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19. 20. 21. 22. 23. 24. 25. 26. 27. 28. 29. 30. 31. 32. 33. C. T. Chen et al., Phys. Rev. B 48, 642 (1993). D. Spanke et al., Phys. Rev. B 58, 5201 (1998). S. S. P. Parkin et al., J. Appl. Phys. 85, 5828 (1999). F. Nolting et al., Nature 405, 767 (2000). A. Scholl et al., Science 287, 1014 (2000). K. Koike, K. Hayakawa, Jpn. J. Appl. Phys. 23, L187 (1984). J. Unguris, G. Hembree, R. J. Celotta, D. T. Pierce, J. Microsc. 139, RP1 (1985). H. P. Oepen, J. Kirschner, Scanning Microsc. 5, 1 (1991). R. Allenspach, J. Magn. Magn. Mat. 129, 160 (1994). M. R. Scheinfein, J. Unguris, M. H. Kelley, D. T. Pierce, R. J. Celotta, Rev. Sci. Instrum. 61, 2501 (1990). J. Barnes, L. Mei, B. M. Lairson, F. B. Dunning, Rev. Sci. Instrum. 70, 246 (1999). D. L. Abraham, H. Hopster, Phys.Rev. Lett. 58, 1352 (1987). H. Pinkvos, H. Poppa, E. Bauer, J. Hurst, Ultramicroscopy 47, 339 (1992). T. Duden, E. Bauer, Phys. Rev. B 59, 474 (1999). R. Wiesendanger, H.-J. Guntherodt, G. Guntherodtt, R. J. Gambino, R. Ruf, Phys. Rev. Lett. 65, 247 (1990). 34. M. Johnson, J. Clarke, J. Appl. Phys. 67, 6141 (1990). 35. S. F. Alvarado, J. Appl. Phys. 73, 5816 (1993). 36. W. H. Rippard, R. A. Buhrman, Appl. Phys. Lett. 75, 1001 (1999). 37. W. J. Kaiser, L. D. Bell, Phys. Rev. Lett. 60, 1406 (1988). 38. V. P. LaBella et al., Science 292, 1518 (2001). 39. J. Wittborn, K. V. Rao, J. Nogues, I. K. Schuller, Appl. Phys. Lett. 76, 2931 (2000). 40. S. Heinze et al., Science 288, 1805 (2000). 41. M. Bode, M. Getzlaff, R. Wiesendanger, Phys. Rev. Lett. 81, 4256 (1998). 42. S. Blugel, M. Weinert, P. H. Dederichs, Phys. Rev. Lett. 60, 1077 (1988). 43. M. Bode, O. Pietzsch, A. Kubetzka, S. Heinze, R. Wiesendanger, Phys. Rev. Lett. 86, 2142 (2001). 44. W. K. Hiebert, A. Stankiewicz, M. R. Freeman, Phys. Rev. Lett. 79, 1134 (1997). 45. D. D. Awschalom, J.-M. Halbout, S. von Molnar, T. Siegrist, F. Holtzberg, Phys. Rev. Lett. 55, 1128 (1985). 46. Y. Acremann et al., Science 290, 492 (2000). 47. B. C. Choi, M. Belov, W. K. Hiebert, G. E. Ballentine, M. R. Freeman, Phys. Rev. Lett. 86, 728 (2001). 48. T. M. Crawford, T. J. Silva, C. W. Teplin, C. T. Rogers, Appl. Phys. Lett. 74, 3386 (1999). 49. J. Reif, J. C. Zink, C. M. Schneider, J. Kirschner, Phys. Rev. Lett. 67, 2878 (1991). 50. F. Sirotti et al., J. Appl. Phys. 83, 1563 (1998). 51. M. Bonm et al., Phys. Rev. Lett. 86, 3646 (2001). 52. J. M. Kikkawa, D. D. Awschalom, Nature 397, 139 (1999). 53. W. Weber, S. Riesen, H. C. Seigmann, Science 291, 1015 (2001). 54. E. O. Wilson, Consilience: the unity of knowledge (Knopf, New York, 1998). 55. K. Nakamura et al., Phys. Rev. B 56, 3218 (1997). 56. D. Rugar, C. S. Yannoni, J. A. Sidles, Science 264, 1560 (1994). 57. We thank many colleagues for discussions and we thank G. Nunes and J. Beamish for comments on the manuscript. Supported by Natural Sciences and Engineering Research Council, Canadian Institute for Advanced Research, Informatics Circle of Research Excellence, and the Canada Research Chairs.
