BASIC ELECTRONICS ASSIGNMENT

TRANSISTOR ACTION
Transistors of both types (p-n-p and n-p-n) behave exactly the same way except change in biasing and
majority carriers. In p-n-p transistors the conduction is by holes whereas in n-p-n transistors
conduction is by electrons. However, n-p-n type transistors are preferred because of their better high
frequency response. Basic connections and biasing of p-n-p and n-p-n type transistors are shown in
figs. 5.53(a) and 5.53(b) respectively.

Fig. 5.53
Let us consider an n-p-n transistor, which is in common use, for discussion. The biasing is shown in
fig. 5.53 (b). The forward bias causes the electrons in the n-type emitter to flow towards the base. This
constitutes the emitter current IE. The electrons while flowing through the p-type base, tend to combine
with holes. As the base is lightly doped and very thin, therefore, only few electrons (say 1 to 10%)
combine with holes to constitute base current IB. The remainder (90 to 99%) cross over into the
collector region to constitute collector current IC. Thus the emitter current IE is equal to the sum of
collector current IC and base current IB i.e. IE = IB+ IC.

DIFFERENCE BETWEEN JFET, BJT AND MOSFET

A BJT is a bipolar transistor in the sense that there are two types of charge carriers in them. In npn
trnsistor the primary carrier in the hole and in pnp the electron. In JFET there is only one type of
carrier. In n-channel case the carrier is elctron and in p-channel hole. So JFET is unipolar in that
sense.

BJT is a current controlled device as the input current is amplified subjected to the mode of operation.
For example in CE mode the input current is base current and output current is emmiter current which
is (β+1) times amplified. The drop of this current across the load voltage is the output signal voltage.
But a JFET is a voltage controlled device. The chalnnel conductance is determned by the voltage
supplied at the gate terminal and depending on this the drain current flows.

MOSFET is one kind of voltage controlled device like JFET where there is metal oxide in between the
gate and the channel. Depending on the voltage supplied on the gate terminal a voltahe is 'induced' by
electrostatic induction in the isolated channel. The channel therefore behaves as a capacitor where
due to the voltage some charges are induced. These charges shrink or extend the effective chanel
width. For example in Enhancement Mosfet the channel width effectively increases and in depletion
mosfet it decreases. Depending on this the drain to source current increases or decreases.
• COMMON-EMITTER CONFIGURATION:
o Input characteristics:

Same as in the case of common-base configuration, the EB junction

of the common-emitter configuration can also be considered as a
forward biased diode, the current-voltage characteristics is similar to
that of a diode:

The collector-emitter voltage has little effect on .

o Output characteristics:

The CB junction is reverse biased, the

current depends on the

current . When , , the current caused by the

minority carriers crossing the pn-junctions. When is increased,

is correspondingly increased by fold (e.g., ).