1.

Coherently controlled quantum emitters in cavities, Muller A, Flagg EB, Deppe D G, Salamo GJ, Shih CK, ADVANCES IN PHOTONICS OF QUANTUM COMPUTING, MEMORY, AND C OMMUNICATION III Book Series: Proceedings of SPIE-The International Society for Optical Engineering Volume: 7611 Pages: - Published: 2010 2. Quantum Size Effects on Work Function of Metallic Nanostructures, Jungdae Kim, Shengyong Qin, Wang Yao, Qian Niu, M. Y. Chou, and Chih-Kang Shih, Proc. Natl. A cad. Sci. vol 107, page 12761, (2010). 3. Experimental Evidence of Single-Phonon Mediated Inter-Level Excitonic Transiti ons in a Semiconductor Quantum Dot, Flagg EB, Robertson JW, Founta S, Ma WQ, Xiao M, Salamo GJ, Shih CK, 2009 Conference on Lasers and Electro-optics and Quantum Electronics and Laser Science Conference (CLEO/QELS 2009), VOLS 1-5, Pages: 209 2-2093 (2009) 4. Visualizing quantum well state perturbations of metallic thin films near stack ing fault defects, by Alexander A. Khajetoorians, Gregory A. Fiete, and Chih-Kang Shih, PHYSICAL REVIEW B 81, 041413 (R) (2010).. 5. Adsorbate-induced restructuring of Pb nanomesas grown on vicinal Si(111) in th e quantum regime, Alexander Ako Khajetoorians, Wenguang Zhu, Jisun Kim, Shengyong Qin, Holger Eisele, Zhenyu Zhang, and Chih-Kang Shih, PHYSICAL REVIEW B 80, 245 426 (2009). 6. Propagating Surface Plasmon Induced Photon Emission from Quantum Dots, Hong Wei , Daniel Ratchford, Xiaoqin (Elaine) Li, Hongxing Xu, and Chih-Kang Shih, Nano L etters, 9, 4168 (2009). 7. Luminescent properties of ensemble and individual erbium-doped yttrium oxide n anotubes, Mao YB, Guo X, Tran T, et al., JOURNAL OF APPLIED PHYSICS Volume: 105 I ssue: 9 Article Number: 094329 Published: MAY 1 2009 8. Superconductivity at the Two-dimensional Limit, Shengyong Qin, Jungdae Kim, Qia n Niu and Chih-Kang Shih, Science 324, 1314 (2009). 9. Luminescence of Nanocrystalline Erbium-Doped Yttria Mao YB, Tran T, Guo X, et al., Source: ADVANCED FUNCTIONAL MATERIALS Volume: 19 Issue: 5 Pages: 748-754 Pu blished: MAR 10 2009 10. Resonantly driven coherent oscillations in a solid-state quantum emitter, Fla gg EB, Muller A, Robertson JW, et al. Source: NATURE PHYSICS Volume: 5 Issue: 3 Pages: 203-207 Published: MAR 2009 11. Direct Evidence of Interlevel Exciton Transitions Mediated by Single Phonons in a Semiconductor Quantum Dot Using Resonance Fluorescence Spectroscopy, Flagg EB, Robertson JW, Founta S, et al. Source: PHYSICAL REVIEW LETTERS Volume: 102 I ssue: 9 Article Number: 097402 Published: MAR 6 2009 12. Energy Transfer within Ultralow Density Twin InAs Quantum Dots Grown by Drop let Epitaxy Liang BL, Wang ZM, Wang XY, et al. Source: ACS NANO Volume: 2 Issue: 11 Pages: 2219-2224 Published: NOV 2008 13. VLS growth of Si nanocones using Ga and Al catalysts, Bae J, Kulkarni NN, Zho u JP, et al. Source: JOURNAL OF CRYSTAL GROWTH Volume: 310 Issue: 20 Pages: 4407 -4411 Published: OCT 1 2008 14. Pattern formation of nanoflowers during the vapor- liquid- solid growth of si licon nanowires, Bae J, Thompson-Flagg R, Ekerdt JG, et al. Source: PHYSICA B-CON DENSED MATTER Volume: 403 Issue: 19-20 Pages: 3514-3518 Published: OCT 1 2008

