RJK5020DPK

Silicon N Channel MOS FET

High Speed Power Switching
REJ03G1263-0100
Rev.1.00
Sep. 23, 2005

Features
• Low on-resistance
• Low leakage current
• High speed switching

Outline

RENESAS Package code: PRSS0004ZE-A

(Package name: TO-3P)
D

1. Gate
2. Drain (Flange)
G
3. Source

S
1
2
3

Absolute Maximum Ratings

(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 500 V
Gate to source voltage VGSS ±30 V
Drain current ID 40 A
Drain peak current ID (pulse)Note1 120 A
Body-drain diode reverse drain current IDR 40 A
Body-drain diode reverse drain peak current IDR (pulse)Note1 120 A
Avalanche current IAPNote3 12.5 A
Avalanche energy EARNote3 8.6 mJ
Channel dissipation Pch Note2 200 W
Channel to case thermal impedance θch-c 0.625 °C/W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C

Rev.1.00 Sep. 23, 2005 page 1 of 6

RJK5020DPK

Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V(BR)DSS 500 — — V ID = 10 mA, VGS = 0
Zero gate voltage drain current IDSS — — 1 µA VDS = 500 V, VGS = 0
Gate to source leak current IGSS — — ±0.1 µA VGS = ±30 V, VDS = 0
Gate to source cutoff voltage VGS(off) 3.0 — 4.5 V VDS = 10 V, ID = 1 mA
Static drain to source on state RDS(on) — 0.102 0.115 Ω ID = 20 A, VGS = 10 V Note4
resistance
Input capacitance Ciss — 5150 — pF VDS = 25 V
Output capacitance Coss — 525 — pF VGS = 0
Reverse transfer capacitance Crss — 55 — pF f = 1 MHz
Turn-on delay time td(on) — 52 — ns ID = 20 A
Rise time tr — 115 — ns VGS = 10 V
Turn-off delay time td(off) — 180 — ns RL = 12.5 Ω
Fall time tf — 125 — ns Rg = 10 Ω
Total gate charge Qg — 126 — nC VDD = 400 V
Gate to source charge Qgs — 26 — nC VGS = 10 V
Gate to drain charge Qgd — 54 — nC ID = 40 A
Body-drain diode forward voltage VDF — 0.90 1.50 V IF = 40 A, VGS = 0 Note4
Body-drain diode reverse recovery time trr — 450 — ns IF = 40 A, VGS = 0
diF/dt = 100 A/µs
Notes: 4. Pulse test

Rev.1.00 Sep. 23, 2005 page 2 of 6

RJK5020DPK

Main Characteristics

Power vs. Temperature Derating Maximum Safe Operation Area

400 1000
Pch (W)

300
100

ID (A)
300 10
1m µs
30 s 10
0µ
s
Channel Dissipation

10

Drain Current
200 3 Operation in this
1 area is limited by
RDS(on)
PW = 10 ms
0.3
100 (1shot)
0.1
DC Operation
0.03 (Tc = 25°C)
Ta = 25°C
0.01
0 50 100 150 200 1 3 10 30 100 300 1000

Case Temperature Tc (°C) Drain to Source Voltage VDS (V)

Typical Output Characteristics Typical Transfer Characteristics

50 100
10 V 5.5 V VDS = 10 V
5.7 V 50
7V Pulse Test
40
ID (A)

ID (A)

5.3 V 20
10
30
5
Drain Current

Drain Current

2
20
VGS = 4.9 V 1
0.5 Tc = 75°C
10 25°C
0.2 −25°C
Pulse Test
0.1
0 4 8 12 16 20 0 2 4 6 8 10

Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)

Static Drain to Source on State Resistance Static Drain to Source on State Resistance
vs. Drain Current vs. Temperature
Static Drain to Source on State Resistance
RDS(on) (Ω)

1 0.5
Drain to Source on State Resistance
RDS(on) (Ω)

VGS = 10 V VGS = 10 V Pulse Test

0.5
0.4

0.2 ID = 40 A
0.3
0.1 20 A

0.2
0.05
10 A
0.1
0.02
Pulse Test
0.01 0
1 3 10 30 100 300 1000 −25 0 25 50 75 100 125 150

Drain Current ID (A) Case Temperature Tc (°C)

Rev.1.00 Sep. 23, 2005 page 3 of 6

RJK5020DPK

Body-Drain Diode Reverse Typical Capacitance vs.

Recovery Time Drain to Source Voltage
1000 100000
Reverse Recovery Time trr (ns) VGS = 0
500
30000 f = 1 MHz

Capacitance C (pF)
200 10000
Ciss
100
3000
50
1000
20
300 Coss
10
5 100
di / dt = 100 A / µs Crss
2 30
VGS = 0, Ta = 25°C
1 10
1 3 10 30 100 300 1000 0 100 200 300

Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V)

Reverse Drain Current vs.

Dynamic Input Characteristics Source to Drain Voltage
800 16 50
VDS (V)

VGS
VGS (V)

ID = 40 A
IDR (A)
VDD = 100 V 40
600 250 V 12
400 V
Drain to Source Voltage

Gate to Source Voltage

Reverse Drain Current

30
VDS
400 8
20

200 VDD = 400 V 4 5, 10 V

10 VGS = 0, -5 V
250 V
100 V
0 Pulse Test
0 40 80 120 160 200 0 0.4 0.8 1.2 1.6 2.0

Gate Charge Qg (nC) Source to Drain Voltage VSD (V)

Gate to Source Cutoff Voltage

vs. Case Temperature
5
VDS = 10 V
Gate to Source Cutoff Voltage
VGS(off) (V)

4 ID = 10 mA

1 mA
3

2
0.1 mA

0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)

Rev.1.00 Sep. 23, 2005 page 4 of 6

RJK5020DPK

Normalized Transient Thermal Impedance vs. Pulse Width

Normalized Transient Thermal Impedance γ s (t)

3

Tc = 25°C
1
D=1

0.5
0.3

0.2
θ ch – c(t) = γ s (t) • θ ch – c
0.1 0.1 θ ch – c = 0.625°C/W, Tc = 25°C

0.05 PW
PDM D=
T
0.03 0.02
1 lse PW
0.0 t pu T
ho
1s
0.01
10 µ 100 µ 1m 10 m 100 m 1 10

Pulse Width PW (s)

Switching Time Test Circuit Waveform

Vin Monitor Vout

90%
Monitor
D.U.T.
RL Vin 10%
10 Ω
Vout 10% 10%
Vin VDD
10 V = 250 V
90% 90%

td(on) tr td(off) tf

Rev.1.00 Sep. 23, 2005 page 5 of 6

RJK5020DPK

Package Dimensions
JEITA Package Code RENESAS Code Package Name MASS[Typ.]
SC-65 PRSS0004ZE-A TO-3P / TO-3PV 5.0g
Unit: mm

5.0 ± 0.3
15.6 ± 0.3 4.8 ± 0.2
φ3.2 ± 0.2 1.5

1.0
0.5

19.9 ± 0.2
14.9 ± 0.2

0.3
2.0
1.6

1.4 Max 2.0

2.8

18.0 ± 0.5

1.0 ± 0.2 0.6 ± 0.2

3.6 0.9
1.0

5.45 ± 0.5 5.45 ± 0.5

Ordering Information
Part Name Quantity Shipping Container
RJK5020DPK-E 30 pcs Plastic magazine
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.

Rev.1.00 Sep. 23, 2005 page 6 of 6

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