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FOD814 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

July 2009

FOD814 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
Features
AC input response (FOD814 only) Applicable to Pb-free IR reflow soldering Compact 4-pin package Current transfer ratio in selected groups:

Description
The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

FOD814: 20300% FOD814A: 50150%

FOD817: 50600% FOD817A: 80160% FOD817B: 130260% FOD817C: 200400% FOD817D: 300600%

C-UL, UL and VDE approved High input-output isolation voltage of 5000Vrms Minimum BVCEO of 70V guaranteed Higher operating temperatures (versus H11AXXX

counterparts)

Applications
FOD814 Series
AC line monitor Unknown polarity DC sensor Telephone line interface

FOD817 Series
Power supply regulators Digital logic inputs Microprocessor inputs

Functional Block Diagram


ANODE, CATHODE 1 4 COLLECTOR

ANODE 1

4 COLLECTOR

CATHODE, ANODE 2

3 EMITTER

CATHODE 2

3 EMITTER

FOD814

FOD817

2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.4

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FOD814 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

Absolute Maximum Ratings (TA = 25C Unless otherwise specied.) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
Value Symbol
TSTG TOPR TSOL TJ JC PTOT EMITTER IF VR PD DETECTOR VCEO VECO IC PC Collector-Emitter Voltage Emitter-Collector Voltage Continuous Collector Current Collector Power Dissipation Derate above 90C 70 6 50 150 2.9 V V mA mW mW/C Continuous Forward Current Reverse Voltage Power Dissipation Derate above 100C 70 1.7 50 50 6 mW mW/C mA

Units FOD817
C C C C C/W mW

Parameter
Storage Temperature Operating Temperature Lead Solder Temperature Junction Temperature Junction-to-Case Thermal Resistance Total Power Dissipation

FOD814

TOTAL DEVICE -55 to +150 -55 to +105 -55 to +110 260 for 10 sec 125 Max. 210 200

2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.4

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FOD814 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

Electrical Characteristics (TA = 25C Unless otherwise specied.)


Individual Component Characteristics Symbol
EMITTER VF IR Ct DETECTOR ICEO BVCEO BVECO Collector Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage FOD814 FOD817 FOD814 FOD817 FOD814 FOD817 VCE = 20V, IF = 0 VCE = 20V, IF = 0 IC = 0.1mA, IF = 0 IC = 0.1mA, IF = 0 IE = 10A, IF = 0 IE = 10A, IF = 0 70 70 6 6 V 100 100 V nA Forward Voltage Reverse Leakage Current Terminal Capacitance FOD814 FOD817 FOD817 FOD814 FOD817 IF = 20mA IF = 20mA VR = 4.0V V = 0, f = 1kHz V = 0, f = 1kHz 50 30 1.2 1.2 1.4 1.4 10 250 250 A pF V

Parameter

Device

Test Conditions

Min.

Typ.*

Max.

Unit

DC Transfer Characteristics
Symbol CTR DC Characteristic Current Transfer Ratio Device FOD814 FOD814A FOD817 FOD817A FOD817B FOD817C FOD817D VCE (sat) Collector-Emitter Saturation Voltage FOD814 FOD817 IF = 20mA, IC = 1mA IF = 20mA, IC = 1mA IF = 5mA, VCE = 5V(1) Test Conditions IF = 1mA, VCE = 5V(1) Min. 20 50 50 80 130 200 300 0.1 0.1 Typ.* Max. 300 150 600 160 260 400 600 0.2 0.2 V Unit %

AC Transfer Characteristics Symbol AC Characteristic


fC tr tf Cut-Off Frequency Response Time (Rise) Response Time (Fall)

Device
FOD814 FOD814, FOD817 FOD814, FOD817

Test Conditions
VCE = 5V, IC = 2mA, RL = 100, -3dB VCE = 2 V, IC = 2mA, RL = 100(2)

Min.
15

Typ.* Max. Unit


80 4 3 18 18 kHz s s

*Typical values at TA = 25C

2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.4

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FOD814 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

Electrical Characteristics (TA = 25C Unless otherwise specied.) (Continued)


Isolation Characteristics Symbol
VISO RISO CISO

Characteristic
Input-Output Isolation Voltage(3) Isolation Resistance Isolation Capacitance

Device

Test Conditions

Min.
5000 5x1010

Typ.*

Max.

Units
Vac(rms)

FOD814, f = 60Hz, t = 1 min, FOD817 II-O 2A FOD814, VI-O = 500VDC FOD817 FOD814, VI-O = 0, f = 1 MHz FOD817

1x1011 0.6 1.0

pf

*Typical values at TA = 25C Notes: 1. Current Transfer Ratio (CTR) = IC/IF x 100%. 2. For test circuit setup and waveforms, refer to page 7. 3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.