15. Comment on "Coherent control of a V-type three-level system in a single quan tum dot'' Reply, Cheng MT (Cheng, M. T.), Bianucci P (Bianucci, P.), Muller A (M uller, A.), Zhou HJ (Zhou, H. J.), Wang QQ (Wang, Q. Q.), and Shih CK (Shih C.K. ), Phys. Rev. Lett. vol. 101, 049702 (2008) 16. Observation of simultaneous fast and slow light, Bianucci P, Fietz CR, Roberts on JW, et al. PHYSICAL REVIEW A Volume: 77 Issue: 5 Article Number: 053816 (2008 ) 17. Adsorbate-induced restructuring of Pb nanomesas grown on vicinal Si(111) in t he quantum regime, Alexander Khajetoorians, Wenguang Zhu, Shengyong Qin, Holger E isele, Zhenyu Zhang, and Chih-Kang Shih, Phys Rev Lett (submitted May 2008) 18. VLS growth of Si nanocones using Ga and Al catalysts, J. Bae, N. Kulkarni, J.P . Zhou, J.G. Ekerdt, and C.K. Shih, Journal of Crystal Growth 310 (2008), pp. 44 07-4411 19. Pattern formation of nanoflowers during the vapor-liquid-solid growth of sili con nanowires, J. Bae, N. Kulkarni, B. Thompson, J. Ekerdt, and C.K. Shih, Physic a B 403, pp 3514-3518 (2008). 20. "Structural Characterization and Temperature-Dependent Photoluminescence of Linear CdTe/CdSe/CdTe Heterostructure Nanorods" by Aaron E. Saunders, Bonil Koo, Xiaoyong Wang, C. K. Shih, B. A. Korgel, ChemPhysChem, vol 9, 1158 (2008). 21. Resonant Fluorescence from a Coherently Driven Semiconductor Quantum Dot in a Cavity, A. Muller, E. B. Flagg, P. Bianucci, X.Y. Wang, D. G. Deppe, W. Ma, J. Z hang, G. J. Salamo, M. Xiao, and C. K. Shih, Phys. Rev. Lett. 99, 187402 (2007). 22. Single dot spectroscopy of site-controlled InAs quantum dots nucleated on GaA s nanopyramids, T. Tran T, A. Muller, C.K. Shih, P.S. Wong PS, G. Balakrishnan, N . Nuntawong, J. Tatebayashi, D.L. Huffaker, APPLIED PHYSICS LETTERS 91 (13): Art . No. 133104 SEP 24 2007 23. Pablo Bianucci, Chris R. Fietz, John W. Robertson, Gennady Shvets and Chih-K ang Shih, "Polarization conversion in a silica microsphere", Optics Express 15, 6999--7004 (2007) 24. Pablo Bianucci, Chris R. Fietz, John W. Robertson, Gennady Shvets and Chih-K ang Shih, "Whispering gallery resonators as polarization converters", Optics Let ters 32, 2224-2226 (2007) 25. Khajetoorians AA, Li J, Shih CK, Wang XD, Garcia-Gutierrez D, Jose-Yacaman M , Pham D, Celio H, Diebold A, Dopant characterization of fin field-effect transis tor structures using scanning capacitance microscopy, JOURNAL OF APPLIED PHYSICS 101 (3): Art. No. 034505 FEB 1 2007 26. Self-aligned all-epitaxial microcavity for cavity QED with quantum dots, A. Mu ller, D. Lu, J. Ahn, D. Gazula, S. Quadery, D.G. Deppe, and C.K. Shih, Nano Lett ers 6 (12): 2920-2924 DEC 13 2006. 27. Scanning Tunneling Spectroscopy of Ag films: The Effect of Periodic vs. Quasi periodic Modulation, Daejin Eom, C.S. Jiang, H.-B. Yu, J. Shi, Q. Niu, Ph. Ebert, and C.K. Shih, Phys Rev Lett 97, 206102 (2006) 28. Internal and external polarization memory loss in single quantum dots, Wang,Q. Q., Muller,A., Cheng,M.T., Zhou,H.J., Bianucci,P., Shih,C.K. Appl. Phys. Lett. 8 9, 142112 (2006) 29. Enhanced dipole-dipole interaction of CdSe/CdS nanocrystal quantum dots insid

e a planar microcavity Xiaoyong Wang, Chih-Kang Shih, Jianfeng Xu and Min Xiao, A ppl. Phys. Lett. 89, 113114 (2006). 30. Direct spectroscopic evidences for the formation of one-dimensional wetting w ires during the growth of InGaAs/GaAs quantum dot chains, Xiaoyong Wang, Zhiming Wang, Gregory J. Salamo, and Chih-Kang Shih, Nano Letters 6, 1847 (2006). 31. Nanoparticles of Er-doped glass produced by laser ablation of microparticles, Keto JW, Becker ME, Kovar D, Malyavanatham G, Muller A, O'Brien DT, Shih CK, Wan g J; JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS 23 (8): 1581-15 85 AUG 2006 32. Atomic force microscopy study of sapphire surfaces annealed with a H2O flux from a baffled molecular-beam epitaxy effusion cell loaded with Al(OH)3, Oye MM, Hurst JB, Shahrjerdi D, Kulkarni NN, Muller A, Beck AL, Sidhu R, Shih CK, Baner jee SK, Campbell JC, Holmes AL, Mattord TJ, Reifsnider JM, J. Vac. Sci. Technol B. 24, 1572 (2006). 