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AC AC performance performance of of nano nano - - electronics electronics PeterPeter J.J. BurkeBurke

ACAC performanceperformance ofof nanonano--electronicselectronics

PeterPeter J.J. BurkeBurke

DepartmentDepartment ofof ElectricalElectrical EngineeringEngineering andand ComputerComputer ScienceScience UniversityUniversity ofof California,California, IrvineIrvine

ofof California,California, IrvineIrvine Students: Zhen Yu Shengdong Li Chris Rutherglen Funding:

Students:

Zhen Yu Shengdong Li Chris Rutherglen

Funding: ARO, ONR, NSF, DARPA

ofof California,California, IrvineIrvine Students: Zhen Yu Shengdong Li Chris Rutherglen Funding: ARO, ONR, NSF, DARPA
ofof California,California, IrvineIrvine Students: Zhen Yu Shengdong Li Chris Rutherglen Funding: ARO, ONR, NSF, DARPA
ofof California,California, IrvineIrvine Students: Zhen Yu Shengdong Li Chris Rutherglen Funding: ARO, ONR, NSF, DARPA
ofof California,California, IrvineIrvine Students: Zhen Yu Shengdong Li Chris Rutherglen Funding: ARO, ONR, NSF, DARPA
ofof California,California, IrvineIrvine Students: Zhen Yu Shengdong Li Chris Rutherglen Funding: ARO, ONR, NSF, DARPA
Outline Outline MotivationMotivation TheoryTheory ofof nanotubes/nanowiresnanotubes/nanowires SynthesisSynthesis
Outline Outline MotivationMotivation TheoryTheory ofof nanotubes/nanowiresnanotubes/nanowires SynthesisSynthesis
Outline Outline MotivationMotivation TheoryTheory ofof nanotubes/nanowiresnanotubes/nanowires SynthesisSynthesis
Outline Outline MotivationMotivation TheoryTheory ofof nanotubes/nanowiresnanotubes/nanowires SynthesisSynthesis

OutlineOutline

MotivationMotivation TheoryTheory ofof nanotubes/nanowiresnanotubes/nanowires SynthesisSynthesis ACAC performanceperformance TowardsTowards integratedintegrated nanosystemsnanosystems

TowardsTowards integratedintegrated nanosystemsnanosystems “AC performance of nano-electronics” EEEE
TowardsTowards integratedintegrated nanosystemsnanosystems “AC performance of nano-electronics” EEEE

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

22

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 22
Motivation Motivation “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD
Motivation Motivation “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD
Motivation Motivation “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD
Motivation Motivation “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD
Motivation Motivation “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD
Motivation Motivation “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD
Motivation Motivation “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD
Motivation Motivation “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD

MotivationMotivation

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 33
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 33
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 33
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 33
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 33
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 33

33

Moore’s Moore’s law: law: “Top “Top down” down” approach approach “AC performance of nano-electronics”
Moore’s Moore’s law: law: “Top “Top down” down” approach approach “AC performance of nano-electronics”
Moore’s Moore’s law: law: “Top “Top down” down” approach approach “AC performance of nano-electronics”
Moore’s Moore’s law: law: “Top “Top down” down” approach approach “AC performance of nano-electronics”

Moore’sMoore’s law:law:

“Top“Top down”down” approachapproach

law: law: “Top “Top down” down” approach approach “AC performance of nano-electronics” UCSDUCSD EEEE
law: law: “Top “Top down” down” approach approach “AC performance of nano-electronics” UCSDUCSD EEEE
“AC performance of nano-electronics”
“AC performance of nano-electronics”

UCSDUCSD

EEEE DepartmentDepartment SeminarSeminar

OctoberOctober 20,20, 20042004

From Gordon Moore 2003 ISSC conference talk

PeterPeter J.J. BurkeBurke

44

Length Length scales scales Nanotube Smallest 2003 lithographic Si transistor resolution: (0.13 µm) Atom

LengthLength scalesscales

Nanotube Smallest 2003 lithographic Si transistor resolution: (0.13 µm) Atom Electron beam lithography (10 nm)
Nanotube
Smallest
2003
lithographic
Si transistor
resolution:
(0.13 µm)
Atom
Electron beam
lithography (10 nm)
DNA
Protein
Virus

1970

Si transistor

(10 µm)
(10 µm)

Cell

nm) DNA Protein Virus 1970 Si transistor (10 µm) Cell Top down Bottom up 1 A
nm) DNA Protein Virus 1970 Si transistor (10 µm) Cell Top down Bottom up 1 A
Top down Bottom up
Top down
Bottom up
Virus 1970 Si transistor (10 µm) Cell Top down Bottom up 1 A 1 nm 10
1 A 1 nm 10 nm 100 nm 1 µm 10 µm
1 A
1 nm
10 nm
100 nm
1 µm
10 µm

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

55

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 55
Highest Highest resolution resolution lithography: lithography: Expensive “AC performance of nano-electronics” EEEE

HighestHighest resolutionresolution lithography:lithography:

Highest resolution resolution lithography: lithography: Expensive “AC performance of nano-electronics” EEEE
Highest resolution resolution lithography: lithography: Expensive “AC performance of nano-electronics” EEEE
Highest resolution resolution lithography: lithography: Expensive “AC performance of nano-electronics” EEEE
Highest resolution resolution lithography: lithography: Expensive “AC performance of nano-electronics” EEEE

Expensive

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

66

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 66
Theory Theory of of nanotubes/nanowires nanotubes/nanowires “AC performance of nano-electronics” EEEE
Theory Theory of of nanotubes/nanowires nanotubes/nanowires “AC performance of nano-electronics” EEEE
Theory Theory of of nanotubes/nanowires nanotubes/nanowires “AC performance of nano-electronics” EEEE
Theory Theory of of nanotubes/nanowires nanotubes/nanowires “AC performance of nano-electronics” EEEE

TheoryTheory ofof nanotubes/nanowiresnanotubes/nanowires

Theory Theory of of nanotubes/nanowires nanotubes/nanowires “AC performance of nano-electronics” EEEE
Theory Theory of of nanotubes/nanowires nanotubes/nanowires “AC performance of nano-electronics” EEEE

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

77

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 77
Theory Theory of of carbon carbon nanotubes nanotubes R = ?

TheoryTheory ofof carboncarbon nanotubesnanotubes

Theory Theory of of carbon carbon nanotubes nanotubes R = ?

R = ?

Theory Theory of of carbon carbon nanotubes nanotubes R = ?
Theory Theory of of carbon carbon nanotubes nanotubes R = ?
Theory Theory of of carbon carbon nanotubes nanotubes R = ?
Theory Theory of of carbon carbon nanotubes nanotubes R = ?
What What is is 1d? 1d? 2 2 options options Geometry:Geometry: LengthLength >>>> WidthWidth

WhatWhat isis 1d?1d?