2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.4

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FOD814 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

Typical Electrical/Optical Characteristics (TA = 25C Unless otherwise specied.)


COLLECTOR POWER DISSIPATION PC (mW) COLLECTOR POWER DISSIPATION PC (mW) Fig. 1 Collector Power Dissipation vs. Ambient Temperature (FOD814) 200 Fig. 2 Collector Power Dissipation vs. Ambient Temperature (FOD817) 200

150

150

100

100

50

50

0 -55 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (C)

0 -55 -40 -20

20

40

60

80 100 120

AMBIENT TEMPERATURE TA (C)

6 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4 3 2 1 0

Fig. 3 Collector-Emitter Saturation Voltage vs. Forward Current

Fig. 4 Forward Current vs. Forward Voltage (FOD814) 100 FORWARD CURRENT IF (mA)
TA = 105 C 75oC 50 C
o o

Ic = 0.5mA 1mA 3mA 5mA 7mA

Ta = 25C

10

25oC 0oC

-30 C -55 C
o

2.5 5.0 7.5 10.0 12.5 FORWARD CURRENT IF (mA)

15.0

0.1 0.5

1.0

1.5

2.0

FORWARD VOLTAGE VF (V)

CURRENT TRANSFER RATIO CTR ( %)

Fig. 5 Forward Current vs. Forward Voltage (FOD817) 100 FORWARD CURRENT IF (mA)
TA = 110 C 75oC 50 C
o o

Fig. 6 Current Transfer Ratio vs. Forward Current

140 120 100 80 60 40 20

VCE = 5V Ta= 25C FOD817

10

25oC 0oC

-30 C -55 C
o

FOD814

0.1 0.5

1.0

1.5

2.0

0 0. 1 0.2

FORWARD VOLTAGE VF (V)

0.5 1 2 5 10 20 50 100 FORWARD CURRENT IF (mA)

2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.4

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FOD814 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

Typical Electrical/Optical Characteristics (Continued) (TA = 25C Unless otherwise specied.)


Fig. 7 Collector Current vs. Collector-Emitter Voltage (FOD814)
50
COLLECTOR CURRENT IC (mA)

Fig. 8 Collector Current vs. Collector-Emitter Voltage (FOD817)


30
COLLECTOR CURRENT IC (mA)
I IF = 30mA Ta = 25C 20mA Pc(MAX.)

Ta= 25C I F = 30mA 40 20 m A

25 20 15

30

Pc (M AX.)

20

10mA 5mA

10mA

10
5m A

10 1m A 0 0 10 20 30 40 50 60 70 80 90 100
COLLECTOR-EMITTER VOLTAGE VCE (V)

5 0 0 10 20 30 40 50 60 70 80 90
COLLECTOR-EMITTER VOLTAGE VCE (V)

Fig. 9 Relative Current Transfer Ratio vs. Ambient Temperature


RELATIVE CURRENT TRANSFER RATIO (%)
FOD814 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 FOD817
IF = 5mA VCE = 5V
IF = 1 mA VCE = 5V

Fig. 10 Collector-Emitter Saturation Voltage vs. Ambient Temperature


COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
0.12
I = 20mA
F

160

0.10 0.08 0.06 0.04 0.02

IC = 1mA

AMBIENT TEMPERATURE TA (C)

0.00 -60 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (C)

Fig. 11 LED Power Dissipation vs. Ambient Temperature (FOD814)


LED POWER DISSIPATION PLED (mW) LED POWER DISSIPATION PLED (mW)
100 100

Fig. 12 LED Power Dissipation vs. Ambient Temperature (FOD817)

80

80

60

60

40

40

20

20

0 -55 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (C)

0 -55 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (C)

2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.4

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FOD814 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

Typical Electrical/Optical Characteristics (Continued) (TA = 25C Unless otherwise specied.)


