Week7HW Solutions

Mark
Lundstrom 2/24/2013
SOLUTIONS: ECE 606 Homework Week 7

Mark Lundstrom
Purdue University
(revised 3/27/13)

1) Consider an n-‐type semiconductor for which the only states in the bandgap are donor
levels (i.e. ( ET = E D ). Begin with the SRH formula:
np − ni2
R=
( n + n1 )τ p + ( p + p1 )τ n

where

n1 = ni e( T i ) B and p1 = ni e( i
E′ − E k T E − ET′ ) k BT

and answer the following questions.

1a) Derive an expression for the low-‐injection, minority hole lifetime.

Solution:

R=
( n0 + Δn)( p0 + Δp ) − ni2
( n0 + Δn + n1 )τ p + ( p0 + Δp + p1 )τ n

Low level injection in an N-‐type semiconductor means: n0 + Δn ≈ n0 and p0 + Δp ≈ Δp
so:

n0 Δp
R≈
( n0 + n1 )τ p + ( Δp + p1 )τ n

Assume a moderately doped semiconductor, so the Fermi level is located well above
Ei but well below EC and ED. In this case:

n1 = ni e(
′ − Ei ) k BT
>> n0 = ni e(
ED E F − Ei ) k BT

p1 = ni e(
′ ) k BT
<< p0 = ni e(
Ei − E D Ei − E F ) k BT
and p0 << n0

so the recombination rate becomes:

ECE-‐606 1 Spring 2013

Mark Lundstrom 2/24/2013
Δp Δp
R≈ = τ hole = ( n1 n0 )τ p
( n1 n0 )τ p τ hole

1b) Explain mathematically why donor levels are not efficient recombination
centers.

Solution:
For donor level traps:

τ hole = ( n1 n0 )τ p = e(
′ − E F ) k BT
ED
τ p >> τ p

The hole minority carrier lifetime is very long, so the recombination rate is low.

1c) Explain physically why donor levels are not efficient recombination centers.

Solution:

Donor “traps” can efficiently capture electrons from the conduction band, but they
will quickly be emitted back to the conduction band. The probability of emission to
the conduction band is MUCH more efficient than the probably of capturing a hole
from the valence band (which is necessary for recombination).

2) When computing SRH recombination rates, we usually focus on defects with energy
levels near the middle of the bandgap. Beginning with the SRH expression, show that
states near the middle of the bandgap have the largest effect on the SRH
recombination rate.

Solution:

np − ni2
n1 = ni e(
ET′ − Ei ) k BT
p1 = ni e(
Ei − ET′ ) k BT
R=
( n + n1 )τ p + ( p + p1 )τ n

Need to evaluate: ∂R ∂ ET′ = 0

∂R ⎛ ∂n ∂p ⎞
( )( ) ( ) ( )
−2
= np − ni2 −1 ⎡⎣ n + n1 τ p + p + p1 τ n ⎤⎦ × ⎜ 1 τ p + 1 τ n ⎟ = 0
∂ET′ ⎝ ∂ET′ ∂ET′ ⎠


⎛ ∂n1 ∂p1 ⎞
⎜ ∂E ′ τ p + ∂E ′ τ n ⎟ = 0
⎝ T T ⎠

∂n1 n ∂ p1 p
= 1 = − 1
∂ ET′ k BT ∂ ET′ k BT

n τ
n1τ p = p1τ n 1 = e ( T i ) B = n
2 E′ − E k T
p1 τp

k BT ⎛ τ n ⎞
ET′ = Ei + ln ⎜ ⎟
2 ⎝τp⎠

If τ n is not too different from τ p , then the most effective recombination centers
will be located near the intrinsic level.

3) Defect states come in two flavors. A “donor-‐like” state is positive when empty and
neutral when filled. An acceptor-‐like state is neutral when empty and negative when
filled. These states have different cross sections for electrons and holes. For example,
when empty, a donor-‐like state has a large cross section for electron capture because
there is a Coulombic attraction (a typical number might be 3× 10−13 cm2). When a
donor like state is filled, it is neutral and has a small cross section for holes (typically
the radius of the defect itself, or about 10−15 cm-‐2).

3a) Assume an N-‐type silicon sample with an RG center concentration of 1012 cm-‐3.
(Assume that the RG centers are located near the middle of the bandgap, as is
typically the case.) Assume room temperature, so that υth ≈ 107 cm/s. Compute
the minority hole lifetime assuming that the defects are donor-‐like.