22 optionsoptions

What What is is 1d? 1d? 2 2 options options Geometry:Geometry: LengthLength >>>> WidthWidth
What What is is 1d? 1d? 2 2 options options Geometry:Geometry: LengthLength >>>> WidthWidth

Geometry:Geometry:

LengthLength >>>> WidthWidth

QuantumQuantum mechanics:mechanics:

WidthWidth ~~ λλ dede BroglieBroglie

h W i d t h ~ ~ λ λ dede BroglieBroglie d ~ λ Fermi
h W i d t h ~ ~ λ λ dede BroglieBroglie d ~ λ Fermi
h W i d t h ~ ~ λ λ dede BroglieBroglie d ~ λ Fermi

d ~ λ Fermi

In semiconductors, λ Fermi ~ 1-10 nm

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

In metals, λ Fermi ~ 0.1 nm

99

UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke In metals, λ F e r m i ~
Ballistic Ballistic vs. vs. diffusive diffusive transport transport Diffusive L R = ρ 2 W

BallisticBallistic vs.vs. diffusivediffusive transporttransport

Diffusive L R = ρ 2 W
Diffusive
L
R =
ρ
2
W

L

W

transport transport Diffusive L R = ρ 2 W L W l h Single mode Multi

l

transport transport Diffusive L R = ρ 2 W L W l h Single mode Multi
transport transport Diffusive L R = ρ 2 W L W l h Single mode Multi
transport transport Diffusive L R = ρ 2 W L W l h Single mode Multi
h Single mode Multi mode R ≥ =Ω 12 k 2 2 e Ballistic 1
h
Single mode
Multi mode
R
=Ω
12
k
2
2
e
Ballistic
1
h
1
R
=Ω
12
k
2
N
2
e
N
W

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

l

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke l 1010

1010

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke l 1010
Landauer Landauer formula: formula: G = n 2 e 2 h If the leads are
Landauer Landauer formula: formula: G = n 2 e 2 h If the leads are

LandauerLandauer formula:formula:

G =

n

2e

2

h

Landauer Landauer formula: formula: G = n 2 e 2 h If the leads are not
Landauer Landauer formula: formula: G = n 2 e 2 h If the leads are not
Landauer Landauer formula: formula: G = n 2 e 2 h If the leads are not

If the leads are not perfect injectors into each “channel” then:

are not perfect injectors into each “channel” then: G 2 e h 2 = ∑ T
are not perfect injectors into each “channel” then: G 2 e h 2 = ∑ T

G

2 e

h

2

=

T

n

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

1111

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 1111

ResistanceResistance quantumquantum

Ballistic conductor

Resistance Resistance quantum quantum Ballistic conductor e e I = ∫ dE I = ∫ dE
e e I = ∫ dE I = ∫ dE right goers Left right goers
e
e
I
=
dE
I
=
dE
right goers
Left
right goers
Right
h
h
contact
contact
e
I
=
dE
dE
 
right goers
left goers
 
h
2
e
e
I
=
[
(
E
+−=
eV
)
E
]
V
F
F
h
h
E
h
V
=
I
=
IR
2
quantum
e
eV
h
R
==
25
k
quantum
2
e
With spin:
h
k
x =2n x π/L x
R
==
12.5
k
quantum
2
2
e

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

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OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

1212

Fermi energy

DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 1212 Fermi energy

QuantumQuantum pointpoint contactcontact

Quantum Quantum point point contact contact B.J. van Wees et al. (1988), Phys. Rev. Lett., 60
Quantum Quantum point point contact contact B.J. van Wees et al. (1988), Phys. Rev. Lett., 60
Quantum Quantum point point contact contact B.J. van Wees et al. (1988), Phys. Rev. Lett., 60

B.J. van Wees et al. (1988), Phys. Rev. Lett., 60, 848.

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

1313

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 1313
Graphite: Graphite: 2d 2d semiconductor semiconductor Bond length = 0.142 nm “AC performance of nano-electronics”
Graphite: Graphite: 2d 2d semiconductor semiconductor Bond length = 0.142 nm “AC performance of nano-electronics”
Graphite: Graphite: 2d 2d semiconductor semiconductor Bond length = 0.142 nm “AC performance of nano-electronics”
Graphite: Graphite: 2d 2d semiconductor semiconductor Bond length = 0.142 nm “AC performance of nano-electronics”
Graphite: Graphite: 2d 2d semiconductor semiconductor Bond length = 0.142 nm “AC performance of nano-electronics”

Graphite:Graphite: 2d2d semiconductorsemiconductor

Graphite: Graphite: 2d 2d semiconductor semiconductor Bond length = 0.142 nm “AC performance of nano-electronics”

Bond length = 0.142 nm

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

1414

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 1414
Graphite Graphite band band structure structure k y E “AC performance of nano-electronics” EEEE
Graphite Graphite band band structure structure k y E “AC performance of nano-electronics” EEEE
Graphite Graphite band band structure structure k y E “AC performance of nano-electronics” EEEE
Graphite Graphite band band structure structure k y E “AC performance of nano-electronics” EEEE

GraphiteGraphite bandband structurestructure

k y

E
E

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

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OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

k x

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke k x 1515
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke k x 1515
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke k x 1515

1515

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke k x 1515

x

Nanotube:Nanotube: ZigZig--zagzag vs.vs. armchairarmchair

y

Nanotube: Zig Zig - - zag zag vs. vs. armchair armchair y Armchair Zig-zag In between:
Nanotube: Zig Zig - - zag zag vs. vs. armchair armchair y Armchair Zig-zag In between:
Nanotube: Zig Zig - - zag zag vs. vs. armchair armchair y Armchair Zig-zag In between:
Nanotube: Zig Zig - - zag zag vs. vs. armchair armchair y Armchair Zig-zag In between:

Armchair

Zig Zig - - zag zag vs. vs. armchair armchair y Armchair Zig-zag In between: Chiral

Zig-zag

In between:

Chiral

vs. armchair armchair y Armchair Zig-zag In between: Chiral “AC performance of nano-electronics” EEEE
vs. armchair armchair y Armchair Zig-zag In between: Chiral “AC performance of nano-electronics” EEEE
vs. armchair armchair y Armchair Zig-zag In between: Chiral “AC performance of nano-electronics” EEEE

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

OctoberOctober 20,20, 20042004

UCSDUCSD

PeterPeter J.J. BurkeBurke

1616

x

y Nanotube:Nanotube: ((n,mn,m)) descriptiondescription

Nanotube: ( ( n,m n,m ) ) description description a 2 a 1 6 a 1

a

2

a

1

6 a 1 + 2 a 2

n,m ) ) description description a 2 a 1 6 a 1 + 2 a 2
n,m ) ) description description a 2 a 1 6 a 1 + 2 a 2

In this example:

(n,m) = (6,2)

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

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OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 1717
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 1717

1717

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 1717
Graphite:Graphite: k k - - vector vector •• ArbitratraryArbitratrary kk x x ,, kk y

Graphite:Graphite:

kk--vectorvector

•• ArbitratraryArbitratrary kk xx ,, kk yy allowedallowed

Nanotube:Nanotube:

ψ(φψ(φ)=ψ(φ+2π))=ψ(φ+2π)

•• kk perpperp spacedspaced byby 2/d2/d

kk p e r p p e r p spacedspaced byby 2/d2/d “AC performance of nano-electronics”
kk p e r p p e r p spacedspaced byby 2/d2/d “AC performance of nano-electronics”

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 1818
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 1818
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 1818
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 1818
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 1818
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 1818

1818

k x

k y

NT axis

k x k y NT axis Allowed Allowed k k - - vectors: vectors: 2/d “AC
k x k y NT axis Allowed Allowed k k - - vectors: vectors: 2/d “AC

AllowedAllowed kk--vectors:vectors:

2/d

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 1919
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 1919
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 1919

1919

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 1919
k k - - space space k x “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar
k k - - space space k x “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar
k k - - space space k x “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar
k k - - space space k x “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar
k k - - space space k x “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar
k k - - space space k x “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

kk--spacespace

k x
k x

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

k y

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke k y 2020
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke k y 2020
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke k y 2020
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke k y 2020
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke k y 2020

2020

(9,0) (9,0) armchair armchair nanotube nanotube k x k y 2/d G 2 2 e
(9,0) (9,0) armchair armchair nanotube nanotube k x k y 2/d G 2 2 e

(9,0)(9,0) armchairarmchair nanotubenanotube

(9,0) (9,0) armchair armchair nanotube nanotube k x k y 2/d G 2 2 e 4
k x k y 2/d
k x
k y
2/d

G

2

2

e

4

2

e

h

h

=

T

n

=

NT axis

2 e 4 2 e h h = ∑ T n = NT axis All armchairs
2 e 4 2 e h h = ∑ T n = NT axis All armchairs

All armchairs are metallic.

