CM50DY-24H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBTMOD™
H-Series Module
50 Amperes/1200 Volts

F F K Q - DIA.
(2 TYP.)

E2 G2
D M J

G1 E1
C2E1 E2 C1

R
N S - M5 THD
Description:
(3 TYP.) (3 TYP.) Powerex IGBTMOD™ Modules
R are designed for use in switching
R .110 TAB
applications. Each module consists
H L H of two IGBT Transistors in a
half-bridge configuration with each
P
transistor having a reverse-
E
connected super-fast recovery
G free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
G2
Features:
E2 □ Low Drive Power
□ Low VCE(sat)
□ Discrete Super-Fast Recovery
C2E1 E2 C1
(135ns) Free-Wheel Diode
□ High Frequency Operation
E1 (20-25kHz)
G1 □ Isolated Baseplate for Easy
Heat Sinking
Applications:
Outline Drawing and Circuit Diagram
□ AC Motor Control
Dimensions Inches Millimeters Dimensions Inches Millimeters
□ Motion/Servo Control
□ UPS
A 3.70 94.0 K 0.67 17.0
□ Welding Power Supplies
B 3.150±0.01 80.0±0.25 L 0.63 16.0
□ Laser Power Supplies
C 1.57 40.0 M 0.51 13.0
Ordering Information:
D 1.34 34.0 N 0.47 12.0
Example: Select the complete part
E 1.22 Max. 31.0 Max. P 0.28 7.0 module number you desire from
F 0.90 23.0 Q 0.256 Dia. Dia. 6.5 the table below -i.e. CM50DY-24H
G 0.85 21.5 R 0.16 4.0 is a 1200V (VCES), 50 Ampere
Dual IGBTMOD™ Power Module.
H 0.79 20.0 S M5 Metric M5
J 0.71 18.0 Type Current Rating VCES
Amperes Volts (x 50)
CM 50 24

253
 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

CM50DY-24H
Dual IGBTMOD™ H-Series Module
50 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM50DY-24H Units
Junction Temperature Tj –40 to 150 °C
Storage Temperature Tstg –40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter Voltage VGES ±20 Volts
Collector Current IC 50 Amperes
Peak Collector Current ICM 100* Amperes
Diode Forward Current IF 50 Amperes
Diode Forward Surge Current IFM 100* Amperes
Power Dissipation Pd 400 Watts
Max. Mounting Torque M5 Terminal Screws – 17 in-lb
Max. Mounting Torque M6 Mounting Screws – 26 in-lb
Module Weight (Typical) – 190 Grams
V Isolation VRMS 2500 Volts
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1.0 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 5mA, VCE = 10V 4.5 6.0 7.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 50A, VGE = 15V – 2.5 3.4** Volts
IC = 50A, VGE = 15V, Tj = 150°C – 2.25 – Volts
Total Gate Charge QG VCC = 600V, IC = 50A, VGS = 15V – 250 – nC
Diode Forward Voltage VFM IE = 50A, VGS = 0V – – 3.5 Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies – – 10 nF
Output Capacitance Coes VGE = 0V, VCE = 10V, f = 1MHz – – 3.5 nF
Reverse Transfer Capacitance Cres – – 2 nF
Resistive Turn-on Delay Time td(on) – – 80 ns
Load Rise Time tr VCC = 600V, IC = 50A, – – 200 ns
Switching Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, RG = 6.3Ω – – 150 ns
Times Fall Time tf – – 350 ns
Diode Reverse Recovery Time trr IE = 50A, diE/dt = –100A/µs – – 250 ns
Diode Reverse Recovery Charge Qrr IE = 50A, diE/dt = –100A/µs – 0.37 – µC

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.31 °C/W
Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.70 °C/W
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.075 °C/W

254
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

CM50DY-24H
Dual IGBTMOD™ H-Series Module
50 Amperes/1200 Volts

COLLECTOR-EMITTER
OUTPUT CHARACTERISTICS TRANSFER CHARACTERISTICS SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL) (TYPICAL) (TYPICAL)
100 100 5
15 12
Tj = 25oC VCE = 10V VGE = 15V

SATURATION VOLTAGE, VCE(sat), (VOLTS)

COLLECTOR CURRENT, IC, (AMPERES)
Tj = 25°C
COLLECTOR CURRENT, IC, (AMPERES)

Tj = 25°C
80 VGE = 20V 80 Tj = 125°C 4 Tj = 125°C
11

COLLECTOR-EMITTER
60 60 3

10
40 40 2

9
20 20 1
7
8

0 0 0
0 2 4 6 8 10 0 4 8 12 16 20 0 20 40 60 80 100
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER FREE-WHEEL DIODE

SATURATION VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS CAPACITANCE VS. VCE
(TYPICAL) (TYPICAL) (TYPICAL)
10 102 102
Tj = 25°C Tj = 25°C
SATURATION VOLTAGE, VCE(sat), (VOLTS)

CAPACITANCE, Cies, Coes, Cres, (nF)

EMITTER CURRENT, IE, (AMPERES)

8
IC = 100A
COLLECTOR-EMITTER

101 Cies
6
IC = 50A
101
4
Coes
100

2
IC = 20A VGE = 0V Cres
f = 1MHz
0 100 10-1
0 4 8 12 16 20 0 0.8 1.6 2.4 3.2 4.0 10-1 100 101 102
GATE-EMITTER VOLTAGE, VGE, (VOLTS) EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

HALF-BRIDGE
SWITCHING CHARACTERISTICS REVERSE RECOVERY CHARACTERISTICS
(TYPICAL) (TYPICAL) GATE CHARGE, VGE
103 103 101 20
REVERSE RECOVERY CURRENT, Irr, (AMPERES)

tf IC = 50A
GATE-EMITTER VOLTAGE, VGE, (VOLTS)

Irr
REVERSE RECOVERY TIME, t rr, (ns)

16
VCC = 400V
td(off)
SWITCHING TIME, (ns)

VCC = 600V
12
t rr
102 102 100

8
td(on)

VCC = 600V
VGE = ±15V 4
di/dt = -100A/µsec
RG = 6.3Ω
tr Tj = 25°C
Tj = 125°C
101 101 10-1 0
100 101 102 100 101 102 0 100 200 300 400
COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) GATE CHARGE, QG, (nC)

255
 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

CM50DY-24H
Dual IGBTMOD™ H-Series Module
50 Amperes/1200 Volts

TRANSIENT THERMAL TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS IMPEDANCE CHARACTERISTICS
(IGBT) (FWDi)
10-3 10-2 10-1 100 101 10-3 10-2 10-1 100 101

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)

101 101
Single Pulse Single Pulse
TC = 25°C TC = 25°C
Per Unit Base = R th(j-c) = 0.7°C/W

Zth = Rth • (NORMALIZED VALUE)

Per Unit Base = R th(j-c) = 0.31°C/W
Zth = Rth • (NORMALIZED VALUE)

100 100

10-1 10-1 10-1 10-1

10-2 10-2 10-2 10-2

10-3 10-3 10-3 10-3

10-5 10-4 10-3 10-5 10-4 10-3
TIME, (s) TIME, (s)

256
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.