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Name:__________________________________ EE227 Final last 4 SSID_________
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1 Draw Schematics for a logarithm circuit. Vout = ln(Vin). (10 points)

2 Find the value of R and C1 in a PLL loop filter (One in series with the resistor) assuming
Kvco=66MHz/V, Ipump=0.1ma. Assume Wn=100Khz, and the Vco divider is 23. Assume
the damping factor is 0.7 (10 points)

3 Design a VM type Schmitt trigger with trip points of 1.2V and 1.3V. Assume all transistor
have L=0.24u. Assume 1st Wni=.48u. Assume all L’s are 0.24u. Show devices on
schematic. (10 points)

4 Given a PLL with 12 bit Y and Z dividers, and a restriction on Z that it can range from 4005
to 4009. Find the best value of Y and Z (Smallest error) to generate a VCO frequency of
14.775MHz when FREF is 6.277MHz. Compute all results to 1Hz resolution. Assume Z is
the VCO divider (10 points)

5 Draw the schematics for a relaxation oscillator. (10 points)

6 Design a 3 bit R-2R D/A converter. Show schematics. Assume R is 10k ohms. (Transistor
sizes not required) (10 points)

7 What is a Thermometer code? Why is it important to D/A design? (10 points)

8 Why are guard rings used in I/O design. Draw the latch up devices, and show their origin
on a chip view. (10 points)

9 How are high speed buffers implemented? How is Vcm established? Show example
schematics. (10 points)

10 Design a 3 transistor voltage divider providing Vdd/3 and 3/4Vdd using only N transistors.
Calculate device sizes assuming 100ua flows in the divider. (10 points)

A A
Name:__________________________________ EE227 Final last 4 SSID_________
A 4 A

Exam is closed book, no scratch paper. Handy Equations for the Exam
VT  VT 0     2 F  VSB  2F 
1
R
k (VGS  VT )
ID  k'
W
2L

2(VGS  VT )VDS  VDS
2
 VIL = VT + 1/(kRL)
k
2
 
2(VGS  VT )VDS  VDS
2
 CJ  area
C BS , D   CJSW  perim
VGS  VT , VBS
1
VDS  VGS  VT PB
CGS  width  CGSO
 
k '   N COX  N OX CGD  width  CGDO
tOX
CGB  width  CGBO
W
k  k'
L KN
V DD  VTP  VTN
k
I D  (VGS  VT ) 2 KP
2 VM 
KN
k
1
ID  (VGS  VT ) 2 (1  VDS ) KP
2
VOH dVout/dVin = -1  2VTN 1  1.5V DD  2VTN  C L
VOL dVout/dVin = -1 kN    ln 
  V DD  VTN 
2
V DD  VTN   0.5V DD  t PHL
VM Vout=Vin
 ox   2VPN 1  1.5VDD  2VTP   CL
Cox  kP    ln  
tox 
 DDV  VTP  2
 VDD  VTP   0.5VDD   t PLH

kT/q  0.026V @ 27º C


K NI
GC   F ( Substrate )   F ( Gate ) V DD  VTN
K NF
QB  2 Si qN A  2 F V ID 
K NI
1
Q B QOX K NF
VT   GC  2 F  
C OX C OX
K PI
Q Q Q  QB 0 V DD  VTP 
  GC  2 F  B 0  OX  B K PF
C OX C OX C OX V I LI 
K PI
1 1
  2q Si N A K PF
C OX
2
 (300) WNF  VTRIG  VTN  WNI
 (T )   
 T / 300 a LNF  VDD  VTRIG  LNI
VOL  VDD/(kRL(VDD-VT)+1) 2
WPF  VDD  VTP  VTRIG  WPI
 
1
LPF  VTRIG  LPI
R
k  (VGS  VT )  V DS 

A A
Name:__________________________________ EE227 Final last 4 SSID_________
A 5 A

2C L VTN  V1  V DD   VD 
t fall   I D  I S  e T  1
k N V DD  VTN 
2
 
 
CL  2V  2VTN  V 2  kT
ln DD  T 
k N V DD  VTN   V2  q

C  T~26mv at room temperature


ln EXT  VD

 C in  I D  I S e T
j
ln 
 D p Pno Dn N po 
C   I S  qA  
t P ,total  A' ln EXT   L L 
 C in  ln   p n 
2
 BEST  e  2.718 ni
Pno 
ND
W W
 ni 2
L 2 L1 N po 
NA
W W
 D  Diffusion rate
L3 L4
2 L  Length of P / N
 W  W  
      