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

OctoberOctober 20,20, 20042004

UCSDUCSD

PeterPeter J.J. BurkeBurke

EEEE DepartmentDepartment SeminarSeminar OctoberOctober 20,20, 20042004 UCSDUCSD PeterPeter J.J. BurkeBurke 2121
EEEE DepartmentDepartment SeminarSeminar OctoberOctober 20,20, 20042004 UCSDUCSD PeterPeter J.J. BurkeBurke 2121
EEEE DepartmentDepartment SeminarSeminar OctoberOctober 20,20, 20042004 UCSDUCSD PeterPeter J.J. BurkeBurke 2121

2121

EEEE DepartmentDepartment SeminarSeminar OctoberOctober 20,20, 20042004 UCSDUCSD PeterPeter J.J. BurkeBurke 2121
Semiconducting Semiconducting nanotube nanotube k x NT axis k y UCSDUCSD 2/d bandgap = 1
Semiconducting Semiconducting nanotube nanotube k x NT axis k y UCSDUCSD 2/d bandgap = 1

SemiconductingSemiconducting nanotubenanotube

k x

NT axis

k y

Semiconducting nanotube nanotube k x NT axis k y UCSDUCSD 2/d bandgap = 1 eV d
Semiconducting nanotube nanotube k x NT axis k y UCSDUCSD 2/d bandgap = 1 eV d

UCSDUCSD

2/d

bandgap =

1 eV

d nm

[

]

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

axis k y UCSDUCSD 2/d bandgap = 1 eV d nm [ ] OctoberOctober 20,20, 20042004
axis k y UCSDUCSD 2/d bandgap = 1 eV d nm [ ] OctoberOctober 20,20, 20042004

2222

axis k y UCSDUCSD 2/d bandgap = 1 eV d nm [ ] OctoberOctober 20,20, 20042004
Electrical Electrical properties properties AllAll armchairarmchair metallicmetallic 33%33% ofof zigzig --zagzag

ElectricalElectrical propertiesproperties

AllAll armchairarmchair metallicmetallic 33%33% ofof zigzig--zagzag metallicmetallic SemiconductingSemiconducting tubes:tubes:

•• GapGap == 0.90.9 eV/d[nmeV/d[nm]]

tubes:tubes: •• GapGap == 0.90.9 eV/d[nmeV/d[nm]] Statistically,Statistically, 9/109/10 metallicmetallic “AC
tubes:tubes: •• GapGap == 0.90.9 eV/d[nmeV/d[nm]] Statistically,Statistically, 9/109/10 metallicmetallic “AC
tubes:tubes: •• GapGap == 0.90.9 eV/d[nmeV/d[nm]] Statistically,Statistically, 9/109/10 metallicmetallic “AC

Statistically,Statistically, 9/109/10 metallicmetallic

Statistically,Statistically, 9/109/10 metallicmetallic “AC performance of nano-electronics” EEEE
Statistically,Statistically, 9/109/10 metallicmetallic “AC performance of nano-electronics” EEEE

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

2323

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 2323
AC AC nanosystems? nanosystems? RR q u a n t u m q u a
AC AC nanosystems? nanosystems? RR q u a n t u m q u a
AC AC nanosystems? nanosystems? RR q u a n t u m q u a
AC AC nanosystems? nanosystems? RR q u a n t u m q u a

ACAC nanosystems?nanosystems?

AC AC nanosystems? nanosystems? RR q u a n t u m q u a n

RR quantumquantum == h/eh/e 22 == 2525 kkΩΩ

q u a n t u m == h/eh/e 2 2 == 2525 kk ΩΩ Z
q u a n t u m == h/eh/e 2 2 == 2525 kk ΩΩ Z
q u a n t u m == h/eh/e 2 2 == 2525 kk ΩΩ Z
q u a n t u m == h/eh/e 2 2 == 2525 kk ΩΩ Z

ZZ quantumquantum ((ωω)=)= ??

InductorInductor

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

2424

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 2424

ScalingScaling downdown toto nanonano

Scaling Scaling down down to to nano nano QuantityQuantity ExponentExponent TypicalTypical magnitudemagnitude
Scaling Scaling down down to to nano nano QuantityQuantity ExponentExponent TypicalTypical magnitudemagnitude

QuantityQuantity

ExponentExponent

TypicalTypical magnitudemagnitude

GoodGood

ModerateModerate

PoorPoor

BadBad

AreaArea

22

10e10e--1818 m^2m^2

       

ForceForce

22

10e10e--88 N/m^2N/m^2

       

StiffnessStiffness

11

10001000 N/mN/m

       

DeformationDeformation

11

10e10e--1111 mm

       

MassMass

33

10e10e--2424 kgkg

       

AccelerationAcceleration

--11

10e1510e15 m/s^2m/s^2

       

VibrationalVibrational FrequencyFrequency

--11

10e1310e13 rad/srad/s

       

StressStress--limitedlimited speedspeed

00

10e310e3 m/sm/s

       

MotionMotion timetime

--11

10e10e--1212 toto 10^10^--99 ss

       

PowerPower

22

10e10e--88 WW

       

PowerPower densitydensity

--11

10e1910e19 W/m^3W/m^3

       

ViscousViscous stressstress

--11

10e610e6 N/m^2N/m^2

       

FrictionalFrictional forceforce

22

         

WearWear lifelife

11

         

ThermalThermal speedspeed

--3/23/2

100100 m/sm/s

       

VoltageVoltage

11

11 VV

       

ElectrostaticElectrostatic forceforce

22

10e10e--1212 NN

       

ResistanceResistance

--11

1010 ohmohm

       

CurrentCurrent

22

10e10e--88 AA

       

ElectrostaticElectrostatic energyenergy

33

10e10e--2121 JJ

       

CapacitanceCapacitance

11

10e10e--2020 FF

       

MagneticMagnetic fieldfield

11

10e10e--66 TT

       

MagneticMagnetic forceforce

44

10e10e--2323 NN

       

InductanceInductance

11

10e10e--1515 HH

       

InductiveInductive timetime constantconstant

22

<10e<10e--1616 ss

       

CapacitiveCapacitive timetime constantconstant

00

         

Elect.Elect. oscilloscill frequencyfrequency

--11

>10e18>10e18 rad/srad/s

       

OscillatorOscillator QQ

11

         

HeatHeat capacitycapacity

33

10e10e--2121 J/KJ/K

       

ThermalThermal conductanceconductance

11

10e10e--88 W/KW/K

       

ThermalThermal timetime constantconstant

22

10e10e--1313 ss

       

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

adapted from:

Nanosystems: Molecular Machinery Manufacturing, and Computation K. Eric Drexler Wiley, 1992

“Different classical models fail at different length scales, with the most dramatic failures appearing in AC electrical circuits.”

models fail at different length scales, with the most dramatic failures appearing in AC electrical circuits.”

