TOPIC - DOIDE OR PN JUNCTION

Q. With the help of V-I characteristics explain the working of semi conductor diode ? Or Explain the detail the V-I characteristics of a semi conductor diode. Or Draw & Explain the V-I characteristics of silicon diode. V-I

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Ans. A P-N junction is formed from a piece of semi conductor by diffusing p type material to one half side and n type material to other side. The characteristics is drawn between voltage and current across a diode known as the VI chart of a diode. The suitable circiut arrangement for drawing the volt amp character istica of diode shows. The characteristics of a diode we can divided into the two part. (i) Forward bias : with positive terminal of battery and cathode correct In the forward bias condition we connect the anode of diode

with negative terminal of battery when the potential from the diode increases by the varying variable resistance the deplection layer of diode is eliminated and current starts flowing. The voltage required for breaking deplection layer in SI ID 07 and 0.3 for ge type semi conductor. When the potential barrier is breath current rise very fast. Normally diode are used in forward bias condition. ii) Reverse bias : cathode and negative terminal of battery is connected anode of diode its condition called fu reverse bias condition at this very small on lakage current flow through the diode its flow due to minerally carrier if the reverse voltage the break down is occur and the current flow through the diode in reverse region is shown on the graph. When the positive terminal of battery is connected to the

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Q. What do you man by semi conductor ? What is doping ?

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Ans. We know that the material who whose maximum free electron is called conductor. There material those have no free electron called insulator. Actually semi conductor is material is behavior just a insulator in the originally condition but if we added some impurity in the semi conductor material then it works like the conductor because of presence of doping. The process of adding impurity in the semi conductor material called doping.

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Q. What do you mean by Zerer Diode ? Draw the character of zerer diode ?

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Q. What do you mean by Transistor ? Describe the element of transistor draw the characteristic of transistor or BJIT.

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Ans. It is the semi conductor device which are made of semi conductor material (si or ge) normally transistor are two type PNP and NPN J+ have tow junction so it called the Bipolar junction transistor or BJT. It have the three terminal called bare emitter and collector emitter those side emit the electron the called emittor. Collector : Bure : The layer which presents in between the emitter and collector called the base which create the two junction. The works is base to control the current in the collector.

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PNP

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Q.

What do you mean by Transistor configuration ? Discuss the different type of configuration for transistor ? Or Explain the working of BJIT in C B configuration. And Explain the working of C.C. configuration of BJIT?

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Ans. Transistor configuration. The transistors may be connected in any one of three basic configuration is common emitter, common base and common collector. The term common is used to detect the element that is common to both input and output circuits. Because the common element is often grounded there configuration are frequently reterred to as grounded matter ground base and grounded.

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Q. Give the emptoms directed for a transit in term of a and b.

Ans. The common emitter configuration shown in figure A is the arrangement most frequently used in practical amplifier circiuts, since it provides good voltage, current and power gain. The common emitter also has a somewhat low input resistance because the input is applied to the forward biased junction and a moderately high output resistance because the output is taken off the reverse biased junction. Since the input signal is applied to the base emitter circiut and the output is taken from the collector emitter circuit the emitter is the element common to both input and output.

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Common base : In this type of ctrl base is common in output and input signal. The input signal is given between the base and emittor and output is taken from the base and collector. This type ctrl is not used for amplification. This type clot is not used for amplification purpose. It is used in the voltage stabilizer circuit. Its provide constant output. The suitable clot arrangement is fig. B for PNP and NPN transistor.

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Common collector : In this of ctrl we provide the positive supply to the collector and the base is provided by constant supply using resistance so the collector terminal of transistort is common to both in put and output.

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Characteristics

C ,C E B

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Common emittor CE Medium high high 500 Reverse Tr Common collector CC High Low Very high Vry low Imphase For impedance

Configuration characteristics comparison : Common base CB Low Very high Low 160 In phase For high

Input impendence Output impendence Current gain Voltage gain Output signal

Application The transistor is solid state device, whose operation depends upon the flow of electric change carries within the solid. Q. What is current amplification and current of a transistor. reduction between and ? Give the

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Current Amplification () and Current gain factor ( ) Current Amplification factors : It is the ratio of collector current (IC) to emitter current (IE)
=
IC IE

Current amplification (transport factor) B : It is the ratio of collector current (IC) and base current (IB).
=
IC IE

Relation between and we know E = I B + I C

=
IC Divided by
1

IC IB

=1 +

IB 1 1+ =1 + = IC

So, = 1 + and =

1 IC IE

D.C. current gain A1 = Voltage gain AV = Power gain is = IC

VcE VBE VCE Vbe = A1 AV In

A Transistor with 0.98 gives a reverse saturation current

ICO = 10 uA is CB configuration. When transistor is used in CE

configuration with a base current at 0.22 MA. Calculate the collector current. Given that :
IB = 6.22 M , I =10 uA , = 0.53 A

IC =

Ico 0.58 0.01 p+ = 0.22 + 1 1 1 0.98 1 0.98

= 11.23 MA