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-30...+85 C
PG-DSO-36
Application
Output driver for industrial applications ( PLC ) All types of resistive, inductive and capacitive loads C or optocoupler compatible power switch for 24 V DC industrial applications Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS or Vbb/2 compatible input and common diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
2006-03-09
Page 1
ITS 4880 R
Block Diagram
D IA G V bb LS U ndervoltage shutdow n w ith restart
C om m on D iagnostic
V oltage source
O vervoltage protection
C urrent lim it
IN 1 R IN IN 2
O U T7
Logic
m iniP R O FET
S ignal G N D
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ITS 4880 R
Pin
Symbol
Function
NC LS IN1 IN2 IN3 IN4 IN5 IN6 IN7 IN8 NC GND DIAG OUT8 OUT8 OUT7 OUT7 OUT6 OUT6 OUT5 OUT5 OUT4 OUT4 OUT3 OUT3 OUT2 OUT2 OUT1 OUT1 Vbb
not connected Enable pin for switching the input-levels to V bb/2 Input, activates channel 1 in case of logic high signal Input, activates channel 2 in case of logic high signal Input, activates channel 3 in case of logic high signal Input, activates channel 4 in case of logic high signal Input, activates channel 5 in case of logic high signal Input, activates channel 6 in case of logic high signal Input, activates channel 7 in case of logic high signal Input, activates channel 8 in case of logic high signal not connected Logic ground Common diagnostic output for overtemperature High-side output of channel 8 High-side output of channel 8 High-side output of channel 7 High-side output of channel 7 High-side output of channel 6 High-side output of channel 6 High-side output of channel 5 High-side output of channel 5 High-side output of channel 4 High-side output of channel 4 High-side output of channel 3 High-side output of channel 3 High-side output of channel 2 High-side output of channel 2 High-side output of channel 1 High-side output of channel 1 Positive power supply voltage
Page 3
2006-03-09
ITS 4880 R Maximum Ratings Parameter at Tj = -40...135 C, unless otherwise specified Symbol Vbb VIN VLS IL IIN Value Unit
Supply voltage Continuous input voltage2) Continuous voltage at LS-pin Load current (Short - circuit current, see page 6) Current through input pin (DC), each channel Reverse current through GND-pin 1)
Junction temperature Operating temperature Storage temperature
A mA A C C C W J
-IGND
Tj Ta Tstg Ptot EAS
Power dissipation 3) Inductive load switch-off energy dissipation 4) single pulse, Tj = 125 C, IL = 0.625 A one channel active all channels simultaneously active ( each channel ) Load dump protection 4) VLoadDump5)= VA + VS
VIN= low or high
10 1
VLoaddump
V 90 117
VESD 1 5 IS
kV
Input pin, LS pin, Common diagnostic pin all other pins Continuous reverse drain current1)4), each channel
1defined by P tot 2At V > Vbb, the input current is not allowed to exceed 5 mA. IN
3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. 4not subject to production test, specified by design 5V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 . Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a 150 resistor in GND connection. A resistor for the protection of the input is integrated.
Page 4
2006-03-09
ITS 4880 R Electrical Characteristics Parameter at Tj = -25...125C, Vbb=15...30V, unless otherwise specified Thermal Characteristics Symbol min. RthJC Rth(JA) Rth(JA) Values typ. max. Unit
Thermal resistance junction - case Thermal resistance @ min. footprint Thermal resistance @ 6 cm 2 cooling area 1)
Load Switching Capabilities and Characteristics
1.5 50 38
K/W
On-state resistance
Tj = 25 C, IL = 0.5 A Tj = 125 C
RON
RL = 47 , V IN = 0 to 10 V RL = 47 , V IN = 10 to 0 V RL = 47 , V bb = 15 V RL = 47 , V bb = 15 V
1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air.
