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2C2222A
Mechanical Specifications
Top Al - 24 kÅ min.
Metallization
Backside Au - 6.5 kÅ nom.
Emitter 4.0 mils x 4.0 mils
Bonding Pad Size
Base 4.0 mils x 4.0 mils
Die Thickness 8 mils nominal
Chip Area 20 mils x 20 mils
Top Surface Silox Passivated
Electrical Characteristics
TA = 25oC
Parameter Test conditions Min Max Unit
BVCEO IC = 10 mA, IB = 0 40 --- V dc
BVCBO IC = 10 µA, IE = 0 75 --- V dc
BVEBO IE = 10 µA, IC = 0 6.0 --- V dc
ICBO VCB = 50 V, IE = 0 --- 10 nA dc
hFE IC = 150 mA dc, VCE = 10 V 100 300 ---
Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less
than 300 µs, duty cycle less than 2%.
This datasheet has been downloaded from:
www.DatasheetCatalog.com