2525

1 1 channel channel spinless spinless electrons electrons Geometry Geometry d h RF RF circuit
1 1 channel channel spinless spinless electrons electrons Geometry Geometry d h RF RF circuit
1 1 channel channel spinless spinless electrons electrons Geometry Geometry d h RF RF circuit

11 channelchannel spinlessspinless electronselectrons

GeometryGeometry

d h
d
h

RFRF circuitcircuit model:model:

AA transmissiontransmission lineline

model: model: A A transmission transmission line line L kinetic L magnetic C quantum C electrostatic
model: model: A A transmission transmission line line L kinetic L magnetic C quantum C electrostatic
L kinetic L magnetic C quantum C electrostatic
L kinetic
L magnetic
C
quantum
C
electrostatic

“An RF Circuit Model for Carbon Nanotubes”, P.J. Burke IEEE Transactions on Nanotechnology 2(1), 55-58 (2003) “Luttinger Liquid Theory as a Model of the GHz Electrical Properties of Carbon Nanotubes”, P.J. Burke, IEEE Transactions on Nanotechnology 1(3), 129-144 (2002)

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

2626

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 2626
Quantum Quantum impedances: impedances: KineticKinetic inductanceinductance == 1616 nH/nH/ µµ mm QuantumQuantum

QuantumQuantum impedances:impedances:

Quantum Quantum impedances: impedances: KineticKinetic inductanceinductance == 1616 nH/nH/ µµ mm QuantumQuantum
Quantum Quantum impedances: impedances: KineticKinetic inductanceinductance == 1616 nH/nH/ µµ mm QuantumQuantum

KineticKinetic inductanceinductance == 1616 nH/nH/µµmm QuantumQuantum capacitancecapacitance == 100100 aF/aF/µµmm ElectrostaticElectrostatic capacitancecapacitance == 5050 aF/aF/µµmm

IfIf wewe neglectneglect electrostaticelectrostatic capacitance:capacitance:

electrostaticelectrostatic capacitance:capacitance: CharacteristicCharacteristic impedanceimpedance ==

CharacteristicCharacteristic impedanceimpedance == Sqrt(L/C)Sqrt(L/C) == h/2eh/2e 22 == 12.512.5 kkΩΩ

UCSDUCSD

WaveWave velocityvelocity == Sqrt(1/LC)Sqrt(1/LC) == vv FermiFermi == 88 1010 55 m/sm/s

~c/100~c/100

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

2727

EEEE DepartmentDepartment SeminarSeminar OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 2727
Carbon Carbon nanotube nanotube RF RF circuit circuit without without e e - - e
Carbon Carbon nanotube nanotube RF RF circuit circuit without without e e - - e
Carbon Carbon nanotube nanotube RF RF circuit circuit without without e e - - e

CarbonCarbon nanotubenanotube RFRF circuitcircuit withoutwithout ee--ee interactions:interactions:

FourFour channelschannels inin parallel:parallel:

•• x2x2 forfor spinspin •• x2x2 fromfrom bandband structurestructure

NeglectNeglect ee--ee interactioninteraction

L kinetic C quantum
L kinetic
C
quantum

L kinetic

spinspin upup aa

spinspin downdown aa

C
C

quantum

L kinetic C quantum
L kinetic
C
quantum

L kinetic

spinspin upup bb

quantum L kinetic C quantum L kinetic spinspin upup bb ⇒⇒ neglectneglect electrostaticelectrostatic
quantum L kinetic C quantum L kinetic spinspin upup bb ⇒⇒ neglectneglect electrostaticelectrostatic

⇒⇒ neglectneglect electrostaticelectrostatic capacitancecapacitance

spinspin downdown bb

C
C

quantum

capacitancecapacitance spinspin downdown bb C quantum “AC performance of nano-electronics” EEEE

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

OctoberOctober 20,20, 20042004

UCSDUCSD

PeterPeter J.J. BurkeBurke

2828

C quantum Carbon Carbon nanotube nanotube RF RF circuit circuit with with e e -
C quantum Carbon Carbon nanotube nanotube RF RF circuit circuit with with e e -
C quantum Carbon Carbon nanotube nanotube RF RF circuit circuit with with e e -

C quantum

CarbonCarbon nanotubenanotube RFRF circuitcircuit withwith ee--ee interactions:interactions:

spinspin upup aa

L kinetic

IncludeInclude ee--ee interactioninteraction

spinspin downdown aa

L kinetic

⇒⇒ electrostaticelectrostatic capacitancecapacitance

spinspin upup bb

L kinetic

C quantum

44 channelschannels coupledcoupled

Spin/chargeSpin/charge separation:separation:

spinspin downdown bb

•• CommonCommon modemode == ChargeCharge modemode •• DifferentialDifferential modesmodes (3)=(3)= SpinSpin modesmodes

L kinetic

C quantum

C quantum

C electrostatic

L kinetic C quantum C quantum C electrostatic “An RF Circuit Model for Carbon Nanotubes”, P.J.

“An RF Circuit Model for Carbon Nanotubes”, P.J. Burke IEEE Transactions on Nanotechnology 2(1), 55-58 (2003) “Luttinger Liquid Theory as a Model of the GHz Electrical Properties of Carbon Nanotubes”, P.J. Burke, IEEE Transactions on Nanotechnology 1(3), 129-144 (2002)

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

2929

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 2929
Spin Spin charge charge separation: separation: WaveWave velocityvelocity == Sqrt(1/LC)Sqrt(1/LC) spinspin upup aa

SpinSpin chargecharge separation:separation:

Spin Spin charge charge separation: separation: WaveWave velocityvelocity == Sqrt(1/LC)Sqrt(1/LC) spinspin upup aa

WaveWave velocityvelocity == Sqrt(1/LC)Sqrt(1/LC)

spinspin upup aa kinetic C spinspin downdown aa spinspin upup bb L kinetic C quantum
spinspin upup aa
kinetic
C
spinspin downdown aa
spinspin upup bb
L kinetic
C quantum
L kinetic
C quantum
L kinetic
C quantum
C
electrostatic

quantum

L

spinspin downdown bb

••ChargeCharge mode:mode:

CC --11 == CC quantumquantum --11 ++ CC electrostaticelectrostatic --11

1 + + C C electrostaticelectrostatic - - 1 1 SpinSpin mode:mode: C C = =

SpinSpin mode:mode:

CC == CC quantumquantum

⇒⇒DifferentDifferent wavewave velocitiesvelocities

“AC performance of nano-electronics”

EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

3030

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 3030
Luttinger Luttinger liquid liquid theory: theory: Landau’sLandau’s FermiFermi liquidliquid theorytheory

LuttingerLuttinger liquidliquid theory:theory:

Luttinger Luttinger liquid liquid theory: theory: Landau’sLandau’s FermiFermi liquidliquid theorytheory

Landau’sLandau’s FermiFermi liquidliquid theorytheory breaksbreaks downdown inin 1d1d

⇒⇒ NoNo singlesingle--particleparticle excitationsexcitations

LuttingerLuttinger liquidliquid

⇒⇒ TheoreticalTheoretical replacementreplacement forfor FermiFermi liquidliquid inin 1d1d

spinspin upup aa kinetic C spinspin downdown aa spinspin upup bb L kinetic C quantum
spinspin upup aa
kinetic
C
spinspin downdown aa
spinspin upup bb
L kinetic
C quantum
L kinetic
C quantum
L kinetic
C quantum
C
electrostatic

quantum

L

spinspin downdown bb

OnlyOnly excitationsexcitations areare collectivecollective modesmodes::

•• ChargeCharge waveswaves •• SpinSpin waveswaves •• CalledCalled 1d1d plasmonsplasmons

waveswaves •• CalledCalled 1d1d plasmonsplasmons UCSDUCSD V V chargecharge = = g V g V

UCSDUCSD

•• CalledCalled 1d1d plasmonsplasmons UCSDUCSD V V chargecharge = = g V g V FermiFermi V

VV chargecharge ==gVgV FermiFermi VV spinspin ==VV FermiFermi

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

3131

Damping??? Damping??? MechanismsMechanisms unknownunknown ModelModel phenomenalogicallyphenomenalogically ••
Damping??? Damping??? MechanismsMechanisms unknownunknown ModelModel phenomenalogicallyphenomenalogically ••

Damping???Damping???

