LED Manufacturing

Technologies & Costs

DOE Workshop
April 2009 Presented by: Jeff Perkins

Lumileds

Aixtron

CREE

OSRAM

OSRAM

Nitronex

45 rue Sainte Genevive, F-69006 Lyon, France Tel : +33 472 83 01 80 - Fax : +33 472 83 01 83 Web: http://www.yole.fr
2009

Yole Dveloppement
Lyon, France based market research and strategy consulting firm with 20 full time analysts analysts. Our fields of competence include:
MEMS, including microfluidics Compound Semiconductor (SiC, GaN AlN) (SiC GaN,
LED & Power Devices

Advanced Packaging - 3D IC - TSV Photovoltaic

We provide the following services:

A free monthly newsletter (Micronews) with >23,000 subscribers A news and information web portal (www.i-micronews.com) Market & Technology reports Custom consulting:

2009

Market and technical evaluations and forecasts Market, Market strategy and technical workshops Process cost evaluation & reverse costing Business strategy development

Our Activity is Global

40% of our business is in EU Countries 30% of our business is in North America

Yole Inc. Allendale, NJ

30% of our business is in Asia

Yole Dveloppement Lyon (HQ).

Global Information Inc. (Partner)

2009

Working Along The Value Chain

Yole consultants provide Market Analysis, gy Technology Evaluation and Business Plan Assessment for clients along the entire value chain.
2009

LED Status Summary

The LED market was $5.1B in 2008 with a volume of over 50 billion units. LED applications are currently dominated by portable device backlighting
Mobile phones, PDA, GPS

Higher brightness LEDs have begun to address other promising markets like automotive, LCD backlight and general lighting. g g g
Low-end LED products account for 83% High-Brightness LEDs 15% Emerging Ultra High-Brightness products 2%

Higher efficacy is needed for the General Lighting Market

>150 lm/W has been proven with low-current LED operation (generally 20mA). Today high power LEDs have overall efficiency of 25%. To increase efficiency, 10 key technologies are in use or under investigation

With continued development of a variety of technologies, high power LEDs with 150 lm/W converting more than 50% of input watts to light can be envisioned.

2009

Executive summary

LED Market Key K metrics and players ti d l

2009

LED Market Overview

Conventional LED < 200 mW power 20 lm/W 1 to 3 lm generated T i l epoxy h Typical housing i Cell phone keypad Cell phone backlight Signs High Brightness LED Up to 1 Watt power > 30 lm/W 5 to 30 lm generated S Specific packaging ifi k i Screen backlight Dashboard backlight Large displays Ultra-high brightness white LED up to 5 watt power > 50 lm/W > 100 lm generated Specific packaging S ifi k i Car head-lamps High-End apps General Illumination

Specifications

Application pp markets

ASP (> 10,000 units)

$0.10 $0.20 $0 10 to $0 20 / part

$0.80 $2.00 $0 80 to $2 00 / part

$3.00 $3 00 for 100 lm LED

2009

LED Market

Facilities - CREE
Size and location
Corporate Headquarters

Research Triangle Park (NC, USA)

Technology center and SiC & GaN Power and RF devices manufacturing

Cotco (China)
Production and packaging

Santa Barbara (CA USA) (CA,

Technology center

2009

CREE Business Model

Facilities - LUMILEDS
Size and location
Best (Netherlands): R&D Tokyo: Sales
Marketing, Technical Marketing and Support

San Jose (CA, USA):

Manufacturing plant for LED wafers and chips. Epitaxy fab fab.

Yishun (Singapore): new plant high

power LED wafers production. Investment of 80M$. This 2006 investment permit to double the Singapores Luxeon production by the end of 2007. The 200,000-square-foot building was p purchased from Maxtor.

Penang (Malaysia):
packaging facility. The lines at this plant were the first to include warm white LEDs production in volume. This factory replaced the existing factory of LUMILEDS in 2005 and triple the 2005 capacity capability.

2009

Lumileds Business Model

Facilities - OSRAM
Size and location
Regensburg (Germany):
Headquarters and manufacturing main site

Penang (Malaysia):
Second factory for surfacemounted LEDs, high-power laser diodes and organic LEDs manufacturing. manufacturing Investment of 100-120M$ From 2008, Penang site will also be dedicated to LED dies manufacturing.

