BSS138

October 2005

BSS138
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Features
0.22 A, 50 V. RDS(ON) = 3.5 @ VGS = 10 V RDS(ON) = 6.0 @ VGS = 4.5 V High density cell design for extremely low RDS(ON) Rugged and Reliable Compact industry standard SOT-23 surface mount package

S
G S

SOT-23

G
TA=25oC unless otherwise noted

Absolute Maximum Ratings

Symbol
VDSS VGSS ID PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation Derate Above 25C

Parameter

Ratings
50 20
(Note 1)

Units
V V A W mW/C C C

0.22 0.88 0.36 2.8 55 to +150 300

(Note 1)

Operating and Storage Junction Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16 from Case for 10 Seconds

Thermal Characteristics
RJA Thermal Resistance, Junction-to-Ambient
(Note 1)

350

C/W

Package Marking and Ordering Information

Device Marking SS Device BSS138 Reel Size 7 Tape width 8mm Quantity 3000 units

2005 Fairchild Semiconductor Corporation

BSS138 Rev C(W)

BSS138

Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS

TA = 25C unless otherwise noted

Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current

Test Conditions
ID = 250 A VGS = 0 V, ID = 250 A,Referenced to 25C VDS = 50 V, VDS = 30 V, VGS = 0 V VGS = 0 V VDS = 0 V

Min Typ Max

50 72 0.5 5 100 100

Units
V mV/C A A nA nA

Off Characteristics

VDS = 50 V, VGS = 0 V TJ = 125C IGSS GateBody Leakage.

(Note 2)

VGS = 20 V,

On Characteristics
VGS(th) VGS(th) TJ RDS(on)

Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance

VDS = VGS,

ID = 1 mA

0.8

ID = 1 mA,Referenced to 25C ID = 0.22 A VGS = 10 V, ID = 0.22 A VGS = 4.5 V, VGS = 10 V, ID = 0.22 A, TJ = 125C VGS = 10 V, VDS = 5 V VDS = 10V, ID = 0.22 A

1.3 2 0.7 1.0 1.1

1.5

V mV/C

3.5 6.0 5.8

ID(on) gFS

0.2 0.12 0.5

A S

Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)

VDS = 25 V, f = 1.0 MHz

V GS = 0 V,

27 13 6 9

pF pF pF

VGS = 15 mV, f = 1.0 MHz

Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge

VDD = 30 V, VGS = 10 V,

ID = 0.29 A, RGEN = 6

2.5 9 20 7

5 18 36 14 2.4

ns ns ns ns nC nC nC

VDS = 25 V, VGS = 10 V

ID = 0.22 A,

1.7 0.1 0.4

DrainSource Diode Characteristics and Maximum Ratings

IS VSD Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward Voltage VGS = 0 V, IS = 0.44 A(Note 2) 0.8 0.22 1.4 A V

Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.

a) 350C/W when mounted on a minimum pad..

Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

BSS138 Rev C(W)

BSS138

Typical Characteristics

VGS = 10V
0.8 ID, DRAIN CURRENT (A)

6.0V

3.4

4.5V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE

3.5V 3.0V

VGS = 2.5V
2.6 2.2

0.6

3.0V
1.8 1.4 1 0.6

2.5V
0.4

3.5V 4.0V 4.5V 6.0V 10V

0.2

2.0V

0 0 0.5 1 1.5 2 2.5 3 VDS, DRAIN TO SOURCE VOLTAGE (V)

0.2

0.4

0.6

0.8

ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.

4.1 RDS(ON), ON-RESISTANCE (OHM)

2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100
o

ID = 220mA VGS = 10V

ID = 110mA 3.5 2.9 TA = 125oC 2.3 1.7 TA = 25oC 1.1 0.5

125

150

10

TJ, JUNCTION TEMPERATURE ( C)

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Temperature.

0.6 0.5 ID, DRAIN CURRENT (A) 0.4 0.3 0.2 0.1 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) TA = -55 C
o

Figure 4. On-Resistance Variation with Gate-to-Source Voltage.

1 VGS = 0V

25 C 125oC

IS, REVERSE DRAIN CURRENT (A)

VDS = 10V

0.1 TA = 125oC 25oC 0.01 -55oC 0.001

0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.

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Typical Characteristics

10 VGS, GATE-SOURCE VOLTAGE (V) ID = 220mA 8

CAPACITANCE (pF)

100

VDS = 8V 30V

25V
80

f = 1 MHz VGS = 0 V

60

CISS
40

COSS
20

CRSS 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Qg, GATE CHARGE (nC)
0 0 10 20 30 40 50

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

10

Figure 8. Capacitance Characteristics.

5 P(pk), PEAK TRANSIENT POWER (W) SINGLE PULSE RJA = 350C/W TA = 25C

ID, DRAIN CURRENT (A)

100s RDS(ON) LIMIT 1ms 10ms 100ms 1s DC

0.1

0.01

VGS = 10V SINGLE PULSE RJA = 350oC/W TA = 25oC

0.001 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V)

0 0.001

0.01

0.1

1 t1, TIME (sec)

10

100

1000

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum Power Dissipation.

r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

1
D = 0.5 0.2

RJA(t) = r(t) * RJA RJA = 350 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
o

0.1

0.1 0.05 0.02 0.01

0.01
SINGLE PULSE

0.001 0.0001

0.001

0.01

0.1
t1, TIME (sec)

10

100

1000

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1a. Transient thermal response will change depending on the circuit board design.

BSS138 Rev C(W)

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Preliminary

First Production

No Identification Needed

Full Production

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I17