AO4620

Complementary Enhancement Mode Field Effect Transistor

General Description Features
The AO4620 uses advanced trench technology n-channel p-channel
MOSFETs to provide excellent RDS(ON) and low gate VDS (V) = 30V -30V
charge. The complementary MOSFETs may be used ID = 7.2A (VGS=10V) -5.3A (VGS = -10V)
in inverter and other applications. RDS(ON) RDS(ON)
< 24mΩ (VGS=10V) < 32mΩ (VGS = -10V)
< 36mΩ (VGS=4.5V) < 55mΩ (VGS = -4.5V)

100% UIS tested

100% Rg tested

SOIC-8
Top View Bottom View
Top View D2 D1
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
G2 G1
S2 S1

Pin1 n-channel p-channel

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Max n-channel Max p-channel Units
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS ±20 ±20 V
Continuous Drain TA=25°C 7.2 -5.3
Current F TA=70°C ID 6.2 -4.5 A
B
Pulsed Drain Current IDM 64 -40
TA=25°C 2 2
F
PD W
Power Dissipation TA=70°C 1.44 1.44
B
Avalanche Current IAR 9 17 A
B
Repetitive avalanche energy 0.3mH EAR 12 43 mJ
Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150 °C

Thermal Characteristics: n-channel and p-channel

Parameter Symbol Device Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s n-ch 50 62.5 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State n-ch 80 100 °C/W
Maximum Junction-to-Lead C Steady-State RθJL n-ch 32 40 °C/W
A
Maximum Junction-to-Ambient t ≤ 10s p-ch 50 62.5 °C/W
A RθJA
Maximum Junction-to-Ambient Steady-State p-ch 80 100 °C/W
Maximum Junction-to-Lead C Steady-State RθJL p-ch 32 40 °C/W

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4620

N-CHANNEL Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 2.1 2.6 V
ID(ON) On state drain current VGS=10V, VDS=5V 64 A
VGS=10V, ID=7.2A 17.7 24
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 25 32
VGS=4.5V, ID=5A 24.8 36 mΩ
gFS Forward Transconductance VDS=5V, ID=7.2A 20 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.74 1 V
IS Maximum Body-Diode Continuous Current 2.5 A
ISM Pulsed Body-Diode CurrentB 64 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 373 448 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 67 pF
Crss Reverse Transfer Capacitance 41 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.8 2.8 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 7.2 11 nC
Qg(4.5V) Total Gate Charge 3.5 nC
VGS=10V, VDS=15V, ID=7.2A
Qgs Gate Source Charge 1.3 nC
Qgd Gate Drain Charge 1.7 nC
tD(on) Turn-On DelayTime 4.5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=2.1Ω, 2.7 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 14.9 ns
tf Turn-Off Fall Time 2.9 ns
trr Body Diode Reverse Recovery Time IF=7.2A, dI/dt=100A/µs 10.5 12.6 ns
Qrr Body Diode Reverse Recovery Charge IF=7.2A, dI/dt=100A/µs 4.5 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F.The power dissipation and current rating are based on the t ≤ 10s thermal resistance rating.
Rev 8: May 2012

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4620

N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 15
5V
10V 6V VDS=5V
50
12 VDS=5V

40
6V 9
4.5V
ID (A)

ID(A)
30
6
20 VGS=3.5V 125°C 125°C 25°C
3
10 25°

0 0
0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 4.5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

45 1.8

40
Normalized On-Resistance

VGS=4.5V 1.6 VGS=10V

Id=7.7A
35
VGS=4.5V 1.4
Ω)
RDS(ON) (mΩ

30
1.2
25

VGS=10V
VGS=10V 1
20 VGS=4.5V
Id=5A
15 0.8

10 0.6
0 5 10 15 20 0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage

60 1.0E+01
ID=7.2A ID=7.7A
50 1.0E+00

1.0E-01
Ω)

40
RDS(ON) (mΩ

125°C
IS (A)

125°C 125°
1.0E-02
30
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
1.0E-03
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY25°C
LIABILITY ARISING
OUT OF20
SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
25°C 1.0E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25°C
10
1.0E-05
2 4 6 8 10
0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts)
Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