Solution:

Fermi level is well above the trap energy, so the traps are filled, which means
neutral for donor-‐like traps. This will give a small cross section, because there
is no Coulombic attraction for holes. So (assuming that the thermal velocity is
107 cm/s):

1 1
τp = = −15 = 10−4 s = 100 µs
c p N T 10 × 10 × 10 7 12

τ p = 100 µs

3b) Repeat 3a) assuming that the defects are acceptor-‐like. (Assume that the RG
centers are located near the middle of the bandgap, as is typically the case.)

When acceptor like traps are filled, they are negatively charged, which creates a
strong attraction for holes. The cross section will be large.

1 1
τp = = −13
= 3.33× 10−7 s = 0.33 µs
c p N T 3× 10 × 10 × 10 7 12

τ p = 0.33 µs

4) The Fermi function gives the probability that a state in the conduction or valence band
is occupied. One might think that the probability that a state in the forbidden gap (i.e. a
trap or recombination center) would also be given by the Fermi function, but this is not
quite right. Begin with eqn. (5.9a) in ASF, simplify it for equilibrium, and obtain the
correct result.

Solution:

From eqn. (5.9a):

rN = cn pT n − en nT

In equilibrium:

rN 0 = cn0 pT 0 n0 − en0 nT 0 = 0

From eqn. (5.11a):

en0 = cn0 n1

so
rN 0 = cn0 pT 0 n0 − cn0 n1nT 0 = 0

pT 0 n0 = n1nT 0


(N T
− nT 0 ) n0 = n1nT 0
N T n0 = nT 0 ( n1 + n0 )
nT 0 n0 1
= fT = =
NT n1 + n0 1+ n1 n0

n1 ni e( T i )
E′ − E k BT
= e(
ET′ − Ei ) k BT
=
n0 ni e( EF − Ei ) k BT

1
fT ( ET′ ) = ( ET′ − EF ) k BT

1+ e

ET′ = ET ± k BT ln gT (plus sign for acceptor-‐like defects and minus sign for donor-‐like
defects)

For the plus sign (acceptor-‐like states):
1
fT ( ET ) =
1+ gT e(
ET − E F ) k BT

and for the minus sign (donor-‐like states):

1
fT ( ET ) =
1 ( ET − EF ) k BT
1+ e
gT

These are almost Fermi functions – except for the trap degeneracy factor (like the
degeneracy factors we saw for donors and acceptors).

-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐-‐
Problems 5) – 13): The following problems concern the Minority Carrier Diffusion
equation for electrons as follows:

∂ Δn d 2 Δn Δn
= Dn − + GL
∂t dx 2 τn

For all the following problems, assume silicon at room temperature, uniformly doped with
N A = 1017 cm-‐3, µ n = 300 cm2/V sec, τ n = 10−6 s. From these numbers, we find:

kBT
Dn = µn = 7.8 cm 2 s Ln = Dnτ n = 27.9 µm
q

Unless otherwise stated, these parameters apply to all of the problems below.

5) The sample is uniformly illuminated with light, resulting in an optical generation rate
GL = 1020 cm-‐3 sec-‐1. Find the steady-‐state excess minority carrier concentration and
the QFL’s Fn and Fp . Assume spatially uniform conditions, and approach the
problem as follows.

5a) Simplify the Minority Carrier Diffusion Equation for this problem.

Solution:

∂ Δn d 2 Δn Δn
Begin with: = Dn − + GL
∂t dx 2 τn

d 2 Δn Δn
Simplify for steady-‐state: 0 = Dn − + GL
dx 2 τn

Δn
Simplify for spatially uniform conditions: 0 = 0 − + GL
τn
So the simplified MDE equation is:

Δn
− + GL = 0
τn

5b) Specify the initial and boundary conditions, as appropriate for this problem.

Solution:

Since there is no time dependence, there is no initial condition. Since there is
no spatial dependence, there are no boundary conditions.

5c) Solve the problem.

