part-A
3. Answer any FOUR Questions from Part-B
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~
PART –A
1. a) What is drift current? (2M)
b) Define the term transition capacitance CT of PN junction diode (3M)
c) What are the advantages of bridge rectifier? (3M)
d) What is early effect? (2M)
e) What is meant by Q-point? (2M)
f) Write the advantages of h-parameters. (2M)
PART -B
2. a) Derive the expression for the conductivity of extrinsic n type an p type (7M)
semiconductor.
b) Calculate the resistivity of silicon if donor type of impurity is added to the (7M)
extent of 1 atom per 10? silicon atom, at 300   6  =
1300 / − 

3. a) Derive the expression for Dynamic Resistor in PN junction (7M)

b) Explain the working principal of PIN diode (7M)

4. a) Derive expression for ripple factor in full wave rectifier using inductor filter (7M)
b) Design a zener regulator for following specification: load current=20mA, (7M)
output voltage=5V, zener wattage=500mW, input voltage=12±2V and
IZmin=8mA.

5. a) A transistor operating in CB configuration has ( = 2.98)  (' = (7M)

3)(2 = 0.01) what current will flow in collector circuit, of this
transistor when connected in CE configuration with a base current of 30)
b) Draw an explain the drain characteristics of n-channel enhancement type (7M)

6. a) Derive the expression for stability factor of a collector to base bias circuit (7M)
b) Determine the operating point for the circuit of a potential divider bias (7M)
arrangement with " = / = !Ω, ' = 1!Ω  = 40!Ω

7. a) Explain in detail about the h-parameters using a two port network model (7M)
b) The amplifier utilizes n-channel FET using source self bias circuit for which (7M)
Vp=-2V, IDSS=1.65 mA. It is desired to bias the circuit at ID=0.8 mA,
Av=20 dB using VDD=4V. Assume rd >> RD,
find i) VGs ii) gm iii) Rs iv) RD
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Code No: R1621055 R16 SET - 1

II B. Tech I Semester Regular Examinations, October/November - 2017

DATA STRUCTURES THROUGH C++
(Com to CSE & IT)
Time: 3 hours Max. Marks: 70
Note: 1. Question Paper consists of two parts (Part-A and Part-B)
2. Answer ALL the question in Part-A
3. Answer any FOUR Questions from Part-B
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~

PART –A
1. a) Define Abstraction? (2M)
b) Convert the following expression into postfix A-B*C+D-E+F/G-H (3M)
c) What are chain iterators? (2M)
d) Define Max heap? (2M)
e) Define Spanning tree? (2M)
f) Give the Best case, Average case, Worst case time complexity of Recursive (3M)
Merge sort?
PART -B
2. a) Explain Oops Concepts? (7M)
b) Discuss about representation of polynomial using Abstract Data Type? (7M)

3. a) Write a C++ Program to pop an element from the stack? (7M)

b) Explain different types of inheritances available in C++? (7M)

4. a) Write a C++ Program to insert an element at last position into a single linked (7M)
list?
b) Explain about equivalence class? (7M)

5. a) If number of elements in a binary search tree are N. Give two sample binary (7M)
search tree where the search time is proportional to i) Log N ii) N
b) Explain with examples different cases of deletion of elements in a binary (7M)
search tree?

6. a) Write an algorithm to traverse a graph using breadth first search? (7M)

b) Discuss about different ways of representing Graphs in memory? (7M)

7. a) Write a C++ program to sort the following elements using Recursive Merge (7M)
Sort?
b) Trace the above program for the following elements? (7M)
12, 25, 5, 9, 1, 84, 63, 7, 15, 4, 3

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Code No: R1621055 R16 SET - 2

II B. Tech I Semester Regular Examinations, October/November - 2017

DATA STRUCTURES THROUGH C++
(Com to CSE & IT)
Time: 3 hours Max. Marks: 70
Note: 1. Question Paper consists of two parts (Part-A and Part-B)
2. Answer ALL the question in Part-A
3. Answer any FOUR Questions from Part-B
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~

