Goa College of Engineering

Department of Electronics and Telecommunication Engineering

SE ETC Sem III, Sub: Electronic Devices and Circuits, (RC 2019-20 )

*************************************
Tutorial Sheet 2 – Week 3 – 23rd Sept 2019

Problems: Last Date of submission: 30th Sept 2019.

Instruction: Assume appropriate missing data if any.

1. In an n-type semiconductor, the Fermi level lies 0.27ev below the conduction band at 300ok. If the
temperature is increased to 350 ok, find the new position of Fermi Level.

2. In an n-type semiconductor, the Fermi level lies 0.02 ev below the conduction band. If the concentration
of donor atoms is increased by a factor 6 times, find the new position of the Fermi level. Assume kT=
0.026 eV.

3. An n-type Ge bar has cross sectional area of 1.5 mm2, length of 1.6 cm, resistivity of 20 Ω-cm and carrier
lifetime of 60ms. One end of the bar is continuously irradiated with 8x1015 photons/second. Find the
resistance of the bar under continuous excitation at room temperature assuming that i) each incident
photon generates one negative hole pair and ii) these electrons and holes are uniformly distributed
throughout the bar. Given that ni at 300k = 2.5x1013/cm3, and mobility of electron= 3800 cm2/v-s.

4. The resistivity of p-type Si specimen is 0.12Ωm. Find electron and hole concentration.

5. A p-type material has an acceptor ion concentration of 1x1016 per cm3. Its intrinsic carrier concentration
is 1.48x1010/cm3. The hole and electron mobilities are 0.05m2/v-s and 0.13 m2/v-s respectively.
Calculate the resistivity of the material.

******************************************************************************************************
Subject Teacher: Dr. Samarth Borkar, Dept of E&TC, Goa College of Engineering.