Plastic Medium-Power Complementary Silicon Transistors TIP110 TIP111 TIP112 TIP115 TIP116 TIP117

ON Semiconductor
NPN
Plastic Medium-Power TIP110
Complementary Silicon Transistors TIP111*
TIP112 *
. . . designed for general–purpose amplifier and low–speed
switching applications.
PNP
• High DC Current Gain —
hFE = 2500 (Typ) @ IC TIP115
= 1.0 Adc
• Collector–Emitter Sustaining Voltage — @ 30 mAdc TIP116 *
VCEO(sus) = 60 Vdc (Min) — TIP110, TIP115
= 80 Vdc (Min) — TIP111, TIP116
= 100 Vdc (Min) — TIP112, TIP117
TIP117 *
• Low Collector–Emitter Saturation Voltage — *ON Semiconductor Preferred Device
VCE(sat) = 2.5 Vdc (Max) @ IC

= 2.0 Adc DARLINGTON
• Monolithic Construction with Built–in Base–Emitter Shunt Resistors 2 AMPERE
COMPLEMENTARY SILICON
• TO–220AB Compact Package
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
POWER TRANSISTORS
60–80–100 VOLTS
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*MAXIMUM RATINGS 50 WATTS
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Rating Symbol
TIP110,
TIP115
TIP111,
TIP116
TIP112,
TIP117 Unit
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
Collector–Emitter Voltage VCEO 60 80 100 Vdc
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Collector–Base Voltage VCB 60 80 100 Vdc 4
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Emitter–Base Voltage VEB 5.0 Vdc
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Collector Current — Continuous IC 2.0 Adc
Peak 4.0
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
STYLE 1:
Base Current IB 50 mAdc PIN 1. BASE
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
2. COLLECTOR
Total Power Dissipation @ TC = 25C PD 50 Watts 1 3. EMITTER
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
2 4. COLLECTOR
Derate above 25C 0.4 W/C 3
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Total Power Dissipation @ TA = 25C PD 2.0 Watts
CASE 221A–09
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Derate above 25C 0.016 W/C
TO–220AB
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Unclamped Inductive Load Energy — E 25 mJ
Figure 13
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
Operating and Storage Junction
ÎÎÎÎÎÎ
ÎÎÎ
THERMAL CHARACTERISTICS
TJ, Tstg –65 to +150 C
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
Characteristics
ÎÎÎÎÎÎ
ÎÎÎ
Thermal Resistance, Junction to Case
Symbol
RθJC
Max
2.5
Unit
C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Thermal Resistance, Junction to Ambient RθJA 62.5 C/W
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
 Semiconductor Components Industries, LLC, 2002 1 Publication Order Number:

April, 2002 – Rev. 4 TIP110/D
TIP110 TIP111 TIP112 TIP115 TIP116 TIP117
TA TC
PD, POWER DISSIPATION (WATTS)

