1SS133

Diodes

Switching diode
1SS133

!Applications !External dimensions (Units : mm)

High speed switching
CATHODE BAND (YELLOW)
φ0.4±0.1

!Features
1) Glass sealed envelope. (MSD)
29.0±1.0 2.7±0.3 29.0±1.0 φ1.8±0.2
2) High speed. (trr=1.2ns Typ.)
3) High reliability. ROHM : MSD
EIAJ : −
JEDEC : DO-34

!Construction
Silicon epitaxial planar

!Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit
Peak reverse voltage VRM 90 V
DC reverse voltage VR 80 V
Peak forward current IFM 400 mA
Mean rectifying current IO 130 mA
Surge current (1s) Isurge 600 mA
Power dissipation P 300 mW
Junction temperature Tj 175 °C
Storage temperature Tstg −65~+175 °C

!Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage VF − − 1.2 V IF=100mA
Reverse current IR − − 0.5 µA VR=80V
Capacitance between terminals CT − − 2 pF VR=0.5V, f=1MHz
Reverse recovery time trr − − 4 ns VR=6V, IF=10mA, RL=50Ω
 1SS133
Diodes

!Electrical characteristics curves (Ta=25°C)

100 3.0

CAPACITANCE BETWEEN TERMINALS : CT(pF)

50 f=1MHz
3000 100˚C 2.5
FORWARD CURRENT : IF (mA)

REVERSE CURRENT : IR (nA)

20 1000
70˚C 2.0
10
300
5 50˚C 1.5
100
2
30 Ta=25˚C 1.0
˚C
5˚C
˚C

1
Ta=25˚C
Ta=−25
Ta=75
Ta=12

10 0.5
0.5

3
0.2 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100 120 0 5 10 15 20 25 30
FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V)

Fig. 1 Forward characteristics Fig. 2 Reverse characteristics Fig. 3 Capacitance between

terminals characteristics

3 10
REVERSE RECOVERY TIME : trr (ns)

PULSE
VR=6V 5 Single pulse
SURGE CURRENT : Isurge (A)

Irr=1/10IR

2 2

1 0.5

0.2

0 0.1
0 10 20 30 0.01 0.1 1 10 100 1000
FORWARD CURRENT : IF (mA) PULSE WIDTH : Tw (ms)

Fig. 4 Reverse recovery time Fig.5 Surge current characteristics

characteristics

0.01µF D.U.T.

5kΩ
PULSE GENERATOR SAMPLING
50Ω
OUTPUT 50Ω OSCILLOSCOPE

Fig. 6 Reverse recovery time (trr) measurement circuit