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Dieter Neher
University of Potsdam, Institute of Physics
Am Neuen Palais 10, 14469 Potsdam
www.pled.de
counter electrode
e. g. Ca or Al
-V emission layer
−
hole transport layer
e− hν
transparent electrode
glass substrate −
∆T
+
j h+
+
Dieter Neher Organic Electroluminescence 3
Organic Light-Emitting Diodes (OLEDs)
N
First demonstration of efficient LED from organic dye O O
(layers prepared by thermal evaporation) Al N
Alq3
Poly(p-Phenylen-Vinylen)
j + -
2
2
e- 1
1 h+
+ -
3
4
∆T
hν
# generated photons
Internal EL-efficiency defined as
#charges flowing through the device
η int ( EL)= φ rφ R
triplet singlet
↑↑
↑ ↑
h+ + e-
1
2
( ↑↓ + ↓↑ ) 1
2
( ↑↓ − ↓↑ )
↓ ↓
↓↓
jminor
LUMO Ca 2,9 eV Simplifications:
jmajor
r jmin or jmin or
φR = r =1
→
(1 − r ) jmin or + jmajor jmajor
n k
O
PPP PPV
R
R
O
O
n O
O n
R
R
PPP PPV
PPP P3A P3V P2VMEH-PPV
100
0
-2
Energy [eV]
-
e
1
-3 Ca
0.1
-4
-5
+
ITO 0.01
h
Questions:
light output
ITO
100 - n monolayers
Spreading of perpendicular O
orientation
O n
n monolayers
of parallel
orientation
Aluminium
Transfer
quenching
Pe rc e nta ge of light e mitte d p e r
60%
at cathode exponential
10 monola ye rs (12 nm)
50% decay
40%
30%
20%
0%
kr
η ( PL) =
k r + k nr
light
Laser
CN-PPV
SiO2 spacer
Metal layer
Thin (ca. 2-3 nm) metal layer Thick (ca. 35 nm) metal layer
e2
Coulomb radius rc: = kT
E
-
4πε oεrc
Electron current towards countercharge:
- -
ie = ene v e Ac
rc +
4πrc2
- (µ e + µ h )F ( r = rc )
F(rc)
γ=
(µ e + µ h )e
ε oε
Dieter Neher Organic Electroluminescence 16
Recombination Cross Section
+ - jh µ e + µ h
α=
j
ε oεE 2 µ e µ h
+
h+ e- -
x 30
σR 25
Efficiency [cd/A]
20
current density of electrons towards cations
15
electron “absorption coefficient” α
10
dne
= − αne 5
dx
µe + µh
0
~ e 0 2 4 6 8
α = nhσ R = nh 2
Current density [mA/cm ]
ε oεE µ e
Dieter Neher Organic Electroluminescence 17
Recombination Considerations
jh ( x ) µ e + µ h
α ( x) =
ε o εE 2 ( x ) µ e µ h
E [a.u.]
nh [a.u.]
small jj, α < d-1
inefficient recombination
emission layer
Cathode
-V
hole transport layer
transparent electrode
glass substrate
↑↑
↑ ↑
h+ + e-
1
2
(
↑↓ + ↓↑ ) 1
2
(↑↓ − ↓↑ )
↓ ↓
↓↓
spin statistics: φS : φT = 1 : 3, if
singlet and triplet excitons have
same formation cross-section: σS : σT
Is η(fl) = η(PL)?
ηint ( EL)
ηext ( EL) =
Emitter
2
Anode 2n
Substrate
ideal fluorescent emitter
ideal recombination conditions
n = 1.7:
ηext ( EL) = 5%
N.C. Greenham et al., Adv. Mater 6 (1994) 491
de
self-interference of emitted
photons by multiple reflections
ϑ λ I(ϑ ,λ)
because of energy conservation and Fermi’s Golden Rule, photons can only
be emitted under conditions of constructive interference
1.0
n
R' H R R'
Normalized Intensity
4 0.8
Absorption coefficient α(107 m-1)
0.2
1
0.0 glass/Au/LPPP/Al
0
400 500 600 700 800
200 300 400 500 600 700 800
W avelength λ (nm)
W avele ngth λ (nm )
25 nm Aluminium
O
(a)
4 layers SPPP
n + 114 layers
230nm
O
Polyglutamate
NH CH CO NH CH CO 25 nm Aluminium
CH2 CH2
(b) 0.2
CH2 CH2
m=2 mode
~387nm
Simulation
Experiment 0.1
Intensity of on-axis
FWHM
~20nm
0.05
emission
0
360 370 380 390 400 410 420 430 440
0 50 100 150 200 250 Wavelength (nm)
Distance into sample, nm S. E. Burns, D. Neher, et al., Adv. Mater. 9 (1997) 395
Intensity [ a.u. ]
8 50 nm
60 nm
100 nm
6
solid: exp
dashed: sim
4
0
450 500 550 600 650
Wavelength [ nm ]
Power efficiency: φE ω
light power versus electrical power
η p ( EL) = = η ext ( EL)
eU eU
≤ η ext ( EL)
φV [lumen ]= Vλ (λ )[lm / W ] × φ E [W ]
Vλ (lm/W)
Luminous efficiency:
luminous flux versus electrical power
ηV [lm / W ]= Vλ (λ ) × η P
400 500 600 700
Wavelength (nm)
ηV [lm/W]
ηL [cd/A]
80
60
60
Luminance efficiency: 40
40
luminance (brightness) versus current
20
η L [cd / A]= ηV [lm / W ]×
U 20
π 0
400 500 600
0
700
λ [nm]
What is needed?
Computer display, 100 cd/m2, 1 mA/cm2 (10 cd/A)
blue: ηext > 7 %
difficult to achieve with
green: ηext > 2.6 % fluorescent materials
red: ηext > 6.4 %
Dieter Neher Organic Electroluminescence 28
Phosphorescent Emitters
Pt(II) Octaethylporphine, N
Ir-complexes,
ligand-to metal transition
F
1.0 Firpic
F CH3 Ir(ppy)3
Intensity (a.u)
F H3C CH3
N N
N O 0.8 btp2ir(acac)
Ir
Ir O Ir N
S O
O
F N N N
CH3 0.6
H3 C 0.4
0.0
M. A. Baldo, S. Sibley, M. E. Thompson, 400 500 600 700
S. R. Forrest et al. Nature 395 (1998) 151. Wavelength (nm)
HOMO
HOMO
h+
3 major processes: charge transfer to guest
Dexter and Förster transfer for singlet excitons
Dexter transfer of triplet excitons
n
N Pt N
PFO PtOEP
15000
Brightness (cd/m )
25
2
60
20
PCE [lm/W]
10
10000
40 15
10 5
20 5000
5
0 0 0 0
0 2 4 6 8 10 12 0 20 40 60 80 100
Voltage (V) 2
Current density (mA/cm )
Ir(ppy)3 in TCTA
Problem:
depending on treatment, ITO has a work function of 4.3-4.9 eV
inefficient hole injection into many organic semiconductors
One solution:
chemical or electrochemical
doping of semiconductor
One example:
PEDOT:PSS
work function ca. 5.2 eV
not soluble in organic solvents
quite transparent
hole-injection layer
Electrochemical doping of
polythiophene hole-injection layer
Polymer OLED
Thanks to:
Sony 13‘‘
Dieter Neher Organic Electroluminescence 40