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MPS8050
C BE
MPS8050
TO-92
Parameter
Value
25 40 6.0 1.0 -55 to +150
Units
V V V A C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJC RJA
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
MPS8050 625 5.0 83.3 200
Units
mW mW/C C/W C/W
MPS8050
Electrical Characteristics
Symbol Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICES Collector-Emitter Sustaining Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Collector-Cutoff Current I C = 30 mA, IB = 0 I C = 100 A, I E = 0 I E = 100 A, IC = 0 VCB = 35 V, IE = 0 VCE = 20 V, IE = 0 25 40 6.0 0.1 75 V V V A nA
ON CHARACTERISTICS
hFE DC Current Gain I C = 5.0 mA, VCE = 1.0 I C = 100 mA, VCE = 1.0 I C = 800 mA, VCE = 1.0 I C = 800 mA, IB = 80 mA I C = 800 mA, IB = 80 mA 45 80 40 300 0.5 1.2 V V
Typical Characteristics
V CESAT- COLLECTOR EMITTER VOLTAGE (V)
VCE = 1V
125 C
0.3
125 C
25 C
0.2
25 C
- 40 C
0.1
- 40 C
1000
0 10
1000
1.2
= 10
1
- 40 C 25 C 125 C
0.8
25 C
0.8
0.6
125 C
0.4 0.2 0 V
CE
0.6
= 1V
0.4 10
1000
1000
MPS8050
Typical Characteristics
(continued)
Ta = 25 C
1.5
0.1
0.5
Ic =
5 mA
100mA
800mA
0.01
0.001 25
125
37 36 35 34 33 32 0.1
Cob
10
100
1000
0.1 0.1
10
100
RESISTANCE (k )
V ce - COLLECTOR VOLTAGE(V)
Vce = 10V
800
TO-92
600
400
200
0 1 10 20 50 100
This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.