DATA SHEET

MOS FIELD EFFECT TRANSISTOR

3SK131
RF AMP. FOR VHF TV TUNER
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR
4PIN MINI MOLD

FEATURES PACKAGE DIMENSIONS

(Unit: mm)
• Suitable for use as RF amplifier in VHF TV tuner.
+0.2
• Low Crss : 0.05 pF TYP. 2.8 −0.3

0.4 −0.05

0.4 −0.05
+0.1
+0.2

+0.1
• High Gps : 23 dB TYP. 1.5 −0.1

• Low NF : 1.3 dB TYP.

3
0.85 0.95
2.9±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)

(1.8)

(1.9)
Drain to Source Voltage VDSX 20 V
Gate1 to Source Voltage VG1S
8 V

4

8

0.4 −0.05
Gate2 to Source Voltage VG2S V

+0.1
0.6 −0.05
+0.1
5° 5°
Drain Current ID 25 mA
Total Power Dissipation PT 200 mW

+0.2
−3.1
C

0.8
Channel Temperature Tch 125

1.1

0.16 −0.06
+0.1
Storage Temperature Tstg 55 to +125 C

0 to 0.1
5° 5°

PIN CONNECTIONS
1. Source
2. Drain
3. Gate 2
4. Gate 1
ELECTRICAL CHARACTERISTICS (TA = 25
C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS

Drain to Source Breakdown Voltage BVDSX 20 V VG1S = VG2S =
2 V, ID = 10
A

Drain Current IDSS 7 10 25 mA VDS = 6 V, VG2S = 3 V, VG1S = 0

Gate1 to Source Cutoff Voltage VG1S(OFF)
2.0 V VDS = 8 V, VG2S = 0, ID = 5
A

Gate2 to Source Cutoff Voltage VG2S(OFF)
1.5 V VDS = 8 V VG1S = 0, ID = 5
A

Gate1 Reverse Current IG1SS 20 nA VDS = 0, VG1S = 8 V, VG2S = 0

Gate2 Reverse Current IG2SS 20 nA VDS = 0, VG2S = 8 V, VG1S = 0

Forward Transfer Admittance yfs 22 28 mS VDS = 6 V, VG2S = 3 V, ID = 10 mA

f = 1 kHz

Input Capacitance Ciss 4.0 5.0 6.5 pF VDS = 6 V, VG2S = 3 V, ID = 10 mA

Output Capacitance Coss 2.2 2.9 3.7 pF f = 1 MHz

Reverse Transfer Capacitance Crss 0.05 0.08 pF

Power Gain Cps 21 24 dB VDS = 10 V, VG2S = 5 V, ID = 10 mA

Noise Figure NF 1.2 2.5 dB f = 200 MHz

IDSS classification V11 7-13 mA V12 11-19 mA V13 17-25 mA

Document No. P12449EJ2V0DS00 (2nd edition)

(Previous No. TC-1508)
Date Published March 1997 N
Printed in Japan © 1983
 3SK131

TYPICAL CHARACTERISTICS (TA = 25
C)

TOTAL POWER DISSIPATION vs. DRAIN CURRENT vs.

AMBIENT TEMPERATURE DRAIN TO SOURCE VOLTAGE
20
VG2 = 3.0 V
PT-Total Power Dissipation-mW

400
VG1S = 0 V

ID-Drain Current-mA
300 −0.1
10
−0.2
200
−0.3
−0.4
100
−0.5
−0.6

0 25 50 75 100 125 0 10 20
Ta-Ambient Temperature-°C VDS-Drain to Source Voltage-V

DRAIN CURRENT vs. FORWARD TRANSFER ADMITTANCE vs.

GATE1 TO SOURCE VOLTAGE GATE1 TO SOURCE VOLTAGE
20
5V
3 VV
2V

VDS = 6 V VG2S = 5 V
|yfs|-Forward Transfer Admitance-ms
4

1V 40
4V
ID-Drain Current-mA

30

3V
10
20 2V

10

VG2S = 0 1V

0V
0
−1.0 0 1.0
−1.0 0 +1.0 VG1S-Gate 1 to Source Voltage-V
VG1S-Gate 1 to Source Voltage-V

FORWARD TRANSFER ADMITTANCE vs. INPUT CAPACITANCE vs.