REVIEW
new generation of devices combining standard microelectronics with spin-dependent effects that arise from the interaction between spin of the carrier and the magnetic properties of the material. Traditional approaches to using spin are based on the alignment of a spin (either up or down) relative to a reference (an applied magnetic field or magnetization orientation of the ferromagnetic film). Device operations then proceed with some quantity (electrical current) that depends in a predictable way on the degree of alignment. Adding the spin degree of freedom to conventional semiconductor chargebased electronics or using the spin degree of freedom alone will add substantially more capability and performance to electronic products. The advantages of these new devices would be nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities
compared with conventional semiconductor devices. Major challenges in this field of spintronics that are addressed by experiment and theory include the optimization of electron spin lifetimes, the detection of spin coherence in nanoscale structures, transport of spin-polarized carriers across relevant length scales and heterointerfaces, and the manipulation of both electron and nuclear spins on sufficiently fast time scales. In response, recent experiments suggest that the storage time of quantum information encoded in electron spins may be extended through their strong interplay with nuclear spins in the solid state. Moreover, optical methods for spin injection, detection, and manipulation have been developed that exploit the ability to precisely engineer the coupling between electron spin and optical photons. It is envisioned that the merging of electronics, photonics, and magnetics will ultimately lead to new spin-based multifunctional devices such as spin-FET (field effect transistor), spin-LED (light-emitting diode), spin RTD (resonant tunneling device), optical switches operating at terahertz frequency, modulators, encoders, decoders, and quantum bits for quantum computation and communication. The success of these ventures depends on a deeper understanding of fundamental spin interactions in solid state materials as well as the roles of dimensionality, defects, and semiconductor band structure in modifying these dynamics. If we can understand and control the spin
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1. REPORT DATE
NOV 2001
4. TITLE AND SUBTITLE
00-00-2001 to 00-00-2001
5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER
6. AUTHOR(S)
5d. PROJECT NUMBER 5e. TASK NUMBER 5f. WORK UNIT NUMBER
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Fig. 1. Spin-dependent transport structures. (A) Spin valve. (B) Magnetic tunnel junction.
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Fig. 2. (A to D) Device applications. A description of (C) is given in (13). [(B) courtesy of NVE; (D) courtesy of Motorola]
ferromagnetic semiconductors (FS) is their potential as spin-polarized carrier sources and easy integration into semiconductor devices. The ideal FS would have Curie temperatures above room temperature and would be able to incorporate not only p-type, but also n-type dopants. The Eu chalcogenides, the most thoroughly studied early magnetic semiconductors, in which the magnetic species (Eu2 ) resides on every lattice site, failed in the practical sense, because their ferromagnetic transition temperatures, TC, were much lower than room temperature (20) with little hope of great improvement. The discovery of ferromagnetic order temperatures as high as 110 K in III-V based diluted magnetic semiconductors (DMS) (21) (alloys in which some atoms are randomly replaced by magnetic atoms, such as Mn 2 ) has generated much attention. There are theoretical predictions for TCs above room temperature in several classes of these materials (22). And the discovery of electronically controlled magnetism (23) was recently reported. To achieve large spin polarization in semiconductors, the Zeeman splitting of the conduction (valence) band must be greater than the Fermi energy, EF, of the electrons (holes). In concentrated materials, this occurs easily because the net magnetization upon ordering is
B
2eV
0.3eV EF 0.15eV EF
Fig. 3. (A) Schematic densities of states N(E) for a concentrated magnetic semiconductor below TC (24). (B) Schematic densities of states N(E) for the half-metallic ferromagnet CrO2 (118, 119). Note that the energy scale is almost 10 times larger in (B).