PART –A
1. a) Define Encapsulation? (2M)
b) Where operator Stack is used? (2M)
c) Define a node of Single linked list in C++? (2M)
d) Can we have a binary tree whose postorder and preorder traversal same? Give (3M)
example?
e) What are connected components? (2M)
f) Give the best case, Average case, Worst case time complexity of Insertion sort? (3M)
PART -B
2. a) With an example Explain the procedure of transposing a Sparse matrix? (7M)
b) Discuss about Array as an Abstract Data Type? (7M)

3. a) Write a Program to push an element into a stack? (7M)

b) Implement container classes using templates? (7M)

4. a) Discuss about implementing Chains with templates? (7M)

b) Discuss about implementation of queues using linked list? (7M)

5. a) Create max heap for the following elements(20, 12, 14, 3, 52, 15, 139, 27, 190) (7M)
b) What are Tree iterators? Explain (7M)

6. a) Write an algorithm to traverse a graph using Depth first search? (7M)

b) Explain about All pairs shortest path algorithm? (7M)

7. a) Write a C++ program to sort the following elements using Insertion Sort? (7M)
b) Trace the above program for the following elements? (7M)
65, 6, 54, 63, 56, 61, 14, 39, 28, 16, 30.

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Code No: R1621055 R16 SET - 3

II B. Tech I Semester Regular Examinations, October/November - 2017

DATA STRUCTURES THROUGH C++
(Com to CSE & IT)
Time: 3 hours Max. Marks: 70
Note: 1. Question Paper consists of two parts (Part-A and Part-B)
2. Answer ALL the question in Part-A
3. Answer any FOUR Questions from Part-B
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~

PART –A
1. a) What is a copy constructor? (2M)
b) What are container classes? (2M)
c) With a neat diagram represent 3 elements ( 10,15,19) in double linked list? (2M)
d) Can we have a binary tree whose inorder and postorder traversal same? Give (3M)
example?
e) Define Bi Connected components? (2M)
f) Give the best case, Average case, Worst case time complexity of Quick sort? (3M)
PART -B
2. a) Explain about Polymorphism in C++ with suitable examples? (7M)
b) Discuss about Sparse matrix representation with an example? (7M)

3. a) Write a C++ Program to insert an element in a Queue? (7M)

b) Write an algorithm to evaluate postfix expression? (7M)

4. a) Write a C++ Program to count the number of elements present in a Single (7M)
linked list?
b) Discuss about chain manipulation operations? (7M)

5. a) Create binary search tree for the following elements ( 23, 12, 45, 36, 5, 15, 39, (7M)
2, 19) ? Discuss about the height of the above binary search tree?
b) What is a threaded binary tree? Give an example with neat diagram of inorder (7M)
traversal of threaded binary tree

6. a) Explain Kruskal Algorithm? (7M)

b) With an example explain Single Source shortest path algorithm? (7M)

7. a) Write a C++ program to sort the following elements using Quick Sort? (7M)
b) Trace the above program for the following elements? (7M)
66, 5, 45, 36, 65, 15, 39, 66, 56, 55

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Code No: R1621055 R16 SET - 4

II B. Tech I Semester Regular Examinations, October/November - 2017

DATA STRUCTURES THROUGH C++
(Com to CSE & IT)
Time: 3 hours Max. Marks: 70
Note: 1. Question Paper consists of two parts (Part-A and Part-B)
2. Answer ALL the question in Part-A
3. Answer any FOUR Questions from Part-B
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~

PART –A
1. a) Define Sparse matrix? (2M)
b) What are the uses of templates in C++? (2M)
c) With a neat diagram represent 4 elements ( 21, 30, 12, 11) in Circular linked (2M)
list?
d) Can we have a binary tree whose inorder and preorder traversal same? Give (3M)
example?
e) What is an Articulation point? (2M)
f) Give the best case, Average case, Worst case time complexity of Heap sort? (3M)
PART -B
2. a) Differentiate between Constructor and destructor? (7M)
b) Discuss about the Polynomial Addition using Array ADT? (7M)

3. a) Discuss about Stack ADT? (7M)

b) What are container Classes? Explain with a Sample program (7M)

4. a) How chains are represented in C++? (7M)

b) Discuss about Linked Queues? (7M)

5. a) What are the properties of a binary tree? (7M)

b) Write an algorithm to traverse the given binary tree in inorder? Explain with an (7M)
example?

