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M4 M4a
I0+I1 I0+I1
M5 M5a Iout
Vin1 M1 M1a Vin2
VB VB
ID
Vo1 VCR Vo2
M2 M2a
M3 Vctrl M3a
I1 I1
Fig. 4. Voltage control resistor (VCR) circuit.
( 1 : 1 ) (1 : K )
amplifiers, six resistors, two capacitors, and a NMOS
Fig. 3. Schematic of proposed programmable V-to-I converter based
on the linear voltage control resistor (VCR).
transistor working in triode region. By the control of the
op-amps and components R1~6, the voltages V3 is derived
currents (I1 and I0+I1), the difference voltage between input as:
voltages (Vin1 and Vin2) is equal to the difference voltage
between output voltages (Vo1 and Vo2). Thus, the output V3 = VDS ( M a ) + 2VS , when VDS > 0 and R1~6 = R (3)
current Iout can be generated by utilizing current mirror
transistors M3, 4 and transistors M3a, 4a to sense the current Carefully matching two resistors R5 and R6, then the
ID. The output current is given by: quantity of drain-source voltage VDS(Ma) can be certainly
obtained for voltage V3. Besides, by using two capacitors
Vo1 -Vo2 V -V with the same capacitance (C1=C2=C) to implement the
I out = 2KI D = 2K × = 2K × in1 in2 (1)
R(VCR ) R(VCR ) floating-gate technique [9-11], the gate source voltage of
transistor Ma is given by:
( )
where R(VCR) is the equivalent resistance of VCR circuit. As 1
a result, by using the control signal Vctrl to adjust the value VGS ( M a ) = Vctrl +VDS ( M a ) (4)
2
of equivalent resistance in VCR circuit, the
programmability of output current can be achieved. where Vctrl is the control voltage. According to (2) and (4),
the drain current of transistor Ma is given by:
C. Voltage Control Resistor
⎛1 ⎞
Voltage control resistor (VCR) with electronically I D = β ⎜ Vctrl -Vth ⎟ VDS ( M a ) (5)
variable resistance magnitude is important. Several ⎝ 2 ⎠
literatures [7, 8] have been published for this topic. Obviously, (5) shows the linear relationship between drain
Although a MOSFET operates in triode region is current ID and drain source voltage VDS(Ma). In other words,
equivalent to a resistor, but it contains the non-linear term the VCR circuit is a linear resistor with the value is:
to deteriorate the linearity of the equivalent resistance. In
this paper, a new approach to realize the linearity is 1
R(VCR ) = (6)
proposed. ⎛1 ⎞
β ⎜ Vctrl -Vth ⎟
The drain current of an NMOS transistor that operates in ⎝ 2 ⎠
the triode region can be expressed as:
The value equivalent RVCR is linearly proportional to the
⎡ ⎤
⎣
( ) 1 2
I D = β ⎢ VGS ( M a ) -Vth VDS ( M a ) - VDS
2
(Ma ) ⎥
⎦
(2) value of the control signal Vctrl. Similarly, we can derive
the same result as (6) when the drain-source voltage VDS is
less than zero.
where β=μnCox(W/L), μn is the carrier mobility, Cox is the Besides, in order to keep the linear resistance
oxide capacitance, Vth is the threshold voltage, W and L are characteristic, the condition in (7) must be guaranteed for
the width and length of MOSFET, respectively. In order to ensuring that transistor Ma operates in triode region.
eliminate the non-linear component of (2), i.e. (β/2)VDS2(Ma),
the voltage control resistor circuit is proposed as shown in VGS ( M a ) >VDS ( M a ) +Vth (7)
Fig. 4. This VCR circuit is composed of two operational
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Current of Transistor Ma (A)
(a) (b)
Fig. 5. Simulation result of voltage control resistor circuit (-0.55 V < VDS = Vin < +0.55 V). (a) ID characteristics with Vctrl as a parameter (from 3 V to
1.6 V with a step of 0.2 V). (b) Derivative of simulation results of Fig. 5(a).
Owing to (4), the minimum value of control signal is: Fig. 6 shows the simulation results of the proposed
programmable V-to-I converter with linear VCR circuit (-
Vctrl _min = VDS ( M a ) + 2Vth (8)
0.55 V < Vin1 – Vin2 = Vin < +0.55 V). Characteristic of
According to (6) and (8), the maximum equivalent Iout with Vctrl as a parameter (from 3 V to 1.6 V with a step
resistance of proposed VCR circuit is described as: of 0.2 V) is shown in Fig. 6 (a), and Fig. 6 (b) is the
derivative of simulation results of Fig. 6 (a). According to
2 the structure illustration of Section II, the output current
R(VCR )_max = (9)
βVDS ( M a ) Iout should be two times the value of drain current of
transistor Ma. It means that the current of Fig. 6 (a) is two
times the value in Fig. 5 (a).
III. SIMULATION RESULTS Fig. 7 is the frequency response of proposed
The proposed programmable V-I converter with linear programmable V-to-I converter with linear VCR circuit.
voltage control resistor has been simulated by TSMC 0.25- As the waveform shown, the DC gain is increased when
µm process. The threshold voltages of nMOSFET and the controlled signal Vctrl increases from 1.6 V to 3 V. It
pMOSFET are 0.5 V and 0.6 V, respectively. In order to demonstrates the validity of (1) and programmable char-
achieve low-power specification, the bias current I0 and I1 acteristic. Besides, the unity gain frequency is about 200
are designed as 10 µA and 2 µA, respectively. The drain MHz, and it is contributed to enhance the response time.
current ID must be smaller than the bias current I0 to make However, the DC gain of this V-I converter is slightly
sure that all MOSFETs of CASFVF structure operate in lower than that of the previous design owing to the value
saturation region. In other words, the designed value of of RVCR should be large enough to achieve low power
RVCR should have a large value. specification.
Fig. 5 is the simulation result of voltage control resistor
circuit. Owing to the limited condition of input swing in IV. CONCLUSIONS
cascoded flipped voltage follower, the test VDS swing is
A programmable voltage-to-current converter with
from -0.55 V to +0.55 V. Resorted to (8), the minimum
linear voltage control resistor is presented. By using the
value of control signal, Vctrl_min, is designed to be equal to
cascoded flipped voltage follower to be the input stage,
1.6 V. Hence, Fig. 5 (a) shows the characteristics of drain
response time is enhanced as shown in simulation result.
current of transistor Ma with the control signal Vctrl as a
Besides, dependent on the control signal Vctrl, the
parameter (from 3 V to 1.6 V with a step of 0.2 V). Fig. 5
equivalent resistance of proposed voltage control resistor
(b) is the derivative of simulation results in Fig. 5 (a). As
can be programmable for controlling the gain of V-I
Fig .5 shown, the linearity of proposed voltage control
converter. Therefore, with the capability of pro-
resistor is demonstrated by the linear relationship between
grammability, the design is more flexible. Simulation
the drain current ID and the drain-source voltage VDS(Ma).
results in 0.25-µm CMOS technology also demonstrate the
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Vctrl = 3 Vctrl = 3.0
Vctrl = 2.8
Vctrl = 2.4
Vctrl = 2.0
Vctrl = 1.8
Vctrl = 1.6
(a) (b)
Fig. 6. Simulation results of the proposed programmable linear V-to-I converter (-0.55 V < Vin1 – Vin2 = Vin < +0.55 V). (a) Output current Iout
characteristics adjusted by the control voltage Vctrl (from 3 V to 1.6 V with a step of 0.2 V). (b) Derivative of simulation results of Fig. 6 (a).
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