MechanismsMechanisms unknownunknown ModelModel phenomenalogicallyphenomenalogically

•• ResistanceResistance perper lengthlength •• ContactContact resistanceresistance == 0.50.5 h/eh/e 22 perper endend (Buttiker(Buttiker callscalls “charge“charge relaxationrelaxation resistance”)resistance”)

relaxationrelaxation resistance”)resistance”) L kinetic L magnetic C quantum C electrostatic “AC
relaxationrelaxation resistance”)resistance”) L kinetic L magnetic C quantum C electrostatic “AC
relaxationrelaxation resistance”)resistance”) L kinetic L magnetic C quantum C electrostatic “AC
relaxationrelaxation resistance”)resistance”) L kinetic L magnetic C quantum C electrostatic “AC
relaxationrelaxation resistance”)resistance”) L kinetic L magnetic C quantum C electrostatic “AC
L kinetic L magnetic C quantum C electrostatic
L kinetic
L magnetic
C
quantum
C
electrostatic

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

3232

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 3232
Synthesis Synthesis “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD
Synthesis Synthesis “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD
Synthesis Synthesis “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD
Synthesis Synthesis “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD
Synthesis Synthesis “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD
Synthesis Synthesis “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD
Synthesis Synthesis “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD
Synthesis Synthesis “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD

SynthesisSynthesis

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 3333
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 3333
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 3333
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 3333
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 3333
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 3333

3333

Synthesis: Synthesis: The The current current paradigm paradigm feedstock gas, e.g.: CH 4 for carbon

Synthesis:Synthesis:

TheThe currentcurrent paradigmparadigm

feedstock gas, e.g.:

CH 4 for carbon nanotubes SiH 4 for Si nanowires

catalyst on a chip Oven 1000° C
catalyst on a chip
Oven 1000° C
SiH 4 for Si nanowires catalyst on a chip Oven 1000° C g a s nanoparticle
SiH 4 for Si nanowires catalyst on a chip Oven 1000° C g a s nanoparticle
SiH 4 for Si nanowires catalyst on a chip Oven 1000° C g a s nanoparticle

gas

for Si nanowires catalyst on a chip Oven 1000° C g a s nanoparticle catalyst substrate

nanoparticle catalyst

on a chip Oven 1000° C g a s nanoparticle catalyst substrate Carbon nanotube Systems are
substrate
substrate
substrate
substrate
substrate

substrate

Carbon nanotube

C g a s nanoparticle catalyst substrate Carbon nanotube Systems are commercially available now, e.g.: Nanodevices,

Systems are commercially available now, e.g.:

Nanodevices, Atomate

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

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OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

3434

Materials Materials systems systems NanotubesNanotubes •• CarbonCarbon (metallic(metallic oror

MaterialsMaterials systemssystems

NanotubesNanotubes

Materials Materials systems systems NanotubesNanotubes •• CarbonCarbon (metallic(metallic oror
Materials Materials systems systems NanotubesNanotubes •• CarbonCarbon (metallic(metallic oror

•• CarbonCarbon (metallic(metallic oror semiconducting,semiconducting, dependingdepending onon atomicatomic structure)structure) •• BB

SemiconductorSemiconductor nanowiresnanowires

•• SiSi •• IIIIII--VV •• IIII--VIVI

MetalMetal nanowiresnanowires

IIIIII--VV •• IIII--VIVI MetalMetal nanowiresnanowires “AC performance of nano-electronics” EEEE

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

3535

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 3535
Fabrication Fabrication techniques: techniques: Two Two options options DefineDefine catalystscatalysts beforebefore

FabricationFabrication techniques:techniques:

TwoTwo optionsoptions

techniques: techniques: Two Two options options DefineDefine catalystscatalysts beforebefore growthgrowth
techniques: techniques: Two Two options options DefineDefine catalystscatalysts beforebefore growthgrowth

DefineDefine catalystscatalysts beforebefore growthgrowth

•• DoneDone withwith lithographylithography •• InIn--situsitu electricalelectrical contactcontact possiblepossible •• HardHard toto getget oneone tube/catalysttube/catalyst sitesite withwith highhigh reproducibilityreproducibility •• NeedNeed moremore processingprocessing stepssteps forfor toptop--gategate

SpinSpin--onon nanotube/nanowirenanotube/nanowire afterafter growthgrowth

•• LocateLocate withwith alignmentalignment marksmarks afterafter depositiondeposition •• LithographicallyLithographically fabricatefabricate contacts/gatecontacts/gate

fabricatefabricate contacts/gatecontacts/gate “AC performance of nano-electronics” EEEE

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

3636

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 3636

CatalystCatalyst RecipeRecipe

Catalyst Catalyst Recipe Recipe Al 2 O 3 Fe(NO 3 ) 3 nanoparticles nanoparticles Mo 2

Al 2 O 3 Fe(NO 3 ) 3 nanoparticlesnanoparticles

2 O 3 Fe(NO 3 ) 3 nanoparticles nanoparticles Mo 2 (AcAc) 2 O H 2
2 O 3 Fe(NO 3 ) 3 nanoparticles nanoparticles Mo 2 (AcAc) 2 O H 2

Mo 2 (AcAc) 2

O H 2
O
H 2
3 nanoparticles nanoparticles Mo 2 (AcAc) 2 O H 2 Catalyst Pattern “AC performance of nano-electronics”

Catalyst Pattern

nanoparticles Mo 2 (AcAc) 2 O H 2 Catalyst Pattern “AC performance of nano-electronics” EEEE
nanoparticles Mo 2 (AcAc) 2 O H 2 Catalyst Pattern “AC performance of nano-electronics” EEEE
nanoparticles Mo 2 (AcAc) 2 O H 2 Catalyst Pattern “AC performance of nano-electronics” EEEE
“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar
“AC performance of nano-electronics”
EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

3737

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 3737

NanotubeNanotube growthgrowth systemsystem inin INRFINRF

Nanotube growth growth system system in in INRF INRF Gas Cylinders Lindberg Furnace Quartz Tube Catalyst
Gas Cylinders Lindberg Furnace Quartz Tube Catalyst Pattern “AC performance of nano-electronics” Mass Flow
Gas Cylinders
Lindberg Furnace
Quartz Tube
Catalyst Pattern
“AC performance of nano-electronics”
Mass Flow Controllers
EEEE DepartmentDepartment SeminarSeminar
Controlling Valves
Work of Sheldon Li
UCSDUCSD
OctoberOctober 20,20, 20042004
PeterPeter J.J. BurkeBurke
3838
“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004
“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004
“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004
“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004
“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004
“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004
“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 3939
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 3939
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 3939
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 3939
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 3939
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 3939

3939

SingleSingle WalledWalled CarbonCarbon NanotubeNanotube

Single Walled Walled Carbon Carbon Nanotube Nanotube Nanoparticles Nanoparticles Catalyst Catalyst “AC
Single Walled Walled Carbon Carbon Nanotube Nanotube Nanoparticles Nanoparticles Catalyst Catalyst “AC
Single Walled Walled Carbon Carbon Nanotube Nanotube Nanoparticles Nanoparticles Catalyst Catalyst “AC

NanoparticlesNanoparticles CatalystCatalyst

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

4040

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 4040
60 60 micron micron long long SWNT SWNT Predicted Predicted inductance inductance 200 200 nH
60 60 micron micron long long SWNT SWNT Predicted Predicted inductance inductance 200 200 nH
60 60 micron micron long long SWNT SWNT Predicted Predicted inductance inductance 200 200 nH
60 60 micron micron long long SWNT SWNT Predicted Predicted inductance inductance 200 200 nH
60 60 micron micron long long SWNT SWNT Predicted Predicted inductance inductance 200 200 nH
60 60 micron micron long long SWNT SWNT Predicted Predicted inductance inductance 200 200 nH

6060 micronmicron longlong SWNTSWNT

PredictedPredicted inductanceinductance 200200 nHnH!!