6. a) Explain Prim’s Algorithm? (7M)

b) What is Spanning tree? Explain about Depth first and breadth first Spanning (7M)
trees?

7. a) Write a C++ program to sort the following elements using Heap Sort? (7M)
b) Create Heap for the following elements and then sort them (7M)
( 13, 102, 405, 136, 15, 105, 390, 432, 28, 444 )

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Code No: RT21012 R13 SET - 1

II B. Tech I Semester Supplementary Examinations, Oct/Nov - 2017

PROBABILITY AND STATISTICS
(Civil Engineering)
Time: 3 hours Max. Marks: 70
Note: 1. Question Paper consists of two parts (Part-A and Part-B)
2. Answer ALL the question in Part-A
3. Answer any THREE Questions from Part-B
4. Statistical tables are required
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~
PART – A

1. a) If X is a random variable, then, show that
 +  = 


. 4M
b) Show that mean of the binomial distribution is  . 4M
c) Write a short note on types of sampling. 3M
d) A random sample of 400 flower stems has an average length of 15cms. Can this
be regarded as a sample from a large population with mean 16 cms and standard 4M
deviation 5cms?
e) If  and  are uncorrelated random variables with variances 9 and 4
respectively. Find the correlation coefficient between X + Y and X – Y. 4M
f) What is range chart? Explain. 3M

PART – B

2. a) Assume that the height of clouds above the ground at some location is a (8M)
Gaussian random variable X with  = 1830m and  = 460m. Find the
probability that clouds will be higher than 2750m.give F(2) = 0.9772.

b) If X is a Poisson variate such that 3
 = 4 =
 = 2 +
 = 0 find (8M)

i) the mean of 
ii) P
 ≥ 2

3. a) Derive the moment generating function for the Poisson distribution (8M)
If X1 , X2 , …., Xn is a random sample taken from a finite population, prove that

 =  ∑
 −  is not an unbiased estimatior of the parameter  while


∑
 −  is unbiased
b) Seeds are packed in packets of 20 if is known that 5% do not germinate. (8M)
Determine the number of packets containing
i) at least 2 ii) at most 2 non-germinating seeds in a of consignment 1000
packets.

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Code No: RT21012 R13 SET - 2

4. If  ,  , … … .  is a random sample taken from a finite population, prove that (16M)


 =  ∑
 −  is not an unbiased estimatior of the parameter  while


∑
 −  is unbiased

5. a) a) A survey 320 families with 5 children each revealed the following (8M)
distribution
No. of boys 5 4 3 2 1 0
No. of girls 0 1 2 3 4 5
No. of families 14 56 110 88 40 12
Is the result consistent with the hypothesis that male and female births are
equally probable?
b) Given below is the number of male births in 1000 families having 5 children (8M)

Male children 0 1 2 3 4 5
No. of families 40 300 250 200 30 180
Test whether the given data is consistent with the hypothesis that the chance of
male birth is equal to the chance of female birth

6. Suppose that the two- dimensional random variable
, ! has joint pdf (16M)
 + , 0 <  < 1, 0<<1 ,
"
,  = #
0, &'ℎ)*+)
Obtain the correlation coefficient between  and !

7. An electronic firm produces computer memory chips SQC methods are used to (16M)
monitor the quality of the chips produced. A chip is classified as defective if
any flaw is found that will make the chip unacceptable to the buyer. Set up a p-
chart to monitor the process for 300 chips sampled on each of 20 consecutive
work days. Compute upper and lower limits for monitoring the number of
defects
Defects: 16, 8, 1, 16, 9, 13, 10, 14, 11, 8, 6, 14, 13, 14, 4, 11, 4, 13, 9, 12.