  L 1  L  2 
I bias  2
R k'
 VGS VTHN 
W q  
N ' kT 
I D  I D0  e
L
H  WP  S  W N
kT
k'  0.26mV @ room _ temp
H  N WR  S  DWR q
k 'P
H S
WR  CJ  AD
k 'N Cd , bot 
D MJ
k 'P  Vdb 
1  
 PB 
CJSW  PD
Cd , side  MJSW
 Vdb 
 1  
 PBSW 

Vdd=2.5V K’n=138u K’p=51u Vtn=0.52V Vtp=-0.58V L=1u


PROCESS PARAMETERS N+ACTV P+ACTV POLY N+BLK PLY+BLK MTL1 MTL2 UNITS
Sheet Resistance 4.2 3.3 3.8 59.6 184.0 0.07 0.07 ohms/sq
Contact Resistance 5.5 4.8 4.7 2.92 ohms
Gate Oxide Thickness 57
angstrom

PROCESS PARAMETERS MTL3 MTL4 MTL5 N_WELL UNITS


Sheet Resistance 0.07 0.07 0.03 1055 ohms/sq
Contact Resistance 5.61 8.19 11.17 ohms

A A
Name:__________________________________ EE227 Final last 4 SSID_________
A 6 A

KF  I DAF
f  COX
'
 L2
v12/ f 
gm
8kT
2  I d
q
2
vtherm 
gm

gm0
gm( f ) 
1  j  Zs  Cgb  Cgs  Cgd 
id gm  vgs

is vgs  j  Cgb  Cgs  Cgd 
B 'W Vgs  Vt 
fT 
2LCgs

dI ds
gm  Vds  C
dVgs
g m (linear )  Vds
g m ( sat )   Vgs  Vt   2 I D
I DS  const
 
Gm   ids  gm  2 I D
  vgs VGS  const

Ipump
Kpd 
2

Kpdi * Kvco
Wn 
NC1

Wn
  * R * C1
2

A A
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Answer sheet:
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#6

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#8

#9

#10
11 Draw schematics for a voltage doubler using NMOS transistors and capacitors. (10 points)

12 Find the value of Ipump and R in a PLL loop filter assuming C1 is 100pf (One in series with
the resistor) assuming Kvco=76MHz/V, Assume Wn=200Khz, and the Vco divider is 5.
Assume the damping factor is 0.7 (10 points)

13 Design a VM type Schmitt trigger with trip points of 1.3V and 1.5V. Assume all transistor
have L=0.24u. Assume 1st N device has Wni=.72u. Assume all L’s are 0.24u. Show
devices on schematic. (10 points)

14 Given a PLL with 12 bit Y and Z dividers, and a restriction on Z that it can range from 4005
to 4009. Find the best value of Y and Z (Smallest error) to generate a VCO frequency of
21.314MHz when FREF is 19.3MHz. Compute all results to 1Hz resolution. Assume Z is the
VCO divider (10 points)

15 Draw the schematics for a source coupled cross coupled oscillator. (10 points)

16 Design a 3 bit flash A/D converter. Draw a block diagram. (Transistor sizes not required)
(10 points)

17 What is a pipelined D/A converter? Draw a block diagram. (10 points)

18 Design a three transistor voltage divider providing Vdd/2 and 3/4Vdd using only P
transistors. Calculate device sizes assuming 70ua flows in the divider. (10 points)

19 Show schematics for a two wire high speed driver. Include the impedance matching
feedback loop. (10 points)

20 How is large cross over current eliminated in IO design? Show a representative schematic
(10 points)
Exam is closed book, no scratch paper. Handy Equations for the Exam
VT  VT 0     2 F  VSB  2F 
1
R
k  (VGS  VT )  V DS 
ID  k'
W
2L