Solution:
In this case the solution is trivial: Δn = GLτ n = 10 20 × 10 −6 = 1014 cm -3


Now compute the QFLs:

Since we are doped p-‐type and in low level injection:

p ≈ p0 = N A = ni e
(E −F )
i p k BT

⎛N ⎞ ⎛ 1017 ⎞
Fp = Ei − k BT ln ⎜ A ⎟ = Ei − 0.026ln ⎜ 10 ⎟ = Ei − 0.41 eV
⎝ ni ⎠ ⎝ 10 ⎠
n ≈ Δn >> n0 = ni e(
Fn − Ei ) k BT

⎛ Δn ⎞ ⎛ 1014 ⎞
Fn = Ei + k BT ln ⎜ ⎟ = Ei + 0.026ln ⎜ 10 ⎟ = Ei + 0.24 eV
⎝ ni ⎠ ⎝ 10 ⎠

5d) Provide a sketch of the solution, and explain it in words.

Solution:
The excess carrier density is just constant, independent of position. So are the
QFL’s, but they split because we are not in equilibrium.

The hole QFL is essentially where the equilibrium Fermi level was, because the
hole concentration is virtually unchanged. But the electron QFL is much closer
to the conduction band because there are orders of magnitude more electrons.

6) The sample has been uniformly illuminated with light for a long time. The optical
generation rate is GL = 1020 cm-‐3 sec-‐1. At t = 0, the light is switched off. Find the
excess minority carrier concentration and the QFL’s vs. time. Assume spatially
uniform conditions, and approach the problem as follows.


Solution:
∂ Δn d 2 Δn Δn
∂t dx 2 τn

dΔn Δn
Simplify for spatially uniform conditions with no generation: =−
dt τn


Solution:
Because there is no spatial dependence, there is no need to specify boundary
condition. The initial condition is (from prob. 5):

Δn ( t = 0 ) = 1014 cm -3


Solution:

dΔn Δn
=− The solution is: Δn ( t ) = Ae−t /τ n
dt τn

Now use the initial contition:

Δn ( 0 ) = 1014 = A

Δn ( t ) = 1014 e−t /τ n


Solution:

⎛ Δn ( t ) + n0 ⎞
For the electron QFL: Fn ( t ) = Ei + kBT ln ⎜ ⎟⎠
⎝ ni

Initially, Δn ( t ) >> n0 and Δn ( t ) = Δn ( 0 ) e−t /τ n , so

Fn(t) initially drops linearly with time towards EF.

GL = 1020 cm-‐3 sec-‐1. The minority carrier lifetime is 1 μsec, except for a thin layer (10
nm wide near x = 0 where the lifetime is 0.1 nsec. Find the steady state excess
minority carrier concentration and QFL’s vs. position. You may assume that the
sample extends to x = +∞ . HINT: treat the thin layer at the surface as a boundary
condition – do not try to resolve Δn ( x ) inside this thin layer.

Approach the problem as follows.


Solution:
∂ Δn d 2 Δn Δn
∂t dx 2 τn

d 2 Δn Δn
Simplify for steady-‐state conditions: 0 = Dn − + GL
dx 2 τn

The simplified MDE equation is:

d 2 Δn Δn d 2 Δn Δn GL
Dn − + G = 0 − 2 + = 0 Ln = Dnτ n
dx 2 τ n
L
dx 2 Ln Dn

d 2 Δn Δn GL
− 2 + = 0 where Ln = Dnτ n is the minority carrier “diffusion
dx 2 Ln Dn
length.”


Solution:

Since this is a steady-‐state problem, there is no initial condition. As x → ∞ , we
have a uniform semiconductor with a uniform generation rate. In a uniform
semiconductor under illumination, Δn = GLτ n , so

Δn ( x → ∞ ) = GLτ n


At the surface, the total number of e-‐h pairs recombining per cm2 per second is

Δn ( 0 ) Δx Δx
RS = Δx = Δn ( 0 ) = S F Δn ( 0 ) cm-‐2-‐s-‐1 where S F = cm/s is the “front
τS τS τS
surface recombination velocity.

Δx 10−6
SF = = −10 = 104 cm/s
τ S 10

In steady-‐state, carriers must diffuse to the surface at the same rate that there
are recombining there so that the excess minority carrier concentration at the
surface stays constant with time.

dΔn
+ Dn = RS = S F Δn ( 0 )
dx x=0

Note: We usually specify surface recombination by just giving the surface
recombination velocity – not the lifetime and thickness of the thin
layer at the surface.


