BPW96B, BPW96C

Vishay Semiconductors

Silicon NPN Phototransistor, RoHS Compliant

FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• High photo sensitivity
• High radiant sensitivity
94 8391
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 20°
DESCRIPTION • Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
BPW96 is a silicon NPN phototransistor with high radiant
sensitivity in clear, T-1¾ plastic package. It is sensitive to
APPLICATIONS
visible and near infrared radiation.
• Detector in electronic control and drive circuits

PRODUCT SUMMARY
COMPONENT Ica (mA) ϕ (deg) λ0.1 (nm)
BPW96B 2.5 to 7.5 ± 20 450 to 1080
BPW96C 4.5 to 15 ± 20 450 to 1080
Note
Test condition see table “Basic Characteristics”

ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
BPW96B Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
BPW96C Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
Note
MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS

PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Collector emitter voltage VCEO 70 V
Emitter collector voltage VECO 5 V
Collector current IC 50 mA
Collector peak current tp/T ≤ 0.5, tp ≤ 10 ms ICM 100 mA
Power dissipation Tamb ≤ 47 °C PV 150 mW
Junction temperature Tj 100 °C
Operating temperature range Tamb - 40 to + 100 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature t≤3s Tsd 260 °C
Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm2 RthJA 350 K/W
Note
Tamb = 25 °C, unless otherwise specified

Document Number: 81532 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com

Rev. 1.7, 05-Sep-08 419
BPW96B, BPW96C
Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant

200
PV - Power Dissipation (mW)

160

120
RthJA
80

40

0
0 20 40 60 80 100
94 8300 Tamb - Ambient Temperature (°C)

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

BASIC CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Collector emitter breakdown voltage IC = 1 mA V(BR)CEO 70 V
Collector emitter dark current VCE = 20 V, E = 0 ICEO 1 200 nA
Collector emitter capacitance VCE = 5 V, f = 1 MHz, E = 0 CCEO 3 pF
Angle of half sensitivity ϕ ± 20 deg
Wavelength of peak sensitivity λp 850 nm
Range of spectral bandwidth λ0.1 450 to 1080 nm
Ee = 1 mW/cm2, λ = 950 nm,
Collector emitter saturation voltage VCEsat 0.3 V
IC = 0.1 mA
Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ω ton 2.0 µs
Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ω toff 2.3 µs
Cut-off frequency VS = 5 V, IC = 5 mA, RL = 100 Ω fc 180 kHz
Note
Tamb = 25 °C, unless otherwise specified

TYPE DEDICATED CHARACTERISTICS

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Ee = 1 mW/cm2, λ = 950 nm, BPW96B Ica 2.5 4.5 7.5 mA
Collector light current
VCE = 5 V BPW96C Ica 4.5 8 15 mA

www.vishay.com For technical questions, contact: detectortechsupport@vishay.com Document Number: 81532

420 Rev. 1.7, 05-Sep-08
 BPW96B, BPW96C
Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors

BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified

104 10
Ee = 1 mW/cm²

Ica - Collector Light Current (mA)

BPW96B
ICEO - Collector Dark Current (nA)

103 0.5 mW/cm²

VCE = 20 V 0.2 mW/cm²

102 1
0.1 mW/cm²

101
0.05 mW/cm²

λ = 950 nm
10 0.1
20 40 60 80 100 0.1 1 10 100
94 8304 Tamb - Ambient Temperature (°C) 94 8297 V CE - Collector Emitter Voltage (V)

Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 5 - Collector Light Current vs. Collector Emitter Voltage

C CEO - Collector Emitter Capacitance (pF)

2.0 10

1.8
Ica rel - Relative Collector Current

8
VCE = 5 V f = 1 MHz
1.6 Ee = 1 mW/cm2
λ = 950 nm
6
1.4

1.2 4

1.0
2
0.8

0.6 0
0 20 40 60 80 100 0.1 1 10 100
94 8239 Tamb - Ambient Temperature (°C) 94 8301 V CE - Collector Emitter Voltage (V)

Fig. 3 - Relative Collector Current vs. Ambient Temperature Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage

10 8
ton/toff - Turn-on/Turn-off Time (µs)

BPW96B
Ica - Collector Light Current (mA)

BPW96C
VCE = 5 V
6 RL = 100 Ω
1 λ = 950 nm

0.1 toff
2
V CE = 5 V ton
λ = 950 nm
0.01 0
0.01 0.1 1 10 0 2 4 6 8 10 12 14
94 8296 Ee - Irradiance (mW/cm2) 94 8293 IC - Collector Current (mA)

Fig. 4 - Collector Light Current vs. Irradiance Fig. 7 - Turn-on/Turn-off Time vs. Collector Current

Document Number: 81532 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com

Rev. 1.7, 05-Sep-08 421
BPW96B, BPW96C
Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant

0° 10° 20°
30°
S (λ)rel - Relative Spectral Sensitivity

1.0

Srel - Relative Radiant Sensitivity

ϕ - Angular Displacement
0.8
40°
1.0
0.6
0.9 50°
0.4
0.8 60°
0.2 70°
0.7
80°
0
400 600 800 1000 0.6 0.4 0.2 0
94 8348 λ - Wavelength (nm) 94 8299

Fig. 8 - Relative Spectral Sensitivity vs. Wavelength Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement

PACKAGE DIMENSIONS in millimeters

± 0.15
5.75

C E

Chip position
Ø5 ± 0.15

re)
(4.8)

he
5 (sp
2.4
R
± 0.15
± 0.3
± 0.3

7.6
8.6
12.3
± 0.5
35.3

< 0.7

Area not plane

+ 0.2
0.8 - 0.1
+ 0.2
1 - 0.1

+ 0.15
0.5
± 0.25
1.5

+ 0.2
0.63 - 0.1

2.54 nom. technical drawings

according to DIN
specifications

Drawing-No.: 6.544-5086.01-4
Issue:1; 01.07.96
96 12192

www.vishay.com For technical questions, contact: detectortechsupport@vishay.com Document Number: 81532

422 Rev. 1.7, 05-Sep-08
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Revision: 18-Jul-08 1