3.0 60
2.0 40
TC
1.0 20
TA
0 0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
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2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ Characteristic Symbol Min Max Unit
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎ
ÎÎÎ
Collector–Emitter Sustaining Voltage (1) VCEO(sus) Vdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 30 mAdc, IB = 0) TIP110, TIP115 60 —
TIP111, TIP116
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
80 —
TIP112, TIP117 100 —
ÎÎÎÎÎ
Collector Cutoff Current
ÎÎÎÎÎ
(VCE = 30 Vdc, IB = 0) ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
TIP110, TIP115
ICEO
— 2.0
mAdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCE = 40 Vdc, IB = 0) TIP111, TIP116 — 2.0
(VCE = 50 Vdc, IB = 0) TIP112 ,TIP117 — 2.0
ÎÎÎÎÎ
Collector Cutoff Current
ÎÎÎÎÎ
(VCB = 60 Vdc, IE = 0) ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ TIP110, TIP115
ICBO
— 1.0
mAdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCB = 80 Vdc, IE = 0) TIP111, TIP116 — 1.0
(VCB = 100 Vdc, IE = 0) TIP112, TIP117 — 1.0
ÎÎÎÎÎ
Emitter Cutoff Current
ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
(VBE = 5.0 Vdc, IC = 0) ÎÎÎ
ÎÎÎÎ
ÎÎÎ
IEBO — 2.0 mAdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ON CHARACTERISTICS (1)
DC Current Gain
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 2.0 Adc, VCE = 4.0 Vdc)
hFE
1000 —
—
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
500 —
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector–Emitter Saturation Voltage VCE(sat) — 2.5 Vdc
(IC = 2.0 Adc, IB = 8.0 mAdc)
ÎÎÎÎÎ
Base–Emitter On Voltage
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 2.0 Adc, VCE = 4.0 Vdc)
VBE(on) — 2.8 Vdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Small–Signal Current Gain hfe 25 — —
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Output Capacitance Cob pF
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) TIP115, TIP116, TIP117 — 200
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
TIP110, TIP111, TIP112 — 100
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
4.0
CC V VCC = 30 V IB1 = IB2
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS -30 V ts IC/IB = 250 TJ = 25°C
D1, MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA 2.0
RC
MSD6100 USED BELOW IB ≈ 100 mA SCOPE
TUT
t, TIME (s)
V2 RB tf
µ
approx 1.0
+8.0 V 0.8
D1 ≈ 8.0 k tr
51 ≈ 60
0 0.6
V1
approx +4.0 V 0.4
-12 V 25 µs td @ VBE(off) = 0
for td and tr, D1 is disconnected
and V2 = 0, RB and RC are varied PNP
tr, tf ≤ 10 ns to obtain desired test currents. NPN
DUTY CYCLE = 1.0% 0.2
For NPN test circuit, reverse diode, 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0
polarities and input pulses.
IC, COLLECTOR CURRENT (AMP)
Figure 2. Switching Times Test Circuit Figure 3. Switching Times
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3
1.0
r(t), TRANSIENT THERMAL RESISTANCE 0.7
D = 0.5
0.5
0.3
0.2
(NORMALIZED)
0.2
0.1
0.1 P(pk)
ZθJC(t) = r(t) RθJC
0.07 0.05 RθJC = 2.5°C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02 PULSE TRAIN SHOWN
0.03 t1
READ TIME AT t1 t2
0.02 TJ(pk) - TC = P(pk) ZθJC(t)
0.01 DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)
Figure 4. Thermal Response
ACTIVE–REGION SAFE–OPERATING AREA
10 10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
4.0 4.0
1ms
2.0 5ms 2.0
TJ = 150°C dc TJ = 150°C dc
1.0 BONDING WIRE LIMITED 1.0 BONDING WIRE LIMITED
THERMALLY LIMITED THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE) @ TC = 25°C (SINGLE PULSE)
SECONDARY BREAKDOWN LIMITED SECONDARY BREAKDOWN LIMITED
CURVES APPLY BELOW TIP115 CURVES APPLY BELOW TIP110

TIP116 RATED VCEO TIP111
RATED VCEO
TIP117 TIP112
0.1 0.1
1.0 10 40 60 80 100 1.0 10 60 80 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. TIP115, 116, 117 Figure 6. TIP110, 111, 112
There are two limitations on the power handling ability of 200

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE TC = 25°C
100
limits of the transistor that must be observed for reliable
C, CAPACITANCE (pF)
operation; i.e., the transistor must not be subjected to greater 70

dissipation than the curves indicate.
50
The data of Figures 5 and 6 is based on T J(pk) = 150C;
Cob
T C is variable depending on conditions. Second breakdown
30
pulse limits are valid for duty cycles to 10% provided TJ(pk) Cib
< 150C. T J(pk) may be calculated from the data in 20
Figure 4. At high case temperatures, thermal limitations will PNP
reduce the power that can be handled to values less than the NPN
limitations imposed by second breakdown. 10
0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 10 20 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
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4
NPN PNP
TIP110, 111, 112 TIP115, 116, 117
6.0 k 6.0 k
TJ = 125°C VCE = 3.0 V VCE = 3.0 V
4.0 k 4.0 k TJ = 125°C
3.0 k 3.0 k
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN

25°C
2.0 k 25°C 2.0 k
-55°C
-55°C
1.0 k 1.0 k
800 800
600 600
400 400
300 300
0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
3.4 3.4
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

TJ = 25°C TJ = 25°C
IC =
3.0 3.0
0.5 A
1.0 A 2.0 A 4.0 A IC =
2.6 2.6 0.5 A 1.0 A 2.0 A 4.0 A
2.2 2.2
1.8 1.8
1.4 1.4
1.0 1.0
0.6 0.6
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
2.2 2.2
TJ = 25°C TJ = 25°C
1.8 1.8
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 250