33. Time-Resolved Spectroscopy of Individual Impurity Centers in ZnSe A. Muller, P . Bianucci, C. Piermarocchi, M. Fornari, I. C. Robin, R. Andr, and C. K. Shih, Ph ys. Rev. B 73, 081306(R) (2006) 34. Study of Two-Dimensional B Doping Profile in Si FinFET Structures by High Ang le Annular Dark Field, D.I. Garcia-Gutierrez, M. Jose-Yacaman, A. A. Khajetoorian s, C.K. Shih, X.-D. Wang, D. Pham, H. Celio, A. Diebold, J. Vac. Sci. Technol B. 24, 730 (2006) 35. Photoluminescence Intermittency of InGaAs/GaAs Quantum Dots Confined in a Pla nar Microcavity, X. Y. Wang, C. K. Shih, W. Q. Ma, J. Y. Zhang, G. J. Salamo, and Min Xiao, Nano Letters vol 5, 1873 (2005). 36. Persistent superconductivity in ultra-thin Pb films: A scanning tunneling spe ctroscopy study, Daejin Eom, S. Qin, M.-Y. Chou, and C.K. Shih, Phys. Rev. Lett. 96, 027005 (2006). 37. High Q (33 000) all-epitaxial microcavity for quantum dot vertical-cavity sur face-emitting lasers and quantum light sources, Andreas Muller, Chih-Kang Shih, J aemin Ahn, Dingyuan Lu, Deepa Gazula, and Dennis G. Deppe, Appl. Phys. Lett 88, 031107 (2006). 38. Isolated single quantum dot emitters in all-epitaxial micro-cavities, A. Mulle r, C.K. Shih, J. Ahn, D. Lu, and D. Deppe, Opt. Lett. 31, 528 (2006). 39. Cell motility and local viscoelasticity of fibroblasts, Park S, Koch D, Carden as R, Kas J, Shih CK, BIOPHYSICAL JOURNAL 89 (6): 4330-4342 DEC 2005. 40. Coherent control of a V-type three-level system in a single quantum dot, Q. Q. Wang, A. Muller, M. T. Cheng, H. J. Zhou, P. Bianucci, and C. K. Shih, Phys. Re v. Lett. 95, 187404 (2005). 41. Low Threshold Field Emission from Cesiated Silicon Nanowires, N. N. Kulkarni, J. Bae, C.K. Shih, S. Stanley, S. Coffee and J. Ekerdt, Appl. Phys. Lett. 87 (21 ): Art. No. 213115 NOV 21 2005. 42. Three-dimensional Modeling of Nanoscale Seebeck Measurements by Scanning Ther moelectric Microscopy, Zhixi Bian, Ali Shakouri, Li Shi, Ho-Ki Lyeo, and C. K. Sh ih, Appl. Phys. Lett. 87, 053115 (2005). 43. Quality factors of qubit rotations in single semiconductor quantum dots, Q. Q. Wang, A. Muller, P. Bianucci, C. K. Shih, and Q.K. Xue, Appl. Phys. Lett. 87, 0

31904 (2005). 44. Decoherence processes during optical manipulation of excitonic qubits in semi conductor quantum dots, Q. Q. Wang, A. Muller, P. Bianucci, E. Rossi, Q. K. Xue, T. Takagahara, C. Piermarocchi, A. H. MacDonald, and C. K. Shih, Phys. Rev. B 72 , 035306 (2005). 45. Quantum Growth of Magnetic Nanoplatelets of Co on Si with High Blocking Tempe rature, M-H Pan, H. Liu, J-Z Wang, J-F Jia, Q-K Xue, J-L Li, S. Qin, U. M. Mirsai dov, X-R Wang, J. T. Markert, Z. Zhang, and C. K. Shih, Nano letters Vol. 5, No. 1, 87-90 (2005). 46. Spatial correlation-anticorrelation in strain-driven self-assembled InGaAs qu antum dots, X.-D. Wang, N. Liu, C. K. Shih, S. Govindaraju, and A. L. Holmes, Jr. , Appl. Phys. Lett. 85, 1356 (2004). 47. Experimental realization of the one qubit Deutsch-Jozsa algorithm in a quantu m dot, P. Bianucci, A. Muller, Q. Q. Wang, Q.-K. Xue, C. Piermarocchi, and C. K. Shih, Phys. Rev. B 69,161303(R), 2004. 48. Wan Young Jang, N.N.Kulkarni, C.K. Shih and Zhen Yao, Electrical characteriza tion of individual carbon nanotubes grown in nanoporous anodic alumina templates, Appl. Phys. Lett. 84, 1177, (2004).

