Вы находитесь на странице: 1из 4
VN3205
VN3205

VN3205

VN3205 Ordering Information N-Channel Enhancement-Mode V ertical DMOS FETs BV DSS / R DS(ON) V GS(th)

Ordering Information

N-Channel Enhancement-Mode Vertical DMOS FETs

BV DSS /

R

DS(ON)

V

GS(th)

 

Order Number / Package

 

BV DGS

(max)

(max)

TO-92

14-Pin P-DIP

TO-243AA*

Die

50V

 

0.3

2.4V

VN3205N3

VN3205N6

VN3205N8

VN3205ND

* Same as SOT-89. Product supplied on 2000 piece carrier tape reels. MIL visual screening available

Product marking for TO-243AA:

VN2L

Where = 2-week alpha date code

Features

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C ISS and fast switching speeds

Excellent thermal stability

Integral Source-Drain diode

High input impedance and high gain

Complementary N- and P-channel devices

Applications

Motor controls

Converters

Amplifiers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)

Absolute Maximum Ratings

Drain-to-Source Voltage

BV DSS

Drain-to-Gate Voltage

BV DGS

Gate-to-Source Voltage

± 20V

Operating and Storage Temperature

-55 °C to +150 °C

Soldering Temperature*

300°C

* Distance of 1.6 mm from case for 10 seconds.

11/12/01

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally- induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Package Options

D

1

1 14

1 14

D

4

G

1

2 13

G

4

S

1

3 12

S

4

NC

4 11

NC

S

2

5 10

S

3

G

2

6 9

G

3

D

2

7 8

D

3

 
2 6 9 G 3 D 2 7 8 D 3   S G D TO-92

S G D

TO-92

top view

14-pin DIP

D G D S TO-243AA
D
G
D
S
TO-243AA

(SOT-89)

Note: See Package Outline section for dimensions.

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

1

Thermal Characteristics

VN3205

Package

I D (continuous)*

I D (pulsed)

Power Dissipation @ T C = 25 °C

θ

jc

°C/W

θ

ja

°C/W

 

I

DR *

I

DRM

TO-92

1.2A

8.0A

1.0W

125

170

 

1.2A

8.0A

SOT-89

1.5A

8.0A

1.6W (T A = 25 ° C)

15

78

 

1.5A

8.0A

Plastic DIP

1.5A

8.0A

3.0W

41.6

83.3

1.5A

8.0A

* I D (continuous) is limited by max rated T j . T A = 25 ° C. Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P D increase possible on ceramic substrate. Total for package.

Electrical Characteristics (@ 25° C unless otherwise specified)

Symbol

Parameter

Min

Typ

Max

Unit

 

Conditions

BV DSS

Drain-to-Source Breakdown Voltage

50

   

V

V

GS = 0V, I D = 10mA

V

GS(th)

Gate Threshold Voltage

0.8

 

2.4

V

V

GS = V DS , I D = 10mA

V GS(th)

Change in V GS(th) with Temperature

 

-4.3

-5.5

mV/° C

V

GS = V DS , I D = 10mA

I

GSS

Gate Body Leakage

 

1

100

nA

V

GS = ±20V, V DS = 0V

I

DSS

Zero Gate Voltage Drain Current

   

10

µA

V

GS = 0V, V DS = Max Rating

 

1

mA

V

GS = 0V, V DS = 0.8 Max Rating

T

A = 125 ° C

I

D(ON)

ON-State Drain Current

3.0

14

 

A

V

GS = 10V, V DS = 5V

R

DS(ON)

Static Drain-to-Source ON-State Resistance

TO-92 and P-DIP

   

0.45

V

GS = 4.5V, I D = 1.5A

 

SOT-89

   

0.45

V

GS = 4.5V, I D = 0.75A

 

TO-92 and P-DIP

   

0.3

V

GS = 10V, I D = 3A

SOT-89

   

0.3

V

GS = 10V, I D = 1.5A

R DS(ON)

Change in R DS(ON) with Temperature

 

0.85

1.2

%/° C

V

GS = 10V, I D = 3A

G

FS

Forward Transconductance

1.0

1.5

 

V

DS = 25V, I D = 2A

C

ISS

Input Capacitance

 

220

300

 

V

GS = 0V, V DS = 25V

C

 

Common Source Output Capacitance

 

70

120

pF

OSS

f

= 1 MHz

C

RSS

Reverse Transfer Capacitance

 

20

30

 

t

d(ON)

Turn-ON Delay Time

   

10

 

V

DD = 25V

t

Rise Time

   

15

ns

I D = 2A

 

r

R

GEN = 10

t

d(OFF)