Predicted inductance inductance 200 200 nH nH ! ! “AC performance of nano-electronics” EEEE
Predicted inductance inductance 200 200 nH nH ! ! “AC performance of nano-electronics” EEEE
Predicted inductance inductance 200 200 nH nH ! ! “AC performance of nano-electronics” EEEE
Predicted inductance inductance 200 200 nH nH ! ! “AC performance of nano-electronics” EEEE

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

OctoberOctober 20,20, 20042004

Work of Sheldon Li

4141

UCSDUCSD

PeterPeter J.J. BurkeBurke

Electrically Electrically contacted contacted SWNTs SWNTs Semiconducting SWNTS Drain Source “AC performance of

ElectricallyElectrically contactedcontacted SWNTsSWNTs

Electrically Electrically contacted contacted SWNTs SWNTs Semiconducting SWNTS Drain Source “AC performance of
Electrically Electrically contacted contacted SWNTs SWNTs Semiconducting SWNTS Drain Source “AC performance of
Semiconducting SWNTS Drain Source
Semiconducting SWNTS
Drain
Source

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

Work of Sheldon Li

4242

SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke Work of Sheldon Li 4242
SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke Work of Sheldon Li 4242
Electrically Electrically contacted contacted SWNTs SWNTs Metallic “AC performance of nano-electronics” EEEE

ElectricallyElectrically contactedcontacted SWNTsSWNTs

Metallic

Electrically contacted contacted SWNTs SWNTs Metallic “AC performance of nano-electronics” EEEE
Electrically contacted contacted SWNTs SWNTs Metallic “AC performance of nano-electronics” EEEE

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

Li Burke et al Nano Letters (2004).

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

Li Burke et al Nano Letters (2004). UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 4343

4343

Li Burke et al Nano Letters (2004). UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 4343
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“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

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OctoberOctober 20,20, 20042004

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4444

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004
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“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

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4545

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004
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“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

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OctoberOctober 20,20, 20042004

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EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 4646

4646

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004
“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004
“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004
“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004
“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004
“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004
“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004
“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 4747
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 4747
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 4747
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 4747
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 4747
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 4747

4747

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004
“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004
“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004
“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004
“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004
“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004
“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004
“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 4848
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 4848
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 4848
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 4848
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 4848
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 4848

4848

Z. Yu, S.Li, C. Rutherglen, P Burke, Chemistry of Materials , (2004). “AC performance of
Z. Yu, S.Li, C. Rutherglen, P Burke, Chemistry of Materials , (2004). “AC performance of
Z. Yu, S.Li, C. Rutherglen, P Burke, Chemistry of Materials , (2004). “AC performance of
Z. Yu, S.Li, C. Rutherglen, P Burke, Chemistry of Materials , (2004). “AC performance of
Z. Yu, S.Li, C. Rutherglen, P Burke, Chemistry of Materials , (2004). “AC performance of
Z. Yu, S.Li, C. Rutherglen, P Burke, Chemistry of Materials , (2004). “AC performance of

Z. Yu, S.Li, C. Rutherglen, P Burke, Chemistry of Materials, (2004).

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

4949

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 4949
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 4949
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 4949
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 4949
Growth starts on this catalyst pad. ~ 1.5 mm Growth terminates at this catalyst pad.
Growth starts on this catalyst pad.
Growth starts on this catalyst pad.
Growth starts on this catalyst pad. ~ 1.5 mm Growth terminates at this catalyst pad. “AC
Growth starts on this catalyst pad. ~ 1.5 mm Growth terminates at this catalyst pad. “AC

~ 1.5 mm

Growth terminates at this catalyst pad. “AC performance of nano-electronics” EEEE DepartmentDepartment
Growth terminates at this catalyst pad.
“AC performance of nano-electronics”
EEEE DepartmentDepartment SeminarSeminar
UCSDUCSD
OctoberOctober 20,20, 20042004
PeterPeter J.J. BurkeBurke

5050

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 5050
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 5050
cm cm scale scale SWNTs SWNTs Catalylst pads Catalyst pads SWNTs 0.5 cm “AC performance

cmcm scalescale SWNTsSWNTs

cm cm scale scale SWNTs SWNTs Catalylst pads Catalyst pads SWNTs 0.5 cm “AC performance of

Catalylst pads

Catalyst pads

cm cm scale scale SWNTs SWNTs Catalylst pads Catalyst pads SWNTs 0.5 cm “AC performance of

SWNTs

scale scale SWNTs SWNTs Catalylst pads Catalyst pads SWNTs 0.5 cm “AC performance of nano-electronics” S.
0.5 cm “AC performance of nano-electronics” S. Li, Z. Yu, C. Rutherglen, P Burke, Nano
0.5 cm
“AC performance of nano-electronics”
S. Li, Z. Yu, C. Rutherglen, P Burke, Nano Letters, (2004).
EEEE DepartmentDepartment SeminarSeminar
UCSDUCSD
OctoberOctober 20,20, 20042004
PeterPeter J.J. BurkeBurke
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 5151
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 5151
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 5151
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 5151

5151

Tube “B”

Tube “A” (L = 0.65 mm)

Tube “B” Tube “A” (L = 0.65 mm) nanoparticles, d~2 nm freely suspended regions nanotube Cr/Au
Tube “B” Tube “A” (L = 0.65 mm) nanoparticles, d~2 nm freely suspended regions nanotube Cr/Au
Tube “B” Tube “A” (L = 0.65 mm) nanoparticles, d~2 nm freely suspended regions nanotube Cr/Au

nanoparticles, d~2 nm

freely suspended regions nanotube Cr/Au substrate
freely suspended regions
nanotube
Cr/Au
substrate

Z. Yu, S.Li, C. Rutherglen, P Burke, Chemistry of Materials, (2004).

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

5252

Multi Multi - - walled walled nanotube nanotube (MWNT) (MWNT) “AC performance of nano-electronics” EEEE

MultiMulti--walledwalled nanotubenanotube (MWNT)(MWNT)

Multi - - walled walled nanotube nanotube (MWNT) (MWNT) “AC performance of nano-electronics” EEEE
Multi - - walled walled nanotube nanotube (MWNT) (MWNT) “AC performance of nano-electronics” EEEE

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke Shengdong Li 5353

Shengdong Li

5353

Devices Devices “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober
Devices Devices “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober
Devices Devices “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober
Devices Devices “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober
Devices Devices “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober
Devices Devices “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober
Devices Devices “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober
Devices Devices “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober

DevicesDevices

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 5454
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 5454
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 5454
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 5454
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 5454
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 5454

5454

Typical Typical geometry geometry L source drain oxide gate (back)
Typical Typical geometry geometry L source drain oxide gate (back)
Typical Typical geometry geometry L source drain oxide gate (back)
Typical Typical geometry geometry L source drain oxide gate (back)
Typical Typical geometry geometry L source drain oxide gate (back)

TypicalTypical geometrygeometry

L

Typical Typical geometry geometry L source drain oxide gate (back)

source

drain

Typical Typical geometry geometry L source drain oxide gate (back)

oxide

gate (back)

