CVD

MOS Transistor
 CVD Thin Film Growth

3 5 6
4
Atmospheric Pressure CVD
Atmospheric Pressure CVD
 Atmospheric Pressure CVD

Horizontal type Barrel type

Atmospheric Pressure CVD
Low Pressure CVD
Low Pressure CVD
Laser Enhanced CVD
Plasma Enhanced CVD
Plasma Enhanced CVD
Plasma Enhanced CVD
 Thin Film
Deposition
• Quality – composition, defect density, mechanical and electrical properties
• Uniformity – affect performance (mechanical , electrical)

Thinnin
g leads
to ↑ R

Voids: Trap chemicals lead to

cracks (dielectric) large contact
resistance and sheet resistance
(metallization)
AR (aspect ratio) = h/w ↑ with
↓ feature size in ICs.
 Examples

Poor step coverage with increasing AR

Thinning causes
metal resistance to
increase,
generates heat
and lead to failure
Chemical Vapor Deposition
Methods of Deposition:
Cold wall Chemical Vapor Deposition
reactor (CVD):APCD, LPCVD, HDPCVD
Physical Vapor Deposition (PVD:
evaporation, sputtering)

Atmospheric Pressure : APCVD

Flat on the
susceptor Cold wall reactors (walls not heated -
only the susceptor)

Low pressure: LPCVD – batch

processing.

Hot wall
reactor
 Atmospheric Pressure Chemical Vapor Deposition
Steps in deposition

Transport by forced Transport of byproducts by

convection forced convection
@ the surface (4): decomposition,
By diffusion reaction, surface migration attachment
through
boundary layer
Diffusion through the B. L etc.
adsorption Desorption of by products
(3) May be desorption which depends
on a sticking coefficient  (4)

Growth rate for Si deposition

N=5•1022cm-3
transport
Mole fraction of the
reaction incorporating species in the gas
phase.

Partial pressure
Steady state

As in Deal-Grove
model for oxidation
V = 0.14 µm/min
Total concentration in the gas phase
PG @ 1 torr
CT = 1 * 1019 cm-3 5 * 1022
Ptotal = 1 atm = 760 torr
 Growth Kinetics
Determined by the Smaller of ks or hG Two limiting cases
kS limited deposition is VERY temp sensitive.
hG limited deposition is VERY geometry 1) Surface reaction ks << hG
(boundary layer) sensitive Control: fast transport
slow reaction
C
Limited by transport v = T kSY
N

2) Mass transfer or gas

phase diffusion hG << ks
Temperature uniformity CT
more important than the v= hGY
N
Put wafers gas flow  wafers
flat to vertically  poly-Si Fast reaction and slow transport.
ensure flow
uniformity Both are linear with time (t)
@ the Si
surface.
Epitaxy

Light mass
APCVD
SiO2
heavy

SiH4 the fastest growth (111) Si shows slower v – fewer

attachment sites than in (100) Si

Ea ≈ 1.6 eV for all Si sources 

H desorption from the Si surface.

With H2 as a gas carrier

Boundary Layer – Diffusion to the Surface

Gas moves with the constant velocity U.

Boundary layer (caused by friction ) increases
along the susceptor, mass transfer coefficient hG
decreases, gas depletion caused by consumption
of the reacting species (concentrations decrease)

Growth rate decreases along the chamber

• Use tilted susceptor

• Use T gradient 5-25°C
• Gas injectors along the tube
viscosity
• Use moving belt
B.L.
Deposition of alloys DIFFICULT – various
gas density reactions, kinetics (species, precursors)

Use PVD rather than CVD