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Code No: A109210203 Set No. 1

JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD
II B.Tech. I Sem., I Mid-Term Examinations, September – 2010
ELECTRONIC DEVICES AND CIRCUITS
Objective Exam
Name: ______________________________ Hall Ticket No. A
Answer All Questions. All Questions Carry Equal Marks. Time: 20 Min. Marks: 10.

I Choose the correct alternative:

1) The depletion region in an open circuited p-n junction contains___ [ ]

(a) Electrons (b) Holes
(c) uncovered immobile impurity ions (d) Neutralized impurity Atoms

2) Cut in voltage for Ge diode is approximately _______ V [ ]

(a) 0.2 (b) 0.6 (c) 1.1 v (d)1.0

D
3) The region in which both the collector junctions & emitter junctions are forward biased is _________
[ ]

4)
a) CB saturation region

Stability factor‘s’ in fixed bias CE amplifier is given by

a) β b) β+1 c)1/ β+1
R L
b)CB cut off region c) CB active region d) CC saturation region

d) 1/ β
[ ]

5)
O
As the magnitude of the reverse collector junction voltage increases, the effective base width_______
[ ]

6)
a) Increases b) decreases

U W c) remains unaffected

For ideal rectifier & filter circuits, %regulations must be _____

a) 1% b) 0.1% c) 5 % d) 0%
d) zero

[ ]

7)
a) Increase

N T
The reverse saturation current in a Pn diode
b) decreases c) remains constant with increase of bias
[
d) remains same
]

8)

9)
a) T3

a)Vm/√2
J
The reverse saturation current for a Si diode varies ( T is temperature)
b) T2

b) Vm
c) T d) T1.5

In full wave rectifier without filter, each diode experiences peak inverse voltage of
c) 2 Vm d) √2 Vm
[

[
]

10) The equation governing the law of the junction is __________ [ ]

a) pn(0) = exp(v / vT )nno b) np0=pno+ni
c) pn(0) = pn0 exp(v / vT − 1) d) np (0) = pn0 exp(v / vT − 1)

Cont….2

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Code No: A109210203 :2: Set No. 1

II Fill in the blanks:

11) The expression for dynamic emitter efficiency is _________

12) The straight line through the quiescent operating point having slope corresponding to the ac load
resistance is _________________

13) Filter circuit converts _____________ to __________

14) In a half wave rectifier, the lowest ripple frequency is ___________

15) In a bridge rectifier, peak inverse voltage per diode is _______

16)

17)
Relation between β1& β is ___________________

I CEO / I CBO
L D
R
= _______________________________-

O
18) Expression for‘s’ for self bias circuit is _____________

19) Stability factor for fixed bias is _________ if β =40.

20)
W
Expression for the diffusion capacitance cD in terms of Lp & Dp is _________

U
N T -oOo-

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Code No: A109210203 Set No. 2

JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD
II B.Tech. I Sem., I Mid-Term Examinations, September – 2010
ELECTRONIC DEVICES AND CIRCUITS
Objective Exam
Name: ______________________________ Hall Ticket No. A
Answer All Questions. All Questions Carry Equal Marks. Time: 20 Min. Marks: 10.

I Choose the correct alternative:

1) Stability factor‘s’ in fixed bias CE amplifier is given by [ ]

a) β b) β+1 c)1/ β+1 d) 1/ β

2) As the magnitude of the reverse collector junction voltage increases, the effective base width_______
[ ]
a) Increases b) decreases c) remains unaffected d) zero

3) For ideal rectifier & filter circuits, %regulations must be _____ [ ]

4)
a) 1% b) 0.1%

The reverse saturation current in a Pn diode

c) 5 % d) 0%

L D [ ]

R
a) Increase b) decreases c) remains constant with increase of bias d) remains same

5) The reverse saturation current for a Si diode varies ( T is temperature) [ ]

a) T3 b) T2 c) T

O d) T1.5

6)

7)
a)Vm/√2 b) Vm

U W
In full wave rectifier without filter, each diode experiences peak inverse voltage of
c) 2 Vm

The equation governing the law of the junction is __________

d) √2 Vm
[

[
]

T
a) pn(0) = exp(v / vT )nno
c) pn(0) = pn0 exp(v / vT − 1)

N
b) np0=pno+ni
d) np (0) = pn0 exp(v / vT − 1)

8)

9)
(a) Electrons
J
The depletion region in an open circuited p-n junction contains___

(c) uncovered immobile impurity ions

(b) Holes
(d) Neutralized impurity Atoms

Cut in voltage for Ge diode is approximately _______ V

[

[
]

]
(a) 0.2 (b) 0.6 (c) 1.1 v (d)1.0

10) The region in which both the collector junctions & emitter junctions are forward biased is _________
[ ]
a) CB saturation region b)CB cut off region c) CB active region d) CC saturation region

Cont….2

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Code No: A109210203 :2: Set No. 2

II Fill in the blanks:

1) In a half wave rectifier, the lowest ripple frequency is ___________

12) In a bridge rectifier, peak inverse voltage per diode is _______

13) Relation between β1& β is ___________________

14) I CEO / I CBO = _______________________________-

15) Expression for‘s’ for self bias circuit is _____________

16) Stability factor for fixed bias is _________ if β =40.

