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MOC3020 THRU MOC3023 OPTOCOUPLERS/OPTOISOLATORS

SOES025A OCTOBER 1986 REVISED APRIL 1998

D D D D D D D

400 V Phototriac Driver Output Gallium-Arsenide-Diode Infrared Source and Optically-Coupled Silicon Traic Driver (Bilateral Switch) UL Recognized . . . File Number E65085 High Isolation . . . 7500 V Peak Output Driver Designed for 220 Vac Standard 6-Terminal Plastic DIP Directly Interchangeable with Motorola MOC3020, MOC3021, MOC3022, and MOC3023

MOC3020 MOC3023 . . . PACKAGE (TOP VIEW)

ANODE CATHODE NC

1 2 3

6 5 4

MAIN TERM TRIAC SUB MAIN TERM

Do not connect this terminal NC No internal connection

logic diagram
1 6

typical 115/240 Vac(rms) applications D Solenoid/Valve Controls D Lamp Ballasts D Interfacing Microprocessors to 115/240 Vac Peripherals D Motor Controls D Incandescent Lamp Dimmers

absolute maximum ratings at 25C free-air temperature (unless otherwise noted)


Input-to-output peak voltage, 5 s maximum duration, 60 Hz (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . 7.5 kV Input diode reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 V Input diode forward current, continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Output repetitive peak off-state voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 V Output on-state current, total rms value (50-60 Hz, full sine wave): TA = 25C . . . . . . . . . . . . . . . . . . . 100 mA TA = 70C . . . . . . . . . . . . . . . . . . . . 50 mA Output driver nonrepetitive peak on-state current (tw = 10 ms, duty cycle = 10%, see Figure 7) . . . . . . 1.2 A Continuous power dissipation at (or below) 25C free-air temperature: Infrared-emitting diode (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW Phototriac (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Total device (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 330 mW Operating junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40C to 100C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40C to 150C Lead temperature 1,6 (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. Input-to-output peak voltage is the internal device dielectric breakdown rating. 2. Derate linearly to 100C free-air temperature at the rate of 1.33 mW/C. 3. Derate linearly to 100C free-air temperature at the rate of 4 mW/C. 4. Derate linearly to 100C free-air temperature at the rate of 4.4 mW/C.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Copyright 1998, Texas Instruments Incorporated

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MOC3020 THRU MOC3023 OPTOCOUPLERS/OPTOISOLATORS


SOES025A OCTOBER 1986 REVISED APRIL 1998

electrical characteristics at 25C free-air temperature (unless otherwise noted)


PARAMETER IR VF I(DRM) dv/dt dv/dt(c) Static reverse current Static forward voltage Repetitive off-state current, either direction Critical rate of rise of off-state voltage Critical rate of rise of commutating voltage MOC3020 IFT Input trigger current, gg , either direction MOC3021 MOC3022 MOC3023 VTM IH Peak on-state voltage, either direction Holding current, either direction ITM = 100 mA Output supply voltage = 3 V VR = 3 V IF = 10 mA V(DRM) = 400 V, See Figure 1 IO = 15 mA, See Note 5 See Figure 1 TEST CONDITIONS MIN TYP 0.05 1.2 10 100 0.15 15 8 5 3 1.4 100 30 15 10 5 3 V A mA MAX 100 1.5 100 UNIT A V nA V/s V/s

NOTE 5: Test voltage must be applied at a rate no higher than 12 V/s.

PARAMETER MEASUREMENT INFORMATION


VCC

Vin = 30 Vrms RL

2 10 k Input (see Note A) 2N3904

NOTE A. The critical rate of rise of off-state voltage, dv/dt, is measured with the input at 0 V. The frequency of Vin is increased until the phototriac turns on. This frequency is then used to calculate the dv/dt according to the formula:

dv dt

+2

2 fV

in

The critical rate of rise of commutating voltage, dv/dt(c), is measured by applying occasional 5-V pulses to the input and increasing the frequency of Vin until the phototriac stays on (latches) after the input pulse has ceased. With no further input pulses, the frequency of Vin is then gradually decreased until the phototriac turns off. The frequency at which turn-off occurs may then be used to calculate the dv/dt(c) according to the formula shown above.

