Академический Документы
Профессиональный Документы
Культура Документы
Internal Assessment
Assignment
Submitted by
Sricharan Ch
M.Tech
Electronics Engineering
Course Instructor:
Samundeswari, M.Tech(Phd).
MOS STRUCTURES
MOS structures employ MOS Diode as its basic element. The MOS diode can be thought
of as Capacitance under certain conditions which is called as MOS Capacitor. These can be
categorised into two categories : Ideal and Real depending upon the conditions we assume.
Introduction
Basic bias conditions of MOS capacitor:
S
ource: Above page, Drain: Below page, Gate: Metal Gate
Fermi levels are different in M and S.
Fermi levels are constant within M and within S
Surface potential = ϕs
where
Beyond the onset of strong inversion, electrons are induced into the electron channel.
The depletion layer thickness does not increase further, i.e. WD = WD, max.
Illustration of band diagram, charge, field, and potential of ideal MOS capacitor:
We use the Depletion Approximation for the acceptor charge in the semiconductor
CV curve for Real MOS Capacitor: The various CV Plots for MOS capacitor using different
materials is shown below.
References:
1. Semiconductor Devices Physics & Technology, S.M. Sze – Pg. no: 170 – 179.
2. ECSE‐2210, Microelectronics Technology, Prof. E. F. Schubert : Chapter 32 – page
1 – 12.
3. ECSE‐2210, Microelectronics Technology, Prof. E. F. Schubert : Chapter 33 – page
1 – 3.