1.4 VBE(sat) @ IC/IB = 250 1.4 VBE @ VCE = 3.0 V
VBE @ VCE = 3.0 V
1.0 1.0
VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250
0.6 0.6
0.2 0.2
0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0
Figure 10. “On” Voltages
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NPN PNP
TIP110, 111, 112 TIP115, 116, 117
+0.8 +0.8
θV, TEMPERATURE COEFFICIENTS (mV/°C)
θV, TEMPERATURE COEFFICIENTS (mV/°C)

*APPLIES FOR IC/IB ≤ hFE/3 *APPLIES FOR IC/IB ≤ hFE/3
0 0
-0.8 -0.8 25°C to 150°C
-1.6 25°C to 150°C -1.6 *θVC for VCE(sat)
-2.4 *θVC for VCE(sat) -55°C to 25°C

-2.4
-55°C to 25°C
-3.2 25°C to 150°C -3.2 25°C to 150°C
θVC for VBE -55°C to 25°C
-55°C to 25°C θVC for VBE
-4.0 -4.0
-4.8 -4.8
0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0
Figure 11. Temperature Coefficients
105 105
REVERSE FORWARD REVERSE FORWARD
104 104
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)

µ
103 103 VCE = 30 V

VCE = 30 V
102 102
TJ = 150°C
TJ = 150°C
101 101
100°C
100 100°C 100
25°C 25°C
10-1 10-1
-0.6 -0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2 +1.4 -0.6 -0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2 +1.4
VBE, BASEEMITTER VOLTAGE (VOLTS) VBE, BASEEMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut-Off Region

TEST CIRCUIT VOLTAGE AND CURRENT WAVEFORMS
tw ≈ 3.5 ms (SEE NOTE A)

VCE MONITOR
0V
INPUT
VOLTAGE
MJE254 RBB1 100 mH -5 V
INPUT TUT 100 ms
2kΩ +
VCC = 20 V 0.71 A
50 Ω - COLLECTOR
RBB2 IC
50 Ω CURRENT
100 Ω MONITOR 0V
VBB1 = 10 V + RS = VCER
VBB2 = 0 0.1 Ω
- COLLECTOR
VOLTAGE
20 V
VCE(sat)
Note A: Input pulse width is increased until ICM = 0.71 A,
NPN test shown; for PNP test
reverse all polarity and use MJE224 driver.
Figure 13. Inductive Load Switching
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6
PACKAGE DIMENSIONS
TO–220AB
CASE 221A–09
ISSUE AA
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER NOTES:
4. COLLECTOR SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
–T– PLANE
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
T S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
A DIM MIN MAX MIN MAX
Q A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
L R N 0.190 0.210 4.83 5.33
V Q 0.100 0.120 2.54 3.04
J R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D U 0.000 0.050 0.00 1.27
N V 0.045 --- 1.15 ---
Z --- 0.080 --- 2.04
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changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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8
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VCE(sat) = 2.5 Vdc (Max) @ IC

 Semiconductor Components Industries, LLC, 2002 1 Publication Order Number:

PD, POWER DISSIPATION (WATTS)

Figure 1. Power Derating

Figure 2. Switching Times Test Circuit Figure 3. Switching Times

Figure 4. Thermal Response

ACTIVE–REGION SAFE–OPERATING AREA

IC, COLLECTOR CURRENT (AMPS)

CURVES APPLY BELOW TIP115 CURVES APPLY BELOW TIP110

Figure 5. TIP115, 116, 117 Figure 6. TIP110, 111, 112

There are two limitations on the power handling ability of 200

operation; i.e., the transistor must not be subjected to greater 70

hFE , DC CURRENT GAIN

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 250

θV, TEMPERATURE COEFFICIENTS (mV/°C)

-0.8 -0.8 25°C to 150°C

-1.6 25°C to 150°C -1.6 *θVC for VCE(sat)

-2.4 *θVC for VCE(sat) -55°C to 25°C

Figure 11. Temperature Coefficients

IC, COLLECTOR CURRENT (A)

103 103 VCE = 30 V

Figure 12. Collector Cut-Off Region

tw ≈ 3.5 ms (SEE NOTE A)

Figure 13. Inductive Load Switching

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Datasheets for electronics components.

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