DRAIN CURRENT GATE2 TO SOURCE VOLTAGE

VDS = 6.0 V
30
f = 1 MHz
8.0
|yfs|-Forward Transfer Admitance-ms

Ciss-Input Capacitance-pF

25
6.0
VG1S = 0.05 V
20
4.0
15
2.0
10
0
VDS = 6 V −1.0 0 1.0 2.0 3.0 4.0
5 VG2 = 3 V VG2S-Gate 2 to Source Voltage-V
f = 1.0 kHz

0 10 20
ID-Drain Current-mA

2
 3SK131

OUTPUT CAPACITANCE vs. INPUT ADMITTANCE (yis)

GATE2 TO SOURCE VOLTAGE vs. FREQUENCY
5.0 10
VDS = 6.0 V VDS2 = 6 V
VG2S = 3 V
f = 1.0 MHz ID = 10 mA 300 MHz
Coss-Output Capacitance-pF 4.0

bis-Input Susceptance-mS
VG1S = 0 V
3.0
200 MHz
5
−0.5 V
2.0

100 MHz
1.0

0
−1.0 0 1.0 2.0 3.0 4.0 0 1 2
VG2S-Gate 2 to Source Voltage-V gis-Input Conductance-mS

FORWARD TRANSFER ADMITTANCE (yfs)

vs. FREQUENCY REVERSE TRANSFER ADMITTANCE (yrs)
gfs-Forward Transfer Conductance-mS vs. FREQUENCY
100 MHz grs-Reverse Transfer Conductance-mS
10 20 30 0 0.1 0.2
−5
VDS = 6 V VDS = 6 V

brs-Reverse Transfer Susceptance-mS

bfs-Forward Trancfer Susceptance-mS

VG2S = 3 V VG2S = 3 V
ID = 10 mA ID = 10 mA 300 MHz

−0.1
−10
200 MHz 200 MHz

300 MHz
100 MHz
−15 −0.2

OUTPUT ADMITTANCVE (yos)

vs. FREQUENCY POWER GAIN vs. DRAIN CURRENT
300 MHz
5 25
VDS = 6 V
VG2S = 3 V
ID = 10 mA
bos-Output Susceptance-mS

4 20
Gps-Power Gain-dB

200 MHz
3 15

f = 200 MHz
2 10 VDS = 10 V
100 MHz VG2S = 5 V
VDS = 5 V
VG2S = 3 V
1 5

0 0.5 1.0 0 2 4 6 8 10
gos-Output Conductance-mS ID-Drain Current=mA

3
 3SK131

NOISE FIGURE, POWER GAIN vs.

NOISE FIGURE vs. DRAIN CURRENT GATE2 TO SOURCE VOLTAGE

f = 200 MHz f = 200 MHz

VDS = 10 V 30 VDS = 10 V
VG2S = 5 V VDS = 5 V Gps
4.0 VDS = 5 V 4
VG2S = 3 V
NF-Noise Figure-dB

NF-Noise Figure-dB
20

Gps-Power Gain-dB
3.0 3
10

2.0 2
0
NF
1.0 1
−10
0
0 2 4 6 8 10 −1 0 1 2 3 4 5 6 7 8
ID-Drain Current=mA VG2S-Gate 2 to Source Voltage-V

TEST CIRCUIT
VG2S

1000 pF

22 kΩ

TEST CONDITION
1000 pF
VDS = 10 V, VG2S = 5 V, ID = 10 mA
f = 200 MHz
7 pF L1: φ 0.6 mm U.E.W. 7 mm 3T
INPUT 7 pF L2 OUTPUT L2: φ 0.6 mm U.E.W. 7 mm 3T
L3: RFC 2.2 µ H
L1 1000 pF 50 Ω
50 Ω 1000 pF
1000 pF 15 pF
15 pF
200 Ω

L3
22 kΩ

1000 pF 1000 pF

VG1S VDS

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 3SK131

[MEMO]

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[MEMO]

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 3SK131

[MEMO]

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 3SK131

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Anti-radioactive design is not implemented in this product.

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