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Code No: RT21023 R13 SET - 1

II B. Tech I Semester Supplementary Examinations, Oct/Nov - 2017

BASIC ELECTRONICS AND DEVICES
(Electrical and Electronics Engineering)
Time: 3 hours Max. Marks: 70
Note: 1. Question Paper consists of two parts (Part-A and Part-B)
2. Answer ALL the question in Part-A
3. Answer any THREE Questions from Part-B
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~

PART –A
1. a) Differentiate diffusion and characteristics. (3M)
b) What are various types of capacitances in a diode? (3M)
c) Define load and line regulations. (4M)
d) What are various modes of operation of a BJT? (4M)
e) Define Transconductance and drain resistances in FET (4M)
f) Compare parameters of different feedback amplifier (4M)
PART -B
2. a) State and derive continuity equation. (8M)
b) Explain the formation and current flow in an N type semiconductor. (8M)

3. a) Explain the VI characteristics of tunnel diode. (12M)

b) Mention different application of a tunnel diode (4M)

4. a) Draw the circuit of a center tapped transformer based Full wave rectifier and (8M)
derive its efficiency expression.
b) Explain the operation of a capacitor filter and derive the expression for ripple (8M)
factor with capacitor filter.

5. a) What is thermal runaway and derive the expression for avoiding thermal (8M)
runaway.
b) Mention different compensation techniques (8M)

6. a) Explain the construction and working of depletion mode MOSFET. (12M)

b) Compare enhancing characteristics MOSFET (4M)

7. a) Explain the operation of Wien bridge oscillator. (8M)

b) Quantitatively prove that with series mixing input impedance increases. (8M)

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Code No: RT21033 R13 SET - 1

II B. Tech I Semester Supplementary Examinations, Oct/Nov - 2017

THERMODYNAMICS
(Com. to ME, AE, AME)
Time: 3 hours Max. Marks: 70
Note: 1. Question Paper consists of two parts (Part-A and Part-B)
2. Answer ALL the question in Part-A
3. Answer any THREE Questions from Part-B
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~

PART –A
1. a) In practice reversible process is not possible explain why? (3M)
b) What is a steady flow process? (3M)
c) State the limitations of first law of thermodynamics. (4M)
d) Why do the isobars on Mollier diagram diverge from one another? (4M)
e) Why do the specific heats of an ideal gas depend only on the atomic structure of (4M)
the gas?
f) What are the four basic components of a steam power plant? (4M)
PART -B
2. a) Show that internal energy is a property of the system. (8M)
b) Calculate the amount of heat required to convert 100 kg of ice at -100C into steam (8M)
at 1000C at normal pressure. Specific heat capacity of ice=2100 J/Kg K, latent
heat of fusion of ice =3.36 x 105 J/Kg, specific heat capacity of water =4.2 kg
K/kg-K and latent heat of vaporization of water = 2.25 x106 J/kg.

3. a) Write the steady flow energy equation for a single stream entering and a single (8M)
stream leaving a control volume and explain the various terms in it.
b) What is Vander wall`s equation of state? What is the significance of the various (8M)
constants involved in the equation?

4. a) Define Claussius inequality and prove it. (7M)

b) An inventor reports that he has developed an engine that operates between the (9M)
temperature limits of 800C and -170C. During the process the engine absorbs 23 x
103 kJ/h of heat and develops 2 kW of power. Show with reason how far his
claim is justified.

5. a) Explain the principle of operation of a throttling calorimeter. (6M)

b) A vessel of volume 1 m3 capacity contains steam at 20 bar and 0.85 dryness (10M)
fraction. Steam is blown off until the pressure drops to 10 bar. The valve is then
closed. Determine the mass of steam blown off. Assume the process as throttling.

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Code No: RT21033 R13 SET - 1

6. a) Express the changes in internal energy and enthalpy of an ideal gas in a reversible (8M)
adiabatic process in terms of the pressure ratio.
b) Atmospheric air at 1 bar and is at 250C DBT and 150C WBT. Calculate (8M)
(i) relative humidity (ii) specific humidity (iii) vapour density in air (iv) DPT
(v) enthalpy of mixture.

