'Izrizut/ J*>£.ml-L.ondu,etoi iPioaucti, Una.

C/

20 STERN AVE. TELEPHONE: (973) 376-2922

SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005
U.S.A. FAX: (973) 376-8960

BFQ43
Jl BFQ43S

V.H.F. POWER TRANSISTORS

N-P-N silicon planar epitaxial transistors intended for use in class-A, B or C operated mobile transmitters
with a nominal supply voltage of 13,5 V. The transistors are resistance stabilized and guaranteed to with-
stand severe load mismatch conditions with a supply over-voltage to 16,5 V. The BFQ43 and BFQ43S
are especially suited as driver transistors for the BLW31 in a two-stage wideband or semi-wideband
v.h.f. amplifier delivering 28 W output power.
The BFQ43 and BFQ43S have a TO-39 metal envelope with the emitter connected to the case which
enables excellent heatsinking and emitter grounding.

QUICK REFERENCE DATA

R.F. performance up to T^ = 25 °C

mode of operation VCE

\j MHz
PL
w
Gp
dB
n
%
Zj
n
y~L
mS

c.w. class-B 13,6 175 4 > 12 > 65 3,2+jO,03 53-J29

c.w, class-B 12,5 175 4 typ. 12 typ. 60 - -

MECHANICAL DATA Dimensions in mm

Fig.1 TO-39/3; emitter connected to case.

,-0,51
8.5
max

. 12,7 »J 7Z7813S
min

Maximum lead diameter is guaranteed only for 12,7 mm.

* Max. 4,9 for BFQ43S.

N.I Semi-Conductors reserves the right to change test conditions, parameter limits tind package dimensions without notice
Information furnished by Ml Scmi-Oumluclon ii bclwvtnl to he hnth accurate nml reliahle ,it the lime ot going to press. However VI
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BFQ43
BFQ43S

RATINGS
Jl
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (VBE " 0)
peak value VcESM max. 36 V
Collector-emitter voltage (open base) VCEO max. 18 V
Emitter-base voltage (open collector) VEBO max. 4 V
Collector current (average) 'C(AV) max. 1,25 A
Collector current (peak value); f> 1 MHz ICM max. 3,75 A
Total power dissipation up to Tmb = 25 °C Ptot max. 12 W
Storage temperature 'stg -65 to+175 °C
Operating junction temperature ri
max. 200 °C

7Z77626 7Z77627
15

c
(A) Ptot
(W)

10 (1)

0,5
\0 (2)

0,1
20 30 50 100
(V)

Fig. 2 D.C. SOAR. (1) Short-time r.f. operation during mismatch;

f 5 - 1 MHz.
(2) Continuous d.c. and r.f. operation: derate
by 0,05 W/K.
Fig, 3 Total power dissipation; VCE < 16,5 V.

THERMAL RESISTANCE (dissipation = 4 W; Tmb - 82 °C, i.e. Tn = 70 °C)

From junction to mounting base Rthj-mb =

From mounting base to heatsink Rtn m|j.n = 3 K/W

V.H.F. power transistors BFQ43
Jl BFQ43S

CHARACTERISTICS
TJ = 25 °C
Collector-emitter breakdown voltage
VBE " 0; Ic = 5 mA V(BR)CES > 36 V
Collector-emitter breakdown voltage
open base; Ic = 50 mA V(BR)CEO > 18 V
Emitter-base breakdown voltage
open collector; IE = 2 mA V (BR)EBO > 4V
Collector cut-off current
VBE = O;VCE = 18 v 'CES < 2 mA
Second breakdown energy; L - 25 mH; f = 50 Hz
open base ESBO > 0,5 mJ
RBE = 10 £2 ESBR > 0,5 mJ
D.C. current gain *
typ. 40
IC = 0,5A;V C E-5V "FE 10 to 80
Collector-emitter saturation voltage *
I C = 1,5 A; IB = 0,3 A vCEsat typ. 0,9 V
Transition frequency at f =• 100 MHz *
-IE = 0,5 A; VCB = 13,5 V f-p typ. 750 MHz
-IE = 1,5A;V CB -13,5V *T typ. 625 MHz
Collector capacitance at f - 1 MH7
IE = le = 0; VCB = 13,5V typ. 15 pF
Feedback capacitance at f = 1 MHz
1C =• 20 mA; VCE = 13,5V typ. 7,3 pF