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Electronic Devices and Circuit Theory, 9 ed., Boylestad and Nashelsky
German-Jordanian University
School of Applied Natural Sciences -
Energy Engineering
Configurations:
Common Base Configuration
Fig. 3.14 Characteristics of a silicon transistor in the common-emitter configuration: (a) collector characteristics; (b)
base characteristics.
Operating Point
Fig. 4.1 Various operating points within the limits of operation of a transistor.
Fig. 4.9 Determining ICsat. Fig. 4.10 Determining ICsat for the fixed-bias configuration.
Emitter Bias
Fig. 4.19 Network derived from the result of Fig. Fig. 4.20 Reflected impedance level of RE.
4.18
Design Operation
German-Jordanian University
School of Applied Natural Sciences -
Energy Engineering
AC Analysis:
• A model is an equivalent circuit that represents the AC characteristics of the
transistor.
• A model uses circuit elements that approximate the behavior of the transistor.
• There are two models commonly used in small signal AC analysis of a
transistor:
– re model
– Hybrid equivalent model
Fig. 5.6 (a) Common-base BJT transistor; (b) re model for the configuration of (a).
Fig. 5.11 (a) Common-emitter BJT transistor; (b) approximate model for the configuration of a).
Fig. 5.16 Determining the voltage and current gain for the
Fig. 5.12 Determining Zi using the approximate common-emitter transistor amplifier.
Fig. 5.23 Common-emitter configuration: (a) graphical symbol; (b) hybrid equivalent
circuit
Fig. 5.24 Common-base configuration: (a) graphical symbol; (b) hybrid equivalent
circuit.
Fig. 5.25 Effect of removing hre and hoe from the hybird equivalent circuit.
Fig. 5.27 Hybrid versus re model: (a) common-emitter configuration; (b) common-base configuration.
German-Jordanian University
School of Applied Natural Sciences -
Energy Engineering
Zi
A i A v
RC
Fig. 5.38 Demonstrating the 180° phase shift between input and output Fig. 5.39 Example 5.4.
waveforms.
Vo R C || ro
Av
Vi re
Vo R
Av C ro 10R C
Vi re
I R ro
Ai o
I i (ro R C )(R re )
I R
Ai o r 10R
I i R re o C
Io
Ai ro 10R C , R 10 re
Ii
Z
A i A v i
RC Fig. 5.40 Voltage-divider bias configuration.
Fig. 5.41Substituting the re equivalent circuit into the ac equivalent network of Fig. 5.40.
Vo R C
Av
Vi Zb
Vo RC
Av Z b (re R E )
Vi re R E
Vo R
Av C Z b R E
Vi RE
I R B
Ai o
Ii R B Zb
Z
A i A v i
RC
Vo R C R C
Av
Vi re re
I
A i o 1
Ii
Fig. 5.57 Common-base configuration.
Fig. 5.58 Substituting the re equivalent circuit into the ac equivalent network of Fig. 5.57.