AO4620

N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 600
VDSV=15V
DS=15V
ID=7.2A
ID=7.7A 500
8
Ciss

Capacitance (pF)
400
VGS (Volts)

6
300
4
Coss
200
Coss
2
100
Crss
0 Crss
0
0 2 4 6 8 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 30
10µs TJ(Max)=150°C
RDS(ON) 25 TA=25°C
10.0
limited
20
Power (W)

100µs
ID (Amps)

1.0 1ms 15
10ms
10
0.1s
0.1 TJ(Max)=150°C DC
TA=25°C 10s 5

0
0.0
0.001 0.01 0.1 1 10 100 1000
0.01 0.1 1 10 100 Pulse Width (s)
VDS (Volts) Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

RθJA=100°C/W
Thermal Resistance

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS
0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Single Pulse

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

AO4620

P-CHANNEL Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V
VDS=-30V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.3 -1.85 -2.4 V
ID(ON) On state drain current VGS=-10V, VDS=-5V -40 A
VGS=-10V, ID=-5.3A 23 32
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 31.5
VGS=-4.5V, ID=-4.5A 33 55 mΩ
gFS Forward Transconductance VDS=-5V, ID=-5.3A 19 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.8 -1 V
IS Maximum Body-Diode Continuous Current -3.5 A
ISM Pulsed Body-Diode CurrentB -40 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 760 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 140 pF
Crss Reverse Transfer Capacitance 95 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 3.2 5 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V) 13.6 16 nC
Qg(4.5V) Total Gate Charge (4.5V) 6.7 nC
VGS=-10V, VDS=-15V, ID=-5.3A
Qgs Gate Source Charge 2.5 nC
Qgd Gate Drain Charge 3.2 nC
tD(on) Turn-On DelayTime 8 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=2.8Ω, 6 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 17 ns
tf Turn-Off Fall Time 5 ns
trr Body Diode Reverse Recovery Time IF=-5.3A, dI/dt=100A/µs 15 ns
Qrr Body Diode Reverse Recovery Charge IF=-5.3A, dI/dt=100A/µs 9.7 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The SOA curve provides a single pulse rating.
F.The current rating is based on the t ≤ 10s thermal resistance rating.
Rev8: May 2012

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AO4620

P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

40 30
-10V -6V -5V -4.5V VDS=-5V
35
25
30
-4V
20
25
-ID (A)

-ID(A)
20 15

15 -3.5V
10
10 125°C
5 25°C
5 VGS=-3V

0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4 4.5 5
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

50 VGS=-4.5V 1.8
45 VGS=-10V
Normalized On-Resistance

VGS=-4.5V 1.6 ID=-5.3A

40
ID=-4.5A
Ω)

35
RDS(ON) (mΩ

1.4
30
ID=-5.6A
VGS=-4.5V
25 1.2
ID=-4.5A
20 VGS=-10V
1
15 VGS=-10V

10 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
-ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage

80 1.0E+02
ID=-5.6A
ID=-5.3A
1.0E+01
60 125°C 1.0E+00
125°C
25°C
Ω)

125°C
RDS(ON) (mΩ

1.0E-01
-IS (A)

40
1.0E-02
25°C
1.0E-03
20
25°C
1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

AO4620

P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1200

VDS=-15V 1000
8 ID=-5.3A
Ciss

Capacitance (pF)
800
-VGS (Volts)

6
600
4
400
Coss
2
200

Crss
0 0
0 2 46 8 10 12 14 0 5 10 15 20 25 30
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
100.0
10µs 30

100µs 25
10.0 TJ(Max)=150°C
Power (W)

RDS(ON) 20 TA=25°C
ID (Amps)

limited 0.1s 1ms

1.0 15
10s 10ms
10
DC
0.1
5
TJ(Max)=150°C
TA=25°C 0
0.0 0.001 0.01 0.1 1 10 100
0.01 0.1 1 10 100
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Figure 10: Single Pulse Power Rating Junction-to-
Safe Operating Area (Note E) Ambient (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

RθJA=100°C/W
Thermal Resistance

PD
0.1
Ton
T

Single Pulse
0.01
0.00001 0.0001 0.001 0.01 Pulse Width
0.1 (s) 1 10 100 1000
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.