49. C.S. Jiang, S.C. Li, H.B. Yu, D. Eom, X. D. Wang, P. Ebert, J.F. Jia, Q.K. Xue, a d C.K. Shih, Building Pb nano-mesas with atomic layer precision, Phys. Rev. Lett. 92, 106104 (2004) 50. Ho-Ki Lyeo, A.A. Khajetoorians, Li Shi, Kevin Pipe, Rajeev J. Ram, Ali Shako uri, and C.K. Shih, Mapping Thermoelectric Power of Semiconductor Junctions with Nanometer Resolution, Science 303, 186 (2004). 51. R. E. Mahaffy, S. Park, E. Gerde, F. Mackintosh, J. Ks, and C. K. Shih Quantit ative analysis of the viscoelastic properties in thin regions of fibroblasts usi ng AFM, Biophysical Journal 86:1777-1793 (2004) 52. D. Kulik, H. Htoon, and C. K. Shih, Yadong Li Photoluminescence properties of single CdS nanorods, J. Appl. Phys. 95, 1056 (2004) 53. Muller, Q. Q. Wang, P. Bianucci, C. K. Shih, and Q. K. Xue, "Determination o f Anisotropic Dipole Moments ..." Appl. Phys. Lett. 84, 981 (2004). 54. H. Htoon and C. K. Shih, Ultrafast Coherent Dynamics in Semiconductor Quantum Dots. TOPICS IN APPLIED PHYSICS 92: 99-137 (2004) Ultrafast Dynamical Processes i n Semiconductors edited by K. T. Tsen. (Springer-Verlag, Heidelberg, 2004). 55. Quantum coherence phenomena in semiconductor quantum dots: quantum interferen ce, decoherence and Rabi oscillation, H. Htoon, C. K. Shih and T. Takagahara, in Chao, Solitons, and Fractals, vol. 16, page 439, (2003). 56. Effect of the Si substrate structure on the growth of two-dimensional thin Ag -films, C.-S. Jiang, Hongbin Yu, C.-K. Shih, Ph. Ebert, Surface Science. 518, 63 (2002). 57. Probing the step structure of buried metal/semiconductor interfaces using qua ntized electron states: The case of Pb on Si(111) 6x6-Au, H.-B.Yu, C.-S. Jiang, P . Ebert, C.-K. Shih, Appl. Phys. Lett. 81, 2005 (2002). 58. Cross-sectional scanning tunneling microscopy study of InGaAs quantum dots on GaAs(001) grown by heterogeneous droplet epitaxy, N. Liu, H.-K. Lyeo, C.-K. Shih

, M. Oshima, T. Mano, N. Koguchi, Appl. Phys. Lett. 80, 4345 (2002). 59. Interplay of Rabi oscillations and quantum interference in semiconductor quan tum dots, H. Htoon, T. Takagahara, D. Kulik, O. Baklenov, A.L. Holmes Jr., and C. K. Shih, Phys. Rev. Lett. 88, 087401 (2002) 60. Quantitative Determination of the Metastability of Flat Ag Overlayers on GaAs (110), Hongbin Yu, C. S. Jiang, Ph. Ebert, X. D. Wang, J. M. White, Qian Niu, Zhe nyu Zhang, and C. K. Shih, Phys. Rev. Lett. 88, 016102 (2002). 61. Scanning tunneling spectroscopy of quantum well and surface states of thin Ag films grown on GaAs(110), Jiang CS, Yu HB, Wang XD, Shih CK, Ebert P, Phys. Rev. B 64, 235410 (2001). 62. Temperature-Dependent Electron Transport through Silver Nanocrystal Superlatt ices, R. Christopher Doty, Hongbin Yu, C. Ken Shih, Brian A. Korgel, J. Phys. Che m. B 105, 8291 (2001). 63. Carrier relaxation and quantum decoherence of excited states in self-assemble d quantum dots, H. Htoon, D. Kulik, O. Baklenov, A.L. Holmes Jr., T. Takagahara, C.K. Shih, Phys. Rev. B 63, 241303, (2001). 64. Viscoelastic and active response of neuronal growth cones to mechanical stimu li by AFM, Lakadamyali M, Mahaffy R, Furnish B, Bayer J, Mackintosh F, Shih CK, S chmidt C, Kas J, Biophys. J.(Annual Meeting Abstracts) (2001). 65. Scanning tunneling microscopy of defects in quasiperiodically ordered surface s, Ebert Ph, Chao KJ, Niu Q, Shih CK, Plummer EW, Urban K, Mat. Sci. Eng. A 294, 826 (2000). 