7. a) For the same compression ratio and heat rejection, which cycle is most efficient: (6M)
Otto, Diesel or Dual? Explain with
−    − diagrams.
b) In an air standard Diesel cycle, the compression ratio is 16, and at the beginning (10M)
of isentropic compression, the temperature is 150C and the pressure is 0.1 M Pa.
Heat is added until the temperature at the end of the constant pressure process is
14800C. Calculate (i) the cut-off ratio, (ii) the heat supplied per kg of air, (iii) the
cycle efficiency and (iv) the m.e.p.

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Code No: RT21041 R13 SET - 1

II B. Tech I Semester Supplementary Examinations, Oct/Nov - 2017

ELECTRONIC DEVICES AND CIRCUITS
(Com. to ECE, EIE, ECC)
Time: 3 hours Max. Marks: 70
Note: 1. Question Paper consists of two parts (Part-A and Part-B)
2. Answer ALL the question in Part-A
3. Answer any THREE Questions from Part-B
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~
PART –A
1. a) Explain the temperature dependence of V-I characteristics of P-N diode. (3M)
b) List the applications of Varactor diode? (2M)
c) Compare the rectifier and regulator. (2M)
d) Explain the Break down in transistor. (3M)
e) Draw and explain the hybrid model of a CB configuration. (3M)
f) Explain the terms Peak voltage and Valley current in UJT. (2M)
g) Why FET is called a voltage operative device? Explain. (2M)
h) List the advantages and disadvantages of fixed bias method. (2M)
i) Compare all the transistor amplifiers. (3M)
PART -B
2. a) Show that the Fermi energy level lies in the center of forbidden energy band for (10M)
an intrinsic semiconductor.
b) Find the concentration of holes and electrons in a p-type silicon at 300K (6M)
assuming resistivity as 0.02Ω-cm. Assume µ p = 475m2/V-sec,
ni= 1.45X1010/cm3.

3. a) Explain the construction and working of varactor diode? (10M)

b) The energy gap of Si is 1.1 ev. Its electron and hole mobilities at room (6M)
temperatures are 0.15 and 0.06 m2/V sec respectively. Evaluate its conductivity.

4. a) Derive the expression for Ripple factor for full wave rectifier with L-section (8M)
filter. Explain the necessity of bleeder resistor
b) A sinusoidal voltage whose Vm=24V is applied to half wave rectifier. The diode (8M)
may be considered to be ideal and RL=1.8KΩ is connected as load. Find out
peak value of current, RMS value of current, DC value of current and ripple
factor.

5. a) Explain the working principle of MOSFET in enhancement and depletion (9M)

modes.
b) The reverse saturation current of the Ge transistor is 2µA at room temperature of (7M)
250C and increases by a factor of 2 for each temperature increase of 100C. Find
the reverse saturation current of the transistor at a temperature of 750C.

6. a) Compare h-parameters with Y-parameters and explain. (8M)

b) Design a collector to base bias circuit for the specified conditions: Vcc=15V, (8M)
VCE=5V, ICE=5mA, and β=100.

7. a) Compare CB and CC amplifiers (8M)

b) Analyze CS-FET amplifier (8M)
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Code No: RT21051 R13 SET - 1
II B. Tech I Semester Supplementary Examinations, Oct/Nov - 2017
OBJECT ORIENTED PROGRAMMING THROUGH C + +
(Com. to CSE, IT)
Time: 3 hours Max. Marks: 70
Note: 1. Question Paper consists of two parts (Part-A and Part-B)
2. Answer ALL the question in Part-A
3. Answer any THREE Questions from Part-B
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~

PART –A

1. a) What are the advantages of OOPs through C++ (4M)

b) Explain the principles of function overloading (3M)
c) Explain the properties of friend functions (4M)
d) What is anonymous object (3M)
e) What are the rules for virtual functions (4M)
f) Distinguish between template and macro (4M)

PART –B

2. a) Describe about the console I/O operations (10M)

b) Explain the peek( ) and ignore( ) functions with a example (6M)

