Академический Документы
Профессиональный Документы
Культура Документы
NSE – 847
Essentials of NEMS/MEMS
Course Instructor: Dr. Amna Safdar
Lecture#15-16 10/04/2020 1
SMM
Lecture#15-16 10/04/2020 2
What is for Today?
Lecture#15-16 10/04/2020 3
Surface micromachining and Process flow part 1
Identify the basic steps of a generic surface
micromachining process Define the terms
Identify the critical requirements needed to create a Structural layer/material
MEMS using surface micromachining Sacrificial layer/material,
List common structural material/sacrificial Release, and
material/etchant combinations used in surface Die separation
micromachining Develop a basic-level process flow for creating a simple
Compare and contrast the relative merits of wet MEMS device
micromachining versus dry micromachining
Explain the phenomenon of stiction, why it occurs, and
methods for avoiding it
Describe the process of lift-off
Explain what is meant by packaging and describe the
ways in which it present major challenges in MEMS
Lecture#15-16 10/04/2020 4
Lecture#15-16 10/04/2020 5
Review of surface micromachining process
Surface micromachining example –
Creating a cantilever
Deposit poly-Si (structural layer)
Remove sacrificial
Etch part of layer (release)
the layer.
Often the most critical
Silicon wafer
Lecture#15-16 10/04/2020 6
History and processes The hinge design allows for out-of-plane motion of the
mirror.
Lecture#15-16 10/04/2020 7
Requirements of Material
Lecture#15-16 10/04/2020 8
Requirements and advantages
• Three to four different materials required in
addition to the substrate Rs >> Rm > Ri
o Sacrificial material (etch rate Rs)
o Structural mechanical material (etch rate Rm) Best results are obtained when
o Sometimes electrical isolators and/or structural materials are deposited with
insulation materials (etch rate Ri) good step coverage.
For example, buffered oxide etch (BOE) is used to remove
• Many SMM processes are compatible with CMOSSiO2 sacrificial layersChemical
whenvapor deposition
polysilicon (CVD)
is the structural
(complementary metal oxide silicon) technology material. In this case oxide is etchedorat a rate of about 100
used in microelectronics fabrication. nm/min while polysilicon is etched at a rate of only 0.04
Physical vapor deposition (PVD)
nm/min.
• Can more easily integrate with their control
electronics on the same chip
• Many SMM processes have developed their own If PVD
sets of standards Sputtering
or
efficient and inexpensive Evaporation
Lecture#15-16 10/04/2020 9
Common material/etchant combinations for surface μ-
machining
Lecture#15-16 10/04/2020 10
In surface micromachining methods best results are
obtained when structural materials are deposited with good
step coverage.
• Hence chemical vapor deposition (CVD) methods are
preferred over PVD.
• When PVD methods are employed, sputtering is
preferred over evaporation.
Lecture#15-16 10/04/2020 11
Problems and issues with SMM
Wet etching Dry etching
• 40 years of experience and data in the • Better resolution than wet etching
semiconductor industry
• Ability to remove surface contaminants • More directionality (High aspect ratios )
Stiction
moisture
Lecture#15-16 10/04/2020 12
Stiction
Stiction = static + friction
Lecture#15-16 10/04/2020 13
Problems and issues
Lecture#15-16 10/04/2020 16
Process integration a step-by-step set of instructions to fabricate a device
Not only must we be able to choose the materials and processes to fabricate
a MEMS, but we must also be able to put them in the correct order. A list of
all these necessary fabrication steps in sequential order is called a process
flow.
Lecture#15-16 10/04/2020 17
Typical process steps for surface micromachining
• modeling and simulation
• design a layout
• design a mask set
C
packaging
Lecture#15-16 10/04/2020 18
Die separation and packaging
• Must separate the individual devices
• Often saw or scribe the wafer
packaging
Lecture#15-16 10/04/2020 20
More on packaging
Lecture#15-16 10/04/2020 21