Typical Typical geometry geometry L source drain oxide gate (back)
Electrical Electrical performance performance Ids(µA) -5 Gate = + 7.7 V Gate = -5 V

ElectricalElectrical performanceperformance

Electrical Electrical performance performance Ids(µA) -5 Gate = + 7.7 V Gate = -5 V -4
Electrical Electrical performance performance Ids(µA) -5 Gate = + 7.7 V Gate = -5 V -4
Ids(µA)
Ids(µA)
-5 Gate = + 7.7 V Gate = -5 V -4 -3 -2 -1 0
-5
Gate = + 7.7 V
Gate = -5 V
-4
-3
-2
-1
0
0
-1
-2
-3
-4

Vds (V)

V Gate = -5 V -4 -3 -2 -1 0 0 -1 -2 -3 -4 Vds
V Gate = -5 V -4 -3 -2 -1 0 0 -1 -2 -3 -4 Vds

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

OctoberOctober 20,20, 20042004

UCSDUCSD

PeterPeter J.J. BurkeBurke

5656

EEEE DepartmentDepartment SeminarSeminar OctoberOctober 20,20, 20042004 UCSDUCSD PeterPeter J.J. BurkeBurke 5656
Ballistic wires: Operating Operating principles: principles: Diffusive wires: Schottky barrier modulation Appropriate

Ballistic wires:

OperatingOperating principles:principles:

Diffusive wires:

Operating principles: principles: Diffusive wires: Schottky barrier modulation Appropriate for short carbon
Operating principles: principles: Diffusive wires: Schottky barrier modulation Appropriate for short carbon
Operating principles: principles: Diffusive wires: Schottky barrier modulation Appropriate for short carbon

Schottky barrier modulation Appropriate for short carbon nanotubes

Charge density modulation Appropriate for long carbon nanotubes, semiconducting nanowires?

for long carbon nanotubes, semiconducting nanowires? Many details still not known: •Electrostatics •Quantum

Many details still not known:

•Electrostatics •Quantum 1d effects •Finite frequency

•Quantum 1d effects •Finite frequency Javey, Guo, Wang, Lundstrom, Dai, “Ballistic Carbon

Javey, Guo, Wang, Lundstrom, Dai, “Ballistic Carbon Nanotube Field-Effect Transistors”, Nature, 424, 2003.

UCSDUCSD

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

5757

DepletionDepletion CurveCurve ofof aa SemiconductingSemiconducting CNTCNT T = 300 K T = 4 K 300
DepletionDepletion CurveCurve ofof aa SemiconductingSemiconducting CNTCNT T = 300 K T = 4 K 300
DepletionDepletion CurveCurve ofof aa SemiconductingSemiconducting CNTCNT T = 300 K T = 4 K 300
DepletionDepletion CurveCurve ofof aa SemiconductingSemiconducting CNTCNT T = 300 K T = 4 K 300

DepletionDepletion CurveCurve ofof aa SemiconductingSemiconducting CNTCNT

T = 300 K

T = 4 K 300 2 250 0 -2 -10 0 10 200 Voltage (mV)
T = 4 K
300
2
250
0
-2
-10
0
10
200
Voltage (mV)
150
100
50
0
0.0
0.2
0.4
0.6
0.8
1.0
Back gate voltage (V)
G (nS)
Current (nA)

Work of Sheldon Li

5858

5 4 3 2 1 0 -8 -6 -4 -2 0 2 4 6 8
5
4
3
2
1
0
-8
-6
-4
-2
0
2
4
6
8
Conductance (µS)

Gate Voltage (V)

-2 0 2 4 6 8 Conductance (µS) Gate Voltage (V) “AC performance of nano-electronics” EEEE
-2 0 2 4 6 8 Conductance (µS) Gate Voltage (V) “AC performance of nano-electronics” EEEE

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

OctoberOctober 20,20, 20042004

UCSDUCSD

PeterPeter J.J. BurkeBurke

DepletionDepletion CurveCurve ofof aa MetallicMetallic CNTCNT T = 4 K 4 3 2 1 0
DepletionDepletion CurveCurve ofof aa MetallicMetallic CNTCNT T = 4 K 4 3 2 1 0

DepletionDepletion CurveCurve ofof aa MetallicMetallic CNTCNT

T = 4 K

CurveCurve ofof aa MetallicMetallic CNTCNT T = 4 K 4 3 2 1 0 -6 -4
CurveCurve ofof aa MetallicMetallic CNTCNT T = 4 K 4 3 2 1 0 -6 -4
CurveCurve ofof aa MetallicMetallic CNTCNT T = 4 K 4 3 2 1 0 -6 -4
CurveCurve ofof aa MetallicMetallic CNTCNT T = 4 K 4 3 2 1 0 -6 -4
4 3 2 1 0 -6 -4 -2 0 2 G (µS) Current (nA)
4
3
2
1
0
-6
-4
-2
0
2
G (µS)
Current (nA)

Back gate voltage (V)

50 0 -50 -10 0 10
50
0
-50
-10
0
10

Voltage (mV)

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

Work of Sheldon Li

5959

SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke Work of Sheldon Li 5959
Typical Typical geometry geometry L gate (top) insulator source drain oxide gate (back) DC performance
Typical Typical geometry geometry L gate (top) insulator source drain oxide gate (back) DC performance
Typical Typical geometry geometry L gate (top) insulator source drain oxide gate (back) DC performance
Typical Typical geometry geometry L gate (top) insulator source drain oxide gate (back) DC performance

TypicalTypical geometrygeometry

L

Typical Typical geometry geometry L gate (top) insulator source drain oxide gate (back) DC performance demonstrated

gate (top)

insulator

source

drain

geometry geometry L gate (top) insulator source drain oxide gate (back) DC performance demonstrated in: S.J.

oxide

gate (back)

L gate (top) insulator source drain oxide gate (back) DC performance demonstrated in: S.J. Wind, J.

DC performance demonstrated in:

S.J. Wind, J. Appenzeller, R. Martel, V. Derycke, Ph. Avouris, “Vertical Scaling of Carbon Nanotube Field-Effect Transistors Using Top Gate Electrodes”, Applied Physics Letters, 80(20), 3817-3819 (2002).

A. Javey, H. Kim, M. Brink, Q. Wang, A. Ural, J. Guo, P. Mcintyre, P. McEuen, M. Lundstrom, H. Dai, “High-K dielectrics for advanced carbon-nanotube transistors and logic gates”, Nature Materials, 1, p. 241-246, (2002).

Top Top gated gated device device T= 4 K S.Li, Z. Yu, P Burke, Journal
Top Top gated gated device device T= 4 K S.Li, Z. Yu, P Burke, Journal
Top Top gated gated device device T= 4 K S.Li, Z. Yu, P Burke, Journal

TopTop gatedgated devicedevice

T= 4 K
T= 4 K

S.Li, Z. Yu, P Burke, Journal of Vacuum Science and Technology B: Nanotechnology (in press, 2004).

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

6161

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 6161
Geometry Geometry variations variations gate (top) insulator source drain oxide gate (back) Source Nanowire Drain
Geometry Geometry variations variations gate (top) insulator source drain oxide gate (back) Source Nanowire Drain
Geometry Geometry variations variations gate (top) insulator source drain oxide gate (back) Source Nanowire Drain

GeometryGeometry variationsvariations

gate (top)

insulator

source drain oxide gate (back)
source
drain
oxide
gate (back)
Source Nanowire Drain gate ins source drain G1 G2 G3 oxide gate (back) Nanowire Nanowire
Source
Nanowire
Drain
gate
ins
source
drain
G1
G2
G3
oxide
gate (back)
Nanowire
Nanowire
Nanowie
G1 G2 G3 oxide gate (back) Nanowire Nanowire Nanowie gate gate ins ins source drain oxide
gate gate ins ins source drain oxide gate (back)
gate
gate
ins
ins
source
drain
oxide
gate (back)

Radial and longitudinal band gap engineering recently demonstrated.