2(VGS  VT )VDS  VDS
2

1
R
k

 2(VGS  VT )VDS  VDS
2
2
 k (VGS  VT )
VIL = VT + 1/(kRL)
VGS  VT ,
VDS  VGS  VT CJ  area
C BS , D   CJSW  perim
VBS
 N  OX 1
k '   N COX  PB
tOX
CGS  width  CGSO
W
k  k' CGD  width  CGDO
L
CGB  width  CGBO
k
ID  (VGS  VT ) 2
2
KN
k V DD  VTP  VTN
ID  (VGS  VT ) 2 (1  VDS ) KP
2 VM 
KN
VOH dVout/dVin = -1 1
VOL dVout/dVin = -1 KP
VM Vout=Vin
 2VTN 1  1.5V DD  2VTN  C L
 ox kN    ln 
Cox 
tox   V DD  VTN 
2
V DD  VTN   0.5V DD  t PHL

  2VPN 1  1.5VDD  2VTP   CL


kP    ln  
kT/q  0.026V @ 27º C 
 DDV  VTP  2
 VDD  VTP   0.5VDD   t PLH
GC   F ( Substrate )   F ( Gate )

QB  2 Si qN A  2 F
K NI
V DD  VTN
Q B QOX K NF
VT   GC  2 F   V ID 
C OX C OX K NI
1
Q B 0 QOX Q B  Q B 0 K NF
  GC  2 F   
C OX C OX C OX
K PI
1 V DD  VTP 
  2q Si N A K PF
C OX V I LI 
K PI
 (300) 1
 (T )  K PF
 T / 300 a
VOL  VDD/(kRL(VDD-VT)+1)
2
WNF  VTRIG  VTN  WNI  VD 
  I D  I S  e T  1
LNF  VDD  VTRIG  LNI 



2
WPF  VDD  VTP  VTRIG  WPI kT
  T 
LPF  VTRIG  LPI
q
T~26mv at room temperature
2C L VTN  V1  V DD 
t fall   VD

k N V DD  VTN  I D  I S e T
2

CL  2V  2VTN  V 2   D p Pno Dn N po 
ln DD 
k N V DD  VTN   V2  I S  qA  
 L L 
 p n 
C  ni 2
ln EXT  Pno 
 C in  ND
j
ln  ni 2
N po 
C   NA
t P ,total  A' ln EXT 
 C in  ln  D  Diffusion rate
 BEST  e  2.718 L  Length of P / N

W W

L 2 L1
 VGS VTHN 
W W W q  
 I D  I D0  e N ' kT 
L3 L4 L
 W 
2 kT
W    0.26mV @ room _ temp
       q
  L 1  L  2 
I bias 
R 2k '
CJ  AD
Cd , bot  MJ
H  WP  S  W N  Vdb 
1  
 PB 
k 'N
H WR  S  DWR CJSW  PD
k 'P Cd , side  MJSW
 Vdb 
H S 1  
WR   PBSW 
k 'N
D
k 'P
Vdd=2.5V K’n=138u K’p=51u Vtn=0.52V Vtp=-0.58V L=1u
PROCESS PARAMETERS N+ACTV P+ACTV POLY N+BLK PLY+BLK MTL1 MTL2 UNITS
Sheet Resistance 4.2 3.3 3.8 59.6 184.0 0.07 0.07 ohms/sq
Contact Resistance 5.5 4.8 4.7 2.92 ohms
Gate Oxide Thickness 57
angstrom

PROCESS PARAMETERS MTL3 MTL4 MTL5 N_WELL UNITS


Sheet Resistance 0.07 0.07 0.03 1055 ohms/sq
Contact Resistance 5.61 8.19 11.17 ohms
KF  I DAF
f  COX
'
 L2
v12/ f 
gm
8kT
2  I d
q
2
vtherm 
gm

gm0
gm( f ) 
1  j  Zs  Cgb  Cgs  Cgd 
id gm  vgs

is vgs  j  Cgb  Cgs  Cgd 
B 'W Vgs  Vt 
fT 
2LCgs

dI ds
gm  Vds  C
dVgs
g m (linear )  Vds
g m ( sat )   Vgs  Vt   2 I D
I DS  const
 
Gm   ids  gm  2 I D
  vgs VGS  const

Ipump
Kpd 
2

Kpdi * Kvco
Wn 
NC1

Wn
  * R * C1
2
This is the only piece of paper you will turn in. Please plan to fit all answers on this page!