Solution:

d 2 Δn Δn GL
− 2 + =0
dx 2 Ln Dn

Solve the homogeneous problem first GL = 0.

d 2 Δn Δn
2
− 2 = 0 solution is Δn ( x ) = Ae− x/Ln + Be+ x/Ln
dx Ln

Now solve for a particular solution by letting x → ∞ where everything is
uniform:

Δn G L2
− 2 + L = 0 The solution is: Δn = − n GL = GLτ n
Ln Dn Dn

ECE-‐606 10 Spring 2013

Add the two solutions: Δn ( x ) = Ae− x/Ln + Be+ x/Ln + GLτ n

To satisfy the first boundary condition in 7b): B = 0. Now consider the second:

dΔn D
+ Dn = − n A = S F Δn ( 0 ) = S F ( A + GLτ n )
dx x=0 Ln

S F GLτ n GLτ n
A= − =−
Dn τ n + S F 1+ ( Dn τ n ) S F

⎡ e− x/ Ln ⎤
Δn ( x ) = GLτ n ⎢1− ⎥
⎢⎣ 1+ ( Dn τ n ) S F ⎥⎦

Check some limits.

i) SF = 0 cm/s, which implies that there is no recombination at the surface.
Then we find: Δn ( x ) = GLτ n , which make sense, since we have spatial
uniformity.

ii) S F → ∞ . Strong recombination at the surface should force Δn ( x = 0 ) = 0 ,
but in the bulk we should still have Δn ( x ) = GLτ n . The transition from 0 to
a finite value on the bulk should take a diffusion length or two.

From the solution:

⎡ e− x/ Ln ⎤
Δn ( x ) = GLτ n ⎢1− ⎥
⎢⎣ 1+ ( Dn τ n ) S F ⎥⎦

For S F → ∞ , we find

Δn ( x ) → GLτ n ⎡⎣1− e− x/ Ln ⎤⎦

which behaves as expected.

ECE-‐606 11 Spring 2013



Solution:

Concentration is GLτ n in the bulk, but less at the surface, because of surface
recombination. The transition from the surface to the bulk takes place over a
distance that is roughly the diffusion length.

The hole QFL is constant and almost exactly where the equilibrium Fermi level
was, because we are in low level injection (the hole concentration is very, very
near its equilibrium value). But the electron QFL is much closer to the
conduction band edge. It moves away from EC near the surface, because surface
recombination reduces Δn ( x ) near the surface. The variation with position is
linear, because Δn ( x ) varies exponentially with position.

ECE-‐606 12 Spring 2013

GL = 1024 cm-‐3 sec-‐1, but all of the photons are absorbed in a thin layer (10 nm wide
near x = 0). Find the steady state excess minority carrier concentration and QFL’s vs.
position. You may assume that the sample extends to x = +∞ . HINT: treat the thin
layer at the surface as a boundary condition – do not try to resolve Δn ( x ) inside this
thin layer. Approach the problem as follows.


Solution:
∂ Δn d 2 Δn Δn
∂t dx 2 τn

d 2 Δn Δn
dx 2 τn

Let’s treat the generation in a thin surface layer as a boundary condition, GL = 0

The simplified MDE equation is:

d 2 Δn Δn d 2 Δn Δn d 2 Δn Δn
Dn − = 0 − = 0 − 2 = 0 Ln = Dnτ n
dx 2 τn dx 2 Dnτ n dx 2 Ln

d 2 Δn Δn
− 2 = 0 where Ln = Dnτ n is the minority carrier diffusion length.
dx 2 Ln


Solution:

expect all of the minority carriers to have recombined, so:

Δn ( x → ∞ ) = 0

At the surface, the total number of e-‐h pairs generation per cm2 per second is
GS = GL Δx = 102410−6 = 1018 cm -2s-1 . In steady-‐state, these must diffuse away at
the same rate that they are generated, so

ECE-‐606 13 Spring 2013

dΔn
− Dn = GS
dx x=0


Solution:

d 2 Δn Δn
− 2 = 0 solutions is Δn ( x ) = Ae− x/Ln + Be+ x/Ln
dx 2 Ln

To satisfy the first boundary condition in 8b): B = 0. Now consider the second:

dΔn Dn GS 1018
− Dn →+ A = GS → A = = = 3.6 × 1014 cm -3
dx x=0 Ln ( Dn Ln ) 7.8 27.9 × 10 −4
Δn ( x ) =
GS
( Dn Ln ) ( )
e− x/ Ln = 3.6 × 1014 e− x/ Ln


Solution:

Electrons are generated at the surface and diffuse into the bulk, so the
concentration is high at the surface and approaches zero several diffusion
lengths into the bulk.