2009

10

OSRAM Business Model

LED Market General Ill i ti G l Illumination

2009

General Illumination Market

Worldwide Lighting Estimates

Extrapolating from OIDA 2000 estimates
US US lumen consumption approx 30 000 T lm-hrs in 2008 30,000 lm-hrs 2008. Worldwide = US x 4 = 120,000 T lm-hrs in 2008 Growth rate was estimated at 1.2 % per year Various sources put the market for lighting products near $70B.

Solid State General Lighting market size estimates for 2012 range from $500 million to >$2 5 billion >$2.5 Range of possible LED market penetration:
Base case: Low performance, low price, low market penetration rate -> f more LEDs in a single lamp Technology breakthrough case: High performance, controlled price, high market penetration rate -> fewer LEDs in a single lamp >
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General Illumination Market

LED Performance

2009

LED technologies

Number of lumens for various applications time-to-market for mass-production p

Light source # of lumen

1500
General Lighting

1000
RPTV LCD backlight

Car Headlamp

500

Car Rear lamp

100 < 10 < 2006

2009

Pocket Projector

Head-up display

2007

2008
LED technologies

2009

14

> 2010

Average LED optical output power vs. heat generation at different current levels
100% 90%
80%
70% 70% 60% 50% 40% 30% 20% 10% 0%
0% 20 mA 100 mA 350 mA 1000 mA
Heat Optical Power

The increasing of the input power produces more lumens, but lm/W ratio drops and so more heat is generated Thermal management is crucial for LED packaging

2009

15

LED technologies

Overall LED Performance luminous output power / wall-plug input power wall-plug
Epitaxy Front-End Back-End Packaging

Dies-on-wafer Substrate LED epiwafer

LED die

LED lamp Packaging losses: pack.

Internal Quantum Efficiency: int.

Electrical losses: elect.

Extraction Efficiency: extr.

Phosphor conversion Lenses Housing

total = int. x elect. x extr. x pack.

2009

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LED technologies

Expected Performance Gains White LEDs

Today status 60%
Packaging efficiency

Expectations 70%

Today status: Global efficiency = 23% Expectation for the future: Global efficiency ~ 52%

% 75%
Extraction efficiency

90%

84%
Electrical efficiency

92%

60%
Internal Quantum efficiency

90%

0%
2009

10%

20%

30%

40%

50%

60%

70%

80%

90%

100%

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LED technologies

LED Manufacturing

2009

LED technologies

Main Manufacturing Steps GaN-based GaN based LED

Substrate
SiC Sapphire pp Silicon Bulk GaN Composite substrates

Epitaxy Buffer layer

AlN Low T GaN AlN/GaN sandwich

Epitaxy Active layers

InGaN LED epi-wafer epi wafer

Back-End Back End level 0

LED dies Back-grinding Dicing, Flip-chip Laser Lift Off: LLO Lift-Off: LLO
Die shaping
LED dies-on-wafer

Front-End Front End Litho, etching, metallization

Lateral LED structure Vertical LED structure

Back-End level 1 l l
Sources: Yole Dveloppement
2009

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Binning, Pick-and-place
Phosphor coating
Packaged LED Packaging, Housing LED technologies

LED lamp

Regular LED (white) Front-End Front End steps

1. 2. 3. 4. 5. 6. 7. Substrate: Wafer inspection InGaN active layer + buffer Epitaxy (3 m) Litho 1: Mesa design Mesa etching: Dry etch Ti + Ni contact deposition (PVD) Litho 2: Ti + Ni etching Dry etching Ti + Ni

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Regular LED

Regular LED (white) Back-end Back end

1. 2. 3. 4. 5. Laser scribing + cleaving Chip bonding to the cathode Wire bonding x2 Phosphor coating Epoxy-based main lens molding

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Regular LED

Regular LED (white) Production costs for 100k wafers/year

Costbreakdown for100kx4"W/year /y
Substrate 6.1% Epitaxy 5.7% Other O h FE 1.4% Phosphor p 32.0%

Other BE 54.9% 54 9%

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Regular LED

Various techniques to improve white LED efficiency

efficiency
Techniques to improve LED efficiency

Material
New growth substrates

Front-End
Photonic Crystals

Back-End
Laser Lift-Off Temporary bonding Phosphors

Packaging

Vf

Surface texturing

Binning Bi i Flip-Chip with reflecting back contacts

Colour

x Fl u

Transparent top contacts

Dicing / Scribing
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2009

LED technologies

The perfect white LED would include

Grown on bulk or free-standing GaN substrate Removed substrate (LLO) if not grown on bulk-GaN R d b t t t b lk G N Vertical design with back side contact: smaller chip
Die i d Di size does not exceed 2x2 mm t d2 2 Transparent top contact (ITO or ZnO) Highly reflective back contact Textured top surface
Limited current density: (< 1 A/mm)
A/mm ) Thin active layer