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

6262

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 6262
Work Work still still needed needed on: on: Electrostatics Quantum 1d effects Finite frequencies Electrostatics

WorkWork stillstill neededneeded on:on:

Electrostatics Quantum 1d effects Finite frequencies

Electrostatics Quantum 1d effects Finite frequencies Electrostatics example: p-n junction Traditional N a n o
Electrostatics Quantum 1d effects Finite frequencies Electrostatics example: p-n junction Traditional N a n o
Electrostatics Quantum 1d effects Finite frequencies Electrostatics example: p-n junction Traditional N a n o

Electrostatics example: p-n junction

Finite frequencies Electrostatics example: p-n junction Traditional N a n o p - n   -

Traditional

Nano p-n

 

-

   

+

-

+

-

+

p type

-

n type

+

 

-

 

+

-

+

UCSDUCSD

n type +   -   + - + UCSDUCSD p type - + n type

p type

-

+

n type

  + - + UCSDUCSD p type - + n type Fringe field lines extend way

Fringe field lines extend way out.

See, e.g, Leonard, Tersoff, “Novel Length Scales in Nanotube Devices”, Physical Review Letters, 83 (1999).

Nanotube Devices”, Physical Review Letters , 83 (1999). “AC performance of nano-electronics” EEEE

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

6363

Advantages Advantages SmallSmall diameterdiameter ~~ 11 --33 nmnm •• DemonstratedDemonstrated ••

AdvantagesAdvantages

SmallSmall diameterdiameter ~~ 11--33 nmnm

•• DemonstratedDemonstrated •• -->10>10 1212 /cm/cm 22 densitydensity (long(long termterm goal)goal) •• NotNot listedlisted inin ITRSITRS 0303

InterconnectsInterconnects

listedlisted inin ITRSITRS 0303 InterconnectsInterconnects •• DemonstratedDemonstrated •• UltraUltra --
listedlisted inin ITRSITRS 0303 InterconnectsInterconnects •• DemonstratedDemonstrated •• UltraUltra --

•• DemonstratedDemonstrated •• UltraUltra--lowlow parasiticparasitic capacitancecapacitance (10(10 --1616 F/F/µµm)m) •• UsefulUseful forfor molecular,molecular, singlesingle electronelectron memorymemory •• ConductivityConductivity forfor SWNTSWNT 10x10x higherhigher thanthan coppercopper demonstrateddemonstrated •• NotNot listedlisted inin ITRSITRS 0303

Speed/mobilitySpeed/mobility

listedlisted inin ITRSITRS 0303 Speed/mobilitySpeed/mobility •• ResearchResearch topictopic •• HighHigh --
listedlisted inin ITRSITRS 0303 Speed/mobilitySpeed/mobility •• ResearchResearch topictopic •• HighHigh --

•• ResearchResearch topictopic •• HighHigh--mobility:mobility: demonstrated,demonstrated, interpretinterpret withwith cautioncaution •• BallisticBallistic transport:transport: demonstrated,demonstrated, whywhy advantage?advantage? •• ListedListed inin ITRSITRS 0303

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

6464

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 6464
Disadvantages Disadvantages CurrentCurrent synthesissynthesis paradigmparadigm notnot scalablescalable •• HighHigh

DisadvantagesDisadvantages

Disadvantages Disadvantages CurrentCurrent synthesissynthesis paradigmparadigm notnot scalablescalable •• HighHigh

CurrentCurrent synthesissynthesis paradigmparadigm notnot scalablescalable

•• HighHigh temperaturetemperature (900(900 C)C) •• NotNot preciselyprecisely positionedpositioned afterafter synthesissynthesis •• DiameterDiameter notnot preciselyprecisely controlledcontrolled

PathPath toto integrationintegration unclearunclear

•• AllAll circuitscircuits soso farfar useuse lilithographythography forfor electricalelectrical contactscontacts

ElectricalElectrical propertiesproperties (may(may bebe ok)ok)

propertiesproperties (may(may bebe ok)ok) •• SmallSmall currentcurrent levelslevels ((
propertiesproperties (may(may bebe ok)ok) •• SmallSmall currentcurrent levelslevels ((

•• SmallSmall currentcurrent levelslevels ((microampsmicroamps)) •• HighHigh impedanceimpedance (~10(~10 kohmskohms))

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

6565

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 6565
Mobility/speed Mobility/speed “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar
Mobility/speed Mobility/speed “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar
Mobility/speed Mobility/speed “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar
Mobility/speed Mobility/speed “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar
Mobility/speed Mobility/speed “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar
Mobility/speed Mobility/speed “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar
Mobility/speed Mobility/speed “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar
Mobility/speed Mobility/speed “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar
Mobility/speed Mobility/speed “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar
Mobility/speed Mobility/speed “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar
Mobility/speed Mobility/speed “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar
Mobility/speed Mobility/speed “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

Mobility/speedMobility/speed

Mobility/speed Mobility/speed “AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

OctoberOctober 20,20, 20042004

UCSDUCSD

PeterPeter J.J. BurkeBurke

6666

SmallSmall signalsignal ACAC equivalentequivalent circuit:circuit: If we are only interested in ac components, life can

SmallSmall signalsignal ACAC equivalentequivalent circuit:circuit:

If we are only interested in ac components, life can be simplified:

only interested in ac components, life can be simplified: v V CC i ω t i

v

V CC i ω t i = I + i e D D d i
V
CC
i
ω
t
i
=
I
+ i
e
D
D
d
i
ω
t
=
V
+
v
e
v
=
V
+
v
e
GS
GS
gs
D
D
d
i
ω
t
i
=
I
+ i
e
G
G
g
i
ω
t
i
=
I
+
i e
S
S
s

i

t

ω

“AC performance of nano-electronics” EEEE DepartmentDepartment SeminarSeminar

UCSDUCSD

OctoberOctober 20,20, 20042004

PeterPeter J.J. BurkeBurke

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 6767
EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 6767

6767

EEEE DepartmentDepartment SeminarSeminar UCSDUCSD OctoberOctober 20,20, 20042004 PeterPeter J.J. BurkeBurke 6767
i s d General General admittance admittance matrix matrix In general: i i = 

i

s

d

i s d General General admittance admittance matrix matrix In general: i i =  .
i s d General General admittance admittance matrix matrix In general: i i =  .
i s d General General admittance admittance matrix matrix In general: i i =  .

GeneralGeneral admittanceadmittance matrixmatrix

In general:

i

i

=

.

.

.

 

.   v  

i

.

.

     .   v      i .

i ,v

d

d

 

.

.

.

 i . . i , v d d       
 i . . i , v d d       
 i . . i , v d d       
 i . . i , v d d       
 i . . i , v d d       
 i . . i , v d d       
 i . . i , v d d       
 i . . i , v d d       
 i . . i , v d d       
 i . . i , v d d       
 i . . i , v d d       
 i . . i , v d d       
 i . . i , v d d       

i ,v

s

s

s

v

v

d

g

i ,v

g

g

 

g

   . . . i , v s s s v v d g

+ i

g

Y-matrix has 9 elements, but once you know 4 you know them all because:

Only need:

= i

d

s

i

 

   

g

0

m

v

0       v   

  

0

  =

g

i

d

g

v

d

gs

 v       0   = g i d g

v   h

h

 

 

i

g

d

11

21

=

h       i   

h

  

12

22

g