Figure 1. Critical Rate of Rise Test Circuit

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MOC3020 THRU MOC3023 OPTOCOUPLERS/OPTOISOLATORS


SOES025A OCTOBER 1986 REVISED APRIL 1998

TYPICAL CHARACTERISTICS
EMITTING-DIODE TRIGGER CURRENT (NORMALIZED) vs FREE-AIR TEMPERATURE
1.4 Emitting-Diode Trigger Current (Normalized) 800 600 I TM Peak On-State Current mA 400 200 0 200 400 600 0.8 50 25 0 25 50 75 100 800 3

ON-STATE CHARACTERISTICS
Output tw = 800 s IF = 20 mA f = 60 Hz TA = 25C

1.3

1.2

1.1

0.9

TA Free-Air Temperature C

2 1 0 1 2 VTM Peak On-State Voltage V

Figure 2

Figure 3
NONREPETITIVE PEAK ON-STATE CURRENT vs PULSE DURATION

I TSM Nonrepetitive Peak On-State Current mA

3 TA = 25C

0 0.01

0.1 1 10 tw Pulse Duration ms

100

Figure 4

POST OFFICE BOX 655303

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MOC3020 THRU MOC3023 OPTOCOUPLERS/OPTOISOLATORS


SOES025A OCTOBER 1986 REVISED APRIL 1998

APPLICATIONS INFORMATION
RL 6 180

Rin VCC

MOC3020, MOC3023 1

220 V, 60 Hz 2 4

Figure 5. Resistive Load

Rin VCC

MOC3020, MOC3023 1 6

ZL 180 2.4 k

0.1 F 2 4

220 V, 60 Hz

IGT 15 mA

Figure 6. Inductive Load With Sensitive-Gate Triac

Rin VCC

MOC3020, MOC3023 1 6

ZL 180 1.2 k

0.2 F 2 4

220 V, 60 Hz

15 mA < IGT < 50 mA

Figure 7. Inductive Load With Nonsensitive-Gate Triac

POST OFFICE BOX 655303

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MOC3020 THRU MOC3023 OPTOCOUPLERS/OPTOISOLATORS


SOES025A OCTOBER 1986 REVISED APRIL 1998

MECHANICAL INFORMATION
Each device consists of a gallium-arsenide infrared-emitting diode optically coupled to a silicon phototriac mounted on a 6-terminal lead frame encapsulated within an electrically nonconductive plastic compound. The case can withstand soldering temperature with no deformation and device performance characteristics remain stable when operated in high-humidity conditions.
9,40 (0.370) 8,38 (0.330)
6 5 4

Index Dot (see Note B) C L C L


1 2 3

7,62 (0.300) T.P. (see Note A) 6,61 (0.260) 6,09 (0.240) 5,46 (0.215) 2,95 (0.116)

1,78 (0.070) 0,51 (0.020)

1,78 (0.070) MAX 6 Places

105 90 0,305 (0.012) 0,203 (0.008)

Seating Plane 1,01 (0.040) MIN 3,81 (0.150) 3,17 (0.125) 2,03 (0.080) 1,52 (0.060) 4 Places 2,54 (0.100) T.P. (see Note A) 0,534 (0.021) 0,381 (0.015) 6 Places

NOTES: A. B. C. D.

Leads are within 0,13 (0.005) radius of true position (T.P.) with maximum material condition and unit installed. Pin 1 identified by index dot. The dimensions given fall within JEDEC MO-001 AM dimensions. All linear dimensions are given in millimeters and parenthetically given in inches.

Figure 8. Packaging Specifications

POST OFFICE BOX 655303

DALLAS, TEXAS 75265

MOC3020 THRU MOC3023 OPTOCOUPLERS/OPTOISOLATORS


SOES025A OCTOBER 1986 REVISED APRIL 1998

POST OFFICE BOX 655303

DALLAS, TEXAS 75265

IMPORTANT NOTICE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TIs standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (CRITICAL APPLICATIONS). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO BE FULLY AT THE CUSTOMERS RISK. In order to minimize risks associated with the customers applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards. TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. TIs publication of information regarding any third partys products or services does not constitute TIs approval, warranty or endorsement thereof.

Copyright 1998, Texas Instruments Incorporated