Page 5
2006-03-09
ITS 4880 R Electrical Characteristics Parameter at Tj = -25...125C, Vbb=15...30V, unless otherwise specified Operating Parameters Symbol min. Vbb(on) Vbb(under) Vbb(u rst) Vbb(under) Ibb(off) IGND IL(off) Values typ. max. Unit
11 7 -
0.5 50 5 5
45 10.5 11 150 12 10
A mA A
IL(SCp)
Repetitive short circuit current limit Tj = Tjt (see timing diagrams) Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), Overvoltage protection 3) Thermal overload trip temperature 4) Thermal hysteresis
47 47 135 -
1contains all input currents 2Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 3 see also V ON(CL) in circuit diagram on page 10 4 higher operating temperature at normal function for each channel available
Page 6
2006-03-09
ITS 4880 R Electrical Characteristics Parameter at Tj = -25...125C, Vbb=15...30V, unless otherwise specified Input Symbol min. VIN VIN(T+) VIN(T-) VIN(T+) VIN(T-) VIN(T) IIN(off) IIN(on) IIN(off) IIN(on) td(Vbbon) RI RLS Values typ. max. Vbb Unit
Continuous input voltage1) Input turn-on threshold voltage CMOS 2) Input turn-off threshold voltage CMOS 2) Input turn-on threshold voltage V bb/2 2) Input turn-off threshold voltage Vbb/22) Input threshold hysteresis Off state input current CMOS ( each channel ) On state input current CMOS ( each channel ) Off state input current V bb/2 ( each channel ) On state input current Vbb/2 ( each channel ) Input delay time at switch on Vbb Input resistance (see page 10) Internal pull down resistor at LS-pin 3)
Diagnostic Characteristics
2.2 V bb/2+1
70 260 4 s
k
8 80 150 2 300
I diag
mA
I diag(high)
1At V > Vbb, the input current is not allowed to exceed 5 mA. IN 2see page 9 3LS-pin is connected to V bb 4see page 10
Page 7
2006-03-09
ITS 4880 R Electrical Characteristics Parameter at Tj = -25...125C, Vbb=15...30V, unless otherwise specified Reverse Battery Symbol min. Values typ. max. Unit
1defined by P tot
Page 8
2006-03-09
Output level L H L L L L L L
Diagnostic L L L L L L L H1)
IN
V bb
Logic
LS
GND
Page 9
2006-03-09
VON
IN
Z2
L o g ic
ST
I GND
I
GND
R GND
o p tio n a l
The use of ESD zener diodes as voltage clamp at DC conditions is not recommended
S ig n a l G N D
IN
OUT L o g ic
Power In v e r s e D io d e
Logic
DIAG
GND RGND
o p ti o n a l S ig n a l G N D
RL
Power GND
ESD
RGND=150, RI=3k typ., Temperature protection is not active during inverse current Output current typ. 2 mA
Page 10
2006-03-09
ITS 4880 R GND disconnect Inductive Load switch-off energy dissipation, each channel
E bb
LS IN1...8
Vbb PROFET
DIAG OUT1...8
IN Vbb PROFET GND OUT
E AS E Load
GND V bb V IN V GND
=
ZL
{
RL
EL
ER
While demagnetizing load inductance, the enrgy dissipated in PROFET is E AS = E bb + EL - ER = VON(CL) * iL(t) dt, with an approximate solution for RL > 0:
E AS =
V bb V IN V ST V GND
IL * R L IL * L ) * ( V b b + | V O U T ( C L )| ) * ln (1 + | V O U T ( C L )| 2 * RL
LS high IN1...8
DIAG OUT1...8
bb
Page 11
2006-03-09
ITS 4880 R Typ. on-state resistance RON = f(Tj) ; Vbb = 15V ; V in = high
0.3
RON
0.2
RON
0.2
25C
0.15
0.15
0.1
0.1
-25C
0.05
0.05
0 -25
25
50
75
C Tj
125
0 10
15
20
25
30
35
40
V Vbb
50
Typ. initial peak short circuit current limit IL(SCp) = f(Tj) ; Vbb = 24V
2
A
1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -25 0 10 0.1 0.2
ms
td(Vbbon)
0 25 50 75
IL(SCp)
0.3
C Tj
125
15
20
25
30
35
40
V Vbb
50
