B25-28

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:
PACKAGE STYLE .380" 4L STUD
The B25-28 is Designed for VHF .112x45° A
Class C Power Amplifier Applications
up to 250 MHz. B
C

E E
FEATURES: ØC
B
• PG = 10 dB Typical at 25 W/175 MHz
• ∞ Load VSWR at Rated Conditions D H I

• Omnigold™ Metallization System G

J

#8-32 UNC-2A
F
E
MAXIMUM RATINGS
DIM MINIMUM MAXIMUM
IC 4.0 A inches / mm inches / mm

A .220 / 5.59 .230 / 5.84

VCB 65 V B
C
.980 / 24.89
.370 / 9.40 .385 / 9.78
O D .004 / 0.10 .007 / 0.18
PDISS 40 W @ TC = 25 C E .320 / 8.13 .330 / 8.38
F .100 / 2.54 .130 / 3.30
O O
TJ -55 C to +200 C G .450 / 11.43 .490 / 12.45
H .090 / 2.29 .100 / 2.54
O O
TSTG -55 C to +150 C I
J
.155 / 3.94 .175 / 4.45
.750 / 19.05

O
θJC 4.4 C/W ORDER CODE: ASI10803

CHARACTERISTICS TC = 25 C
O

SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

BVCBO IC = 200 mA 65 V
BVCEO IC = 200 mA 35 V
BVEBO IE = 10 mA 4.0 V
ICBO VCB = 30 V 2.0 mA
hFE VCE = 5.0 V IC = 200 mA 10 ---

Cob VCB = 28 V f = 1.0 MHz 50 pF

PG 8.5 10 dB
VCE = 28 V POUT = 25 W f = 175 MHz
ηc 50 60 %

A D V A N C E D S E M I C O N D U C T O R, I N C. REV.A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.