ECE-‐606 14 Spring 2013


Deep in the bulk, there are no excess carriers so Fn = Fp = E F . The electron QFL
must get closer to the conduction band near the surface, because the excess
electron concentration is larger there. The variation is linear with position
because Δn ( x ) varies exponentially with position.

GL = 1024 cm-‐3 sec-‐1, but all of the photons are absorbed in a thin layer (10 nm wide
near x = 0). Find the steady state excess minority carrier concentration and QFL’s vs.
position. Assume that the semiconductor is only 5 μm long. You may also
assume that there is an “ideal ohmic contact” at x = L = 5 μm, which enforces
equilibrium conditions at all times. Make reasonable approximations, and approach
the problem as follows. HINT: treat the thin layer at the surface as a boundary
condition – do not try to resolve Δn ( x ) inside this thin layer.


Solution:
∂ Δn d 2 Δn Δn
∂t dx 2 τn

d 2 Δn Δn
dx 2 τn

Let’s treat the generation in a thin surface layer as a boundary condition, so
GL = 0 ;

the simplified MDE equation is:

ECE-‐606 15 Spring 2013

Dn − = 0 − = 0 − 2 = 0 Ln = Dnτ n

Since the sample is much thinner than a diffusion length, we can ignore
recombination, so

d 2 Δn
= 0 .
dx 2


Since this is a steady-‐state problem, there is no initial condition. At x = L , we

Δn ( x = L ) = 0

At the surface, the total number of e-‐h pairs generation per cm2 per second is
GS = GL Δx = 102410−6 = 1018 cm -2s-1 . In steady-‐state, these must diffuse away at
the same rate that they are generated, so

dΔn
− Dn = GS
dx x=0


Solution:

d 2 Δn
= 0 solutions is Δn ( x ) = Ax + B
dx 2

To satisfy the first boundary condition in 9b): Δn ( L ) = AL + B = 0 .

B = −AL

Now consider the second:

dΔn D GS 1018
− Dn → − n A = GS → A = − =− = −6.4 × 1013 cm -3
dx x=0 L ( Dn L) 7.8 5 × 10 −4
ECE-‐606 16 Spring 2013

Δn ( x ) =
GS
( Dn L) ( ( )
L − x ) = 6.4 × 1013 ( L − x )


Concentration increases towards surface, because generation occurs the. Is
zero at x = L because of the boundary condition there. Variation is linear with
position because there is no recombination.

Electron QFL(x) follows from n ( x ) ≈ Δn ( x ) = ni e
−( Fn ( x )− Ei )/k BT
.

10) The sample is in the dark, but the excess carrier concentration at x = 0 is held
constant at Δn ( 0 ) = 1012 cm-‐3. Find the steady state excess minority carrier
concentration and QFL’s vs. position. You may assume that the sample extends to
x = +∞ . Make reasonable approximations, and approach the problem as follows.


Solution:
∂ Δn d 2 Δn Δn
∂t dx 2 τn

d 2 Δn Δn
dx 2 τn

No generation: GL = 0 ;
ECE-‐606 17 Spring 2013



Dn − = 0 − = 0 − 2 = 0 Ln = Dnτ n

d 2 Δn Δn
dx 2 Ln


Solution:


Δn ( x → ∞ ) = 0

At the surface, the excess electron concentration is held constant, so

Δn ( x = 0 ) = 1012 cm -3


Solution:

d 2 Δn Δn
− 2 = 0 solutions is Δn ( x ) = Ae− x/Ln + Be+ x/Ln
dx 2 Ln

To satisfy the first boundary condition in 10b): B = 0. Now consider the
second:

Δn ( 0 ) = 1012 cm -3

( )
Δn ( x ) = Δn ( 0 ) e− x/ Ln = 1012 e− x/ Ln


ECE-‐606 18 Spring 2013

Solution:

Looks just like the solutions for prob. 8). Only difference is that instead of
creating Δn ( 0 ) by generation at the surface, we just specify Δn ( 0 ) directly.

11) The sample is in the dark, and the excess carrier concentration at x = 0 is held
concentration and QFL’s vs. position. Assume that the semiconductor is only 5
μm long. You may also assume that there is an “ideal ohmic contact” at x = L = 5 μm,
which enforces equilibrium conditions at all times. Make reasonable
approximations, and approach the problem as follows.


