BPW41N

Vishay Telefunken

Silicon PIN Photodiode

Description
BPW41N is a high speed and high sensitive PIN photo-
diode in a flat side view plastic package.
The epoxy package itself is an IR filter, spectrally
matched to GaAs or GaAs on GaAlAs IR emitters
(l p = 950 nm).
The large active area combined with a flat case gives
a high sensitivity at a wide viewing angle.

Features
D Large radiant sensitive area (A=7.5 mm2)
D Wide angle of half sensitivity ϕ = ± 65°
D High radiant sensitivity 94 8480

D Fast response times

D Small junction capacitance
D Plastic case with IR filter (l=950 nm)
D Suitable for near infrared radiation

Applications
High speed photo detector

Absolute Maximum Ratings

Tamb = 25_C
Parameter Test Conditions Symbol Value Unit
Reverse Voltage VR 60 V
Power Dissipation Tamb x 25 °C PV 215 mW
Junction Temperature Tj 100 °C
Storage Temperature Range Tstg –55...+100 °C
Soldering Temperature t x5s Tsd 260 °C
Thermal Resistance Junction/Ambient RthJA 350 K/W

Document Number 81522 www.vishay.com

Rev. 2, 20-May-99 1 (5)
BPW41N
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter Test Conditions Symbol Min Typ Max Unit
Breakdown Voltage IR = 100 mA, E = 0 V(BR) 60 V
Reverse Dark Current VR = 10 V, E = 0 Iro 2 30 nA
Diode Capacitance VR = 0 V, f = 1 MHz, E = 0 CD 70 pF
VR = 3 V, f = 1 MHz, E = 0 CD 25 40 pF
Open Circuit Voltage Ee = 1 mW/cm2, l = 950 nm Vo 350 mV
Temp. Coefficient of Vo Ee = 1 mW/cm2, l = 950 nm TKVo –2.6 mV/K
Short Circuit Current Ee = 1 mW/cm2, l = 950 nm Ik 38 mA
Temp. Coefficient of Ik Ee = 1 mW/cm2, l = 950 nm TKIk 0.1 %/K
Reverse Light Current Ee = 1 mW/cm2, Ira 43 45 mA
l = 950 nm, VR = 5 V
Angle of Half Sensitivity ϕ ±65 deg
Wavelength of Peak Sensitivity lp 950 nm
Range of Spectral Bandwidth l0.5 870...1050 nm
Noise Equivalent Power VR = 10 V, l = 950 nm NEP 4x10–14 W/√ Hz
Rise Time VR = 10 V, RL = 1k W, tr 100 ns
l = 820 nm
Fall Time VR = 10 V, RL = 1k W, tf 100 ns
l = 820 nm

Typical Characteristics (Tamb = 25_C unless otherwise specified)

1000 1.4
I ra rel – Relative Reverse Light Current
I ro – Reverse Dark Current ( nA )

1.2 VR=5V
100
l=950nm

1.0

10
0.8

VR=10V
1 0.6
20 40 60 80 100 0 20 40 60 80 100
94 8403 Tamb – Ambient Temperature ( °C ) 94 8409 Tamb – Ambient Temperature ( °C )

Figure 1. Reverse Dark Current vs. Ambient Temperature Figure 2. Relative Reverse Light Current vs.
Ambient Temperature

www.vishay.com Document Number 81522

2 (5) Rev. 2, 20-May-99
 BPW41N
Vishay Telefunken

1000 1.2

S ( l ) rel – Relative Spectral Sensitivity

Ira – Reverse Light Current ( m A )

1.0
100
0.8

10 0.6

VR=5V
0.4
l=950nm
1
0.2

0.1 0
0.01 0.1 1 10 750 850 950 1050 1150
94 8414 Ee – Irradiance ( mW / cm2 ) 94 8408 l – Wavelength ( nm )

Figure 3. Reverse Light Current vs. Irradiance Figure 6. Relative Spectral Sensitivity vs. Wavelength
0° 10 20
100 ° ° 30°
1 mW/cm2
Ira – Reverse Light Current ( m A )

0.5 mW/cm2 S rel – Relative Sensitivity

40°
l=950nm
1.0
0.2 mW/cm2
10 0.9 50°
0.1 mW/cm2
0.8 60°
0.05 mW/cm2
70°
0.7
80°
0.02 mW/cm2
1
0.1 1 10 100 0.6 0.4 0.2 0 0.2 0.4 0.6
94 8415 VR – Reverse Voltage ( V ) 94 8406

Figure 4. Reverse Light Current vs. Reverse Voltage Figure 7. Relative Radiant Sensitivity vs.
Angular Displacement

80
E=0
CD – Diode Capacitance ( pF )

f=1MHz
60

40

20

0
0.1 1 10 100
94 8407 VR – Reverse Voltage ( V )

Figure 5. Diode Capacitance vs. Reverse Voltage

Document Number 81522 www.vishay.com

Rev. 2, 20-May-99 3 (5)
BPW41N
Vishay Telefunken
Dimensions in mm

96 12195

www.vishay.com Document Number 81522

4 (5) Rev. 2, 20-May-99
 BPW41N
Vishay Telefunken
Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).

The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

Document Number 81522 www.vishay.com

Rev. 2, 20-May-99 5 (5)