Fig. 13 Response Time vs. Load Resistance
100 50 VCE = 2V Ic= 2mA Ta = 25C

Fig. 14 Frequency Response


VCE = 2V Ic = 2mA Ta = 25C

RESPONSE TIME (s)

20 10 5 2 1 0.5 0.2 0.1

tf td ts

VOLTAGE GAIN AV (dB)

tr

RL=10k -10

1k

100

0.1 0.2 0.5 1 2 5 LOAD RESISTANCE RL (k)

10

-20 0.2

0.5 15 2 10 100 FREQUENCY f (kHz)

1000

COLLECTOR DARK CURRENT ICEO (nA)

Fig. 15 Collector Dark Current vs. Ambient Temperature


VCE = 20V

10000 1000 100 10 1 0.1 0.01 -60 -40 -20

20 40 60 80 100 120

AMBIENT TEMPERATURE TA (C)

Test Circuit for Response Time


Input Vcc Output RL Output

Test Circuit for Frequency Response


Vcc RD RL Output

Input

RD

10% 90%

td tr

ts tf

2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.4

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FOD814 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

Package Dimensions
Through Hole
0.312 (7.92) 0.288 (7.32)

Surface Mount

SEATING PLANE

0.157 (4.00) 0.118 (3.00)

SEATING PLANE

0.200 (5.10) 0.161 (4.10)

0.276 (7.00) 0.236 (6.00)


0.200 (5.10) 0.161 (4.10)

0.312 (7.92) 0.288 (7.32) 0.276 (7.00) 0.236 (6.00)

0.157 (4.00) 0.118 (3.00)

0.010 (0.26)

0.130 (3.30) 0.091 (2.30)

0.020 (0.51) TYP

0.051 (1.30) 0.043 (1.10)

0.024 (0.60) 0.004 (0.10)

0.049 (1.25) 0.030 (0.76) 0.412 (10.46) 0.388 (9.86)

0.150 (3.80) 0.110 (2.80) 0.024 (0.60) 0.016 (0.40)

0.010 (0.26) 0.393 (9.98) 0.300 (7.62)


0.110 (2.79) 0.090 (2.29) Lead Coplanarity 0.004 (0.10) MAX

0.110 (2.79) 0.090 (2.29)

Surface Mount (Footprint Dimensions) 0.4" Lead Spacing


1.3
0.312 (7.92) 0.288 (7.32) 0.157 (4.00) 0.118 (3.00) 0.276 (7.00) 0.236 (6.00)

1.5

SEATING PLANE

0.200 (5.10) 0.161 (4.10)

9
0.291 (7.40) 0.252 (6.40)

0.130 (3.30) 0.091 (2.30) 0.150 (3.80) 0.110 (2.80) 0.024 (0.60) 0.016 (0.40) 0.110 (2.79) 0.090 (2.29) 0.42 (10.66) 0.38 (9.66) 0.110 (2.80) 0.011 (1.80)

0.010 (0.26)

2.54

Note: All dimensions are in inches (millimeters)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specications do not expand the terms of Fairchilds worldwide terms and conditions, specically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductors online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/

2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.4

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FOD814 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

Ordering Information
Option
S SD 300 300W 3S 3SD

Part Number Example


FOD814S FOD814SD FOD814300 FOD814300W FOD8143S FOD8143SD

Description
Surface Mount Lead Bend Surface Mount; Tape and reel VDE Approved VDE Approved, 0.4" Lead Spacing VDE Approved, Surface Mount VDE Approved, Surface Mount, Tape & Reel

Marking Information

V X ZZ Y
3

814
1

Denitions
1 2 3 4 5 6 Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option See order entry table) One digit year code Two digit work week ranging from 01 to 53 Assembly package code

2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.4

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FOD814 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

Carrier Tape Specifications


1.550.05 P2 P0 1.750.1

F W B0 A0 P1 0.30.05

K0

Note: All dimensions are in millimeters.

Symbol
W P0 F P2 P1 A0 B0 K0 Tape wide

Description
Pitch of sprocket holes Distance of compartment Distance of compartment to compartment Compartment

Dimensions in mm (inches)
16 0.3 (.63) 4 0.1 (.15) 7.5 0.1 (.295) 2 0.1 (.079) 12 0.1 (.472) 10.45 0.1 (.411) 5.30 0.1 (.209) 4.25 0.1 (.167)

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FOD814 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

Lead Free Recommended IR Reflow Condition


Tp

Temperature (C)

Tsmax

Ramp-down

Tsmin

25C ts (Preheat) Time (sec) Soldering zon

Prole Feature
Preheat condition (Tsmin-Tsmax / ts) Melt soldering zone Peak temperature (Tp) Ramp-down rate

Pb-Sn solder assembly


100C ~ 150C 60 ~ 120 sec 183C 60 ~ 120 sec 240 +0/-5C 6C/sec max.

Lead Free assembly


150C ~ 200C 60 ~120 sec 217C 30 ~ 90 sec 260 +0/-5C 6C/sec max.

Recommended Wave Soldering condition


Prole Feature
Peak temperature (Tp)

For all solder assembly


Max 260C for 10 sec

2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.4

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FOD814 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

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First Production

Full Production Not In Production

Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I40

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