CHARACTERIZING SENSITIVE CMOS RADIATION

DETECTOR
Hank Javan, University of Memphis, TN

Key words: CMOS, Semiconductor, Radiation, Detector

ABSTRACT operate on the principle of electron-hole pair

Semiconductor sensors cover a wide
range of electromagnetic spectrum for detecting
nuclear-particle radiation. The most important
properties of these detectors are their sensitivity
Le. their ability to low level radiation, charge
transport, efficiency (electron-hole pair
creation), and their response time. This article
addresses the sensitivity of these devices.
Following methods can increase the sensitivity of
any electronic sensors:
generation and charge transport mechanism. A
good semiconductor sensor device should have high
detector efficiency, large collecting area, low
leakage current, and be economically feasible[l]. A
cross section of a silicon-on-insulator (SOI)
photodiode and one DepMOS-DepFET for X-ray
detection are shown as a reference in figure l a and
l b in order to assist the reader to understand the
current technology used in this field [2].

1. Proper selection of the material with

respect to the desired radiation
detection, i.e matching the energy gap
of the device, E,, to the energy of
incoming radiation.
2. Application of proper process
technology, such as CMOS, BiCMOS,
etc.
3. Fabrication technology Le. using
proper doping, substrate, etc.
4. Finally design of external circuitry.

This paper reports the investigation of the

circuitry of a newly developed CMOS a particle
radiation detector and characterization of its
sensitivity. Also discusses the effect of external
power supply connection on the sensitivity,
derivation of analytical expression for the
sensitivity and compares the theoretical ..SI
I 4
prediction with the experimental values. In
addition, the effect of radiation on the threshold
voltage is discussed as well as an increase in
sensitivity due to radiation. Finally, a method is
suggested to obtain an optimum performance. @)
Fig. 1- (a) A cross section of photo diode
I. INTRODUCTION
@) Cross section of a nuclear radiation detector
Semiconductor detectors such as
photoconductor, photodiode, and phototransistor
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 Among the different technologies, MOS and reduction of threshold voltage due to radiation is
CMOS method offer an excellent choice for nuclear examined.
particle detection. This is due to their small leakage
current, high input impedance and excellent low

R2E
noise figure. In addition, these circuits have a real Q
estate advantage for IC technology. Figure 2 shows
the circuit of a newly developed CMOS D type flip-
flop radiation detector for a particle.
B
S

ID0

ENABLE a

Fig. 2- Circuitry of a D-weflip-flop

used for nuclear radiation detection using CMOS Fig.3- (a) AR-S flip-flop using nor @es
@) Implementation of D-flip-flop using R-S ff
The heart of this circuit is the incorporation
of D type flip-flop used as a single event radiation
detector. Flip-flops are made of logic gates simply 11-CIRCUITDESCRIPTION
by use of feedback circuits. The NAND gates are
transistor inverters. One such a flip-flop, called R-S Referring to figure 2, radiation is detected
flip-flop is shown in figure 3(a) with its by D-type flip-flop at its input. This flip-flop is
implementation to obtain a D type flip-flop in figure made of CMOS technology to increase its
3@). sensitivity and to reduce noise, as discussed in the
previous section. This flip-flop will be activated
D type flip-flop can be used for single event upon irradiation and assertion of the Enable line.
counter (SEC) either by direct radiation through the Charge is transferred to the next CMOS by the
windows or via the input circuitry as shown in inter-coupling capacitor to the last stage.
figure. The problem with such a circuit is the need
for high sensitivity under low radiation condition. The original circuit uses one power supply
Circuit shown in figure 2 is the implementation of V d d as shown. However it is shown experimentally
such a flip-flop in cascade-cascode mode to obtain that isolating V d d and using a separate supply for
the single event count by shifting the data from the the last stage has increased the sensitivity of this
input to the output. In the following the operation detector as shown and will be discussed below. We
of this circuit is discussed first, then the possibility now develop an analytical expression to show that
of increasing its sensitivity by modifying the power this method of power supply connection can in fact
supply connection is investigated. Finally the increase the sensitivity of this detector. In addition,