Answer sheet:
#1

#2

#3

#4

#5
#6

#7

#8

#9

#10
21 Draw schematics for a circuit who’s delta V output is the square of the input delta V. (10
points)

22 Find the value of R and C1 in a PLL loop filter (One in series with the resistor) assuming
Kvco=96MHz/V, Ipump=0.2ma. Assume Wn=70Khz, and the Vco divider is 12. Assume the
damping factor is 0.8 (10 points)

23 Design a VM type Schmitt trigger with trip points of 1.22V and 1.54V. Assume all transistor
have L=0.24u. Assume 1st Wpi=72u. Assume all L’s are 0.24u. Show devices on
schematic. (10 points)

24 Given a PLL with 12 bit Y and Z dividers, and a restriction on Z that it can range from 4005
to 4009. Find the best value of Y and Z (Smallest error) to generate a VCO frequency of
7.2MHz when FREF is 15.35MHz. Compute all results to 1Hz resolution. Assume Z is the
VCO divider (10 points)

25 Draw the schematics for a Schmitt trigger oscillator. (10 points)

26 Design a 3 bit current mode D/A converter. Show schematics. Transistor sizes not
required. (10 points)

27 What does monotonic increasing imply? Why is it important? (10 points)

28 What is the algorithm used in an algorithmic A/D converter? Explain how it works. (10
points)

29 Why must high speed busses be terminated in characteristic impedance? (10 points)

30 Design a 3 transistor voltage divider providing Vdd/3 and 3/4Vdd using only N transistors.
Calculate device sizes assuming 100ua flows in the divider. (10 points)
Exam is closed book, no scratch paper. Handy Equations for the Exam
VT  VT 0     2 F  VSB  2F 
1
R
k  (VGS  VT )  V DS 
ID  k'
W
2L

2(VGS  VT )VDS  VDS
2

1
R
k

 2(VGS  VT )VDS  VDS
2
2
 k (VGS  VT )
VIL = VT + 1/(kRL)
VGS  VT ,
VDS  VGS  VT CJ  area
C BS , D   CJSW  perim
VBS
 N  OX 1
k '   N COX  PB
tOX
CGS  width  CGSO
W
k  k' CGD  width  CGDO
L
CGB  width  CGBO
k
ID  (VGS  VT ) 2
2
KN
k V DD  VTP  VTN
ID  (VGS  VT ) 2 (1  VDS ) KP
2 VM 
KN
VOH dVout/dVin = -1 1
VOL dVout/dVin = -1 KP
VM Vout=Vin
 2VTN 1  1.5V DD  2VTN  C L
 ox kN    ln 
Cox 
tox   V DD  VTN 
2
V DD  VTN   0.5V DD  t PHL

  2VPN 1  1.5VDD  2VTP   CL


kP    ln  
kT/q  0.026V @ 27º C 
 DDV  VTP  2
 VDD  VTP   0.5VDD   t PLH
GC   F ( Substrate )   F ( Gate )

QB  2 Si qN A  2 F
K NI
V DD  VTN
Q B QOX K NF
VT   GC  2 F   V ID 
C OX C OX K NI
1
Q B 0 QOX Q B  Q B 0 K NF
  GC  2 F   
C OX C OX C OX
K PI
1 V DD  VTP 
  2q Si N A K PF
C OX V I LI 
K PI
 (300) 1
 (T )  K PF
 T / 300 a
VOL  VDD/(kRL(VDD-VT)+1)
2
WNF  VTRIG  VTN  WNI  VD 
  I D  I S  e T  1
LNF  VDD  VTRIG  LNI 



2
WPF  VDD  VTP  VTRIG  WPI kT
  T 
LPF  VTRIG  LPI
q
T~26mv at room temperature
2C L VTN  V1  V DD 
t fall   VD

k N V DD  VTN  I D  I S e T
2

CL  2V  2VTN  V 2   D p Pno Dn N po 
ln DD 
k N V DD  VTN   V2  I S  qA  
 L L 
 p n 
C  ni 2
ln EXT  Pno 
 C in  ND
j
ln  ni 2
N po 
C   NA
t P ,total  A' ln EXT 
 C in  ln  D  Diffusion rate
 BEST  e  2.718 L  Length of P / N

