NSM80101MT1G

NPN Transistor with Dual

Series Switching Diode
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications http://onsemi.com
• LCD Control Board
• High Speed Switching NPN Transistor with Dual Series
• High Voltage Switching Switching Diode
MAXIMUM RATINGS − PNP TRANSISTOR
Rating Symbol Value Unit
Collector −Emitter Voltage VCEO 80 Vdc 6 5 4

Collector −Base Voltage VCBO 80 Vdc D1 D2

Emitter −Base Voltage VEBO 6.0 Vdc Q1

Collector Current − Continuous IC 500 mAdc

MAXIMUM RATINGS − SWITCHING DIODE 1 2 3

Rating Symbol Value Unit

Reverse Voltage VR 100 V
Forward Current IF 200 mA 4
6 5
Non−Repetitive Peak Forward Current IFSM A SC−74
(Square Wave, TJ = 25°C prior to 3 CASE 318F
surge) t < 1 sec 1.0 1 2
t = 1 msec 20
Operating and Storage Junction TJ, Tstg −55 to +150 °C
Temperature Range
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
3NP MG
ESD RATINGS G
Rating Class Value
Electrostatic Discharge HBM 3A 4000 V ≤ Failure < 8000 V
3NP = Device Code
MM M4 Failure > 400 V
M = Date Code*
G = Pb−Free Package
THERMAL CHARACTERISTICS
Rating Symbol Max Unit (Note: Microdot may be in either location)
*Date Code orientation may vary depending
Total Device Dissipation FR−5 Board, PD upon manufacturing location.
(Note 1) @ TA = 25°C 400 mW
Derate above 25°C mW/°C
Thermal Resistance from RqJA 313 °C/W ORDERING INFORMATION
Junction−to−Ambient (Note 1)
Device Package Shipping†
Total Device Dissipation FR−5 Board PD
(Note 2) TA = 25°C 270 mW NSM80101MT1G SC−74 3000 /
Derate above 25°C mW/°C (Pb−Free) Tape & Reel
Thermal Resistance, RqJA 463 °C/W †For information on tape and reel specifications,
Junction−to−Ambient (Note 2) including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Junction and Storage TJ, Tstg −55 to +150 °C Brochure, BRD8011/D.
Temperature Range
1. FR−5 = 650 mm2 pad, 2.0 oz Cu.
2. FR−5 = 10 mm2 pad, 2.0 oz Cu.

© Semiconductor Components Industries, LLC, 2013 1 Publication Order Number:

December, 2013 − Rev. 3 NSM80101M/D
 NSM80101MT1G

Q1: NPN TRANSISTOR

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3) V(BR)CEO V
(IC = 1.0 mA, IB = 0) 80 −

Emitter −Base Breakdown Voltage V(BR)EBO V

(IE = 100 mA, IC = 0) 6.0 −

Collector Cutoff Current ICES mA

(VCE = 60 V, IB = 0) − 0.1

Collector Cutoff Current ICBO mA

(VCB = 80 V, IE = 0) − 0.1

ON CHARACTERISTICS (Note 3)
DC Current Gain hFE −
(IC = 10 mA, VCE = 1.0 V) 120 −

Collector −Emitter Saturation Voltage VCE(sat) V

(IC = 100 mA, IB = 10 mA) − 0.3

Base −Emitter Saturation Voltage VBE(sat) V

(IC = 10 mA, VCE = 5.0 Vdc) − 1.2

SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product fT MHz
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz) 150 −

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

D1, D2: SWITCHING DIODE (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage V(BR) 75 − V
Reverse Voltage Leakage Current IR mA
(VR = 75 V) − 1.0
(VR = 20 V, TJ = 150°C) − 30
(VR = 75 V, TJ = 150°C) − 100
Diode Capacitance CD pF
(VR = 0 V, f = 1.0 MHz) − 2.0

Forward Voltage VF mV
(IF = 1.0 mA) − 715
(IF = 10 mA) − 855
(IF = 50 mA) − 1000
(IF = 150 mA) − 1250
Reverse Recovery Time trr ns
(IF = IR = 10 mA, iR(REC) = 1.0 mA, RL = 100 W) − 6.0

Forward Recovery Voltage VFR V

(IF = 10 mA, tr = 20 ns) − 1.75
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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 NSM80101MT1G

TYPICAL CHARACTERISTICS
f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)

300 80
TJ = 25°C
VCE = 2.0 V 60
200 TJ = 25°C
40

C, CAPACITANCE (pF)
Cibo
100 20

70
10
8.0
50
6.0 Cobo

30 4.0
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)