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LED technologies

Time-to-market for LED substrates

UHB-LE ED GaN/SiC
GaN/bulk GaN

GaN/Sapphire
GaN/B-GaN/pAlN

H HB-LED

GaN/SiC GaN/Sapphire

GaN/B-Si/pSiC GaN/ZnO GaN/AlN

Regular LED

GaN/B-Si/pSiC GaN/SiC GaN/Sapphire GaN/Silicon GaN/Glass

GaN/Ge

2006
2009

2007

25

2008 2009 New substrates

2010

2011

2012

Substrate Cost Comparison

(taken from power electronics example)

GaN/ SiC
Pack. & test: $120

GaN / Sapphire
Pack. & test: $80

GaN/Si
Pack. & test: $80

Front-end $300

Epitaxy $300 4 Bulk SiC B lk $1,000

Front-end $300

Front-end $300

Epitaxy $300

Epitaxy $300

4 Sapphire: $150

4 Silicon: $ $25

Total: $1,720

Total: $830

Total: $705

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Cost Breakdown

Photonic crystal vs. Surface texturing

2 ways to increase the efficiency:

Photonic c ysta s oto c crystals

Surface texturing Su ace te tu g

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Photonic crystals & texturing

Laser Lift Off Technique

The LLO technique is used to form thin GaN layers from Sapphire substrates to improve both extraction and quantum efficiency. Using UV laser, a 50nm of the GaN structure is thermally y decomposed and delaminated from the substrate.
Main companies that use the p LLO technique:

Osram Lumileds Unipress Korean companies

2009

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Laser lift off Technique

Scribing & Dicing

LED one-step dicing is progressively replaced by a two-step method comprising GaN scribing and substrate cutting. The GaN scribing step must be carried out with high precision. To have good performance, the diodes must have very straight and smooth edges. This step can be done by Laser or Diamond techniques. The cutting of the substrate requires less precision and aims to separate the diodes. Diamond saws as well as scribe (by diamond or laser) and break techniques are normally used.
Scribing Dicing

Sapphire Scribing courtesy of Oxford Lasers

2009

0.4mm thick Sapphire

Diced by UVCVL of 255nm courtesy of Oxford Lasers

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Scribing and Dicing

Vf

Binning

Colour

x Flu

Binning refers to the classification of production yields. Each part is binned for 3 parameters: Flux: Luminous Flux (Brightness) Color: Dominant/Peak Wavelength or Correlated Color Temperature Vf: Forward Voltage f All binning is done at nominal current and at Tj =25 C 25

2009

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Binning

Vf

Binning

Colour

x Flu

Binning operations result from a trade-off with the epitaxy process ti it time. Binning operations add substantial cost in the LED manufacturing process. f t i Too severe binning criteria on the 3 parameters lead to rejection of more than 90% of the LED dies dies. LED design has to be done to have as few bins as possible being critical to the application application. Vf is the easiest parameter to eliminate, so that binning should prioritize on Color OR Flux Flux.
2009

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Binning

Conclusions
Market
LED backlightinga pplications are a price cutting game g g pp gg Automotive and LCD TV backlight growing General lighting: breakthroughs needed 150 lm/W at high current is threshold to penetrate this market segment A $1B market is expected after 2012 at LED device level

CREE, Nichia, Osram, Philips, and Toyoda Gosei

Patents related to phosphor down-conversion solidify p p p y positions

LED Performance, Manufacturing Technology & Materials

High power LEDs generate only 25% of light versus 75% of heat W k is being done atevery levelo f the manufacturing of LEDs to improve Work i i t l th f t i f LED efficiency and cost trade-offs occur at each level. New materials under development: 4 main trends

2009

Large diameter: -> 6 (GaN/silicon, GaN/Glass, composite substrates) Monolithic white LED phosphor-free (Cermet: ZnO, CRHEA, Nanovation) AlN native substrates for UV-LED manufacturing Single GaN substrate

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Conclusions