Page 12
2006-03-09
s
80 70
s
80 70
ton
60 50 40 30 20 10 0 -25
toff
0 25 50 75 125
60 50 40 30 20 10 0 -25
C Tj
25
50
75
C Tj
125
0.8
0.6
0.4
C Tj
0 -25
25
50
75
C Tj
125
Page 13
2006-03-09
ITS 4880 R Typ. standby current Ibb(off) = f(Tj ) ; Vbb = 30V ; VIN = low
50
A
A
3
Ibb(off)
I L(off)
30
2.5
2 20
1.5
1 10 0.5
0 -25
25
50
75
C Tj
125
0 -25
25
50
75
C Tj
125
Typ. internal pull down resistor at LS-pin RLS = f(Vbb ); VLS = Vbb
1.5
mA
125C
I diag
RLS
2.8
25C
-25C
2.6
0.25
2.5 10
15
20
25
30
35
45 V Vbb
0 10
15
20
25
30
35
40
V Vbb
50
Page 14
2006-03-09
ITS 4880 R Typ. input current @ CMOS level IIN(on/off) = f(Tj); Vbb = 15V; VIN = low/high VINlow 0,8V; VINhigh = 2,2V
50 50
-25C
on
A
25C
IIN
IIN
30
off
30
125C
20
20
10
10
0 -25
25
50
75
C Tj
125
0 0
2.5
7.5
10
V VIN
15
Typ. input current @ Vbb/2 level IIN(on/off) = f(Tj); Vbb = 30V; VIN = low/high
180
A
on
-25C
off
150
25C
I IN
I IN
125
125C
100 80 75 60 40 20 0 -25 50
25
25
50
75
C Tj
125
0 0
10
15
20
V VIN
30
Page 15
2006-03-09
ITS 4880 R Typ. input threshold voltage @ CMOS level VIN(th) = f(Tj ) ; Vbb = 15V
2
V
on
on
1.6 1.5
VIN(th)
off
VIN(th)
off
1.25
0.75
25
50
75
C Tj
125
0 10
15
20
25
30
35
40
V Vbb
50
Typ. input threshold voltage @ Vbb/2 level VIN(th) = f(Tj ) ; Vbb = 30V
16
Typ. input threshold voltage @ Vbb/2 level: LS-pin connected to V bb VIN(th) = f(V bb) ; Tj = 25C
25
V
on
15
20
off
VIN(th)
14.5
VIN(th)
on
17.5
off
14
15
13.5
12.5
13
10
12.5
7.5
12 -25
25
50
75
C Tj
125
5 10
15
20
25
30
35
40
V Vbb
50
Page 16
2006-03-09
ITS 4880 R Maximum allowable load inductance for a single switch off , calculated L = f(IL); Tjstart =125C, Vbb=24V, RL=0
45
Maximum allowable inductive switch-off energy, single pulse EAS = f(IL ); Tjstart = 125C, Vbb = 24V
3.5
all channels simultaneously active
H
35
2.5
EAS
2 1.5 1 0.5 300 400 500 600
30 25 20 15 10 5 0 200
mA IL
800
0 200
300
400
500
600
mA IL
800
Parameter: D=tp/T
10
2
Parameter: D=tp/T
10 2
K/W
D = 0.5 D = 0.2
K/W
D = 0.5
10 1
10 1
Z thJA
10 0
Z thJA
D = 0.1
10 0 D = 0.02
D = 0.01
10 -1
D=0
10 -1
D=0
10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 10
10
10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 10
10
tp
Page 17
tp
2006-03-09
ITS 4880 R
Timing diagrams
Figure 1a: Vbb turn on:
IN
Vb b
OUT
D IA G t
DIAG
t d (V b b o n )
Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition
IN
IN
O U T
90% t on d V /d to n 10% t d V / d to ff
VO U T
o ff
IL
IL
D IA G
D IAG
Page 18
2006-03-09
ITS 4880 R
Figure 3a: Turn on into short circuit, shut down by overtemperature, restart by cooling
IN
Figure 3b: Short circuit in on-state shut down by overtemperature, restart by cooling
IN
OUT
V
O u tp u t s h o r t to G N D
OUT
n o rm a l o p e r a tio n
O u tp u t s h o r t to G N D
L (S C p )
I
I L (S C r)
L (S C r)
D IA G t
D IA G t
Heating up of the chip may require several milliseconds, depending on external conditions.
IN
V OUT
10,5V
Vbb
Vout
TJ
DIAG t
D IA G t
t d(Vbbon)
Page 19
2006-03-09
ITS 4880 R
SP000219527
C
+0.07 0.25 -0.02
1.3
3.5 max.
1.10.1
110.15 1) 2.8
0.1
0.25 B
13.7 -0.2
3.2 0.1
36
CODE
19
Index Marking
1 0.65 1 45
18 +0.13 0.25
5.9 0.1
0.25 M C A B
17 0.65 = 11.05
1)
Does not include plastic or metal protrusion of 0.15 max. per side
Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 Mnchen Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 20
5 0.3
+0.1
2006-03-09