66. Scanning probe-based frequency-dependent microrheology of polymer gels and bi ological cells, Mahaffy RE, Shih CK, MacKintosh FC, Kas J, Phys.Rev. Lett. 85, 88 0 (2000). 67. Cross-sectional Nano-photoluminesce Studies of Stark Effects in Self-Assemble d Quantum Dots, H. Htoon, O. Baklenov, A. L. Holmes, J. Keto, and C. K. Shih, App l. Phys. Lett. 76, 700 (2000). 68. Non-uniform composition in InGaAs alloy quantum dots, N. Liu, J. Tersoff, O. B aklenov, A.L.Holmes Jr., and C.K. Shih, Phys. Rev. Lett. 84, 334 (2000). 69. 2-D dopant profile of 0.2 micron metaloxidesemiconductor field effect transisto rs, X.-D. Wang, R. Mahaffy, K. Tan, C. K. Shih, J. J. Lee, and M. Foisy, J. Vac. Sci. Tech. B 18, 560 (2000). 70. Comparative study of 2-D junction profiling using a dopant selective etching method and the scanning capacitance spectroscopy method, R. Mahaffy, C.K. Shih, a nd H. Edwards, J. Vac. Sci. Tech. B 18, 566 (2000). 71. Quantitative 2-D Profiling of 0.35m Transistors with Lightly-doped-drain Stru ctures, A. McDonald, R. Mahaffy, X.-D. Wang, K. Kuklewicz, C.K. Shih, M. Dennis, D. Tiffin, D. Kadoch, and M. Duane, J. Vac. Sci.. Tech. B 18, 572 (2000) 72. Nano-photoluminescence studies of self assembled quantum dots, H. Htoon, H. Yu , D. Kulik, J.W. Keto, O. Baklenov, A. L. Holmes, and C. K. Shih, Self-Organized Processes in Semiconductor Alloys Eds. A. Mascarenhas, B. Joyce, T. Suzuki, D. Follastaedt, MRS symposium Proceedings, v. 538, 105 (1999). 73. Dislocations, phason defects, and domain walls in a one-dimensional quasiperi odic superstructure of a metallic thin film, Ph. Ebert, K.-J. Chao, Q. Niu, and C

.K. Shih, Phys. Rev. Lett. 83, 3222 (1999). 74. Quantum dots at the nanometer scale: Interdot carrier shuffling and multipart icle states, H. Htoon, Hongbin Yu, D. Kulik, J. W. Keto, O. Baklenov, A. L. Holme s, Jr., B. G. Streetman, and C. K. Shih, Phys. Rev. B 60, 11026 (1999). 75. Various factors influencing interfacial roughness of InGaAs/GaAs heterostruct ures: a cross-sectional scanning tunneling microscopy study, K.-J. Chao, C.K. Shi h, D.W. Gotthold and B.G. Streetman, Appl. Phys. Lett.75, 1703 (1999). 76. Substrate effects on the formation of flat Ag films on (110) surface of III-V semiconductors, K.-J. Chao, Z. Zhang, Ph. Ebert, and C.K. Shih, Phys. Rev. B 60, 4988 (1999). 77. Quantum effect in metal overlayers on semiconductor substrate by J.-H. Chao, Q . Niu, C.-K. Shih, Z. Suo, and Z. Zhang, Morphological Organization in Epitaxial Growth and Removal, Eds. Z. Zhang and M.G. Lagally, pp.149 173, World Scientific , Singapore, (1998). 78. Growing atomically flat metal films on semiconductor substrates, C.K. Shih, Mo rphological Organization in Epitaxial Growth and Removal, Eds. Z. Zhang and M.G. Lagally, pp. 438 449, World Scientific, Singapore, (1998). 79. Alloy ordering in GaInP alloys: A cross-sectional scanning tunneling microsco py study, N. Liu, C.K. Shih, J. Geisz, A. Mascarenhas, and J.M. Olson, Appl. Phys . Lett. 73, 1979 (1998). 80. Electronic growth of metallic overlayers on semiconductor substrates, Z. Zhang, Q. Niu, and C.K. Shih, Phys. Rev. Lett. 80, 5381 (1998). 81. Two-dimensional pn-junction delineation and individual dopant identification using scanning tunneling microscopy / spectroscopy, K.-J. Chao, A.R. Smith, A.J. McDonald, D.-L. Kwong, B.G. Streetman, and C.K. Shih, J. Vac. Sci. Tech. B 16, 4 53 (1998). 