Академический Документы
Профессиональный Документы
Культура Документы
ISSUES TO ADDRESS...
Mechanisms
• Gases & Liquids – random (Brownian) motion
• Solids – vacancy diffusion or interstitial diffusion
Importance of diffusion?
• All materials processing
• Energy storage (e.g. fuel cells, batteries…)
• Filtration
• Chemical reactions
• Semiconductor devices
• And more…
MSE 280: Engineering Materials ©Lane W. Martin Spring 2011 3
Processing Using Diffusion (1)
• Result
• The “case” is: Callister, Fig. 6.0
• Hard to deform C atoms
“lock” planes from shearing
• Hard to crack C atoms
put surface in compression
silicon
2. Heat it.
3. Result: Doped
semiconductor regions.
silicon
Fig. 18.0, Callister 6e.
Adapted from
Figs. 5.1 and
5.2, Callister 6e.
100%
0
Concentration Profiles
C
A
D
B
Lattice
distortion
1atom M
Net result: or
area t ' At '
• Directional Quantity
Position, x
• Fick's First Law:
dC
• Apply Fick's First Law: J x D
dx
dC dC
• If Jx,left = Jx,right , then
dx left dx right
dC
C2 C2 J D
dx
x1 x2
x
D diffusion coefficient
dC C C2 C1
if linear
dx x x2 x1
Assume:
• D = 1.7x10-8 m2 / s
• CH = 2.0 kg / m3
• CL = 0.4 kg / m3
• That steady state conditions have been achieved.
Qd
D Do exp
R T
D = diffusion coefficient [m2/s]
Do = pre-exponential [m2/s]
Qd = activation energy [J/mol or eV/atom]
R = gas constant [8.314 J/mol-K]
T = absolute temperature [K]
1500
1000
600
300
T(C)
10-8
10-20
0.5 1.0 1.5 1000 K/T
Adapted from Fig. 6.7, Callister & Rethwisch 3e. (Date for Fig. 6.7
taken from E.A. Brandes and G.B. Brook (Ed.) Smithells Metals
Again, SMALLER
Reference Book, 7th ed., Butterworth-Heinemann, Oxford, 1992.) species diffuse FASTER
D transform data ln D
Temp = T 1/T
Qd1 Q 1
lnD2 lnD0 and lnD1 lnD0 d
R T2 R T1
D2 Qd 1 1
lnD2 lnD1 ln
D1 R T2 T1
MSE 280: Engineering Materials ©Lane W. Martin Spring 2011 24
Temperature Dependence of Diffusion
Qd 1 1
D2 D1 exp
R T2 T1
1500
1000
600
300
T(C)
10-8 C diffusion in γ-Fe
(FCC) is slower than
D (m2/s)
in α-Fe (BCC) even at
higher T!
10-14
10-20
0.5 1.0 1.5 1000 K/T
C C 2
D 2
t x
C( x, t )
Cs At to, C = Co inside the Al bar
At t > 0, C(x=0) = Cs and C(x=∞) = Co
t2 t3
t t1
Co o
position, x
C x ,t Co x
1 erf
Cs Co 2 Dt
2 Dt
Note: values
• Answer: of D are
provided here
11
10
10
9 T (oC) t (s) t (h)
7 300 8.5 x 1011 2.4x108 27,782 yrs!
10
time (hours)
10
5
900 106,400 29.6
950 57,200 15.9
1000
1000 32,300 9.0
10
1050 19,000 5.3
0.1
200 400 600 800 1000 1200
T (K)
Assume: D = 5.3x10-11 m2 / s
- + - + - + - + - + -
+ - + - + - + - + - +
- + - + - + - + - + -
+ - + - + - - + - +
- + - + - + - + - + -
+ - + - + - + - + - +