Академический Документы
Профессиональный Документы
Культура Документы
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
1 base
2 collector
b
3 emitter
case isolated
1 2 3 e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V
VCEO Collector-emitter voltage (open base) - 700 V
IC Collector current (DC) - 8 A
ICM Collector current peak value - 15 A
IB Base current (DC) - 4 A
IBM Base current peak value - 6 A
-IB(AV) Reverse base current average over any 20 ms period - 100 mA
-IBM Reverse base current peak value 1 - 5 A
Ptot Total power dissipation Ths ≤ 25 ˚C - 35 W
Tstg Storage temperature -65 150 ˚C
Tj Junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-hs Junction to heatsink with heatsink compound - 3.6 K/W
Rth j-a Junction to ambient in free air 55 - K/W
1 Turn-off current.
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
2
ICES Collector cut-off current VBE = 0 V; VCE = VCESMmax - - 1.0 mA
ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA
Tj = 125 ˚C
IEBO Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 1.0 mA
BVEBO Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V
VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 700 - - V
L = 25 mH
VCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.1 A - - 1.0 V
V
VBEsat Base-emitter saturation voltage IC = 4.5 A; IB = 1.7 A - - 1.1 V
hFE DC current gain IC = 100 mA; VCE = 5 V - 13 -
hFE IC = 4.5 A; VCE = 1 V 4.0 5.5 7.0
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 80 - pF
Switching times (line deflection ICM = 4.5 A; IB(end) = 1.1 A; LB = 6 µH;
circuit) -VBB = 4 V; (-dIB/dt = 0.6 A/µs)
ts Turn-off storage time 5.0 6.0 µs
tf Turn-off fall time 0.4 0.6 µs
ICsat
+ 50v 90 %
100-200R
IC
10 %
Horizontal
tf t
Oscilloscope ts
IB
Vertical IBend
100R 1R t
6V
30-60 Hz
- IBM
IC / mA + 150 v nominal
adjust for ICM
1mH
250
200
0 -VBB
VCE / V min
VCEOsust
Fig.2. Oscilloscope display for VCEOsust. Fig.5. Switching times test circuit (BU1508AX).
ICsat h FE
TRANSISTOR 100
IC DIODE
t
5V
IB IBend
10
t
1V
20us 26us
64us Tj = 25 C
Tj = 125 C
VCE
1
0.01 0.1 1 10
t IC / A
Fig.3. Switching times waveforms. Fig.6. Typical DC current gain. hFE = f (IC)
parameter VCE
VBESAT / V VCESAT / V
1.2 10
Tj = 25 C Tj = 25 C
1.1
Tj = 125 C Tj = 125 C
1.0
6A
0.9
4.5A
0.8 IC/IB= 1
3
0.7
4 3A
0.6 5
IC=2A
0.5
0.4 0.1
0.1 1 10 0.1 1 10
IC / A IB / A
Fig.7. Typical base-emitter saturation voltage. Fig.10. Typical collector-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB VCEsat = f (IB); parameter IC
VCESAT / V Eoff / uJ
1.0 1000
0.9 IC/IB=
0.8 5 IC = 4.5A
0.7 4 3.5A
0.6 3
0.5 100
Tj = 25 C
0.4 Tj = 125 C
0.3
0.2
0.1
0 10
0.1 1 10 0.1 1 10
IC / A IB / A
Fig.8. Typical collector-emitter saturation voltage. Fig.11. Typical turn-off losses. Tj = 85˚C
VCEsat = f (IC); parameter IC/IB Eoff = f (IB); parameter IC
VBESAT / V ts, tf / us
1.2 12
Tj = 25 C 11
ts
1.1 Tj = 125 C 10
9
1.0 8
7
0.9 IC= 6
6A 5
0.8 4.5A 4 IC =
3A 3 4.5A
2A 3.5A
0.7 2
tf
1
0.6 0
0 1 2 3 4 0.1 1 10
IB / A IB / A
Fig.9. Typical base-emitter saturation voltage. Fig.12. Typical collector storage and fall time.
VBEsat = f (IB); parameter IC ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C
1 ms
Zth / (K/W) I
10 0.1
10 ms
0.5 DC
1
0.2
0.1
0.05 0.01
0.1 0.02 tp 1 10 100 1000
PD tp D=
T VCE / V
D=0 Fig.15. Forward bias safe operating area. Ths = 25˚C
T
t I Region of permissible DC operation.
0.01 II Extension for repetitive pulse operation.
1E-06 1E-04 1E-02 1E+00
t/s NB: Mounted with heatsink compound and
Fig.14. Transient thermal impedance. 30 ± 5 newton force on the centre of
Zth j-hs = f(t); parameter D = tp/T the envelope.
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g 10.3
max
4.6
max
3.2
3.0 2.9 max
3
2.5
13.5
min.
1 2 3
Fig.16. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.