82. Scanning Capacitance Spectroscopy: A New Analytical Technique for pn-Junction Delineation in Si Devices, Hal Edwards, Rachel Mahaffy, Rudye McGlothlin, Richar d San Martin, Elisa U, Michael Gribelyuk, R. Scott List, C. Ken Shih, and Vladim ir A. Ukraintsev, Appl. Phys. Lett. 72, 698 (1998). 83. "Determination of 2D pair correlations and pair interaction energies of In a toms in molecular beam epitaxially grown InGaAs alloys," K.-J. Chao, C.K. Shih, D.W. Gotthold, B.G. Streetman, Phys. Rev. Lett. vol. 79, 4822 (1997). 84. "Atomic Force Microscopy and Scanning Tunneling Microscopy," C.-K. Shih and X.-D. Wang, page 149, Materials and Process Characterization of Ion Implantation , edited by M.I. Current and C.B. Yarling, Ion Beam Press, Austin, Texas, 1997. 85. "Formation of atomically flat silver film on GaAs with a silver-mean quasi periodicity," A.R. Smith, K.-J. Chao, Q. Niu, and C.K. Shih, Science vol. 273, 2 26 (1996). 86. "Identification of first and second layer Al-atoms in dilute AlGaAs using cr oss-sectional scanning tunneling microscopy," A.R. Smith, K.-J. Chao, C.K. Shih, A. Anselm, and B.G. Streetman, Appl. Phys. Lett. vol. 69, 1214 (1996). 87. "A design of reflection scanning near-field optical microscope and its appli cation to AlGaAs/GaAs heterostructures," G. Guttroff, J. Keto, C. K. Shih, A. An selm, and B.G. Streetman, Appl. Phys. Lett. vol. 68, 3620 (1996).

88. "2-D dopant profiling of VLSI devices using selective etching and atomic for ce microscopy," M.C. Barrett, C.K. Shih, M. Dennis, D. Tiffin, and Y. Li, J. Vac . Sci. and Technol B vol. 14, 447 (1996). 89. "STM-induced chemical vapor deposition of semiconductor quantum dots," D. Sa mara, J.R. Williamson, C.K. Shih, and S.K. Banerjee, J. Vac. Sci. Technol. B vol . 14, 1344 (1996). 90. "Variable low temperature scanning tunneling microscopy studies of (2x1) to c(2x4) phase transition on Si (001)," A.R. Smith, F.-K. Meng, and C.K. Shih, J. Vac. Sci. Technol. B vol. 14, 914 (1996). 91. "Scanning tunneling microscopy investigation of the dimer vacancy-dimer vaca ncy interaction on the Si(001) 2xn surface," A.R. Smith, F.-K. Meng, K.-J. Chao, Z. Zhang, and C.K. Shih, J. Vac. Sci. Technol. B vol. 14, 909 (1996). 92. "Direct determination of exact charge states of surface point defects using scanning tunneling microscopy: the Case of As-vacancy on GaAs(110)," K.-J. Chao, A.R. Smith, and C.K. Shih, Phys. Rev. B. vol. 53, 6935 (1996). 93. "Application of scanning tunneling microscopy to determine the charge state of surface point defects," K.-J. Chao, A.R. Smith, and C.K. Shih, J. Vac. Sci. T echnol. B vol. 14, 948 (1996). 94. "Thermal Formation of Zn-dopant - vacancy defect complexes on InP(110) surfa ces," Ph. Ebert, M. Heinrich, M. Simon, C. Domke, K. Urban, C.K. Shih, M.B. Webb , and M.G. Lagally, Phys. Rev. B. vol. 53, 4580 (1996). 95. "Temperature dependent compensation of Zn-dopant atoms by vacancies in III-V semiconductor surfaces," Ph. Ebert, M. Heinrich, K. Urban, K.-J. Chao, A.R. Smi th, and C.K. Shih, J. Vac. Sci. and Technol A vol. 14, 1807 (1996). 96. "Dimer vacancy - dimer vacancy interactions on the Si(001) surface: The natu re of 2xn structure, F. K. Men, A.R. Smith, K.-J. Chao, Z. Zhang, and C.K. Shih, Phys. Rev. B 52, R8650 (1995). 97. "Cross-sectional STM of AlAs/GaAs short period superlattices: the influence of growth interrupt on the interfacial structure," A.R. Smith, K.