L D
17)

18)

19)
The expression for dynamic emitter efficiency is _________
R
Expression for the diffusion capacitance cD in terms of Lp & Dp is _________

O
The straight line through the quiescent operating point having slope corresponding to the ac load

20)
resistance is _________________

U W
Filter circuit converts _____________ to __________

N T -oOo-

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Code No: A109210203 Set No. 3

JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD
II B.Tech. I Sem., I Mid-Term Examinations, September – 2010
ELECTRONIC DEVICES AND CIRCUITS
Objective Exam
Name: ______________________________ Hall Ticket No. A
Answer All Questions. All Questions Carry Equal Marks. Time: 20 Min. Marks: 10.

I Choose the correct alternative:

1) For ideal rectifier & filter circuits, %regulations must be _____ [ ]

a) 1% b) 0.1% c) 5 % d) 0%

2) The reverse saturation current in a Pn diode [ ]

a) Increase b) decreases c) remains constant with increase of bias d) remains same

3) The reverse saturation current for a Si diode varies ( T is temperature) [ ]

a) T3 b) T2 c) T d) T1.5

4)
a)Vm/√2 b) Vm c) 2 Vm
L D
In full wave rectifier without filter, each diode experiences peak inverse voltage of
d) √2 Vm
[ ]

5)
a) pn(0) = exp(v / vT )nno
c) pn(0) = pn0 exp(v / vT − 1)
b) np0=pno+ni

O R
The equation governing the law of the junction is __________

d) np (0) = pn0 exp(v / vT − 1)

[ ]

6)
(a) Electrons
(c) uncovered immobile impurity ions

U W
The depletion region in an open circuited p-n junction contains___
(b) Holes
(d) Neutralized impurity Atoms
[ ]

7)
(a) 0.2

N T
Cut in voltage for Ge diode is approximately _______
(b) 0.6 (c) 1.1 v
V
(d)1.0
[ ]

8)

9)
J
The region in which both the collector junctions & emitter junctions are forward biased is _________

a) CB saturation region b)CB cut off region c) CB active region d) CC saturation region

Stability factor‘s’ in fixed bias CE amplifier is given by

[

[
]

]
a) β b) β+1 c)1/ β+1 d) 1/ β

10) As the magnitude of the reverse collector junction voltage increases, the effective base width_______
[ ]
a) Increases b) decreases c) remains unaffected d) zero

Cont….2

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Code No: A109210203 :2: Set No. 3

II Fill in the blanks:

11) Relation between β1& β is ___________________

12) I CEO / I CBO = _______________________________-

13) Expression for‘s’ for self bias circuit is _____________

14) Stability factor for fixed bias is _________ if β =40.

15) Expression for the diffusion capacitance cD in terms of Lp & Dp is _________

16)

17)
The expression for dynamic emitter efficiency is _________

L D
The straight line through the quiescent operating point having slope corresponding to the ac load

18)

19)
resistance is _________________

Filter circuit converts _____________ to __________

O R
In a half wave rectifier, the lowest ripple frequency is ___________

20)
W
In a bridge rectifier, peak inverse voltage per diode is _______

U
N T -oOo-

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Code No: A109210203 Set No. 4

JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD
II B.Tech. I Sem., I Mid-Term Examinations, September – 2010
ELECTRONIC DEVICES AND CIRCUITS
Objective Exam
Name: ______________________________ Hall Ticket No. A
Answer All Questions. All Questions Carry Equal Marks. Time: 20 Min. Marks: 10.

I Choose the correct alternative:

1) The reverse saturation current for a Si diode varies ( T is temperature) [ ]

a) T3 b) T2 c) T d) T1.5

2) In full wave rectifier without filter, each diode experiences peak inverse voltage of [ ]
a)Vm/√2 b) Vm c) 2 Vm d) √2 Vm

3) The equation governing the law of the junction is __________ [ ]

4)
a) pn(0) = exp(v / vT )nno
c) pn(0) = pn0 exp(v / vT − 1)
b) np0=pno+ni
d) np (0) = pn0 exp(v / vT − 1)

The depletion region in an open circuited p-n junction contains___

L D [ ]

5)
(a) Electrons
(c) uncovered immobile impurity ions
(b) Holes

Cut in voltage for Ge diode is approximately _______

O R
(d) Neutralized impurity Atoms

V [ ]

6)
(a) 0.2 (b) 0.6

U W (c) 1.1 v (d)1.0

The region in which both the collector junctions & emitter junctions are forward biased is _________
[ ]

7)
a) CB saturation region

a) β
N T b)CB cut off region c) CB active region d) CC saturation region

Stability factor‘s’ in fixed bias CE amplifier is given by

b) β+1 c)1/ β+1 d) 1/ β
[ ]

8)

a) Increases
J
As the magnitude of the reverse collector junction voltage increases, the effective base width_______

b) decreases c) remains unaffected d) zero

[ ]

9) For ideal rectifier & filter circuits, %regulations must be _____ [ ]

a) 1% b) 0.1% c) 5 % d) 0%

10) The reverse saturation current in a Pn diode [ ]

a) Increase b) decreases c) remains constant with increase of bias d) remains same

Cont….2

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Code No: A109210203 :2: Set No. 4

II Fill in the blanks:

11) Expression for‘s’ for self bias circuit is _____________

12) Stability factor for fixed bias is _________ if β =40.

13) Expression for the diffusion capacitance cD in terms of Lp & Dp is _________

14) The expression for dynamic emitter efficiency is _________

15) The straight line through the quiescent operating point having slope corresponding to the ac load
resistance is _________________

16)

17)
Filter circuit converts _____________ to __________

In a half wave rectifier, the lowest ripple frequency is ___________

L D
18)

19)
In a bridge rectifier, peak inverse voltage per diode is _______
1
Relation between β & β is ___________________
O R
20) I CEO / I CBO
W
= _______________________________-

U
N T -oOo-

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