W W

L 2 L1
 VGS VTHN 
W W W q  
 I D  I D0  e N ' kT 
L3 L4 L
 W 
2 kT
W    0.26mV @ room _ temp
       q
  L 1  L  2 
I bias 
R 2k '
CJ  AD
Cd , bot  MJ
H  WP  S  W N  Vdb 
1  
 PB 
k 'N
H WR  S  DWR CJSW  PD
k 'P Cd , side  MJSW
 Vdb 
H S 1  
WR   PBSW 
k 'N
D
k 'P
Vdd=2.5V K’n=138u K’p=51u Vtn=0.52V Vtp=-0.58V L=1u
PROCESS PARAMETERS N+ACTV P+ACTV POLY N+BLK PLY+BLK MTL1 MTL2 UNITS
Sheet Resistance 4.2 3.3 3.8 59.6 184.0 0.07 0.07 ohms/sq
Contact Resistance 5.5 4.8 4.7 2.92 ohms
Gate Oxide Thickness 57
angstrom

PROCESS PARAMETERS MTL3 MTL4 MTL5 N_WELL UNITS


Sheet Resistance 0.07 0.07 0.03 1055 ohms/sq
Contact Resistance 5.61 8.19 11.17 ohms
KF  I DAF
f  COX
'
 L2
v12/ f 
gm
8kT
2  I d
q
2
vtherm 
gm

gm0
gm( f ) 
1  j  Zs  Cgb  Cgs  Cgd 
id gm  vgs

is vgs  j  Cgb  Cgs  Cgd 
B 'W Vgs  Vt 
fT 
2LCgs

dI ds
gm  Vds  C
dVgs
g m (linear )  Vds
g m ( sat )   Vgs  Vt   2 I D
I DS  const
 
Gm   ids  gm  2 I D
  vgs VGS  const

Ipump
Kpd 
2

Kpdi * Kvco
Wn 
NC1

Wn
  * R * C1
2
This is the only piece of paper you will turn in. Please plan to fit all answers on this page!

Answer sheet:
#1

#2

#3

#4

#5
#6

#7

#8

#9

#10
31 Draw schematics for a Schmitt trigger relaxation oscillator. (10 points)

32 Find the value of R and C1 in a PLL loop filter (One in series with the resistor) assuming
Kvco=96MHz/V, Ipump=0.2ma. Assume Wn=100Khz, and the Vco divider is 3. Assume the
damping factor is 0.8 (10 points)

33 Design a VM type Schmitt trigger with trip points of 1.4V and 1.5V. Assume all transistor
have L=0.24u. Assume device is symmetrical, and Wn=4u. Assume all L’s are 0.24u.
Show devices on schematic. (10 points)

34 Given a PLL with 12 bit Y and Z dividers, and a restriction on Z that it can range from 4005
to 4009. Find the best value of Y and Z (Smallest error) to generate a VCO frequency of
14.571MHz when FREF is 17.150MHz. Compute all results to 1Hz resolution. Assume Z is
the VCO divider (10 points)

35 Draw the schematics for a current 7 stage starved oscillator with start/stop control. (10
points)

36 Design a 3 bit resistor string DAC. Draw schematics. Do not show transistor sizes. (10
points)

37 What is the algorithm used in an algorithmic D/A converter? Explain how it works. (10
points)

38 How is large cross over current eliminated in I/O design? (10 points)

39 Draw the schematics for a 2 wire high speed transmitter. Include the Vcm feedback loop.
(10 points)

40 Design a 3 transistor voltage divider providing Vdd/2 and 3/4Vdd using only P transistors.
Calculate device sizes assuming 80ua flows in the divider. (10 points)
Exam is closed book, no scratch paper. Handy Equations for the Exam
VT  VT 0     2 F  VSB  2F 
1
R
k  (VGS  VT )  V DS 
ID  k'
W
2L