3. a) Explain about the memory management operators (8M)

b) Write a program to find the area of rectangle, triangle and sphere by using (8M)
function overloading

4. a) Distinguish between call by value and call by address with an example (8M)
b) Write a program to exchange values between two classes using friend classes (8M)

5. a) Explain the different types of constructors with an example (8M)

b) Write a program to overload + binary operator for complex numbers (8M)

6. a) What is inheritance? Explain the different types of inheritances used in C++ (8M)
b) Write a program to define virtual, non virtual functions and determine size of (8M)
the object

7. a) WAP that includes a try block and a catch clause which processes the (8M)
arithmetic exception generated by division-by-zero error
b) Explain about the sequential and random access file operations (8M)

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Code No: R21013 R10 SET - 1

II B. Tech I Semester Supplementary Examinations, Oct/Nov - 2017

ELECTRICAL AND ELECTRONICS ENGINEERING
(Com. to CE, ME, CHEM, PE, AME, MM)
Time: 3 hours Max. Marks: 75
Answer any FIVE Questions
All Questions carry Equal Marks
~~~~~~~~~~~~~~~~~~~~~~~~~~

1. a) Explain the voltage and current relations in star connection? (8M)

b) Two ammeters x and y are connected in series and a current of 25A flows (7M)
through them. The potential differences across the ammeters are 0.3V and 0.4V
respectively. Find how the same current will divide between x and y when they
are connected in parallel?

2. a) Draw a neat sketch of a dc generator. State the function of each part? (8M)
b) Derive the torque and emf equation for a dc motor? (7M)

3. a) Describe the operation of a single phase transformer, explaining clearly the (8M)
functions of the different parts?
b) A 50KVA single phase transformer has iron losses of 750W and copper loss of (7M)
1040W when supplying its full load at unity power factor. Calculate the
efficiency of the transformer at unity power factor at full load and half load?

4. a) Explain the synchronous impedance method of determining the voltage (8M)

regulation of an alternator.
b) Draw a typical torque slip characteristics and deduce the condition for maximum (7M)
torque.

5. a) Explain how a P-N unction diode acts as a rectifier. (8M)

b) Explain the concept of bridge rectifier with circuit diagram. (7M)

6. a) Explain the mechanism of current flow in a PNP transistor. (8M)

b) In a NPN silicon transistor α=0.895,IE=8mA and leakage current ICBO(for (7M)
ICO)=0.3µA,determine ICEO.?

7. a) What are the factors which limit the choice of frequency in Induction Heating? (8M)
b) What is dielectric heating? How is this different from induction heating? (7M)

8. a) Explain the principle of operation of strain gauge with a neat sketch? (8M)
b) Explain the principle of operation of CRO with neat sketch? (7M)

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Code No: R21023 R10 SET - 1

II B. Tech I Semester Supplementary Examinations, Oct/Nov - 2017

ELECTRICAL CIRCUIT ANALYSIS - I
(Electrical and Electronics Engineering)
Time: 3 hours Max. Marks: 75
Answer any FIVE Questions
All Questions carry Equal Marks
~~~~~~~~~~~~~~~~~~~~~~~~~

1. a) Differentiate between ideal sources and practical sources and also explain about (8M)
independent and dependent sources.
b) Find the current I, and the voltage across 30 Ω (7M)

2. a) State and explain Kirchhoff’s laws (7M)

b) Calculate the current passing through 6Ω resistor for the following circuit using (8M)
node analysis

3. a) Explain the response of series RLC circuit for a sinusoidal current source and also (7M)
draw its phasor diagram
b) In a series RC circuit, the values of R = 10Ω and C = 25nF. A sinusoidal voltage (8M)
of 50 MHz is applied and the maximum voltage across the capacitance is 2.5 V.
Find the maximum voltage across the series combination.

4. A choke coil is connected across a 250 V, 50 Hz supply. If the input current is 10 (15M)
A and power loss in the choke is 1 KW, find the impedance, resistance and
inductance of the choke. What is the power factor of the circuit? What would be
the value of the input current if a capacitor of C farad is connected in series with
the coil such that the power factor of the entire circuit becomes unity?