Solution:
∂ Δn d 2 Δn Δn
∂t dx 2 τn

d 2 Δn Δn
dx 2 τn

Generation is zero for this problem: GL = 0 ;


d 2 Δn Δn d 2 Δn Δn
Dn − = 0 − 2 = 0 Ln = Dnτ n
dx 2 τn dx 2 Ln

Since the sample is much thinner than a diffusion length, we can ignore
recombination, so

d 2 Δn
= 0 .
dx 2


Solution:

ECE-‐606 19 Spring 2013


Δn ( x = L ) = 0

At the surface:

Δn ( 0 ) = 1012 cm -2


Solution:

d 2 Δn
= 0 the solution is Δn ( x ) = Ax + B
dx 2

To satisfy the first boundary condition in 9b): Δn ( L ) = AL + B = 0 .

B = −AL

Now consider the second boundary condition:

Δn ( 0 ) = B = 1012 cm -3

( )
Δn ( x ) = Δn ( 0 ) ( L − x ) = 1012 ( L − x )


Solution:

Just like problem 9)

12) The sample is in the dark, and the excess carrier concentration at x = 0 is held
concentration and QFL’s vs. position. Assume that the semiconductor is 30 μm
long. You may also assume that there is an “ideal ohmic contact” at x = L = 30 μm,
which enforces equilibrium conditions at all times. Make reasonable
approximations, and approach the problem as follows.

ECE-‐606 20 Spring 2013


Solution:
∂ Δn d 2 Δn Δn
∂t dx 2 τn

Simplify for steady-‐state and no generation:

Dn − = 0 − = 0 − 2 = 0 Ln = Dnτ n

d 2 Δn Δn
dx 2 Ln


Solution:

Steady state, so no initial conditions are necessary. The boundary conditions
are:

Δn ( 0 ) = 1012 cm-‐3
Δn ( 30 µm ) = 0


Solution:

Δn ( x ) = Ae− x/Ln + Be+ x/Ln

Because the region is about one diffusion length long, we need to retain both
solutions.

Δn ( 0 ) = A + B
Δn ( L = 30 µm ) = Ae− L / Ln + Be+ L / Ln = 0

Solve for A and B to find:

ECE-‐606 21 Spring 2013

−Δn ( 0 ) e+ L/Ln
A=
( e− L/Ln − e+ L/Ln )

Δn ( 0 ) e− L/Ln
B=
( e− L/Ln − e+ L/Ln )

So the solution is:

Δn ( 0 )
Δn ( x ) = − L/Ln ⎡ −e−( x−L )/Ln + e+( x−L )/Ln ⎤⎦
(e − e ) + L/Ln ⎣

sinh ⎡⎣( x − L ) / Ln ⎤⎦
Δn ( x ) = Δn ( 0 )
sinh ( L / Ln )


Solution:

The short base result is linear, but in this case, the slope in a little steeper
initially and a little shallower at the end. Since the diffusion current is
proportional to the slope, this means that inflow greater than outflow. This
occurs because some of the electrons that flow in, recombine in the structure,
so the same number cannot flow out.

13) Consider a sample that extends from −5 ≤ x ≤ 200 μm. The sample is illuminated
with light, resulting in an optical generation rate GL = 1024 cm-‐3 sec-‐1, but all of the
photons are absorbed in a very thin layer (10 nm wide centered about x = 0). Assume
ECE-‐606 22 Spring 2013

that half of the carriers generated in this region diffuse to the left and half to the
right. You may also assume that there are “ideal ohmic contacts”, which enforce
equilibrium conditions at all times located at x = −5 μm and at x = 200 μm. Find the
steady state excess minority carrier concentration and QFL’s vs. position. Make
reasonable approximations, and approach the problem as follows.


∂ Δn d 2 Δn Δn
= Dn − + GL
∂t dx 2 τn

Steady-‐state, no generation (treat generation near x = 0 as a boundary
condition).

For x > 0:

d 2 Δn Δn
− 2 =0
dx 2 Ln

For x < 0, we could also solve this equation, but the region is thin for x < 0, so we
can ignore recombination and solve:

d 2 Δn
= 0
dx 2


Solution:

Steady-‐state, so no initial condition. At the boundaries:

Δn ( x = −5 µm ) = 0

Δn ( x = 200 µm ) = 0

At x = 0-‐ and x = 0+ we can assume that one-‐half of the carriers generated in the
thin region diffuse to the left and one-‐half to the right.

