SMD Type MOSFET

P-Channel MOSFET
SI4463BDY (KI4463BDY)

SOP-8

■ Features
● VDS (V) =-20V
● ID =-13.7 A (VGS =-10V)
1.50 0.15
● RDS(ON) ＜ 11mΩ (VGS =-10V)
● RDS(ON) ＜ 14mΩ (VGS =-4.5V)

+0.04
0.21 -0.02
● RDS(ON) ＜ 20mΩ (VGS =-2.5V) 1 Source 5 Drain
2 Source 6 Drain
3 Source 7 Drain
S 4 Gate 8 Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter Symbol 10 Secs Steady State Unit

Drain-Source Voltage VDS -20
V
Gate-Source Voltage VGS ±12
Ta = 25℃ -13.7 -9.8
Continuous Drain Current ID
Ta = 70℃ -11.1 -7.9 A
Pulsed Drain Current IDM -50
Ta = 25℃ 3 1.5 W
Power Dissipation PD
Ta = 70℃ 1.9 0.95
Thermal Resistance.Junction- to-Ambient RthJA 42 84
℃/W
Thermal Resistance.Junction- to-Foot RthJF - 21
Junction Temperature TJ 150
℃
Junction Storage Temperature Range Tstg -55 to 150

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 SMD Type MOSFET

P-Channel MOSFET
SI4463BDY (KI4463BDY)
■ Electrical Characteristics Ta = 25℃

Parameter Symbol Test Conditions Min Typ Max Unit

Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -20 V
VDS=-20V, VGS=0V -1
Zero Gate Voltage Drain Current IDSS uA
VDS=-20V, VGS=0V, TJ=70℃ -10
Gate-Body leakage current IGSS VDS=0V, VGS=±12V ±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS ID=-250μA -0.6 -1.4 V
VGS=-10V, ID=-13.7A 11
Static Drain-Source On-Resistance (Note.1) RDS(On) VGS=-4.5V, ID=-12.3A 14 mΩ
VGS=-2.5V, ID=-5A 20
On state drain current ID(ON) VGS=-5V, VDS=-4.5V (Note.1) -30 A
Forward Transconductance gFS VDS=-10V, ID=-13.7A (Note.1) 44 S
Gate resistance Rg VGS=0V, VDS=0V, f=1MHz 2.7 Ω
Total Gate Charge Qg 37 56
Gate Source Charge Qgs VGS=-4.5V, VDS=-10V, ID=-13.7A 8.7 nC
Gate Drain Charge Qgd 11
Turn-On DelayTime td(on) 55
Turn-On Rise Time tr VDD = −10 V, RL = 10 Ω 90
Turn-Off DelayTime td(off) ID=−1 A, VGEN = −4.5 V, Rg = 6 Ω 170 ns
Turn-Off Fall Time tf 115
Body Diode Reverse Recovery Time trr IF=-2.3A, dI/dt=100A/μs 75
Maximum Body-Diode Continuous Current IS -2.7 A
Diode Forward Voltage VSD IS=-2.7A,VGS=0V (Note.1) -1.1 V

Note.1: Pulse test; pulse width ≤ 300us, duty cycle ≤ 2%.

■ Marking
4463B
Marking
KC****

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SMD Type MOSFET

P-Channel MOSFET
SI4463BDY (KI4463BDY)
■ Typical Characterisitics
Ou t p u t Ch ar ac t er i s t i c s Tr an s f er Ch ar ac t er i s t i c s
50 50

V GS = 10 thru 2.5 V
40 40
I D − Drain Current (A)

I D − Drain Current (A)

30 30

2 V
20 20
T C = 125 C

10 10
1.5 V 25 C
−55 C
0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5

VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

0.04 5000
)

4000
r DS(on) − On-Resistance (

C iss
C − Capacitance (pF)

0.03

3000

0.02
V GS = 2.5 V
2000
V GS = 4.5 V C oss
0.01
1000
V GS = 10 V
C rss

0.00 0
0 10 20 30 40 50 0 4 8 12 16 20

ID − Drain Current (A) VDS − Drain-to-Source Voltage (V)

Gate Charge On-Resistance vs. Junction T emperature

5 1.4
V DS = 10 V V GS = 10 V
V GS − Gate-to-Source Voltage (V)

I D = 13.7 A I D = 13.7 A
1.3
4
rDS(on) − On-Resiistance

1.2
3
(Normalized)

1.1

2
1.0

1
0.9

0 0.8
0 5 10 15 20 25 30 35 40 −50 −25 0 25 50 75 100 125 150
Qg − Total Gate Charge (nC) TJ − Junction Temperature ( C)

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 SMD Type MOSFET

P-Channel MOSFET
SI4463BDY (KI4463BDY)
■ Typical Characterisitics
Source-Drain Diode Forward V oltage On-Resistance vs. Gate-to-Source Voltage
50 0.05
ID = 5 A

0.04

)
I S − Source Current (A)

r DS(on) − On-Resistance (
T J = 150 C ID = 13.7 A
10 0.03

0.02

T J = 25 C
0.01

1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8
VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)
Threshold V oltage Single Pulse Power, Junction-to-Ambient
0.6 50

0.4 40
V GS(th) Variance (V)

I D = 250 A
0.2 30
Power (W)

0.0 20

−0.2 10

−0.4 . 0
−50 −25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
TJ − Temperature ( C) Time (sec)

Safe Operating Area

100
IDM Limited

rDS(on) Limited

10 P(t) = 0.001
I D − Drain Current (A)

P(t) = 0.01
ID(on)
1 Limited
P(t) = 0.1

P(t) = 1

T C = 25 C P(t) = 10
0.1 Single Pulse dc

BV DSS Limited
0.01
0.1 1 10 100
VDS − Drain-to-Source Voltage (V)

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SMD Type MOSFET

P-Channel MOSFET
SI4463BDY (KI4463BDY)
■ Typical Characterisitics

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2
Notes:
0.1
0.1 P DM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 70 C/W
3. TJM − TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10−4 10−3 10−2 10−1 1 10 100 600
Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Foot

2

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse

0.01
10−4 10−3 10−2 10−1 1 10
Square Wave Pulse Duration (sec)

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