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Code No: R21023 R10 SET - 1

5. a) List the analogy between Electrical and magnetic circuits. (7M)

b) For the following figure , find the drop across the capacitor and the resistor (8M)

6. Define the following terms with respect to Graph theory: (15M)

i) Branch, ii) Tree, iii) Node, iv) Tree link, v) Cut-set, vi) Tie – set,
and vii) Incidence matrix

7. a) State and explain Superposition theorem (7M)

b) Find the power loss in the 10Ω resistor for the circuit shown below using (8M)
Norton’s theorem

8. Using Thevinin’s theorem find the power in (4 +j6) Ω impedance connected (15M)
across terminals x-y for the figure shown below:

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Code No: R21052 R10 SET - 1
II B. Tech I Semester Supplementary Examinations, Oct/Nov - 2017
PROBABILITY AND STATISTICS
(Com. to CSE, IT)
Time: 3 hours Max. Marks: 75
Answer any FIVE Questions
All Questions carry Equal Marks
~~~~~~~~~~~~~~~~~~~~~~~~~

1. a) A class had 10 boys and 5 girls. Three students are selected at random one after (8M)
the other. Find the probability that
i) first two are boys and third is girl
ii) first and third of same sex and second is of opposite sex.
b) A and B throw alternatively a pair of ordinary dice. A wins if he throws 6 before 7 (7M)
and B wins if he throws 7 before A throws 6. If A begins, show that his chance of
winning is 30/61.

2. Probability density function of a random variable X is (15M)



, 0 ≤  ≤ 

 =  . Find the mean, mode and median of the distribution.
0,  ℎ

3. a) The marks obtained in mathematics by 1000 students is normally distributed with (8M)
mean 78% and standard deviation 11%. Determine
i) What was the highest mark obtained by the lowest 25% students?
ii) Within what limit did the middle 90% of the student lie?
b) A student takes a true false examination consisting of 8 questions. He guesses each (7M)
answer. Find the smallest value of n that the probability of guessing atleast n
correct answers is less than ½.

4. a) Take 30 slips of paper and label 5 each -4 and 4, four each -3 and 3, three each -2 (8M)
and 2, 2 each -1, 0 and 1. If each slip of paper has the same probability of being
drawn find the probability of getting -4, -3, -2, -1, 0, 1, 2, 3, 4 and find the mean
and variance of this distribution.
b) The mean of certain normal population is equal to the standard error of the mean (7M)
of the samples of 64 from that distribution. Find the probability that the mean of
the sample size 36 will be negative?
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Code No: R21052 R10 SET - 1

5. a) Discuss various types of alternative hypothesis with suitable example. (8M)

b) A machine runs on an average of 125 hours/year. A random sample of 49 (7M)
machines has an annual average use of 126.9 hours with standard deviation 8.4
hours. Does this suggest believing that machines are used on the average more
than 125 hours annually at 0.05 level of significance?

6. a) Under quality improvement programme some teachers are trained by instruction (8M)
methodology A and some by methodology B. In a random sample of size 10,
taken from a large group of teachers exposed to each of these two methods, the
following marks are obtained in an appropriate achievement test
Method A 65 69 73 71 75 66 71 68 68 74
Method B 78 69 72 77 84 70 73 77 75 65
Assuming that populations sampled are approximately normally distributed has
same variance. Test the claim that method B is more effective at 0.05 LOS.
b) Explain steps involved in computation of one-way Analysis of Variance? (7M)

7. a) Find the rank correlation for the following marks obtained by 12 students in (8M)
Mathematics and Statistics
Mathematics 78 56 36 66 25 75 82 62
Statistics 84 44 57 58 60 68 62 58
b) What are the various techniques used for statistical quality control. (7M)

8. a) Define the terms (8M)

i) expected queue length
ii) ideal period
iii) Busy period
iv) Mean service rate
b) Show that for a single service station, Poisson arrivals and exponential service (7M)
time, the probability that exactly n calling units are in the queuing system is Pn =
(1-ρ)ρn, n≥0, where ρ is the traffic intensity.

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