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Product Specification
PowerMOS transistor
BUK453-100A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.
PINNING - TO220AB
PIN 1 2 3 tab gate drain source drain DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
d
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 k Tmb = 25 C Tmb = 100 C Tmb = 25 C Tmb = 25 C MIN. - 55 -100A 14 10 56 75 175 175 MAX. 100 100 30 -100B 13 9 52 UNIT V V V A A A W C C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 60 MAX. 2 UNIT K/W K/W
April 1998
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK453-100A/B
STATIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 1 mA VDS = 100 V; VGS = 0 V; Tj = 25 C VDS = 100 V; VGS = 0 V; Tj = 125 C VGS = 30 V; VDS = 0 V VGS = 10 V; BUK453-100A BUK453-100B ID = 5 A MIN. 100 2.1 TYP. 3.0 1 0.1 10 0.15 0.15 MAX. 4.0 10 1.0 100 0.16 0.20 UNIT V V A mA nA
DYNAMIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL gfs Ciss Coss Crss td on tr td off tf Ld Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance CONDITIONS VDS = 25 V; ID = 5 A VGS = 0 V; VDS = 25 V; f = 1 MHz VDD = 30 V; ID = 3 A; VGS = 10 V; RGS = 50 ; Rgen = 50 Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad MIN. 4.0 TYP. 5.5 660 140 60 10 25 60 40 3.5 4.5 7.5 MAX. 825 200 100 20 40 90 55 UNIT S pF pF pF ns ns ns ns nH nH nH
April 1998
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK453-100A/B
PD%
1E+01
ZTHX53
1E+00
1E-01
20
40
60
80 100 Tmb / C
120
140
160
180
1E-02 1E-07
1E-05
1E-03 t/s
1E-01
1E+01
28 24 20 16 12
6 8 4 4
0 20 40 60 80 100 Tmb / C 120 140 160 180
5 0 2 4 VDS / V 6 8 10
Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 C = f(Tmb); conditions: VGS 10 V
ID / A
VD S/ ID
100
BUK453-100
A B
1.0
RD
O S(
= N)
tp = 10 us 100 us DC 1 ms 10 ms 100 ms
0.8
10
0.6
0.2
0.1 1
10
VDS / V
0
100
12 16 ID / A
20
24
28
Fig.3. Safe operating area. Tmb = 25 C ID & IDM = f(VDS); IDM single pulse; parameter tp
April 1998
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK453-100A/B
28 24 20 16 12 8
ID / A
BUK453-100A
4
VGS(TO) / V max.
Tj / C =
25 150
3 min. 2 typ.
4 0
0
4 VGS / V
10
-60
-20
20
60 Tj / C
100
140
180
Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
ID / A SUB-THRESHOLD CONDUCTION
7 6 5 4 3 2
gfs / S
BUK453-100A
1E-01
1E-02
1E-03
2%
typ
98 %
1E-04
1E-05
1 0 0 4 8 12 16 ID / A 20 24 28
1E-06 0 1 2 VGS / V 3 4
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0
10000
C / pF
BUK4y3-100
1000 Ciss
100
Coss Crss
-60
-20
20
60 Tj / C
100
140
180
10 0 20 VDS / V 40
Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
April 1998
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK453-100A/B
VGS / V 12 10 8 6 4 2 0 0 2 4 6 8 10 QG / nC 12
WDSS%
14
16
20
40
60
80
140
160
180
Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 14 A; parameter VDS
IF / A BUK453-100A
30
+
L
20
VDD
VDS VGS
10 Tj / C = 150 25
0 RGS
0 0 1 VSDS / V 2
Fig.16. Avalanche energy test circuit. 2 WDSS = 0.5 LID BVDSS /(BVDSS VDD )
April 1998
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK453-100A/B
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
3,7 2,8
5,9 min
15,8 max
3,0
13,5 min
1,3 max 1 2 3 (2x)
2,54 2,54
0,6 2,4
April 1998
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK453-100A/B
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
April 1998
Rev 1.100