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NDF11N50Z, NDP11N50Z

N-Channel Power MOSFET


500 V, 0.52 W
Features
• Low ON Resistance
• Low Gate Charge
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• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
VDSS RDS(ON) (MAX) @ 4.5 A
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
500 V 0.52 Ω
Rating Symbol NDF11N50Z NDP11N50Z Unit
Drain−to−Source Voltage VDSS 500 V
N−Channel
Continuous Drain Current, ID 10.5 (Note 10.5 A
RqJC 2) D (2)

Continuous Drain Current ID 6.7 (Note 2) 6.7 A


TA = 100°C, RqJC
Pulsed Drain Current, IDM 42 (Note 2) 42 A
VGS @ 10 V G (1)
Power Dissipation, RqJC PD 36 145 W
(Note 1)
Gate−to−Source Voltage VGS ±30 V TO−220FP S (3)
Single Pulse Avalanche EAS 420 mJ CASE 221D
STYLE 1 MARKING
Energy, ID = 10 A
DIAGRAM
ESD (HBM) Vesd 4000 V
(JESD22−A114)
RMS Isolation Voltage VISO 4500 V
(t = 0.3 sec., R.H. ≤ 30%,
TA = 25°C) (Figure 14)
NDF11N50ZG
Peak Diode Recovery dv/dt 4.5 (Note 3) V/ns or
NDP11N50ZG
Continuous Source Cur- IS 10.5 A
AYWW
rent (Body Diode)
Gate Source
Maximum Temperature for TL 260 °C
TO−220
Soldering Leads
CASE 221A
Operating Junction and TJ, Tstg −55 to 150 °C STYLE 5
Storage Temperature Range
Drain
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended A = Location Code
Operating Conditions is not implied. Extended exposure to stresses above the
Y = Year
Recommended Operating Conditions may affect device reliability.
WW = Work Week
1. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq G = Pb−Free Package
[2 oz] including traces).
2. Limited by maximum junction temperature
3. Id ≤ 10.5 A, di/dt ≤ 200 A/ms, VDD ≤ BVDSS, TJ ≤ 150°C.

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.

© Semiconductor Components Industries, LLC, 2011 1 Publication Order Number:


January, 2011 − Rev. 1 NDF11N50Z/D
NDF11N50Z, NDP11N50Z

THERMAL RESISTANCE
Parameter Symbol NDF11N50Z NDP11N50Z Unit
Junction−to−Case (Drain) RqJC 3.4 0.9 °C/W
Junction−to−Ambient Steady State (Note 4) RqJA 50 50

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)


Characteristic Test Conditions Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage VGS = 0 V, ID = 1 mA BVDSS 500 V
Breakdown Voltage Temperature Reference to 25°C, DBVDSS/ 0.6 V/°C
Coefficient ID = 1 mA DTJ
Drain−to−Source Leakage Current 25°C IDSS 1 mA
VDS = 500 V, VGS = 0 V
125°C 50
Gate−to−Source Forward Leakage VGS = ±20 V IGSS ±10 mA
ON CHARACTERISTICS (Note 5)
Static Drain−to−Source VGS = 10 V, ID = 4.5 A RDS(on) 0.48 0.52 W
On−Resistance

Gate Threshold Voltage VDS = VGS, ID = 100 mA VGS(th) 3.0 4.5 V


Forward Transconductance VDS = 15 V, ID = 4.5 A gFS 7.7 S
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss 1375 pF
VDS = 25 V, VGS = 0 V,
Output Capacitance Coss 166
f = 1.0 MHz
Reverse Transfer Capacitance Crss 40
Total Gate Charge Qg 46 nC
Gate−to−Source Charge VDD = 250 V, ID = 10.5 A, Qgs 8.7
Gate−to−Drain (“Miller”) Charge VGS = 10 V Qgd 25
Plateau Voltage VGP 6.2 V
Gate Resistance Rg 1.4 W
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time td(on) 15 ns
Rise Time VDD = 250 V, ID = 10.5 A, tr 32
Turn−Off Delay Time VGS = 10 V, RG = 5 Ω td(off) 40
Fall Time tf 23

SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)


Diode Forward Voltage IS = 10.5 A, VGS = 0 V VSD 1.6 V
Reverse Recovery Time VGS = 0 V, VDD = 30 V trr 310 ns
Reverse Recovery Charge IS = 10.5 A, di/dt = 100 A/ms Qrr 2.5 mC
4. Insertion mounted
5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.

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NDF11N50Z, NDP11N50Z

TYPICAL CHARACTERISTICS

25 25
VDS = 25 V
VGS = 10 V
20 20

ID, DRAIN CURRENT (A)


ID, DRAIN CURRENT (A)

7.0 V

15 15
6.5 V

10 10
TJ = 25°C
6.0 V
TJ = 150°C
5 5
5.5 V TJ = −55°C
5.0 V
0 0
0 5 10 15 20 25 3 4 5 6 7 8 9 10

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)


Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

1.00 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 1.00


0.95 ID = 4.5 A 0.95 VGS = 10 V
0.90 TJ = 25°C 0.90 TJ = 25°C
0.85 0.85
0.80 0.80
0.75 0.75
0.70 0.70
0.65 0.65
0.60 0.60
0.55 0.55
0.50 0.50
0.45 0.45
0.40 0.40
5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 0 1 2 3 4 5 6 7 8 9 10 11
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Region versus Gate−to−Source Figure 4. On−Resistance versus Drain
Voltage Current and Gate Voltage
BVDSS, NORMALIZED BREAKDOWN VOLTAGE (V)

2.75 1.15
RDS(on), DRAIN−TO−SOURCE RESISTANCE

ID = 4.5 A ID = 1 mA
2.50
VGS = 10 V
2.25 1.10
2.00
(NORMALIZED)

1.75 1.05
1.50
1.25 1.00
1.00
0.75 0.95
0.50
0.25 0.90
−50 −25 0 25 50 75 100 125 150 50 25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with Figure 6. BVDSS Variation with Temperature
Temperature

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NDF11N50Z, NDP11N50Z

TYPICAL CHARACTERISTICS

100 3250
3000 TJ = 25°C
2750 VGS = 0 V
Ciss f = 1 MHz
2500

C, CAPACITANCE (pF)
Coss
IDSS, LEAKAGE (mA)

2250
10
TJ = 150°C 2000
Crss
1750
1500
1250
1 TJ = 125°C 1000
750
500
250
0.1 0
0 50 100 150 200 250 300 350 400 450 500 0.01 0.1 1 10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Drain−to−Source Leakage Current Figure 8. Capacitance Variation
versus Voltage

15 300

VDS, DRAIN−TO−SOURCE VOLTAGE (V)


VGS, GATE−TO−SOURCE VOLTAGE (V)

14 QT
13
250
12
11 VDS
10 200
9 VGS
8 QGS
QGD 150
7
6
5 100
4 VDS = 250 V
3 ID = 10.5 A 50
2 TJ = 25°C
1
0 0
0 5 10 15 20 25 30 35 40 45 50
Qg, TOTAL GATE CHARGE (nC)
Figure 9. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge

1000 20
VDD = 250 V
ID = 10.5 A 10
IS, SOURCE CURRENT (A)

VGS = 10 V td(off)
100 tr
tf
t, TIME (ns)

td(on) TJ = 150°C

1 25°C
125°C
10
−55°C

1 0.1
1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Resistive Switching Time Variation Figure 11. Diode Forward Voltage versus
versus Gate Resistance Current

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NDF11N50Z, NDP11N50Z

TYPICAL CHARACTERISTICS

100
VGS v 30 V
1 ms 100 ms 10 ms
SINGLE PULSE 10 ms

ID, DRAIN CURRENT (A)


10 TC = 25°C
dc

0.1 RDS(on) LIMIT


THERMAL LIMIT
PACKAGE LIMIT

0.01
0.1 1 10 100 1000
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area NDF11N50Z

10

DUTY CYCLE = 0.5

1 0.2
R(t) (C/W)

0.1
0.05

0.1 0.02

0.01 RqJC = 3.4°C/W


SINGLE PULSE Steady State
0.01
1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 1E+03

PULSE TIME (s)


Figure 13. Thermal Impedance (Junction−to−Case) for NDF11N50Z

LEADS

HEATSINK

0.110″ MIN

Figure 14. Isolation Test Diagram


Measurement made between leads and heatsink with all leads shorted together.

*For additional mounting information, please download the ON Semiconductor


Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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NDF11N50Z, NDP11N50Z

ORDERING INFORMATION
Order Number Package Shipping
NDF11N50ZG TO−220FP 50 Units / Rail
(Pb−Free)
NDP11N50ZG TO−220AB 50 Units / Rail
(Pb−Free) (In Development)

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NDF11N50Z, NDP11N50Z

PACKAGE DIMENSIONS

TO−220FP
CASE 221D−03
ISSUE K
NOTES:
−T− SEATING
PLANE 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
−B− C 2. CONTROLLING DIMENSION: INCH
F 3. 221D-01 THRU 221D-02 OBSOLETE, NEW
S STANDARD 221D-03.

Q U INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A A 0.617 0.635 15.67 16.12
B 0.392 0.419 9.96 10.63
1 2 3 C 0.177 0.193 4.50 4.90
D 0.024 0.039 0.60 1.00
H F 0.116 0.129 2.95 3.28
K −Y− G 0.100 BSC 2.54 BSC
H 0.118 0.135 3.00 3.43
J 0.018 0.025 0.45 0.63
K 0.503 0.541 12.78 13.73
G J L 0.048 0.058 1.23 1.47
N 0.200 BSC 5.08 BSC
N R Q 0.122 0.138 3.10 3.50
L R 0.099 0.117 2.51 2.96
S 0.092 0.113 2.34 2.87
D 3 PL U 0.239 0.271 6.06 6.88

0.25 (0.010) M B M Y STYLE 1:


PIN 1. GATE
2. DRAIN
3. SOURCE

TO−220
CASE 221A−09
ISSUE AF NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−T− PLANE 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
T S
ALLOWED.

INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
1 2 3 U D 0.025 0.035 0.64 0.88
F 0.142 0.161 3.61 4.09
H G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
K J 0.014 0.025 0.36 0.64
Z K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G U 0.000 0.050 0.00 1.27
D V
Z
0.045
---
---
0.080
1.15
---
---
2.04
N STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN

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