Figure 1. Current−Gain — Bandwidth Product Figure 2. Capacitance

1.0 k 400
700
TJ = 125°C
500
ts VCE = 1.0 V
300
200
h FE , DC CURRENT GAIN

200 25°C
t, TIME (ns)

100 -55°C
70 tf 100
50
VCC = 40 V 80
30 IC/IB = 10 tr
60
20 IB1 = IB2
TJ = 25°C td @ VBE(off) = 0.5 V
10 40
5.0 7.0 10 20 30 50 70 100 200 300 500 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 3. Switching Time Figure 4. DC Current Gain

1 1.1
IC/IB = 10
VCE(sat), COLLECTOR−EMITTER

1.0
IC/IB = 10
SATURATION VOLTAGE (V)

SATURATION VOLTAGE (V)

VBE(sat), BASE−EMITTER

0.9
150°C
0.8 −55°C
25°C
−55°C 0.7
0.1 25°C
0.6
0.5

0.4
150°C
0.3
0.01 0.2
0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 5. Collector Emitter Saturation Voltage Figure 6. Base Emitter Saturation Voltage vs.
vs. Collector Current Collector Current

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 NSM80101MT1G

TYPICAL CHARACTERISTICS

1.2

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.0
VBE(on), BASE−EMITTER VOLTAGE (V)

1.1 VCE = 1 V TJ = 25°C

1.0 0.8
IC = IC = IC = IC =
0.9
−55°C 50 mA 100 mA 250 mA 500 mA
0.8 0.6
0.7 25°C
0.6 0.4
0.5 IC =
0.4 150°C 0.2 10 mA
0.3
0.2 0
0.0001 0.001 0.01 0.1 1 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA)
Figure 7. Base Emitter Voltage vs. Collector Figure 8. Collector Saturation Region
Current

-0.8 1
R qVB , TEMPERATURE COEFFICIENT (mV/ °C)

1S 1 mS
IC, COLLECTOR CURRENT (A)

-1.2
100 mS
0.1 10 mS
-1.6

-2.0 RqVB for VBE Thermal Limit

0.01

-2.4

-2.8 0.001
0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 1 10 100
IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 10. Safe Operating Area
Figure 9. Base−Emitter Temperature
Coefficient

400
PD, POWER DISSIPATION (mW)

300

200

100

0
0 20 40 60 80 100 120 140 160
TEMPERATURE (°C)

Figure 11. Operating Temperature Derating

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 NSM80101MT1G

TYPICAL CHARACTERISTICS

1000 100

TA = 150°C
IF, FORWARD CURRENT (mA)

IR, REVERSE CURRENT (mA)

10
100 TA = 150°C TA = 125°C
TA = 125°C
1.0
TA = 85°C TA = 85°C
10
TA = 55°C 0.1 TA = 55°C
TA = 25°C
1
TA = −40°C 0.01 TA = 25°C

TA = −55°C
0.1 0.001
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 10 20 30 40 50 60 70
VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)
Figure 12. Forward Voltage Figure 13. Leakage Current

0.61 100

0.59 VR, DC REVERSE VOLTAGE (V)

Cd, DIODE CAPACITANCE (pF)

0.57 75

0.55

0.53 50

0.51

0.49 25

0.47

0.45 0
0 1 2 3 4 5 6 7 8 0 25 50 75 100 125 150 175
VR, REVERSE VOLTAGE (V) TA, DERATED AMBIENT TEMPERATURE (°C)
Figure 14. Capacitance Figure 15. Diode Power Dissipation Curve

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 NSM80101MT1G

PACKAGE DIMENSIONS

SC−74
CASE 318F−05
ISSUE N

D NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
6 5 4 THICKNESS OF BASE MATERIAL.
E 4. 318F−01, −02, −03 OBSOLETE. NEW STANDARD 318F−04.
HE
1 2 3
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
A 0.90 1.00 1.10 0.035 0.039 0.043
b A1 0.01 0.06 0.10 0.001 0.002 0.004
b 0.25 0.37 0.50 0.010 0.015 0.020
e c 0.10 0.18 0.26 0.004 0.007 0.010
D 2.90 3.00 3.10 0.114 0.118 0.122
E 1.30 1.50 1.70 0.051 0.059 0.067
q e 0.85 0.95 1.05 0.034 0.037 0.041
C L 0.20 0.40 0.60 0.008 0.016 0.024
0.05 (0.002) A HE 2.50 2.75 3.00 0.099 0.108 0.118
q 0° − 10° 0° − 10°
L
A1

SOLDERING FOOTPRINT*
2.4
0.094

0.95
1.9 0.037
0.074
0.95
0.7 0.037
0.028

1.0
0.039 SCALE 10:1 ǒinches
mm Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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