-J. Chao, C.K. Shih, Y.C. Shih, and B.G. Streetman, Appl. Phys. Lett. 66, 478 (1995). 98. "A new variable low-temperature scanning tunneling microscope for use in ult ra-high-vacuum," A.R. Smith and C.K. Shih, Rev. Sci. Instr. 66, 2499 (1995). 99. "Double-tip STM for surface analysis," Q. Niu, M. Chang, and C.K. Shih, Phys . Rev. B 51, 5502 (1995). 100. "2-D dopant profiling in Si-VLSI devices," M.C. Barret, M. Dennis, Y. Li, D . Tiffin, and C.K. Shih, IEEE Electron Device Letters 16, 118 (1995). 101. "Influence of various growth parameters on the interface abruptness of AlAs /GaAs short period superlattices," A.R. Smith, K.-J. Chao, C.K. Shih, Y.C. Shih, K.A. Anselm, and B.G. Streetman, J. Vac. Sci. and Technol B 13, 1824 (1995). 102. "A new high-resolution two-dimensional micropositioing device for scanning probe microscopy applications," A.R. Smith and C.K. Shih, Rev. Sci. Instr. 65, 3 216 (1994). 103. "A comparative study of cross-sectional scanning tunneling microscopy / spe ctroscopy on III-V hetero- and homostructures: UHV-cleaved vs. sulfide-passivate d," A.R. Smith, S. Gwo, Y.C. Shih, B.G. Streetman, and C.K. Shih, J. Vac. Sci. a

nd Technol B 12, 2610 (1994). 104. "Cross-sectional scanning tunneling microscopy of doped and undoped AlGaAs/ GaAs heterostructures," S. Gwo, K.-J. Chao, and C. K. Shih, Appl. Phys. Lett. 64 , 492 (1994) 105. "Cross-sectional scanning tunneling microscopy and spectroscopy of passivat ed III-V heterostructures," S. Gwo, A.R. Smith, K.-J. Chao, C.K. Shih, K. Sadra, Y.C. Shih, and B.G. Streetman, J. Vac. Sci. and Technol A 12, 2005 (1994). 106. "Direct Mapping of Electronic Structure Across Al0.3Ga0.7As/GaAs Heterojunc tions: Band Offsets, Asymmetrical Transition Widths, and Multiple-Valley Band St ructures," S. Gwo, K.-J. Chao, C. K. Shih, K. Sadra, and B. G. Streetman, Phys. Rev. Lett. 71 1883, (1993). 107. "Vacancy migration, adatom motion, and atomic bistability on the GaAs(110) surface studied by scanning tunneling microscopy", S. Gwo, A. R. Smith, and C. K . Shih, J. Vac. Sci. and Technol A 11, 1644 (1993) . 108. "Site-selective imaging in scanning tunneling microscopy of graphite: The n ature of site-asymmetry," S. Gwo and C. K. Shih, Phys. Rev. B 47, 13059 (1993). 109. "Scanning tunneling microscopy of doping and compositional III-V homo- and heterostructures," S. Gwo, K.-J. Chao, C.K. Shih, K. Sadra, and B.G. Streetman, J. Vac. Sci. and Technol B 11, 1509 (1993). 110. "Scanning tunneling microscopy of GaAs multiple pn junctions," S. Gwo, A. R . Smith, C. K. Shih, K. Sadra, and B. G. Streetman, Appl. Phys. Lett. 61, 1104 ( 1992). 111. "Scanning tunneling microscopy and spectroscopy of BiSrCaCuO 2212 compounds ," C. K. Shih, R. M. Fennstra, and G. V. Chandrashekhar, Phys. Rev. B. 43, 7919 (1991). 112. "Electronic structure of NiO: Correlation and band effects," Z.-X. Shen, R. S. List, D.S. Dessau, O. Jepsen, A.J. Arko, R. Barttlet, C. K. Shih, F. Parmigia ni, B.O. Wells, J.C. Hwang, and P.A.P. Lindberg, Phys. Rev. B 44, 3604 (1991). 113. "Aspects of correlation effects, antiferromagnetic order, and translational symmetry of the electronic structure of NiO and CoO," Z.-X. Shen, C. K. Shih, O . Jepsen, W. E. Spicer, I. Lindau, and J. W. Allen, Phys. Rev. Lett. 64, 2442 (1 990). 