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TO252
DPAK D
Top View Bottom View
D
D
G
S G
S
G S
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 18 22 °C/W
AD RθJA
Maximum Junction-to-Ambient Steady-State 44 55 °C/W
Maximum Junction-to-Case Steady-State RθJC 2.4 3 °C/W
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
100 100
10V
VDS=5V
5V 4V
80 80
60 4.5V 60
ID (A)
ID(A)
40 40
125°C
VGS=3.5V
20 20
25°C
0 0
0 1 2 3 4 5 2 2.5 3 3.5 4 4.5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)
9 2.2
Normalized On-Resistance 2
8 VGS=4.5V
VGS=10V
1.8 ID=20A
RDS(ON) (mΩ)
7
1.6 17
1.4
5
6
2
VGS=10V
1.2 VGS=4.5V10
5 ID=15A
1
4 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 200
ID (A)
Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E) 18
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
25 1.0E+02
ID=20A
1.0E+01
20
40
1.0E+00
RDS(ON) (mΩ)
15 1.0E-01 125°C
IS (A)
125°C
1.0E-02
10 25°C
1.0E-03
5 25°C 1.0E-04
0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)
10 2500
VDS=20V
ID=20A
8 2000
Ciss
Capacitance (pF)
VGS (Volts)
6 1500
4 1000
Coss
2 500
Crss
0 0
0 5 10 15 20 25 30 0 10 20 30 40
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
1000.0 900
10.0 100µs 17
DC 1ms 5
1.0 10ms 2
300 10
TJ(Max)=175°C
0.1
TC=25°C
0.0 0
0.01 0.1 1 10 100 1E-05 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe 18
Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)
10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJC Normalized Transient
TJ,PK=TC+PDM.ZθJC.RθJC
Thermal Resistance
RθJC=3°C/W 40
1
0.1 PD
Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
100 60
TA=25°C
IAR (A) Peak Avalanche Current
TA=100°C 50
TA=125°C 30
TA=150°C
20
10
10 0
1 10 100 1000 0 25 50 75 100 125 150 175
Time in avalanche, tA (µs) TCASE (°C)
Figure 12: Single Pulse Avalanche capability (Note Figure 13: Power De-rating (Note F)
C)
60 10000
50 TA=25°C
1000
Current rating ID(A)
40
17
Power (W)
30 100 5
2
20 10
10
10
0 1
0 25 50 75 100 125 150 175 0.00001 0.001 0.1 10 0 1000
TCASE (°C) Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient
TJ,PK=TA+PDM.ZθJA.RθJA
Thermal Resistance
1 RθJA=55°C/W 40
0.1
PD
0.01
Ton
Single Pulse T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
DUT -
Vgs
Ig
Charge
Resistive Switching Test Circuit & W aveforms
RL
Vds
Vds
90%
DUT
+ Vdd
Vgs VDC
Rg - 10%
ton toff
Id Vds
Vgs + Vdd I AR
Vgs VDC
Rg - Id
DUT
Vgs Vgs
Vds + Q rr = - Idt
DUT
Vgs
t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds