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SEMICONDUCTOR TECHNICAL DATA by 2N5460/D

   
P–Channel — Depletion
2 DRAIN

3
 
GATE

1 SOURCE
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain – Gate Voltage VDG 40 Vdc
Reverse Gate – Source Voltage VGSR 40 Vdc
Forward Gate Current IG(f) 10 mAdc 1
2
3
Total Device Dissipation @ TA = 25°C PD 350 mW
Derate above 25°C 2.8 mW/°C
CASE 29–04, STYLE 7
Junction Temperature Range TJ – 65 to +135 °C TO–92 (TO–226AA)
Storage Channel Temperature Range Tstg – 65 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate – Source Breakdown Voltage V(BR)GSS 40 — — Vdc
(IG = 10 µAdc, VDS = 0) 2N5460, 2N5461, 2N5462
Gate Reverse Current IGSS
(VGS = 20 Vdc, VDS = 0) 2N5460, 2N5461, 2N5462 — — 5.0 nAdc
(VGS = 30 Vdc, VDS = 0)
(VGS = 20 Vdc, VDS = 0, TA = 100°C) 2N5460, 2N5461, 2N5462 — — 1.0 µAdc
(VGS = 30 Vdc, VDS = 0, TA = 100°C)
Gate – Source Cutoff Voltage 2N5460 VGS(off) 0.75 — 6.0 Vdc
(VDS = 15 Vdc, ID = 1.0 µAdc) 2N5461 1.0 — 7.5
2N5462 1.8 — 9.0
Gate – Source Voltage VGS Vdc
(VDS = 15 Vdc, ID = 0.1 mAdc) 2N5460 0.5 — 4.0
(VDS = 15 Vdc, ID = 0.2 mAdc) 2N5461 0.8 — 4.5
(VDS = 15 Vdc, ID = 0.4 mAdc) 2N5462 1.5 — 6.0
ON CHARACTERISTICS
Zero – Gate –Voltage Drain Current 2N5460 IDSS – 1.0 — – 5.0 mAdc
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) 2N5461 – 2.0 — – 9.0
2N5462 – 4.0 — – 16
SMALL– SIGNAL CHARACTERISTICS
Forward Transfer Admittance 2N5460 yfs 1000 — 4000 mmhos
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) 2N5461 1500 — 5000
2N5462 2000 — 6000
Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) yos — — 75 mmhos
Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss — 5.0 7.0 pF
Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Crss — 1.0 2.0 pF
FUNCTIONAL CHARACTERISTICS
Noise Figure NF — 1.0 2.5 dB
(VDS = 15 Vdc, VGS = 0, RG = 1.0 Megohm, f = 100 Hz, BW = 1.0 Hz)
Equivalent Short–Circuit Input Noise Voltage en — 60 115 nVń ǸHz
(VDS = 15 Vdc, VGS = 0, f = 100 Hz, BW = 1.0 Hz)

Motorola Small–Signal Transistors, FETs and Diodes Device Data 1

 Motorola, Inc. 1997

  
DRAIN CURRENT versus GATE FORWARD TRANSFER ADMITTANCE
SOURCE VOLTAGE versus DRAIN CURRENT

Yfs FORWARD TRANSFER ADMITTANCE (m mhos)

4.0 4000
VDS = 15 V
3.5 3000

2000
I D, DRAIN CURRENT (mA)

3.0

2.5
TA = – 55°C 1000
2.0
700
1.5 25°C
125°C 500
1.0
300 VDS = 15 V
0.5
f = 1.0 kHz
0 200
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 4.0
VGS, GATE–SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (mA)

Figure 1. VGS(off) = 2.0 Volts Figure 4. VGS(off) = 2.0 Volts

Yfs FORWARD TRANSFER ADMITTANCE (m mhos)

10 10000
9.0 VDS = 15 V 7000
8.0
5000
I D, DRAIN CURRENT (mA)

7.0 TA = – 55°C

6.0 25°C 3000

5.0 125°C
2000
4.0
3.0
1000
2.0
700 VDS = 15 V
1.0
f = 1.0 kHz
0 500
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0
VGS, GATE–SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (mA)

Figure 2. VGS(off) = 4.0 Volts Figure 5. VGS(off) = 4.0 Volts

Yfs FORWARD TRANSFER ADMITTANCE (m mhos)

16 10000
VDS = 15 V
14 7000

5000
I D, DRAIN CURRENT (mA)

12

10 TA = – 55°C
3000
8.0 25°C
2000
125°C
6.0

4.0 1000
2.0 VDS = 15 V
700
f = 1.0 kHz
0 500
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
VGS, GATE–SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (mA)

Figure 3. VGS(off) = 5.0 Volts Figure 6. VGS(off) = 5.0 Volts

2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

 
  
1000 10
700 VDS = 15 V f = 1.0 MHz
9.0
r oss , OUTPUT RESISTANCE (k ohms)
500 f = 1.0 kHz VGS = 0
8.0
300

C, CAPACITANCE (pF)
7.0
200
IDSS = 3.0 mA 6.0
Ciss
100 5.0
70 4.0
6.0 mA
50
10 mA 3.0
30
2.0 Coss
20
1.0
Crss
10 0
0.1 0.2 0.5 1.0 2.0 5.0 10 0 10 20 30 40
ID, DRAIN CURRENT (mA) VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

Figure 7. Output Resistance Figure 8. Capacitance versus

versus Drain Current Drain–Source Voltage

5.0 10
VDS = 15 V 9.0 VDS = 15 V
VGS = 0 VGS = 0
4.0 8.0
RG = 1.0 Megohm f = 100 Hz
NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

7.0
3.0 6.0
5.0
2.0 4.0
3.0
1.0 2.0
1.0
0 0
10 20 30 50 100 200 300 500 1000 2000 3000 10,000 1.0 10 100 1000 10,000
f, FREQUENCY (Hz) RS, SOURCE RESISTANCE (k Ohms)

Figure 9. Noise Figure versus Frequency Figure 10. Noise Figure versus
Source Resistance

vi COMMON SOURCE
Crss y PARAMETERS FOR FREQUENCIES
BELOW 30 MHz

Ciss ross Coss | yfs | vi yis = jω Ciss

yos = jω Cosp * + 1/ross
yfs = yfs |
yrs = –jω Crss

* Cosp is Coss in parallel with Series Combination of Ciss and Crss.

NOTE:
1. Graphical data is presented for dc conditions. Tabular
data is given for pulsed conditions (Pulse Width = 630 ms,
Duty Cycle = 10%).

Figure 11. Equivalent Low Frequency Circuit

Motorola Small–Signal Transistors, FETs and Diodes Device Data 3


  
PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A B
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R 4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
P MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
L
SEATING F
PLANE K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
X X D D 0.016 0.022 0.41 0.55
G F 0.016 0.019 0.41 0.48
G 0.045 0.055 1.15 1.39
H J H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
V C K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
SECTION X–X N 0.080 0.105 2.04 2.66
1 N P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
N V 0.135 ––– 3.43 –––

STYLE 7:
CASE 029–04 PIN 1. SOURCE
2. DRAIN
(TO–226AA) 3. GATE
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4 ◊ Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N5460/D