N(E) proportional to the concentration of magnetic species. Figure 3A depicts this situation for doped EuS, where the change (Zeeman) splitting is 0.3 eV (24) and an estimate of EF based on 1020 cm 3 free carriers is 0.15 eV. Externally applied magnetic fields may be necessary to produce large polarization in DMS where the Mn content is generally low ( 5%) and may be limited by phase separation while the carrier concentrations are high ( 1020 cm 3). Another approach is to search for new materials that exhibit large carrier spin polarization. Candidates include ferromagnetic ox-
N(E) ides and related compounds, many of which are predicted to be half-metallic (25). The Fermi level intersects only one of the two spin bands, whereas for the other the Fermi level resides in a band gap (see Fig. 3B). Thus, there are efforts to produce magnetic Heussler alloys (26) such as NiMnSb (TC 728 K), which has been used as an electrode in tunneling junctions (27). Other possibilities are CrO2 (28), the only ferromagnetic metallic binary oxide, and various members of the mixed valence perovskites (29), e.g., La.70Sr.30MnO3, and Fe3O4, which, according to photoemission data (30), have com-
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Fig. 4. Room temperature spin transport across a GaAs/ZnSe heterojunction. Kerr rotation with a probe energy of 2.8 eV detects coherent spins created in GaAs that 0 cross the interface into ZnSe. Results are shown for electron spins precessing in magnetic eld B and 0.250 T (black curve). [Adapted from (120)]
K (ZnSe)
T = 300K
t (ns)
Fig. 5. Field effect control of hole-induced ferromagnetism in magnetic semiconductor (In,Mn)As eld-effect transistors. Shown is magnetic eld dependence of the sheet Hall resistance RHall, which is proportional to the magnetization of the magnetic semiconductor layer, as a function of the applied gate voltage VG. RHall is used to measure the small magnetization of the channel. VG controls the hole concentration in the magnetic semiconductor channel. Application of VG 0, 125, and 125 V results in qualitatively different eld dependence of RHall measured at 22.5 K. When holes are partially depleted from the channel (VG 125 V), a paramagnetic response is observed (blue dash-dotted line), whereas a clear hysteresis at low elds ( 0.7 mT ) appears as holes are accumulated in the channel (VG 125 V, red dashed line). Two RHall curves measured at VG 0 V before and after application of 125 V (black solid line and green dotted line, respectively) are virtually identical, showing that the control of ferromagnetism can be done isothermally and reversibly. (Inset) The same curves shown at higher magnetic elds. [Adapted from (23)]
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Outlook
To continue the rapid pace of discoveries, considerable advances in our basic understanding of spin interactions in the solid state along with developments in materials science, lithography, minaturization of optoelectronic elements, and device fabrication are necessary. The progress toward understanding and implementing the spin degree of freedom in metallic multilayers and, more recently, in semiconductors is gaining momentum as more researchers begin to address the relevant challenges from markedly different viewpoints. Spintronic read head sensors are already impacting a multibillion dollar industry and magnetic random access memory using metallic elements will soon impact another multibillion dollar industry. With contributions from a diversity of countries and fields including biology, chemistry, physics, electrical engineering, computer science, and mathematical information theory, the rapidly emerging field of spintronics promises to provide fundamentally new advances in both pure and applied science as well as have a substantial impact on future technology.
1. M. Baibich et al., Phys. Rev. Lett. 61, 2472 (1988). 2. J. Barnas, A. Fuss, R. Camley. P. Grunberg, W. Zinn, Phys. Rev. B 42, 8110 (1990). 3. G. Prinz, Science 282, 1660 (1998). 4. B. Dieny et al., J. Appl. Phys. 69, 4774 (1991). 5. S. Parkin, D. Mauri, Phys. Rev. B 44 7131 (1991). 6. W. F. Egelhoff Jr. et al., J. Vac. Sci. Technol. B 17, 1702 (1999). 7. J. S. Moodera, L. R. Kinder, T. M. Wong, R. Meservey, Phys. Rev. Lett. 74, 3273 (1995).
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REVIEW
complex phenomena. Frustration is at the origin of the intricate structure of molecular crystals, various phase transitions in liquid crystals, and the magnetic domain structures in ferromagnetic films. It has also been argued to be involved in the formation of the stripelike structures observed in cuprate high-temperature superconductors. The concept of frustration is a broad one that extends beyond the field of condensed matter physics. For example, the ability of naturally occurring systems to resolve frustrated interactions has been argued to have bearings on life itself, exemplified by the folding of a protein to form a single and well-prescribed structure with biological functionality.
Historically, the first frustrated system identified was crystalline ice, which has frozen-in disorder remaining down to extremely low temperature, a property known as residual, or zeropoint entropy. In 1933, Giauque and co-workers accurately measured this entropy (2, 3), enabling Pauling to offer his now famous explanation in terms of the mismatch between the crystal symmetry and the local bonding requirements of the water molecule (4). He predicted a special type of proton disorder that obeys the so-called ice rules. These rules, previously proposed by Bernal and Fowler (5), require that two protons are near to and two are further away from each oxide ion, such that the crystal structure consists of hydrogen-bonded water molecules, H2O (see Fig. 1). Pauling showed that the ice rules do not lead to order in the proton arrangement but rather, the ice ground state is macroscopically degenerate. That is to say, the number of degenerate, or energetically equivalent proton arrangements diverges exponentially with the size of the sample. Pauling estimated the degeneracy to be (3/2)N/2, where N is the number of water molecules, typically 1024 in a macroscopic sample. This leads to a disordered ground state with a measurable zeropoint entropy S0 related to the degeneracy: S0 (R/2)ln(3/2), where R is the molar gas constant. Paulings estimate of S0 is very close to the most accurate modern estimate (6) and consistent with experiment (2). The disordered icerules proton arrangement in water ice was eventually
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