ECE-‐606 23 Spring 2013

dΔn G Δx G
Dn = L = S
dx x=0− 2 2

dΔn G
− Dn = S
dx x=0+ 2


Solution:

For x < 0-‐, the solutions is: Δn ( x ) = Ax + B

( ) ( ) (
At x = -‐ 5 micrometers: Δn −5 × 10 −4 = 0 = A −5 × 10 −4 + B B = 5 × 10 −4 A )
At x = 0-‐:

dΔn ( x ) G GS
Dn = Dn A = S A =
dx 2 2D
n
x=0−

GS

Δn ( x ) =
2Dn
( x + 5 µm )

For x > 0+: the solution is:

Δn ( x ) = Ae− x/Ln + Be+ x/Ln Δn ( x ) = Ae− x/Ln

Because for x > 0, we can treat the region as being infinitely long.

dΔn D G GS
− Dn = n A = S A=
dx x=0+ Ln 2 2 ( Dn Ln )

GS
Δn ( x ) = e− x/Ln
2 ( Dn Ln )

Note that Δn 0 − = ( ) GS
2Dn
( 5 µm ) =
GS
2 ( Dn 5 µm )
and

note that Δn 0 + = ( ) 2 ( DG L ) = 2 ( D
S GS
27.9 µm )
n n n
ECE-‐606 24 Spring 2013

so

Δn ( 0 + ) 27.9
= = 5.6
Δn ( 0 −
) 5


Carriers are generated at x = 0 and diffuse away to both sides. They diffuse
slower for x > 0, so the carrier density for x > 0 is higher than for x < 0.
ECE-‐606 25 Spring 2013

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Mark

SOLUTIONS: ECE 606 Homework Week 7

ECE-­‐606 1 Spring 2013

ECE-­‐606 2 Spring 2013

ECE-­‐606 3 Spring 2013

ECE-­‐606 4 Spring 2013

ECE-­‐606 5 Spring 2013

ECE-­‐606 6 Spring 2013

Now compute the QFLs:

ECE-­‐606 7 Spring 2013

ECE-­‐606 8 Spring 2013

Initially, Δn ( t ) >> n0 and Δn ( t ) = Δn ( 0 ) e−t /τ n , so

ECE-­‐606 9 Spring 2013

ECE-­‐606 10 Spring 2013

Add the two solutions: Δn ( x ) = Ae− x/Ln + Be+ x/Ln + GLτ n

ECE-­‐606 11 Spring 2013

ECE-­‐606 12 Spring 2013

ECE-­‐606 13 Spring 2013

ECE-­‐606 14 Spring 2013

ECE-­‐606 15 Spring 2013

ECE-­‐606 16 Spring 2013

ECE-­‐606 17 Spring 2013

ECE-­‐606 18 Spring 2013

ECE-­‐606 19 Spring 2013

ECE-­‐606 20 Spring 2013

ECE-­‐606 21 Spring 2013

ECE-­‐606 22 Spring 2013

ECE-­‐606 23 Spring 2013

ECE-­‐606 24 Spring 2013

ECE-­‐606 25 Spring 2013

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ECE-‐606 1 Spring 2013

ECE-‐606 2 Spring 2013

ECE-‐606 3 Spring 2013

ECE-‐606 4 Spring 2013

ECE-‐606 5 Spring 2013

ECE-‐606 6 Spring 2013

ECE-‐606 7 Spring 2013

ECE-‐606 8 Spring 2013

ECE-‐606 9 Spring 2013

ECE-‐606 10 Spring 2013

ECE-‐606 11 Spring 2013

ECE-‐606 12 Spring 2013

ECE-‐606 13 Spring 2013

ECE-‐606 14 Spring 2013

ECE-‐606 15 Spring 2013

ECE-‐606 16 Spring 2013

ECE-‐606 17 Spring 2013

ECE-‐606 18 Spring 2013

ECE-‐606 19 Spring 2013

ECE-‐606 20 Spring 2013

ECE-‐606 21 Spring 2013

ECE-‐606 22 Spring 2013

ECE-‐606 23 Spring 2013

ECE-‐606 24 Spring 2013

ECE-‐606 25 Spring 2013