2(VGS  VT )VDS  VDS
2

1
R
k

 2(VGS  VT )VDS  VDS
2
2
 k (VGS  VT )
VIL = VT + 1/(kRL)
VGS  VT ,
VDS  VGS  VT CJ  area
C BS , D   CJSW  perim
VBS
 N  OX 1
k '   N COX  PB
tOX
CGS  width  CGSO
W
k  k' CGD  width  CGDO
L
CGB  width  CGBO
k
ID  (VGS  VT ) 2
2
KN
k V DD  VTP  VTN
ID  (VGS  VT ) 2 (1  VDS ) KP
2 VM 
KN
VOH dVout/dVin = -1 1
VOL dVout/dVin = -1 KP
VM Vout=Vin
 2VTN 1  1.5V DD  2VTN  C L
 ox kN    ln 
Cox 
tox   V DD  VTN 
2
V DD  VTN   0.5V DD  t PHL

  2VPN 1  1.5VDD  2VTP   CL


kP    ln  
kT/q  0.026V @ 27º C 
 DDV  VTP  2
 VDD  VTP   0.5VDD   t PLH
GC   F ( Substrate )   F ( Gate )

QB  2 Si qN A  2 F
K NI
V DD  VTN
Q B QOX K NF
VT   GC  2 F   V ID 
C OX C OX K NI
1
Q B 0 QOX Q B  Q B 0 K NF
  GC  2 F   
C OX C OX C OX
K PI
1 V DD  VTP 
  2q Si N A K PF
C OX V I LI 
K PI
 (300) 1
 (T )  K PF
 T / 300 a
VOL  VDD/(kRL(VDD-VT)+1)
2
WNF  VTRIG  VTN  WNI  VD 
  I D  I S  e T  1
LNF  VDD  VTRIG  LNI 



2
WPF  VDD  VTP  VTRIG  WPI kT
  T 
LPF  VTRIG  LPI
q
T~26mv at room temperature
2C L VTN  V1  V DD 
t fall   VD

k N V DD  VTN  I D  I S e T
2

CL  2V  2VTN  V 2   D p Pno Dn N po 
ln DD 
k N V DD  VTN   V2  I S  qA  
 L L 
 p n 
C  ni 2
ln EXT  Pno 
 C in  ND
j
ln  ni 2
N po 
C   NA
t P ,total  A' ln EXT 
 C in  ln  D  Diffusion rate
 BEST  e  2.718 L  Length of P / N

W W

L 2 L1
 VGS VTHN 
W W W q  
 I D  I D0  e N ' kT 
L3 L4 L
 W 
2 kT
W    0.26mV @ room _ temp
       q
  L 1  L  2 
I bias 
R 2k '
CJ  AD
Cd , bot  MJ
H  WP  S  W N  Vdb 
1  
 PB 
k 'N
H WR  S  DWR CJSW  PD
k 'P Cd , side  MJSW
 Vdb 
H S 1  
WR   PBSW 
k 'N
D
k 'P
Vdd=2.5V K’n=138u K’p=51u Vtn=0.52V Vtp=-0.58V L=1u
PROCESS PARAMETERS N+ACTV P+ACTV POLY N+BLK PLY+BLK MTL1 MTL2 UNITS
Sheet Resistance 4.2 3.3 3.8 59.6 184.0 0.07 0.07 ohms/sq
Contact Resistance 5.5 4.8 4.7 2.92 ohms
Gate Oxide Thickness 57
angstrom

PROCESS PARAMETERS MTL3 MTL4 MTL5 N_WELL UNITS


Sheet Resistance 0.07 0.07 0.03 1055 ohms/sq
Contact Resistance 5.61 8.19 11.17 ohms
KF  I DAF dI ds
gm  Vds  C
f  COX
'
 L2 dVgs
v12/ f 
gm g m (linear )  Vds
8kT g m ( sat )   Vgs  Vt   2 I D
2  I d
q
2
vtherm   
I DS  const
gm Gm   ids  gm  2 I D
  vgs VGS  const
gm0
gm( f ) 
1  j  Zs  Cgb  Cgs  Cgd  Kpd 
Ipump
2
id gm  vgs

is vgs  j  Cgb  Cgs  Cgd  Wn 
Kpdi * Kvco
B 'W Vgs  Vt  NC1
fT 
2LCgs Wn
  * R * C1
2

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