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Write “T” for TRUE and “F” for FALSE against the following Statements.
1
Prepared by- Shuvodip Das, Lecturer, Electronics and Telecommunication
Engineering, Prime University, Bangladesh.
Pinch-off voltage increases with increasing bulk voltage and threshold voltage increase with bulk voltage. So,
pinch-off voltage increases as threshold voltage is increased.
24) Current series feedback is use to increase __________ with the voltage gain of a
feedback amplifier. T
2
Prepared by- Shuvodip Das, Lecturer, Electronics and Telecommunication
Engineering, Prime University, Bangladesh.
The constant is often called the unity gain bandwidth. This is the bandwidth at which the
gain of the amplifier is 1.
3
Prepared by- Shuvodip Das, Lecturer, Electronics and Telecommunication
Engineering, Prime University, Bangladesh.
In Pinch-off condition, the width of the channel decreases until no more current flows
between the Drain and the Source. i.e. Drain current is zero.
37) A zener diode behaves like a normal diode under forward- biased condition. T
Since the V-I characteristics curve at forward bias condition is same as rectifying diode.
38) Emitter bypass capacitor is used to increase the voltage gain of an emitter follower
circuit. T
The emitter bypass capacitor can provide an AC ground path for the emitter, increasing the
voltage gain of the amplifier at high frequency.
39) Collector base junction must be reverse biased in common base amplifier operation of a
BJT.
(This sentence hasn’t mentioned whether the BJT is in pnp or npn. !!!!)
Collector base junction must be reverse biased in common base amplifier operation of a PNP
BJT. T
41) An n-type semiconductor impurity into pure semiconductor produces p-type materials. F
42) In an intrinsic semiconductor the number of electrons in the conductor band is equal to
the number of holes. !!!!
(The question is not complete)
Complete question is “an intrinsic semiconductor the number of electrons in the conductor
band is equal to the number of holes in valence band.” T
44) P-n junction diodes offer vary high resistance under forward biased condition. F
45) Movement of the charged particles under an applied electric field causes diffusion
current. F
46) Deflection layer in the p-type material of a p-n junction is positively charged. F
Depletion layer contains 2 deflection layers, one in p-type and other in n-type region. In P-
type material, deflection layer contains negative acceptor ions.
4
Prepared by- Shuvodip Das, Lecturer, Electronics and Telecommunication
Engineering, Prime University, Bangladesh.
49. Effective mobility of holes is higher than that of electrons in intrinsic silicon. F
In intrinsic silicon, no. of holes equals the no. of electrons. Thus mobility of holes and
electrons are equal.