114. "Scanning tunneling microscopy and spectroscopy of thin metal films on the GaAs(110) Surface," C.K. Shih, R.M. Feenstra, and P. Mrtensson, J. Vac. Sci. and Technol, A8, 3379 (1990). 115. "Scanning tunneling microscopy and spectroscopy of cleaved BiSrCaCuO high T c superconductors," C.K. Shih, Modern Physics Letters B 3 , 1113 (1989). 116. "Surface structural and electronic properties of cleaved single crystals of BiSrCaCuO compounds: A scanning tunneling microscopy study," C.K. Shih, R.M. Fe enstra, J.R. Kirtley, and G.V. Chandrashekhar, Phys. Rev. B 40, 2682 (1989). 117. "Scanning tunneling microscopy and first-principles theory of Sn/GaAs(110) surface," C.K. Shih, E. Kaxiras, R.M. Feenstra, and K.C. Pandey, Phys. Rev. B 40 , 10044 (1989). 118. "k-resolved alloy bowing in pseudobinary In1-xGaxAs alloys," J. Hwang, P. P ianetta, Y.-C. Pao, C.K. Shih, Z.-X. Shen, P.A.P. Lindberg, and R. Chow, Phys. R

ev. Lett. 61, 877 (1988). 119. "Use of low temperature to reduce intermixing at metal:HgCdTe contacts," G. P. Carey, D.J. Freeman, A.K. Wahi, C.K. Shih and W.E. Spicer, J. Vac. Sci. and T echnol. A 6, 2736 (1988). 120. "Natural band lineups in II-VI compound semiconductors and their alloys," C .K. Shih, A.K. Wahi, I. Lindau and W.E. Spicer, J. Vac. Sci. and Technol. A 6, 2 640 (1988). 121. "The effect of strain on the band structure of GaAs(001) and In0.2Ga0.8As(0 01)," J. Hwang, C.K. Shih, P. Pianetta, L.D. Kubiak, H. Stulen, L.R. Dawson, Y.C. Pao, and J. Harris, Appl. Phys. Lett. 52, 308, (1988). 122. "Determination of the natural valence band offset in In1-xGaxAs system," J. Hwang, C.K. Shih, P. Pianetta, W.E. Spicer, Y.-C. Pao, and J. Harris, Appl. Phy s. Lett. 51, 1632, (1987). 123. "Determination of a natural valence band offset: the case of HgTe and CdTe, " C.K. Shih and W.E. Spicer, Phys. Rev. Lett. 58, 2594 (1987). 124. "Natural valence band offset of HgTe and CdTe," C.K. Shih and W.E. Spicer, J. Vac. Sci. and Technol. B 5, 1231 (1987). 125. "Angle-resolved photoemission study of the alloy scattering effect in HgCdT e alloys," C.K. Shih, J.A. Silberman, A.K. Wahi, G.P. Carey, I. Lindau, W.E. Spi cer, A. Sher and M. Berding, J. Vac. Sci. and Technol. A 5, 3026(1987). 126. "Photoemission study of the core level shifts in HgCdTe, CdMnTe and HgZnTe alloys," C.K. Shih, W.E. Spicer, A. Sher, and J.K. Furdyna, J. Vac. Sci. and Tec hnol. A 5, 3031 (1987). 127. "Electron beam induced Hg desorption and the electronic structure of the Hg depleted surface of Hg1-xCdxTe," C.K. Shih, D.J. Friedman, K.A. Bertness, I. Li ndau, and W.E. Spicer, J. Vac. Sci. and Technol. A 4, 1997 (1986). 128. "The Ag/(Hg,Cd)Te and Al/(Hg,Cd)Te interfaces," D.J. Friedman, G.P. Carey, C.K. Shih, I. Lindau, W.E. Spicer, and J.A. Wilson, J. Vac. Sci. Technol. A 4, 1 977 (1986). 129. "Diffusion of Ag and Hg at the Ag/(Hg,Cd)Te interface," D.J. Friedman, G.P. Carey, C.K. Shih, I. Lindau, W.E. Spicer, and J.A. Wilson, Appl. Phys. Lett. 48 , 44 (1986). 130. "Effects Influencing the Structural Integrity of Semiconductors and Their A lloys," A. Sher, A.-B. Chen, W.E. Spicer, and C.K. Shih, J. Vac. Sci. Technol. A 3, 105 (1985). 131. "Angle Resolved Photoemission Spectroscopy of Hg1-xCdxTe," J.A. Silberman, D.A. Laser, C.K. Shih, D.J. Friedman, I. Lindau, W.E. Spicer, and J.A. Wilson, J . Vac. Sci. Technol. A 3, 233 (1985). 132. "Bond-length relaxation in pseudo-binary alloys," C.K. Shih, W.E. Spicer, W .A. Harrison, and A. Sher, Phys. Rev. B 31, 1139 (1985).