ELECTRONICS MASTERY 2

1. Calculate the temperature coefficient in %/° C of a 10-V nominal Zener diode at 25° C if the nominal voltage is 10.2 V at
100° C.
A. 0.0238 B. 0.0251 C. 0.0267 D. 0.0321

2. An 8.2 V zener has a resistance of 5Ω. The actual voltage across its terminals when the current is 25 mA is
A. 8.2 V B. 125 mV C. 8.325 V D. 8.075 V

3. Which element dictates the maximum level of source voltage?

A. VZ B. IZM C. IZ D. None of the above

4. Determine the peak value of the current through the load resistor.

A. 2.325 mA B. 5 mA C. 1.25 mA D. 0 mA

5. Determine the peak value of the output waveform.

A. 25 V B. 15 V C. –25 V D. –15 V

6. Determine ID2.

A. 6.061 mA B. 0.7 mA C. 3.393 mA D. 3.571 mA

7. Determine V2.

A. 3.201 V B. 0 V C. 4.3 V D. 1.371 V

8. Calculate IL and IZ.

A. 2 mA, 0 mA B. 4 mA, 2 mA C. 2 mA, 2 mA D. 2 mA, 4 mA

9. A silicon (PN) junction at a temperature of 20°C has a reverse saturation current of 10 pico Ampere. The reverse
saturation current at 40°C for the same bias is approximately.
A. 30 pA B. 40 pA C. 50 pA D. 60 pA

10. A particular green LED emits light of wavelength 5490, Å, the energy bandgap of the semiconductor material used there
is .. h = 6.6 x 10-34 J sec.
A. 2.26 eV B. 1.98 eV C. 1.17 eV D. 0.74 eV

11. Calculate the resistivity of n-type semiconductor from the following data, Density of holes = 5 x 1012 cm-3. Density of
electrons = 8 x 1013 cm-3, mobility of conduction electron = 2.3 x 104 cm2/ V-sec and mobility of holes = 100 cm2/V-sec.
A. 0.43 Ω-m B. 0.34 Ω-m C. 0.42 Ω-m D. 0.24 Ω-m

12. The threshold voltage of an n-channel enhancement mode MOSFET is 0.5 when the device is biased at a gate voltage of
3V. Pinch off would occur at a drain voltage of
A. 1.5 V B. 2.5 V C. 3.5 V D. 4.5 V

13. The intrinsic carrier concentration of silicon sample at 300 K is 1.5 x 1016/m3. If after doping, the number of majority
carriers is 5 x 1020/m3. The minority carrier density is
A. 4.5 x 1011/m3 B. 3.33 x 104/m3 C. 5 x 1020/m3 D. 3 x 10-5/m3

14. If the drift velocity of holes under a field gradient of 100 V/m is 5 m/s, their mobility (in SI units) is
A. 0.05 B. 0.5 C. 50 D. 500

15. Determine the transistor capacitance of a diffused junction varicap diode of a reverse potential of 4.2 V if C(0) = 80 pf
and VT = 0.7 V
A. 42 pF B. 153.03 pF C. 13.33 pF D. Data inadequate

16. The 6 V zener diode shown in figure has zero zener resistance and a knee current of 5 mA. The minimum value of R, so
that the voltage across it does not fall below 6 V is

A. 1.2 kΩ B. 80 Ω C. 50 W D. 0

17. In a center tap full wave rectifier, 50 V is the peak voltage between the center tap and one of the ends of the secondary.
The maximum voltage across the reverse biased diode will be
A. 100 V B. 72 V C. 50 V D. 38 V
18. Refer to this figure. Determine the minimum value of IB that will produce saturation.

A. 0.25 mA B. 5.325 µA C. 1.065 µA D. 10.425 µA

19. For BJT transistor. The maximum power dissipation is specified as 350 mW if ambient temperature is 25°C. If ambient
temperature is 60°C the maximum power dissipation should be limited to about
A. 100 mW B. 250 mW C. 450 mW D. 600 mW

20. In a bipolar junction transistor adc = 0.98, ICO= 2 μA and IB = 15 μA. The collector current IC is
A. 635 µA B. 735 µA C. 835 µA D. 935 µA

21. Refer to this figure. If VCE = 0.2 V, IC(sat) is:

A. 0.05 mA B. 2.085 mA C. 1.065 mA D. 7.4 mA

22. Use this table of collector characteristics to calculate βac at VCE = 15 V and IB = 30 µA.

A. 100 B. 106 C. 50 D. 400

23. Calculate VCE.

 A. –4.52 V B. 4.52 V C. –9 V D. 9 V

24. Calculate the voltage across the 91 kΩ resistor.

A. 18 V B. 9.22 V C. 3.23 V D. None of the above

25. Determine the change in IC from 25ºC to 175ºC for the transistor defined in this table for fixed-bias with RB = 240
kΩ and β = 100 due to the S(VBE) stability factor.

A. 145.8 µA B. 145.8 nA C. –145.8 µA D. –145.8 nA

26. Determine the values of VCB and IB for this circuit.

A. 1.4 V, 59.7 µA B. –1.4 V, 59.7 µA C. –9.3 V, 3.58 µA D. 9.3 V, 3.58 µA

27. Calculate Rsat if VCE = 0.3 V.

A. 49.2 Ω B. 49.2 kΩ C. 49.2 mΩ D. 49.2 MΩ

28. Refer to the following figure. Calculate VGS at ID = 8 mA for k = 0.278 × 10–2 A/V2.
 A. 3.70 V B. 5.36 V C. 7.36 V D. 2.36 V

29. A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is
A. 100 B. 99 C. 1.01 D. 0.99

30. In a JFET avalanche breakdown occurs when VDS = 22 V and VGS = 0. If VGS = -1 V, the avalanche breakdown will occur at
A. VDS = 22 V C. VDS more than 22 V
B. VDS equal to or more than 22 V D. VDS less than 22 V

31. A self-biased n-channel JFET has a VD = 6 V. VGS = –3 V. Find the value of VDS.
A. –3 V B. –6 V C. 3 V D. 6 V

32. A JFET data sheet specifies VGS(off) = –6 V and IDSS = 8 mA. Find the value of ID when VGS = –3 V.
A. 2 mA B. 4 mA C. 8 mA D. none of the above

33. For a P-channel enhancement type MOSFET determine the drain current if K = 0.278 x 10-3A/V2, VGS = -4V, VT = -2V,
Voltage equivalent at 27°C = 26 mV.
A. 10 mA B. 1.11 mA C. 0.751 mA D. 46.98 mA

34. For an n-channel JFET with r0 = 10 kW, (VGs= 0 V, VP = - 6 V)the drain resistance rd at VGS= - 3 V is given by
A. 40 kΩ B. 2.5 kΩ C. 4.44 kW D. 120 kW

35. Calculate the value of VDS.

A. 0 V B. 8 V C. 4.75 V D. 16 V
36. For what value of RD is the voltage across VDS zero?

A. 2.400 kΩ B. 5.167 kΩ C. 6.167 kΩ D. 6.670 kΩ

37. For what value of ID is gm equal to 0.5 gm0?

A. 0 mA B. 0.25 IDSS C. 0.5 IDSS D. IDSS