Title: An Optimal Charging/Discharging Strategy for Smart Electrical Car Parks

First author name: Tingting He

Publishing journal name:

Chinese Journal of Electrical Engineering

year of publication: June 2018

Issue number: 2

Volume: 4

Page no: 28 - 35

Discussion: A smart electric car park model is proposed and is able to buy or sell electricity in the form of
active or reactive power from main grid to improve quality. It involves bidirectional flow of power from
vehicle to grid, grid to vehicle and new V4G operation achieve the bidirectional reactive power flow. EVs
discharge the power to grid during the peak hours to balance the loads. Simulation of this model with
optimal charging and discharging scheme is done in MATLAB using real world parking information.
Simulation result shows increase the profit of car park owner by 300% and minimizing the cost for EV
costumer by 47%.

Title: InGaN-Based High-Power Flip-Chip LEDs With Deep-Hole-Patterned Sapphire Substrate by

Laser Direct Beam Drilling

First author name: Jae-Hoon Lee

Publishing journal name: IEEE Electron Device Letters

year of publication: July 2010

Issue number: 7

Volume: 31

Page no: 698 – 700

Discussion: An InGaN based Flip-chip LED is manufactured using deep hole patterned
sapphire through the technique of laser direct beam drilling while maintaining electrical
characteristics of the device. The output power of this LED at 350ma current is 145mw
which is 19% enhancement in power compared to the reference high brightness GAN
based LED. It also incorporates increase in extraction efficiency resulting from increase in
photon escape probability due to enhanced light scattering at the deep hole pattern.
Title: Modeling 20-nm Germanium FinFET With the Industry Standard FinFET Model

First author name: Sourabh Khandelwal 

Publishing journal name: IEEE Electron Device Letters

year of publication: July 2014

Issue number: 7

Volume: 36

Page no: 711 – 713

Discussion:
A p-type Germanium FinFET is modeled using the industry standard Berkeley Spice
Common Multi-gate Field Effect Transistor (BSIM-CMG). The perpendicular field
dependence of hole mobility is found to be different to silicon mosfet. A mobility model
appropriate for Ge is presented which describe the measured I-V data much better than
silicon mobility model and updated Ge hole mobility equation is presented. The industry
standard FinFET model agrees with the measured Ge p-FinFET data for multiple gate
length devices from L=130nm to L=20nm and width=70nm. This shows BSIM-CMG is ready
to use in circuit design with Ge p-FinFET