BDX34, BDX34A, BDX34B, BDX34C, BDX34D

PNP SILICON POWER DARLINGTONS

● Designed for Complementary Use with

BDX33, BDX33A, BDX33B, BDX33C and
TO-220 PACKAGE
BDX33D (TOP VIEW)
● 70 W at 25°C Case Temperature
B 1
● 10 A Continuous Collector Current
C 2
● Minimum hFE of 750 at 3V, 3 A
E 3

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT
BDX34 -45
BDX34A -60
Collector-base voltage (IE = 0) BDX34B V CBO -80 V
BDX34C -100
BDX34D -120
BDX34 -45
BDX34A -60
Collector-emitter voltage (IB = 0) BDX34B VCEO -80 V
BDX34C -100
BDX34D -120
Emitter-base voltage VEBO -5 V
Continuous collector current IC -10 A
Continuous base current IB -0.3 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Ptot 70 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Ptot 2 W
Operating free air temperature range TJ -65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
Operating free-air temperature range TA -65 to +150 °C

NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

 


AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1

This datasheet has been downloaded from http://www.digchip.com at this page

BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BDX34 -45
BDX34A -60
Collector-emitter
V(BR)CEO IC = -100 mA IB = 0 (see Note 3) BDX34B -80 V
breakdown voltage
BDX34C -100
BDX34D -120
VCE = -30 V IB = 0 BDX34 -0.5
VCE = -30 V IB = 0 BDX34A -0.5
VCE = -40 V IB = 0 BDX34B -0.5
VCE = -50 V IB = 0 BDX34C -0.5
Collector-emitter VCE = -60 V IB = 0 BDX34D -0.5
ICEO mA
cut-off current VCE = -30 V IB = 0 TC = 100°C BDX34 -10
VCE = -30 V IB = 0 TC = 100°C BDX34A -10
VCE = -40 V IB = 0 TC = 100°C BDX34B -10
VCE = -50 V IB = 0 TC = 100°C BDX34C -10
VCE = -60 V IB = 0 TC = 100°C BDX34D -10
VCB = -45 V IE = 0 BDX34 -1
VCB = -60 V IE = 0 BDX34A -1
VCB = -80 V IE = 0 BDX34B -1
VCB = -100 V IE = 0 BDX34C -1
Collector cut-off VCB = -120 V IE = 0 BDX34D -1
ICBO mA
current VCB = -45 V IE = 0 TC = 100°C BDX34 -5
VCB = -60 V IE = 0 TC = 100°C BDX34A -5
VCB = -80 V IE = 0 TC = 100°C BDX34B -5
VCB = -100 V IE = 0 TC = 100°C BDX34C -5
VCB = -120 V IE = 0 TC = 100°C BDX34D -5
Emitter cut-off
IEBO VEB = -5 V IC = 0 -10 mA
current
VCE = -3 V IC = -4 A BDX34 750
VCE = -3 V IC = -4 A BDX34A 750
Forward current
hFE VCE = -3 V IC = -3 A (see Notes 3 and 4) BDX34B 750
transfer ratio
VCE = -3 V IC = -3 A BDX34C 750
VCE = -3 V IC = -3 A BDX34D 750
VCE = -3 V IC = -4 A BDX34 -2.5
VCE = -3 V IC = -4 A BDX34A -2.5
Base-emitter
VBE(on) VCE = -3 V IC = -3 A (see Notes 3 and 4) BDX34B -2.5 V
voltage
VCE = -3 V IC = -3 A BDX34C -2.5
VCE = -3 V IC = -3 A BDX34D -2.5
IB = -8 mA IC = -4 A BDX34 -2.5
IB = -8 mA IC = -4 A BDX34A -2.5
Collector-emitter
VCE(sat) IB = -6 mA IC = -3 A (see Notes 3 and 4) BDX34B -2.5 V
saturation voltage
IB = -6 mA IC = -3 A BDX34C -2.5
IB = -6 mA IC = -3 A BDX34D -2.5
Parallel diode
VEC IE = -8 A IB = 0 -4 V
forward voltage
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

 


AUGUST 1993 - REVISED SEPTEMBER 2002
2 Specifications are subject to change without notice.
 BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS

thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 1.78 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W

resistive-load-switching characteristics at 25°C case temperature

†
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ton Turn-on time IC = -3 A IB(on) = -12 mA IB(off) = 12 mA 1 µs
toff Turn-off time VBE(off) = 3.5 V RL = 10 Ω tp = 20 µs, dc ≤ 2% 5 µs
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

 


AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS

TYPICAL CHARACTERISTICS

TYPICAL DC CURRENT GAIN COLLECTOR-EMITTER SATURATION VOLTAGE

vs vs
COLLECTOR CURRENT COLLECTOR CURRENT
TCS135AF TCS135AH
50000 -2·0

VCE(sat) - Collector-Emitter Saturation Voltage - V

TC = -40°C tp = 300 µs, duty cycle < 2%
TC = 25°C IB = I C / 100
TC = 100°C
hFE - Typical DC Current Gain

10000
-1·5

1000
-1·0

TC = -40°C
VCE = -3 V TC = 25°C
tp = 300 µs, duty cycle < 2% TC = 100°C
100 -0·5
-0·5 -1·0 -10 -0·5 -1·0 -10
IC - Collector Current - A IC - Collector Current - A

Figure 1. Figure 2.

BASE-EMITTER SATURATION VOLTAGE

vs
COLLECTOR CURRENT
TCS135AJ
-3·0
TC = -40°C
VBE(sat) - Base-Emitter Saturation Voltage - V

TC = 25°C
TC = 100°C
-2·5

-2·0

-1·5

-1·0
IB = IC / 100
tp = 300 µs, duty cycle < 2%
-0·5
-0·5 -1·0 -10
IC - Collector Current - A

Figure 3.

 


AUGUST 1993 - REVISED SEPTEMBER 2002
4 Specifications are subject to change without notice.
 BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS

THERMAL INFORMATION

MAXIMUM POWER DISSIPATION

vs
CASE TEMPERATURE
TIS130AB
80
Ptot - Maximum Power Dissipation - W

70

60

50

40

30

20

10

0
0 25 50 75 100 125 150
TC - Case Temperature - °C

Figure 4.

 


AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
5