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 ~

by providing another expression for the threshold compared with the experimental data [3]. Equation
voltage, V, will be shown that this configuration 4 indicates some important factors, which can effect
also reduces the threshold voltage, thus further the sensitivity of this type of radiation detector.
increasing sensitivity. First it is seen that the sensitivity, 4,depends on
transistor parameters such as k, and &% these
111-EFFECT OF OFFSET VOLTAGE parameters are function of device geometry, thus the
sensitivity of the device depends largely on device
The drain current of an Enhancement geometry. Second it is seen that sensitivity is
MOSFET is given by [4]; inversely related to the intracapacitance of the
device. Finally it is seen that offset voltage, V,,T
can increase the sensitivity as was suggested in
reference [3].
. .. .
In this equation k is a function of the geometry of
the channel, its value is about 0.3mAlv2, v d is the
drain supply voltage, and V, is the threshold
voltage, the minimum voltage required to turn on
the FET. The value of VI depends on the dielectric
material used for the gate insulation. Its value
typically ranges fiom 1 to 3 volt [5]. However,
research is under way to decrease this value to
0.5V. Referring to Figure 2, the last transistor is
isolated from the power supply Vdd and is
connected to V,,T. It is important to note that this
voltage, V,,T is not the usual offset voltage we use
to balance the transistor output to zero in the
absence of input. This voltage is primarily used to
increase the sensitivity as will be shown below.
The gate of this MOS is connected to the intemal
capacitor of the previous stage; thus V, in the above
equation can be expressed as;
V,=V,=Q/C= LAtlC (2)
In this equation C is the capacitance value of the
intracapacitor, Q is the charge due to radiation, I is
the resulting current, and At is the event time. We
have used At instead of dt to indicate that this is a
discrete event. Returning to the last MOS which is
connected to V,,T, since this transistor is on, its
current 4 can be written as
Id = Vod %n (3)
%. is the on resistance of the transistor. Use of %.
is justified since the charge transfer or the radiation
effect is considered to be single event, and thus the
transistor is operated as a switch, being either ON
or OFF. Inserting equation (3) and (2) in ( 1 ) we
obtain for the Upset Rate;
l/At=(~/.I(v,n/k%")+Vt)C (4) Fig 4- Effect of Offset Voltage on the sensitivity of
D-type radiation detector.
The plot ( I / At) of this equation for the parameter (a) Experimental [3] (b)Theoretical, this paper, k
values assumed are shown in Figure 4, and are =O.SmA/?, &"=lo Ohms, V, = lSV, C=SpF

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 Also shown in Figures 5 (a ,b) the effects of drain IV. EFFECT OF Voff ON THRESHOLD VOLTAGE
on resistor, Ron , and the transistor physical and
geometrical parameter, k, on the Upset Rate. In the Equation (1) is repeated
next section we will drive an expression for
threshold voltage, Vt in terms of offset voltage, V,E. Id = k ( v, - Vt)*
It will be shown that the threshold voltage is
decreased due to radiation. In terms of this new Radiation creates charge on the intercoupled
effective voltage, the optimum value for offset capacitor. The voltage arising as a result of this
voltage will be determined. radiation has opposite polarity to that of built-in
threshold voltage VI. Thus it will be subtracted
from it. Therefore, if we incorporate the charge
associated with this radiation and subtract it from
VI, we obtain:

I d = k [ v g - (vt - Q/c)lz (5)

Expressing 4 in term of offset voltage, V,s and

FET on resistance, %., we obtain;

VI= (2V,-dV,tf/R,,,.k) (6)

This equation is plotted in Figure 6 for the

parameter values given in Figure 4. It is seen from
this equation that the gate voltage has now a new
effective value given in the parentheses. Using this
equation we can obtain an expression for the
optimum offset voltage in terms of gate voltage and
transistor parameters as following;

V,E =4 k %, V: (7)

@)
Fig.5- (a) Effect of drain resistance ,Ron, (b) Effect
of transistor physical/geometrical parameter, k
On the Upset Rates Fig. 6- Effect of V,E on threshold Voltage

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 V. CONCLUSION BIOGRAPHY

Our article has indicated that isolation of Hank Javan

power supply of the last stage ffom the rest of the Department of Engineering Technology
H e m College of Engineering
circuit and applying an independent drain voltage to University of Memphis
the last stage: Memphis, TN 38152
e-mail: hiavan@memuhis.edu
1. Can increase the sensitivity of D-type h.iavan@ieee.ore
radiation detector mentioned in this
Hank javan received his B.S.E.E., M.S.E.E., and Ph.D. in
paper. 1965, 1970, and 1980 respectively. Since his graduation he
2. Can reduce the threshold voltage, thus has worked for several companies, has taught in several
causing further increase in sensitivity. universities, and has held fellowships with NASA and NAVY.
Dr. Javan is principle author of over twenty referee articles
In addition our expression for sensitivity equation 6 published in intemational journals. He is a senior member of
IEEE and holds Professional Engineering License from State
suggest that transistor parameter such as k, and bn of Tennessee. Currently he is an Assistant Professor with
can play an important rule in determining the University of Memphis.
sensitivity of CMOS radiation detector device. We
have also established an optimum value for the
offset voltage as given by equation (7).

REFERENCES

[l]. J.Fraden, “AIP Hankbook of Modem Sensors“,

American Institute of Physics, 1993, pp 471-481.

[2]. S.M.Sze, ‘Semiconductor Sensors, P.292, 321,

John Wiley & Sons, Inc. 1994.

[3]. M.G.Buehler, B.R.Blaes, G.A.Soli, and R.H.

Nixon, “Bench-Level Characterization of a CMOS
Standard Cell D-latch Using Alpha-particle
Sensitive Test Circuit”, JPL & NASA Case No.
NPD-18614, JPL LogNo. 8147.

[4]. C.J.Savant, M.S.Roden, and G. Carpenter,

“Electronic Design”, 2nd edition,
BenjamidCummings Publishing , Inc, P. 185, 1991.

[ 5 ] . R B.Yarbrough, “Electrical Engineering

Reference Manual, 5th edition, Professional
Publications, Inc, Belmont, CA, 94002, p8-49.

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