Turn-OFF Delay Time

   

25

t

f

Fall Time

   

25

 

V

SD

Diode Forward Voltage Drop

   

1.6

V

V

GS = 0V, I SD = 1.5A

t

rr

Reverse Recovery Time

 

300

 

ns

V

GS = 0V, I SD = 1A

Notes:

1. All D.C. parameters 100% tested at 25 ° C unless otherwise stated. (Pulse test: 300 µ s pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

Switching Waveforms and Test Circuit

V DD

R L PULSE GENERATOR OUTPUT R gen D.U.T. INPUT
R
L
PULSE
GENERATOR
OUTPUT
R
gen
D.U.T.
INPUT

10V

0V

90% 10% t (ON) t (OFF) t d(ON) t r t d(OFF) t F 10%
90%
10%
t (ON)
t (OFF)
t d(ON)
t r
t d(OFF)
t F
10%
10%
90%
90%

INPUT

V DD

0V

OUTPUT

2

Typical Performance Curves

Output Characteristics 20 V GS = 10V 16 8V 12 8 6V 4 4V 3V
Output Characteristics
20
V GS =
10V
16
8V
12
8
6V
4
4V
3V
0
0
10
20
30
40
50
V DS (volts)
Transconductance vs. Drain Current
5
V DS = 25V
4
3
T A = -55 °C
25
°C
2
125
°C
1
0
0
2
4
6
8
10
I D (amperes)
G FS (siemens)
I D (amperes)

Maximum Rated Safe Operating Area

10 TO-243AA TO-92 (pulsed) (pulsed) P-DIP (pulsed) 1.0 TO-243AA (DC) TO-92 (DC) P-DIP (DC) 0.1
10
TO-243AA
TO-92 (pulsed)
(pulsed)
P-DIP
(pulsed)
1.0
TO-243AA (DC)
TO-92 (DC)
P-DIP (DC)
0.1
T C =
25
°C
.01
0
1
10
100
I D (amperes)

V DS (volts)

3

VN3205

Saturation Characteristics

20 V GS = 16 10V 8V 12 8 6V 4 4V 3V 0 0
20
V GS =
16
10V
8V
12
8
6V
4
4V
3V
0
0
2
4
6
8
10
V DS (volts)
Power Dissipation vs. Temperature
2.0
TO-243AA (T A
= 25°C)
1.6
P-DIP
1.2
TO-92
0.8
0.4
0
0
25
50
75
100
125
150
T
C ( °C)
Thermal Response Characteristics
1.0
0.8
TO-243AA
0.6
T
A = 25 °C
P
D = 1.6W
0.4
0.2
TO-92
P D = 1W
T C = 25 ° C
0
0.001
0.01
0.1
1.0
10
Thermal Resistance (normalized)
P D (watts)
I D (amperes)

t p (seconds)

BV DSS (normalized)

I D (amperes)

C (picofarads)

Typical Performance Curves

BV Variation with Temperature DSS -50 0 50 100 150 T (° C) j Transfer
BV
Variation with Temperature
DSS
-50
0
50
100
150
T
(° C)
j
Transfer Characteristics
V DS = 25V
8
T
= -55°C
A
25°C
6
125°C
4
2
0
0
2
4
6
8
10
V GS (volts)
Capacitance vs. Drain-to-Source Voltage
f = 1MHz
C
ISS
C
OSS
C RSS
0
10
20
30
40

1.1

1.0

0.9

10

400

300

200

100

0

V DS (volts)

VN3205

On-Resistance vs. Drain Current

1.0 V GS = 4.5V 0.8 10V V GS = 0.6 0.4 0.2 0 0
1.0
V GS = 4.5V
0.8
10V
V GS =
0.6
0.4
0.2
0
0
4
8
12
16
20
R DS(ON) (ohms)

I D (amperes)

and R Variation with Temperature V GS(th) DS(ON) 1.2 1.6 10V, 3A R DS(ON) @
and R
Variation with Temperature
V GS(th)
DS(ON)
1.2
1.6
10V, 3A
R DS(ON) @
1.1
1.4
1.0
1.2
0.9
1.0
0.8
V GS(th) @ 1mA
0.8
0.7
0.6
-50
0
50
100
150
T j (°C)
Gate Drive Dynamic Characteristics
10
V DS = 10V
8
V DS = 40V
6
325 pF
4
2
215 pF
0
012
3
4
5
Q
G (nanocoulombs)
V GS (volts)
V GS(th) (normalized)
R DS(ON) (normalized)

11/12/01

V GS(th) (normalized) R DS(ON) (normalized) 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use

©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.

4

1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com